IRLML5203TRPBF-1 [INFINEON]
Small Signal Field-Effect Transistor;
| 型号： | IRLML5203TRPBF-1 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Field-Effect Transistor |
| 文件： | 总9页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRLML5203PbF-1
HEXFET® Power MOSFET
VDS
-30
98
V
RDS(on) max
(@VGS = -10V)
RDS(on) max
(@VGS = -4.5V)
Qg (typical)
ID
G
S
1
2
m
Ω
3
D
165
9.5
nC
A
Micro3TM
-3.0
(@TA = 25°C)
Features
Benefits
Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
MSL1, Industrial qualification
Standard Pack
Base Part Number
Package Type
Micro3 (SOT-23)
Orderable Part Number
Form
Quantity
IRLML5203TRPbF-1
Tape and Reel
3000
IRLML5203TRPbF-1
™
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain- Source Voltage
-30
-3.0
-2.4
-24
V
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
A
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
1.25
0.80
10
W
Power Dissipation
Linear Derating Factor
mW/°C
V
VGS
Gate-to-Source Voltage
± 20
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
100
Units
°C/W
RθJA
1
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 25, 2013
IRLML5203PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-30 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.019 ––– V/°C Reference to 25°C, ID = -1mA
––– –––
98
VGS = -10V, ID = -3.0A
VGS = -4.5V, ID = -2.6A
VDS = VGS, ID = -250μA
VDS = -10V, ID = -3.0A
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
––– ––– 165
-1.0 ––– -2.5
3.1 ––– –––
––– ––– -1.0
––– ––– -5.0
––– ––– -100
––– ––– 100
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
V
DS = -24V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = -24V, VGS = 0V, TJ = 70°C
VGS = -20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = 20V
Qg
––– 9.5
14
ID = -3.0A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 2.3 3.5
––– 1.6 2.4
––– 12 –––
––– 18 –––
––– 88 –––
––– 52 –––
––– 510 –––
––– 71 –––
––– 43 –––
nC VDS = -24V
VGS = -10V
VDD = -15V
ID = -1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
VGS = -10V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = -25V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
-1.3
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
-24
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
TJ = 25°C, IS = -1.3A, VGS = 0V
TJ = 25°C, IF = -1.3A
––– 17
––– 12
26
18
ns
nC
Qrr
di/dt = -100A/μs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 25, 2013
IRLML5203PbF-1
100
10
100
10
1
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
TOP
TOP
BOTTOM -2.7V
BOTTOM-2.7V
1
-2.70V
-2.70V
0.1
20μs PULSE WIDTH
20μs PULSE WIDTH
°
T = 150 C
J
°
T = 25 C
J
0.1
0.1
0.01
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
3.0A
=
I
D
1.5
1.0
0.5
0.0
10
°
T = 150 C
J
1
°
T = 25 C
J
V
= -15V
DS
20μs PULSE WIDTH
V
=-10V
GS
0.1
2.0
3.0
4.0
5.0 6.0
7.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 25, 2013
IRLML5203PbF-1
20
16
12
8
800
600
400
200
0
I
D
=
-3.0A
V
= 0V,
f = 1MHz
gd , ds
GS
V
V
=-24V
=-15V
C
= C + C
gs
C
SHORTED
DS
DS
iss
C
= C
gd
rss
C
= C + C
ds
oss
gd
C
iss
4
C
oss
C
rss
0
0
4
8
12
16
1
10
100
Q , Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
10
°
T = 150 C
J
100us
1ms
1
°
T = 25 C
J
10ms
°
T = 25 C
A
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.6
0.1
0.1
0.4
0.1
1
10
100
0.6
0.8
1.0
1.2
1.4
1.8
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 25, 2013
IRLML5203PbF-1
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
1000
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
A
DM
thJA
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 25, 2013
IRLML5203PbF-1
0.14
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.40
0.30
0.20
0.10
0.00
V
= -4.5V
GS
I
= -3.0A
D
V
= -10V
GS
4.0
6.0
-V
8.0
10.0
12.0
14.0
16.0
Gate -to -Source Voltage (V)
0
4
8
12
16
GS,
-I , Drain Current (A)
D
Fig 12. Typical On-Resistance Vs. Drain
Fig 11. Typical On-Resistance Vs. Gate
Current
Voltage
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2μF
12V
.3μF
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 25, 2013
IRLML5203PbF-1
30
20
10
0
2.5
2.0
1.5
I
= -250μA
D
0.001
0.010
0.100
1.000
10.000
100.000
-75 -50 -25
0
25
50
75 100 125 150
Time (sec)
T , Temperature ( °C )
J
Fig 15. Typical Power Vs. Time
Fig 14. Threshold Voltage Vs. Temperature
7
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 25, 2013
IRLML5203PbF-1
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
S
Y
DIMENSIONS
M
B
6
MIL L IME T E RS
INCHES
O
L
D
5
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
MAX
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
MIN
MAX
.044
A
A1
A2
b
.036
.0004
.035
.0039
.040
3
6
.0119
.0032
.111
.0196
.0078
.119
E
c
E1
B
ccc
C B A
D
E
1
2
.083
.048
.103
.055
E1
e
0.95 BSC
1.90 BSC
0.40 0.60
0.25 BS C
0° 8°
.0375 BSC
.075 BSC
.0158 .0236
.0118 BSC
0° 8°
5
e1
L
e
e1
L1
0
aaa
0.10
0.20
0.15
.004
.008
.006
bbb
ccc
4
H
A2
A
L1
3X b
bbb
A1
aaa
C
C
A B
3 S URF
0
7
3X L
RE COMME NDE D FOOT PRINT
NOT ES
1. DIMENSIONING AND TOLERANCINGPER ASME Y14.5M-1994.
2. DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES.
3. CONTROLLING DIMENSION: MILLIMETER.
0.972
[.038]
3X
2.742
[.1079]
4
5
6
7
DATUM PLANE H IS LOCATED AT THE MOLD PARTINGLINE.
DATUM AAND B TO BE DETERMINED AT DATUM PLANE H.
DIME NS IONS D AND E 1 AR E ME AS UR ED AT DAT UM PL ANE H .
DIMENSION L IS THE LEAD LENGTH FOR SOLDERINGTOA SUBSTRATE.
8. OUTLINE CONFORMS TOJEDECOUTLINE TO-236AB.
0.802
3X
[.031]
0.95
[.0375]
1.90
[.075]
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 25, 2013
IRLML5203PbF-1
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
3.45 ( .136 )
8.3 ( .326 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
™
Micro3 (SOT-23)
Moisture Sensitivity Level
RoHS compliant
(per JEDEC J-STD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 25, 2013
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