IRLML5203TR [INFINEON]
Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3;
| 型号： | IRLML5203TR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管 |
| 文件： | 总9页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93967
PROVISIONAL
IRLML5203
HEXFET® Power MOSFET
VDSS
-30V
RDS(on) max (mΩ)
98@VGS = -10V
ID
-3.0A
l Ultra Low On-Resistance
P-Channel MOSFET
l
l Surface Mount
165@VGS = -4.5V
-2.6A
l Available in Tape & Reel
l Low Gate Charge
Description
TheseP-channelMOSFETsfromInternationalRectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefitprovidesthedesignerwithanextremelyefficient
device for use in battery and load management
applications.
G
S
1
2
3
D
Micro3TM
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to
produceaHEXFETPowerMOSFETwiththeindustry's
smallestfootprint.Thispackage,dubbedtheMicro3TM
,
is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of
the Micro3 allows it to fit easily into extremely thin
applicationenvironmentssuchasportableelectronics
and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-30
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-3.0
-2.4
-24
A
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
1.25
0.80
10
W
Power Dissipation
Linear Derating Factor
mW/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
100
Units
°C/W
RθJA
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1
8/28/00
IRLML5203
PROVISIONAL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-30 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.019 ––– V/°C Reference to 25°C, ID = -1mA
––– –––
98
VGS = -10V, ID = -3.0A
VGS = -4.5V, ID = -2.6A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -3.0A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 70°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
––– ––– 165
-1.0 ––– -2.5
3.1 ––– –––
––– ––– -1.0
––– ––– -5.0
––– ––– -100
––– ––– 100
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
––– 9.5
14
ID = -3.0A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 2.3 3.5
––– 1.6 2.4
––– 12 –––
––– 18 –––
––– 88 –––
––– 52 –––
––– 510 –––
––– 71 –––
––– 43 –––
nC VDS = -24V
VGS = -10V
VDD = -15V
ID = -1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
VGS = -10V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = -25V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
–––
–––
––– -1.3
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
-24
–––
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
TJ = 25°C, IS = -1.3A, VGS = 0V
TJ = 25°C, IF = -1.3A
––– 17
––– 12
26
18
ns
nC
Qrr
di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRLML5203
PROVISIONAL
100
10
100
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
TOP
TOP
BOTTOM -2.7V
BOTTOM-2.7V
10
1
1
-2.70V
-2.70V
0.1
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 150 C
J
T = 25 C
J
0.1
0.1
0.01
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
3.0A
=
I
D
1.5
1.0
0.5
0.0
10
°
T = 150 C
J
1
°
T = 25 C
J
V
= -15V
DS
20µs PULSE WIDTH
V
= -10V
GS
0.1
2.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
3.0
4.0
5.0 6.0
7.0
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLML5203
PROVISIONAL
20
16
12
8
800
I
D
= -3.0A
V
= 0V,
f = 1MHz
C
GS
V
V
=-24V
=-15V
C
= C + C
SHORTED
ds
DS
DS
iss
gs
gd ,
gd
C
= C
gd
rss
C
= C + C
ds
oss
600
400
200
0
C
iss
4
C
oss
rss
C
0
0
4
8
12
16
1
10
100
Q
, Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 150 C
J
100us
1ms
°
T = 25 C
J
10ms
°
= 25 C
T
A
°
T
= 150 C
J
Single Pulse
V
= 0 V
GS
1.6
0.1
0.1
0.4
0.1
1
10
100
0.6
0.8
1.0
1.2
1.4
1.8
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRLML5203
PROVISIONAL
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
1000
100
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLML5203
PROVISIONAL
0.14
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.40
0.30
0.20
0.10
V
= -4.5V
GS
I
= -3.0A
V
= -10V
D
GS
0.00
16.0
4.0
6.0
-V
8.0
10.0
12.0
14.0
0
4
8
12
16
Gate -to -Source Voltage (V)
GS,
-I , Drain Current (A)
D
Fig 12. Typical On-Resistance Vs. Drain
Fig 11. Typical On-Resistance Vs. Gate
Current
Voltage
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRLML5203
PROVISIONAL
30
2.5
2.0
1.5
20
10
0
I
= -250µA
D
0.001
0.010
0.100
1.000
10.000
100.000
-75 -50 -25
0
25
50
75 100 125 150
Time (sec)
T
, Temperature ( °C )
J
Fig 15. Typical Power Vs. Time
Fig 14. Threshold Voltage Vs. Temperature
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7
IRLML5203
PROVISIONAL
Micro3TM Package Outline
Dimensions are shown in millimeters (inches)
D
INCH ES
M IN M AX
M ILLIM ETERS
L EAD ASSIG N M ENTS
1 - G ATE
D IM
3
- B -
MIN
0.82
M AX
1.11
A
.032
.001
.015
.004
.105
.044
.004
.021
.006
.120
2 - SO UR CE
3 - D RAIN
A1
B
0.02
0.38
0.10
2.67
0.10
0.54
0.15
3.05
3
3
H
E
C
D
e
- A -
0.20 ( .008 )
M
A
M
1
2
.0750 BASIC
.0375 BASIC
1.90 BASIC
0.95 BASIC
e1
E
.047
.083
.005
0°
.055
.098
.010
8°
1.20
2.10
0.13
0°
1.40
e
H
L
2.50
0.25
8°
e1
θ
θ
A
M INIM UM RECO M M EN DED FO O TPR INT
- C
-
0.80 ( .031 )
3X
0.008 (.003)
A1
S
C
L
B
3X
0.90
( .035 )
3X
3X
3X
0.10 (.004)
M
C
A S
B
2.00
( .079 )
N OTES:
1. DIM EN SIO NING & TOLERAN CING PER ANSI Y14.5M -1982.
2. CO NTR OLLING DIM ENSIO N : INC H.
0.95 ( .037 )
2X
DIM EN SIO NS DO NO T IN CLU DE M OLD FLASH.
3
Micro3TM Part Marking Information
EXAMPLE: THIS IS AN IRLML6302
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
YEAR
Y
WE EK
W
PART NUMBER
DATE
CODE
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
1C YW
PART NUMBER CODE REFERENCE:
24
25
26
X
Y
Z
1A = IRLML2402
1B = IRLML2803
1C = IRLML6302
1D = IRLML5103
1E = IRLML6402
1F = IRLML6401
1G = IRLML2502
1H = IRLML5203
WW = (27-52) IF PRECEDED BY ALETTER
WORK
YEAR
Y
WE EK
W
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
27
28
29
30
A
B
C
D
DATE CODE EXAMPLES :
YWW = 9503 = 5C
YWW = 9532 = EF
K
50
51
52
X
Y
Z
8
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IRLML5203
PROVISIONAL
Micro3TM Tape & Reel Information
Dimensions are shown in millimeters (inches)
8mm
FEED DIRECTION
4mm
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Ø 7"
8mm
NOTES:
1. OUT LINE CONFORMS T O EIA-481 & EIA-541.
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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 8/00
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9
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