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IRLML6302TRPBF

更新时间：2024-09-18 12:16:56
品牌：INFINEON
描述：HEXFET® Power MOSFET

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IRLML6302TRPBF 概述

HEXFET® Power MOSFET HEXFET®功率MOSFET MOS管 小信号场效应晶体管

IRLML6302TRPBF 规格参数

是否Rohs认证：符合生命周期：Active
包装说明：MICRO-3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.95
Factory Lead Time：15 weeks风险等级：0.59
Is Samacsys：N其他特性：LOGIC LEVEL COMPATIBLE
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：0.78 A最大漏极电流 (ID)：0.78 A
最大漏源导通电阻：0.6 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：0.54 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRLML6302TRPBF 数据手册

通过下载IRLML6302TRPBF数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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PD - 94947B  
IRLML6302PbF  
HEXFET® Power MOSFET  
l Generation V Technology  
l Ultra Low On-Resistance  
l P-Channel MOSFET  
l SOT-23 Footprint  
VDSS = -20V  
l Low Profile (<1.1mm)  
l Available in Tape and Reel  
l Fast Switching  
RDS(on) = 0.60Ω  
l Lead-Free  
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This benefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET Power MOSFETs are well  
known for, provides the designer with an extremely efficient  
and reliable device for use in a wide variety of applications.  
A customized leadframe has been incorporated into the  
standard SOT-23 package to produce a HEXFET Power  
MOSFET with the industry's smallest footprint. This  
package, dubbed the Micro3, is ideal for applications  
where printed circuit board space is at a premium. The  
low profile (<1.1mm) of the Micro3 allows it to fit easily into  
extremely thin application environments such as portable  
electronics and PCMCIA cards.  
Micro3TM  
Absolute Maximum Ratings  
Parameter  
Max.  
-0.78  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current   
-0.62  
A
-4.9  
PD@TA = 25°C  
Power Dissipation  
540  
mW  
mW/°C  
V
Linear Derating Factor  
4.3  
VGS  
Gate-to-Source Voltage  
± 12  
dv/dt  
TJ,TSTG  
Peak Diode Recovery dv/dt ‚  
Junction and Storage Temperature Range  
-5.0  
V/ns  
°C  
-55 to + 150  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambient „  
Typ.  
–––  
Max.  
230  
Units  
°C/W  
RθJA  
www.irf.com  
1
08/27/07  
IRLML6302PbF  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Conditions  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
-20 ––– –––  
V
VGS = 0V, ID = -250µA  
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -4.9 ––– mV/°C Reference to 25°C, ID = -1mA  
––– ––– 0.60  
––– ––– 0.90  
-0.70 ––– -1.5  
0.56 ––– –––  
––– ––– -1.0  
––– ––– -25  
––– ––– -100  
––– ––– 100  
––– 2.4 3.6  
––– 0.56 0.84  
––– 1.0 1.5  
––– 13 –––  
––– 18 –––  
––– 22 –––  
––– 22 –––  
––– 97 –––  
––– 53 –––  
––– 28 –––  
VGS = -4.5V, ID = -0.61A ƒ  
VGS = -2.7V, ID = -0.31A ƒ  
VDS = VGS, ID = -250µA  
VDS = -10V, ID = -0.31A  
VDS = -16V, VGS = 0V  
VDS = -16V, VGS = 0V, TJ = 125°C  
VGS = -12V  
RDS(ON)  
Static Drain-to-Source On-Resistance  
Ω
VGS(th)  
gfs  
Gate Threshold Voltage  
V
S
Forward Transconductance  
IDSS  
IGSS  
Drain-to-Source Leakage Current  
µA  
nA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
VGS = 12V  
Qg  
ID = -0.61A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
nC VDS = -16V  
VGS = -4.5V, See Fig. 6 and 9 ƒ  
VDD = -10V  
RiseTime  
ID = -0.61A  
ns  
pF  
td(off)  
tf  
Turn-Off Delay Time  
FallTime  
RG = 6.2Ω  
RD = 16Ω, See Fig. 10 ƒ  
VGS = 0V  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
VDS = -15V  
Reverse Transfer Capacitance  
ƒ = 1.0MHz, See Fig. 5  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
MOSFET symbol  
showing the  
D
S
IS  
––– ––– -0.54  
A
––– ––– -4.9  
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
p-n junction diode.  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
––– ––– -1.2  
V
TJ = 25°C, IS = -0.61A, VGS = 0V „  
––– 35  
––– 26  
53  
39  
ns  
TJ = 25°C, IF = -0.61A  
Qrr  
nC di/dt = -100A/µs „  
Notes:  
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.  
„ Surface mounted on FR-4 board, t ≤ 5sec.  
 Repetitive rating; pulse width  
limited by max. junction temperature. ( See fig. 11 )  
‚ ISD ≤ -0.61A, di/dt ≤ 76A/µs, VDD≤V(BR)DSS  
TJ ≤ 150°C  
,
www.irf.com  
2
IRLML6302PbF  
10  
10  
VGS  
- 7.5V  
- 5.0V  
- 4.0V  
- 3.5V  
- 3.0V  
- 2.5V  
- 2.0V  
VGS  
- 7.5V  
- 5.0V  
- 4.0V  
- 3.5V  
- 3.0V  
- 2.5V  
- 2.0V  
TOP  
TOP  
BOTTOM - 1.5V  
BOTTOM - 1.5V  
1
1
0.1  
0.1  
-1.5V  
20µs PULSE WIDTH  
20µs PULSE WIDTH  
= 25°C  
-1.5V  
T
= 150°C  
T
J
J
A
0.01  
0.01  
A
0.1  
1
10  
0.1  
1
10  
-V , Drain-to-Source Voltage (V)  
DS  
-V , Drain-to-Source Voltage (V)  
DS  
Fig 2. Typical Output Characteristics  
Fig 1. Typical Output Characteristics  
10  
2.0  
1.5  
1.0  
0.5  
0.0  
I
= -0.61A  
D
TJ = 25°C  
TJ = 150°C  
1
0.1  
VDS = -10V  
20µs PULSE WIDTH  
V
= -4.5V  
GS  
0.01  
A
4.5A  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
T , Junction Temperature (°C)  
-VGS , Gate-to-Source Voltage (V)  
J
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
www.irf.com  
3
IRLML6302PbF  
180  
10  
8
V
C
C
C
= 0V,  
f = 1MHz  
I
V
= -0.61A  
D
DS  
GS  
iss  
rss  
oss  
= C + C  
,
C
SHORTED  
= -16V  
gs  
gd  
gd  
ds  
160  
140  
120  
100  
80  
= C  
= C + C  
ds  
gd  
C
C
iss  
oss  
6
4
C
rss  
60  
40  
2
20  
FOR TEST CIRCUIT  
SEE FIGURE 9  
0
0
0.0  
A
A
1
10  
100  
1.0  
2.0  
3.0  
4.0  
-V , Drain-to-Source Voltage (V)  
Q , Total Gate Charge (nC)  
DS  
G
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
10  
10  
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
100µs  
1ms  
1
T = 150°C  
J
1
T = 25°C  
J
0.1  
10ms  
T
= 25°C  
= 150°C  
A
T
J
V
= 0V  
Single Pulse  
GS  
A
0.01  
0.1  
A
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1
10  
100  
-V , Source-to-Drain Voltage (V)  
-V , Drain-to-Source Voltage (V)  
DS  
SD  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
Forward Voltage  
www.irf.com  
4
IRLML6302PbF  
RD  
VDS  
Q
Q
G
VGS  
-4.5V  
D.U.T.  
Q
RG  
GS  
GD  
-
+
VDD  
V
G
-4.5V  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Charge  
Fig 10a. Switching Time Test Circuit  
Fig 9a. Basic Gate Charge Waveform  
Current Regulator  
Same Type as D.U.T.  
V
DS  
50KΩ  
90%  
.2µF  
12V  
.3µF  
-
V
+
DS  
D.U.T.  
10%  
V
GS  
V
GS  
-3mA  
t
t
r
t
t
f
d(on)  
d(off)  
I
I
D
G
Current Sampling Resistors  
Fig 9b. Gate Charge Test Circuit  
Fig 10b. Switching Time Waveforms  
1000  
D = 0.50  
100  
10  
1
0.20  
0.10  
0.05  
0.02  
0.01  
P
2
DM  
t
1
SINGLE PULSE  
(THERMAL RESPONSE)  
t
2
Notes:  
1. Duty factor D =  
t / t  
1
2. Peak T = P  
J
x Z  
+ T  
thJA A  
DM  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  
www.irf.com  
5
IRLML6302PbF  
Peak Diode Recovery dv/dt Test Circuit  
+
ƒ
-
Circuit Layout Considerations  
• Low Stray Inductance  
• Ground Plane  
• Low Leakage Inductance  
Current Transformer  
D.U.T  
+
‚
-
„
-
+
**  

RG  
• dv/dt controlled by RG  
• ISD controlled by Duty Factor "D"  
• D.U.T. - Device Under Test  
+
-
*
VDD  
VGS  
*
* Reverse Polarity for P-Channel  
** Use P-Channel Driver for P-Channel Measurements  
Driver Gate Drive  
P.W.  
Period  
Period  
D =  
P.W.  
V
[
=10V  
] ***  
GS  
D.U.T. I Waveform  
SD  
Reverse  
Recovery  
Current  
Body Diode Forward  
Current  
di/dt  
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  
V
[
DD  
]
Re-Applied  
Voltage  
Body Diode  
Forward Drop  
Inductor Curent  
I
[
]
SD  
Ripple ≤ 5%  
*** VGS = 5.0V for Logic Level and 3V Drive Devices  
Fig 13. For P-Channel HEXFETS  
www.irf.com  
6
IRLML6302PbF  
Micro3 (SOT-23) (Lead-Free) Package Outline  
Dimensions are shown in millimeters (inches)  
Micro3 (SOT-23 / TO-236AB) Part Marking Information  
Note: For the most current drawing please refer to IR website at http://www.irf.com/package  
www.irf.com  
7
IRLML6302PbF  
Micro3™ Tape & Reel Information  
Dimensions are shown in millimeters (inches)  
2.05 ( .080 )  
1.95 ( .077 )  
1.6 ( .062 )  
1.5 ( .060 )  
1.32 ( .051 )  
1.12 ( .045 )  
1.85 ( .072 )  
1.65 ( .065 )  
4.1 ( .161 )  
3.9 ( .154 )  
TR  
3.55 ( .139 )  
3.45 ( .136 )  
8.3 ( .326 )  
7.9 ( .312 )  
FEED DIRECTION  
4.1 ( .161 )  
3.9 ( .154 )  
0.35 ( .013 )  
0.25 ( .010 )  
1.1 ( .043 )  
0.9 ( .036 )  
178.00  
( 7.008 )  
MAX.  
9.90 ( .390 )  
8.40 ( .331 )  
NOTES:  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
Note: For the most current drawing please refer to IR website at http://www.irf.com/package  
Data and specifications subject to change without notice.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information. 08/2007  
www.irf.com  
8

IRLML6302TRPBF CAD模型

  • 引脚图

  • 封装焊盘图

    • IRLML6302TRPBF 替代型号

    型号 制造商 描述 替代类型 文档
    IRLML6302TR INFINEON generation v technology 类似代替
    IRLML6302PBF INFINEON HEXFET Power MOSFET 功能相似

    IRLML6302TRPBF 相关器件

    型号 制造商 描述 价格 文档
    IRLML6344 INFINEON The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.  获取价格
    IRLML6344 HOTTECH SOT-23 获取价格
    IRLML6344PBF INFINEON Industry-standard SOT-23 Package 获取价格
    IRLML6344PBF_15 INFINEON Industry-standard SOT-23 Package 获取价格
    IRLML6344TR UMW 种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:5A;Vgs(th)(V):±12;漏源导通电阻:29mΩ@10V;漏源导通电阻:37mΩ@4.5V 获取价格
    IRLML6344TRPBF TYSEMI HEXFET Power MOSFET Industry-standard SOT-23 Package Lower Conduction Losses 获取价格
    IRLML6344TRPBF INFINEON HEXFETPower MOSFET 获取价格
    IRLML6346 INFINEON The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.  获取价格
    IRLML6346 HOTTECH SOT-23 获取价格
    IRLML6346PBF INFINEON HEXFET Power MOSFET 获取价格

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