IRLML6344 [INFINEON]

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
IRLML6344
型号: IRLML6344
厂家: Infineon    Infineon
描述:

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. 

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IRLML6344TRPbF  
HEXFET® Power MOSFET  
VDS  
30  
V
V
G
S
1
2
VGS Max  
± 12  
RDS(on) max  
(@VGS = 4.5V)  
3
D
29  
37  
mΩ  
mΩ  
TM  
Micro3 (SOT-23)  
RDS(on) max  
(@VGS = 2.5V)  
IRLML6344TRPbF  
Application(s)  
Load/ System Switch  
Features and Benefits  
Benefits  
Low RDSon (<29m )  
Ω
Lower Conduction Losses  
Multi-vendor compatibility  
Environmentally friendly  
Increased Reliability  
Industry-standard SOT-23 Package  
results in  
RoHS compliant containing no lead, no bromide and no halogen  
MSL1, Consumer Qualification  
Standard Pack  
Base Part Number  
Orderable Part Number  
Package Type  
Form  
Quantity  
IRLML6344TRPbF  
Micro3 (SOT-23)  
Tape and Reel  
3000  
IRLML6344TRPbF  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
V
VDS  
30  
5.0  
4.0  
25  
Drain-Source Voltage  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
A
PD @TA = 25°C  
PD @TA = 70°C  
1.3  
0.8  
0.01  
± 12  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
W
W/°C  
V
VGS  
Gate-to-Source Voltage  
TJ, TSTG  
-55 to + 150  
Junction and Storage Temperature Range  
°C  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
100  
Units  
Rθ  
Junction-to-Ambient  
JA  
°C/W  
Rθ  
–––  
99  
JA  
Junction-to-Ambient (t<10s)  
ORDERING INFORMATION:  
See detailed ordering and shipping information on the last page of this data sheet.  
1
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IRLML6344TRPbF  
Electric Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol  
Parameter  
Min. Typ. Max. Units  
Conditions  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
30  
–––  
0.02  
22  
–––  
–––  
29  
V
VGS = 0V, ID = 250μA  
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient  
–––  
–––  
–––  
0.5  
V/°C Reference to 25°C, ID = 1mA  
VGS = 4.5V, ID = 5.0A  
RDS(on)  
mΩ  
Static Drain-to-Source On-Resistance  
27  
37  
VGS = 2.5V, ID = 4.0A  
VGS(th)  
IDSS  
Gate Threshold Voltage  
0.8  
–––  
–––  
–––  
–––  
1.7  
–––  
6.8  
0.3  
2.4  
4.2  
5.6  
22  
1.1  
V
VDS = VGS, ID = 10μA  
–––  
–––  
–––  
–––  
–––  
19  
1.0  
VDS =24V, VGS = 0V  
Drain-to-Source Leakage Current  
μA  
150  
100  
-100  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
VDS = 24V, VGS = 0V, TJ = 125°C  
IGSS  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Internal Gate Resistance  
Forward Transconductance  
Total Gate Charge  
VGS = 12V  
GS = -12V  
nA  
V
RG  
Ω
gfs  
Qg  
S
VDS = 10V, ID = 5.0A  
ID = 5.0A  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
nC  
ns  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
VDS =15V  
VGS = 4.5V  
VDD =15V  
Rise Time  
ID = 1.0A  
Ω
RG = 6.8  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
9.1  
650  
65  
VGS = 4.5V  
Ciss  
Coss  
Crss  
Input Capacitance  
VGS = 0V  
pF  
Output Capacitance  
VDS = 25V  
Reverse Transfer Capacitance  
46  
ƒ = 1.0MHz  
Source - Drain Ratings and Characteristics  
Symbol  
Parameter  
Min. Typ. Max. Units  
Conditions  
IS  
Continuous Source Current  
MOSFET symbol  
D
–––  
–––  
–––  
1.3  
(Body Diode)  
showing the  
A
G
ISM  
Pulsed Source Current  
(Body Diode)  
integral reverse  
–––  
25  
S
p-n junction diode.  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
–––  
–––  
–––  
–––  
10  
1.2  
15  
V
TJ = 25°C, IS = 5.0A, VGS = 0V  
ns TJ = 25°C, VR = 15V, IF=1.3A  
Qrr  
3.8  
5.7  
nC di/dt = 100A/μs  
Notes  through „ are on page 10  
2
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IRLML6344TRPbF  
100  
10  
1
100  
10  
1
VGS  
10V  
VGS  
10V  
TOP  
TOP  
4.5V  
2.5V  
2.0V  
1.9V  
1.7V  
1.5V  
1.4V  
4.5V  
2.5V  
2.0V  
1.9V  
1.7V  
1.5V  
1.4V  
BOTTOM  
BOTTOM  
1.4V  
1.4V  
1
60μs PULSE WIDTH  
60μs PULSE WIDTH  
Tj = 150°C  
Tj = 25°C  
0.1  
0.1  
0.1  
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
DS  
V
, Drain-to-Source Voltage (V)  
DS  
Fig 2. Typical Output Characteristics  
Fig 1. Typical Output Characteristics  
100  
10  
2.0  
1.5  
1.0  
0.5  
I
= 5.0A  
D
V
= 4.5V  
GS  
T
= 150°C  
J
1
T
= 25°C  
V
J
= 15V  
DS  
60μs PULSE WIDTH  
0.1  
1.0  
1.5  
2.0  
2.5  
-60 -40 -20  
0
20 40 60 80 100 120140 160  
T
J
, Junction Temperature (°C)  
V
, Gate-to-Source Voltage (V)  
GS  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
3
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IRLML6344TRPbF  
14.0  
12.0  
10.0  
8.0  
10000  
1000  
100  
V
= 0V,  
= C  
f = 1 MHZ  
GS  
I = 5.0A  
D
V
= 24V  
= 15V  
= 6.0V  
C
C
C
+ C , C  
SHORTED  
ds  
DS  
iss  
gs  
gd  
= C  
V
rss  
oss  
gd  
= C + C  
DS  
V
ds  
gd  
DS  
C
iss  
6.0  
C
C
oss  
rss  
4.0  
2.0  
0.0  
10  
0.0  
4.0  
8.0  
12.0  
16.0  
20.0  
1
10  
, Drain-to-Source Voltage (V)  
100  
Q , Total Gate Charge (nC)  
V
G
DS  
Fig 5. Typical Capacitance Vs.  
Fig 6. Typical Gate Charge Vs.  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
100  
10  
100  
10  
1
OPERATION IN THIS AREA  
LIMITED BY R  
(on)  
DS  
1msec  
T
= 150°C  
J
100μsec  
1
T
= 25°C  
0.1  
0.01  
J
T
= 25°C  
A
Tj = 150°C  
Single Pulse  
10msec  
10  
V
= 0V  
1.0  
GS  
0.1  
0.1  
1
100  
0.4  
0.5  
V
0.6  
0.7  
0.8  
0.9  
1.1  
V
, Drain-to-Source Voltage (V)  
DS  
, Source-to-Drain Voltage (V)  
SD  
Fig 7. Typical Source-Drain Diode  
Fig 8. Maximum Safe Operating Area  
Forward Voltage  
4
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IRLML6344TRPbF  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
RD  
VDS  
VGS  
D.U.T.  
RG  
+VDD  
-
VGS  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
V
DS  
90%  
25  
50  
75  
100  
125  
150  
T
, Ambient Temperature (°C)  
A
10%  
Fig 9. Maximum Drain Current Vs.  
V
GS  
Ambient Temperature  
t
t
r
t
t
f
d(on)  
d(off)  
Fig 10b. Switching Time Waveforms  
1000  
100  
10  
D = 0.50  
0.20  
0.10  
0.05  
0.02  
0.01  
1
0.1  
Notes:  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthja + T  
0.01  
SINGLE PULSE  
( THERMAL RESPONSE )  
A
0.001  
1E-006  
1E-005  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t
, Rectangular Pulse Duration (sec)  
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient  
5
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IRLML6344TRPbF  
70  
60  
50  
40  
30  
20  
10  
80  
60  
40  
20  
0
I
= 5.0A  
D
Vgs = 2.5V  
T
= 125°C  
J
Vgs = 4.5V  
T
= 25°C  
J
0
1
2
3
4
5
6
7
8
9
10 11 12  
0
10  
20  
30  
40  
I , Drain Current (A)  
D
V
Gate -to -Source Voltage (V)  
GS,  
Fig 13. Typical On-Resistance Vs. Drain  
Fig 12. Typical On-Resistance Vs. Gate  
Current  
Voltage  
Id  
Vds  
Vgs  
L
VCC  
DUT  
0
Vgs(th)  
20K  
Qgs1  
Qgs2  
Qgodr  
Qgd  
Fig 14a. Basic Gate Charge Waveform  
Fig 14b. Gate Charge Test Circuit  
6
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IRLML6344TRPbF  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
100  
80  
60  
40  
20  
0
I
I
= 10μA  
D
D
= 250μA  
1E-005 0.0001 0.001  
0.01  
0.1  
1
10  
-75 -50 -25  
0
25 50 75 100 125 150  
Time (sec)  
T , Temperature ( °C )  
J
Fig 16. Typical Power Vs. Time  
Fig 15. Typical Threshold Voltage Vs.  
Junction Temperature  
7
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IRLML6344TRPbF  
Micro3(SOT-23) Package Outline  
Dimensions are shown in millimeters (inches)  
DIMENSIONS  
A
5
6
MILLIMETERS  
INCHES  
SYMBOL  
D
MIN  
0.89  
0.01  
0.88  
0.30  
0.08  
2.80  
2.10  
1.20  
0.95  
1.90  
0.40  
0.54  
0.25  
0
MAX  
1.12  
0.10  
1.02  
0.50  
0.20  
3.04  
2.64  
1.40  
BSC  
BSC  
0.60  
REF  
BSC  
8
MIN  
MAX  
A
A1  
A2  
b
c
D
E
E1  
e
A
0.0004  
A2  
C
3
E
6
E1  
0.15 [0.006]  
M
C
B A  
1
2
0.10 [0.004]  
C
A1  
3X  
b
e
0.20 [0.008] M  
C
B A  
B
5
NOTES:  
e1  
e1  
L
L1  
L2  
H
4
L1  
REF  
BSC  
8
Recommended Footprint  
c
0
0.972  
0.950  
2.742  
L2  
0.802  
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994  
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].  
3. CONTROLLING DIMENSION: MILLIMETER.  
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.  
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.  
3X L  
7
1.900  
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES  
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS  
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.  
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.  
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.  
Micro3(SOT-23) Part Marking Information  
Notes: This part marking information applies to devices produced after 02/26/2001  
DATE CODE MARKING INSTRUCTIONS  
DAT E CODE  
PART NUMBER  
LEAD FREE  
WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR  
WORK  
WE E K  
YEAR  
Y
W
2011 2001  
2012 2002  
2013 2003  
2014 2004  
2015 2005  
2016 2006  
2017 2007  
2018 2008  
2019 2009  
2020 2010  
1
2
3
4
5
6
7
8
9
0
01  
02  
03  
04  
A
B
C
D
Cu WIRE  
HALOGEN FREE  
LOT CODE  
X = PART NUMBER CODE REFERENCE:  
A= IRLML2402  
B = IRLML2803  
C = IRLML6302  
D = IRLML5103  
E = IRLML6402  
F = IRLML6401  
G = IRLML2502  
H = IRLML5203  
S = IRLML6244  
T = IRLML6246  
U = IRLML6344  
V= IRLML6346  
W = IRFML8244  
X = IRLML2244  
Y = IRLML2246  
Z = IRFML9244  
24  
25  
26  
X
Y
Z
WW = (27-52) IF PRECEDED BY ALETTER  
WORK  
I
= IRLML0030  
YEAR  
Y
WE E K  
W
J = IRLML2030  
K = IRLML0100  
L = IRLML0060  
M= IRLML0040  
N = IRLML2060  
P = IRLML9301  
R = IRLML9303  
2011 2001  
2012 2002  
2013 2003  
2014 2004  
2015 2005  
2016 2006  
2017 2007  
2018 2008  
2019 2009  
2020 2010  
A
B
C
D
E
27  
28  
29  
30  
A
B
C
D
F
G
H
J
Note: A line above the work week  
(as s hown here) indicates Lead - F ree.  
K
50  
51  
52  
X
Y
Z
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/  
8
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IRLML6344TRPbF  
Micro3(SOT-23) Tape & Reel Information  
Dimensions are shown in millimeters (inches)  
2.05 ( .080 )  
1.95 ( .077 )  
1.6 ( .062 )  
1.5 ( .060 )  
1.32 ( .051 )  
1.12 ( .045 )  
1.85 ( .072 )  
1.65 ( .065 )  
4.1 ( .161 )  
3.9 ( .154 )  
TR  
3.55 ( .139 )  
3.45 ( .136 )  
8.3 ( .326 )  
7.9 ( .312 )  
FEED DIRECTION  
4.1 ( .161 )  
3.9 ( .154 )  
0.35 ( .013 )  
0.25 ( .010 )  
1.1 ( .043 )  
0.9 ( .036 )  
178.00  
( 7.008 )  
MAX.  
9.90 ( .390 )  
8.40 ( .331 )  
NOTES:  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/  
9
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IRLML6344TRPbF  
Qualification information†  
Consumer††  
(per JEDEC JESD47F ††† guidelines )  
Qualification level  
MSL1  
Moisture Sensitivity Level  
RoHS compliant  
Micro3(SOT-23)  
(per IPC/JEDEC J-STD-020D†††  
Yes  
)
†
Qualification standards can be found at International Rectifier’s web site  
http://www.irf.com/product-info/reliability  
††  
Higher qualification ratings may be available should the user have such requirements.  
Please contact your International Rectifier sales representative for further information:  
http://www.irf.com/whoto-call/salesrep/  
††† Applicable version of JEDEC standard at the time of product release.  
Notes:  
 Repetitive rating; pulse width limited by max. junction temperature.  
‚ Pulse width 400μs; duty cycle 2%.  
ƒ Surface mounted on 1 in square Cu board  
„ Refer to application note #AN-994.  
Revision History  
Date  
Comment  
Formatted the data sheet using the IR Corporate template.  
Updated part marking on page 8.  
12/19/2014  
Corrected Typical Output curve Fig.2 on page 3 (used to be exact same as Fig.1)  
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA  
To contact International Rectifier, please visit http://www.irf.com/whoto-call/  
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IMPORTANT NOTICE  
The information given in this document shall in no For further information on the product, technology,  
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please  
characteristics (“Beschaffenheitsgarantie”) .  
contact your nearest Infineon Technologies office  
(www.infineon.com).  
With respect to any examples, hints or any typical  
values stated herein and/or any information  
regarding the application of the product, Infineon  
Technologies hereby disclaims any and all  
warranties and liabilities of any kind, including  
without limitation warranties of non-infringement  
of intellectual property rights of any third party.  
WARNINGS  
Due to technical requirements products may  
contain dangerous substances. For information on  
the types in question please contact your nearest  
Infineon Technologies office.  
In addition, any information given in this document  
is subject to customers compliance with its  
obligations stated in this document and any  
applicable legal requirements, norms and  
standards concerning customers products and any  
use of the product of Infineon Technologies in  
customers applications.  
Except as otherwise explicitly approved by Infineon  
Technologies in a written document signed by  
authorized  
representatives  
of  
Infineon  
Technologies, Infineon Technologies’ products may  
not be used in any applications where a failure of  
the product or any consequences of the use thereof  
can reasonably be expected to result in personal  
injury.  
The data contained in this document is exclusively  
intended for technically trained staff. It is the  
responsibility of customers technical departments  
to evaluate the suitability of the product for the  
intended application and the completeness of the  
product information given in this document with  
respect to such application.  

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