IRLML5203TRPBF [TYSEMI]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRLML5203TRPBF |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总2页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
IRLML5203PbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
P-Channel MOSFET
VDSS
-30V
RDS(on) max (mW)
98@VGS = -10V
ID
-3.0A
l
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
165@VGS = -4.5V
-2.6A
l Halogen-Free
Description
TheseP-channelMOSFETsfromInternationalRectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefitprovidesthedesignerwithanextremelyefficient
device for use in battery and load management
applications.
Micro3TM
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to
produceaHEXFETPowerMOSFETwiththeindustry's
smallestfootprint.Thispackage,dubbedtheMicro3TM
,
is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of
the Micro3 allows it to fit easily into extremely thin
applicationenvironmentssuchasportableelectronics
and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-30
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-3.0
-2.4
A
-24
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
1.25
W
Power Dissipation
0.80
Linear Derating Factor
10
mW/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
100
Units
°C/W
RθJA
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Product specification
IRLML5203PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-30 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.019 ––– V/°C Reference to 25°C, ID = -1mA
––– –––
98
VGS = -10V, ID = -3.0A
VGS = -4.5V, ID = -2.6A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -3.0A
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
––– ––– 165
-1.0 ––– -2.5
3.1 ––– –––
––– ––– -1.0
––– ––– -5.0
––– ––– -100
––– ––– 100
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
VDS = -24V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = -24V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
IGSS
VGS = 20V
ID = -3.0A
Qg
––– 9.5
14
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 2.3 3.5
––– 1.6 2.4
––– 12 –––
––– 18 –––
––– 88 –––
––– 52 –––
––– 510 –––
––– 71 –––
––– 43 –––
nC VDS = -24V
VGS = -10V
VDD = -15V
ID = -1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
VGS = -10V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = -25V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
-1.3
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
-24
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
TJ = 25°C, IS = -1.3A, VGS = 0V
TJ = 25°C, IF = -1.3A
––– 17
––– 12
26
18
ns
nC
Qrr
di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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