IRLML6344 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;型号: | IRLML6344 |
厂家: | Infineon |
描述: | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
文件: | 总11页 (文件大小:210K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRLML6344TRPbF
HEXFET® Power MOSFET
VDS
30
V
V
G
S
1
2
VGS Max
± 12
RDS(on) max
(@VGS = 4.5V)
3
D
29
37
mΩ
mΩ
TM
Micro3 (SOT-23)
RDS(on) max
(@VGS = 2.5V)
IRLML6344TRPbF
Application(s)
• Load/ System Switch
Features and Benefits
Benefits
Low RDSon (<29m )
Ω
Lower Conduction Losses
Multi-vendor compatibility
Environmentally friendly
Increased Reliability
Industry-standard SOT-23 Package
results in
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer Qualification
Standard Pack
Base Part Number
Orderable Part Number
Package Type
Form
Quantity
™
IRLML6344TRPbF
Micro3 (SOT-23)
Tape and Reel
3000
IRLML6344TRPbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
V
VDS
30
5.0
4.0
25
Drain-Source Voltage
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
PD @TA = 25°C
PD @TA = 70°C
1.3
0.8
0.01
± 12
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
W
W/°C
V
VGS
Gate-to-Source Voltage
TJ, TSTG
-55 to + 150
Junction and Storage Temperature Range
°C
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
100
Units
Rθ
Junction-to-Ambient
JA
°C/W
Rθ
–––
99
JA
Junction-to-Ambient (t<10s)
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
1
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IRLML6344TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
0.02
22
–––
–––
29
V
VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
–––
–––
0.5
V/°C Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 5.0A
RDS(on)
mΩ
Static Drain-to-Source On-Resistance
27
37
VGS = 2.5V, ID = 4.0A
VGS(th)
IDSS
Gate Threshold Voltage
0.8
–––
–––
–––
–––
1.7
–––
6.8
0.3
2.4
4.2
5.6
22
1.1
V
VDS = VGS, ID = 10μA
–––
–––
–––
–––
–––
19
1.0
VDS =24V, VGS = 0V
Drain-to-Source Leakage Current
μA
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
VGS = 12V
GS = -12V
nA
V
RG
Ω
gfs
Qg
S
VDS = 10V, ID = 5.0A
ID = 5.0A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ns
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
VDS =15V
VGS = 4.5V
VDD =15V
Rise Time
ID = 1.0A
Ω
RG = 6.8
td(off)
tf
Turn-Off Delay Time
Fall Time
9.1
650
65
VGS = 4.5V
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
pF
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
46
ƒ = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
D
–––
–––
–––
1.3
(Body Diode)
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
–––
25
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
10
1.2
15
V
TJ = 25°C, IS = 5.0A, VGS = 0V
ns TJ = 25°C, VR = 15V, IF=1.3A
Qrr
3.8
5.7
nC di/dt = 100A/μs
Notes through are on page 10
2
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IRLML6344TRPbF
100
10
1
100
10
1
VGS
10V
VGS
10V
TOP
TOP
4.5V
2.5V
2.0V
1.9V
1.7V
1.5V
1.4V
4.5V
2.5V
2.0V
1.9V
1.7V
1.5V
1.4V
BOTTOM
BOTTOM
1.4V
1.4V
1
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.1
0.1
0.1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
2.0
1.5
1.0
0.5
I
= 5.0A
D
V
= 4.5V
GS
T
= 150°C
J
1
T
= 25°C
V
J
= 15V
DS
≤60μs PULSE WIDTH
0.1
1.0
1.5
2.0
2.5
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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IRLML6344TRPbF
14.0
12.0
10.0
8.0
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
I = 5.0A
D
V
= 24V
= 15V
= 6.0V
C
C
C
+ C , C
SHORTED
ds
DS
iss
gs
gd
= C
V
rss
oss
gd
= C + C
DS
V
ds
gd
DS
C
iss
6.0
C
C
oss
rss
4.0
2.0
0.0
10
0.0
4.0
8.0
12.0
16.0
20.0
1
10
, Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
V
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1msec
T
= 150°C
J
100μsec
1
T
= 25°C
0.1
0.01
J
T
= 25°C
A
Tj = 150°C
Single Pulse
10msec
10
V
= 0V
1.0
GS
0.1
0.1
1
100
0.4
0.5
V
0.6
0.7
0.8
0.9
1.1
V
, Drain-to-Source Voltage (V)
DS
, Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRLML6344TRPbF
5.0
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
T
, Ambient Temperature (°C)
A
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
0.01
SINGLE PULSE
( THERMAL RESPONSE )
A
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
5
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IRLML6344TRPbF
70
60
50
40
30
20
10
80
60
40
20
0
I
= 5.0A
D
Vgs = 2.5V
T
= 125°C
J
Vgs = 4.5V
T
= 25°C
J
0
1
2
3
4
5
6
7
8
9
10 11 12
0
10
20
30
40
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Typical On-Resistance Vs. Drain
Fig 12. Typical On-Resistance Vs. Gate
Current
Voltage
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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IRLML6344TRPbF
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
80
60
40
20
0
I
I
= 10μA
D
D
= 250μA
1E-005 0.0001 0.001
0.01
0.1
1
10
-75 -50 -25
0
25 50 75 100 125 150
Time (sec)
T , Temperature ( °C )
J
Fig 16. Typical Power Vs. Time
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
7
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IRLML6344TRPbF
Micro3™(SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
A
5
6
MILLIMETERS
INCHES
SYMBOL
D
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
MAX
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MIN
MAX
A
A1
A2
b
c
D
E
E1
e
A
0.0004
A2
C
3
E
6
E1
0.15 [0.006]
M
C
B A
1
2
0.10 [0.004]
C
A1
3X
b
e
0.20 [0.008] M
C
B A
B
5
NOTES:
e1
e1
L
L1
L2
H
4
L1
REF
BSC
8
Recommended Footprint
c
0
0.972
0.950
2.742
L2
0.802
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
3X L
7
1.900
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
Micro3™(SOT-23) Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
DATE CODE MARKING INSTRUCTIONS
DAT E CODE
PART NUMBER
LEAD FREE
WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
WORK
WE E K
YEAR
Y
W
2011 2001
2012 2002
2013 2003
2014 2004
2015 2005
2016 2006
2017 2007
2018 2008
2019 2009
2020 2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
Cu WIRE
HALOGEN FREE
LOT CODE
X = PART NUMBER CODE REFERENCE:
A= IRLML2402
B = IRLML2803
C = IRLML6302
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
S = IRLML6244
T = IRLML6246
U = IRLML6344
V= IRLML6346
W = IRFML8244
X = IRLML2244
Y = IRLML2246
Z = IRFML9244
24
25
26
X
Y
Z
WW = (27-52) IF PRECEDED BY ALETTER
WORK
I
= IRLML0030
YEAR
Y
WE E K
W
J = IRLML2030
K = IRLML0100
L = IRLML0060
M= IRLML0040
N = IRLML2060
P = IRLML9301
R = IRLML9303
2011 2001
2012 2002
2013 2003
2014 2004
2015 2005
2016 2006
2017 2007
2018 2008
2019 2009
2020 2010
A
B
C
D
E
27
28
29
30
A
B
C
D
F
G
H
J
Note: A line above the work week
(as s hown here) indicates Lead - F ree.
K
50
51
52
X
Y
Z
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRLML6344TRPbF
Micro3™(SOT-23) Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
1.32 ( .051 )
1.12 ( .045 )
1.85 ( .072 )
1.65 ( .065 )
4.1 ( .161 )
3.9 ( .154 )
TR
3.55 ( .139 )
3.45 ( .136 )
8.3 ( .326 )
7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
9
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IRLML6344TRPbF
Qualification information†
Consumer††
(per JEDEC JESD47F ††† guidelines )
Qualification level
MSL1
Moisture Sensitivity Level
RoHS compliant
Micro3™(SOT-23)
(per IPC/JEDEC J-STD-020D†††
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board
Refer to application note #AN-994.
Revision History
Date
Comment
•
•
•
Formatted the data sheet using the IR Corporate template.
Updated part marking on page 8.
12/19/2014
Corrected Typical Output curve Fig.2 on page 3 (used to be exact same as Fig.1)
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
相关型号:
IRLML6346
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
IRLML6346TRPBF
Industry-standard SOT-23 Package MSL1, Consumer Qualification Multi-vendor compatibility
TYSEMI
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