IRLML6246TRPBF [INFINEON]
HEXFETPower MOSFET;
| 型号： | IRLML6246TRPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFETPower MOSFET PC 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97529A
IRLML6246TRPbF
HEXFET® Power MOSFET
VDS
20
V
V
G
1
VGS Max
± 12
RDS(on) max
(@VGS = 4.5V)
3
D
46
66
m
TM
2
RDS(on) max
(@VGS = 2.5V)
S
Micro3 (SOT-23)
m
IRLML6246TRPbF
Application(s)
• Load/ System Switch
Features and Benefits
Features
Benefits
Industry-standard SOT-23 Package
Multi-vendor compatibility
Environmentally friendly
RoHS compliant containing no lead, no bromide and no halogen
results in
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
20
4.1
3.3
16
Drain-Source Voltage
VDS
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
1.3
0.8
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
PD @TA = 25°C
PD @TA = 70°C
W
0.01
± 12
W/°C
V
Gate-to-Source Voltage
VGS
-55 to + 150
Junction and Storage Temperature Range
°C
TJ, TSTG
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
Junction-to-Ambient
RθJA
RθJA
–––
–––
100
99
°C/W
Junction-to-Ambient (t<10s)
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
www.irf.com
1
10/12/12
IRLML6246TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
0.03
30
–––
–––
46
V
VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
–––
–––
0.5
V/°C Reference to 25°C, ID = 1mA
V
GS = 4.5V, ID = 4.1A
RDS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
mΩ
45
66
VGS = 2.5V, ID = 3.3A
VGS(th)
IDSS
0.8
–––
–––
–––
–––
–––
4.0
–––
3.5
0.26
1.7
3.6
4.9
11
1.1
1.0
10
V
VDS = VGS, ID = 5μA
–––
–––
–––
–––
–––
–––
10
V
V
DS =16V, VGS = 0V
Drain-to-Source Leakage Current
μA
DS = 16V, VGS = 0V, TJ = 55°C
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 12V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
nA
V
GS = -12V
RG
Ω
gfs
Qg
S
VDS = 10V, ID = 4.1A
D = 4.1A
VDS =10V
GS = 4.5V
VDD =10V
D = 1.0A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
nC
ns
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
V
Rise Time
I
Ω
td(off)
tf
Turn-Off Delay Time
R
G = 6.8
VGS = 4.5V
VGS = 0V
Fall Time
6.0
290
64
Ciss
Coss
Crss
Input Capacitance
pF
Output Capacitance
VDS = 16V
Reverse Transfer Capacitance
41
ƒ = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
–––
–––
1.3
showing the
G
A
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
–––
–––
16
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
8.6
2.8
1.2
13
V
TJ = 25°C, IS = 4.1A, VGS = 0V
TJ = 25°C, VR = 15V, IF=1.3A
ns
Qrr
4.2
nC di/dt = 100A/μs
2
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IRLML6246TRPbF
100
10
1
100
10
60μs PULSE WIDTH
Tj = 150°C
≤
60μs PULSE WIDTH
Tj = 25°C
≤
1
VGS
10V
VGS
10V
TOP
TOP
4.5V
3.0V
2.5V
2.3V
2.0V
1.8V
1.5V
4.5V
3.0V
2.5V
2.3V
2.0V
1.8V
1.5V
1.5V
1.5V
0.1
0.01
BOTTOM
BOTTOM
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
I
= 4.1A
D
V
= 4.5V
GS
10
1
T = 150°C
J
T = 25°C
J
V
= 15V
DS
60μs PULSE WIDTH
≤
0.1
1.0
1.5
2.0
2.5
3.0
3.5
-60 -40 -20
T
0
20 40 60 80 100120 140 160
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLML6246TRPbF
10000
14.0
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 4.1A
D
C
C
C
+ C , C
SHORTED
V
V
V
= 16V
= 10V
= 4.0V
iss
gs
gd
ds
DS
DS
DS
= C
rss
oss
gd
= C + C
ds
gd
1000
100
10
C
iss
6.0
C
oss
C
4.0
rss
2.0
0.0
1
10
, Drain-to-Source Voltage (V)
100
0.0
2.0
4.0
6.0
8.0
V
Q , Total Gate Charge (nC)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
10
1
100μsec
1msec
T = 150°C
J
T = 25°C
J
10msec
0.1
0.01
0
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.0
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRLML6246TRPbF
5.0
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
, Ambient Temperature (°C)
A
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLML6246TRPbF
80
120
100
80
I
= 4.1A
D
60
40
20
Vgs = 4.5V
T
= 125°C
J
60
Vgs = 10V
40
T
= 25°C
J
20
0
1
2
3
4
5
6
7
8
9
10 11 12
0
5
10
15
20
25
30
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Typical On-Resistance Vs. Drain
Fig 12. Typical On-Resistance Vs. Gate
Current
Voltage
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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IRLML6246TRPbF
1.5
1.0
0.5
0.0
100
80
60
40
20
0
I
= 10uA
D
I
= 250uA
D
1E-005 0.0001 0.001
0.01
0.1
1
10
-75 -50 -25
0
25 50 75 100 125 150
Time (sec)
T , Temperature ( °C )
J
Fig 16. Typical Power Vs. Time
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
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7
IRLML6246TRPbF
Micro3™(SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
5
6
MILLIMETERS
INCHES
SYMBOL
D
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
MAX
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MIN
MAX
A
A1
A2
b
c
D
E
E1
e
A
0.0004
A2
C
3
E
6
E1
0.15 [0.006]
M
C
B A
1
2
0.10 [0.004]
C
A1
3X
b
e
0.20 [0.008] M
C
B A
B
5
NOTES:
e1
e1
L
L1
L2
H
4
L1
REF
BSC
8
Recommended Footprint
c
0
0.972
0.950
2.742
L2
0.802
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
3X L
7
1.900
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
Micro3™(SOT-23) Part Marking Information
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
DAT E CODE
PART NUMBER
WORK
WE EK
LEAD FREE
YEAR
Y
W
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
Cu WIRE
HALOGEN FREE
LOT CODE
X = PART NUMBER CODE REFERENCE:
A = IRLML2402
B = IRLML2803
C= IRLML6302
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
S = IRLML6244
T = IRLML6246
U= IRLML6344
24
25
26
X
Y
Z
V= IRLML6346
W = (27-52) IF PRECEDED BY ALETTER
WORK
YEAR
Y
WE EK
W
I
= IRLML0030
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
27
28
29
30
A
B
C
D
J = IRLML2030
K = IRLML0100
L = IRLML0060
M= IRLML0040
N = IRLML2060
P = IRLML9301
R = IRLML9303
F
G
H
J
K
50
51
52
X
Y
Z
Note: A line above the work week
(as shown here) indicates Lead- Free.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRLML6246TRPbF
Micro3™(SOT-23) Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
8.3 ( .326 )
3.45 ( .136 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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9
IRLML6246TRPbF
Orderable part number
Package Type
Micro3 (SOT-23)
Standard Pack
Note
Form
Tape and Reel
Quantity
IRLML6246TRPbF
3000
™
Qualification information†
Consumer††
(per JEDEC JESD47F ††† guidelines )
Qualification level
MSL1
Moisture Sensitivity Level
RoHS compliant
Micro3™(SOT-23)
(per IPC/JEDEC J-STD-020D†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board
Refer to application note #AN-994.
Revision History
Date
Comments
Added IDSS @ 16V, TJ = 55C-pg2
10/12/2012
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N. Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/2012
10
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相关型号：
IRLML6344
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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