IRLMS1503TRHR [INFINEON]

Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6;
IRLMS1503TRHR
型号: IRLMS1503TRHR
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6

开关 脉冲 光电二极管 晶体管
文件: 总8页 (文件大小:180K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PD - 91508D  
IRLMS1503  
HEXFET® Power MOSFET  
l Generation V Technology  
l Micro6 Package Style  
l Ultra Low RDS(on)  
A
1
2
6
D
D
D
VDSS = 30V  
5
D
l N-Channel MOSFET  
3
4
G
S
RDS(on) = 0.10Ω  
Description  
Top View  
Fifth Generation HEXFET® power MOSFETs from  
International Rectifier utilize advanced processing  
techniques to achieve extremely low on-resistance  
per silicon area. This benefit, combined with the fast  
switching speed and ruggedized device design that  
HEXFET® power MOSFETs are well known for,  
provides the designer with an extremely efficient and  
reliable device for use in a wide variety of applications.  
The Micro6package with its customized leadframe  
produces a HEXFET® power MOSFET with RDS(on)  
60% less than a similar size SOT-23. This package is  
idealforapplicationswhereprintedcircuitboardspace  
isatapremium. It'suniquethermaldesignandRDS(on)  
reduction enables a current-handling increase of  
nearly 300% compared to the SOT-23.  
Micro6  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
3.2  
2.6  
A
18  
PD @TA = 25°C  
Power Dissipation  
1.7  
13  
W
mW/°C  
V
Linear Derating Factor  
VGS  
Gate-to-Source Voltage  
± 20  
dv/dt  
TJ,TSTG  
Peak Diode Recovery dv/dt ‚  
Junction and Storage Temperature Range  
5.0  
V/ns  
°C  
-55 to + 150  
Thermal Resistance Ratings  
Parameter  
Min.  
Typ.  
Max  
Units  
RθJA  
Maximum Junction-to-Ambient „  
–––  
–––  
75  
°C/W  
www.irf.com  
1
3/17/04  
IRLMS1503  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Conditions  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
30 ––– –––  
V
VGS = 0V, ID = 250µA  
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C Reference to 25°C, ID = 1mA  
––– ––– 0.100  
––– ––– 0.20  
1.0 ––– –––  
1.1 ––– –––  
––– ––– 1.0  
––– ––– 25  
––– ––– -100  
––– ––– 100  
––– 6.4 9.6  
––– 1.1 1.7  
––– 1.9 2.8  
––– 4.6 –––  
––– 4.4 –––  
––– 10 –––  
––– 2.0 –––  
––– 210 –––  
––– 90 –––  
––– 32 –––  
VGS = 10V, ID = 2.2A ƒ  
VGS = 4.5V, ID = 1.1A ƒ  
VDS = VGS, ID = 250µA  
VDS = 10V, ID = 1.1A  
VDS = 24V, VGS = 0V  
VDS = 24V, VGS = 0V, TJ = 125°C  
VGS = -20V  
RDS(on)  
Static Drain-to-Source On-Resistance  
VGS(th)  
gfs  
Gate Threshold Voltage  
V
S
Forward Transconductance  
IDSS  
IGSS  
Drain-to-Source Leakage Current  
µA  
nA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
VGS = 20V  
Qg  
ID = 2.2A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
nC VDS = 24V  
VGS = 10V, See Fig. 6 and 9 ƒ  
VDD = 15V  
RiseTime  
ID = 2.2A  
ns  
pF  
td(off)  
tf  
Turn-Off Delay Time  
FallTime  
RG = 6.0Ω  
RD = 6.7Ω, See Fig. 10 ƒ  
VGS = 0V  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
VDS = 25V  
Reverse Transfer Capacitance  
ƒ = 1.0MHz, See Fig. 5  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
MOSFET symbol  
showing the  
D
IS  
–––  
–––  
–––  
1.7  
18  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
–––  
p-n junction diode.  
S
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse RecoveryCharge  
––– ––– 1.2  
V
TJ = 25°C, IS = 2.2A, VGS = 0V ƒ  
TJ = 25°C, IF = 2.2A  
––– 36  
––– 39  
54  
58  
ns  
nC  
Qrr  
di/dt = 100A/µs ƒ  
Notes:  
 Repetitive rating; pulse width limited by  
ƒ Pulse width 300µs; duty cycle 2%.  
max. junction temperature. ( See fig. 11 )  
‚ ISD 2.2A, di/dt 150A/µs, VDD V(BR)DSS  
,
„ Surface mounted on FR-4 board, t 5sec.  
TJ 150°C  
2
www.irf.com  
IRLMS1503  
100  
10  
1
100  
10  
1
VGS  
15V  
VGS  
15V  
TOP  
TOP  
10V  
10V  
7.0V  
5.5V  
4.5V  
4.0V  
3.5V  
7.0V  
5.5V  
4.5V  
4.0V  
3.5V  
BOTTOM3.0V  
BOTTOM3.0V  
3.0V  
3.0V  
20µs PULSE WIDTH  
T = 150 C  
J
20µs PULSE WIDTH  
°
°
T = 25 C  
J
0.1  
0.1  
0.1  
0.1  
1
10  
1
10  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 2. Typical Output Characteristics  
Fig 1. Typical Output Characteristics  
100  
2.0  
1.5  
1.0  
0.5  
0.0  
2.2A  
=
I
D
°
T = 25 C  
J
10  
°
T = 150 C  
J
1
V
= 10V  
DS  
20µs PULSE WIDTH  
V
= 10V  
GS  
0.1  
3.0  
4.0  
5.0  
6.0 7.0  
8.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
V
, Gate-to-Source Voltage (V)  
T , Junction Temperature ( C)  
J
GS  
Fig 4. Normalized On-Resistance  
Fig 3. Typical Transfer Characteristics  
Vs. Temperature  
www.irf.com  
2
IRLMS1503  
20  
16  
12  
8
350  
I
D
= 2.2A  
V
= 0V,  
f = 1MHz  
gd , ds  
GS  
C
= C + C  
C
SHORTED  
iss  
gs  
V
V
= 24V  
= 15V  
C
= C  
gd  
DS  
DS  
300  
250  
200  
150  
100  
50  
rss  
C
= C + C  
ds  
oss  
gd  
C
iss  
C
oss  
4
C
rss  
FOR TEST CIRCUIT  
SEE FIGURE 9  
0
0
1
10  
100  
0
2
4
6
8
10  
V
, Drain-to-Source Voltage (V)  
Q , Total Gate Charge (nC)  
DS  
G
Fig 5. Typical Capacitance Vs.  
Fig 6. Typical Gate Charge Vs.  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
100  
100  
10  
1
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
10us  
100us  
1ms  
10  
°
T = 150 C  
J
°
T = 25 C  
J
1
10ms  
°
T = 25 C  
C
°
T = 150 C  
Single Pulse  
J
V
= 0 V  
GS  
0.1  
0.4  
0.1  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1
10  
100  
V
,Source-to-Drain Voltage (V)  
V
, Drain-to-Source Voltage (V)  
SD  
DS  
Fig 7. Typical Source-Drain Diode  
Fig 8. Maximum Safe Operating Area  
Forward Voltage  
4
www.irf.com  
IRLMS1503  
RD  
VDS  
Q
G
10V  
VGS  
D.U.T.  
Q
Q
GD  
GS  
RG  
+ VDD  
-
V
G
10V  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Charge  
Fig 9a. Basic Gate Charge Waveform  
Fig 10a. Switching Time Test Circuit  
Current Regulator  
Same Type as D.U.T.  
V
DS  
50KΩ  
90%  
.2µF  
12V  
.3µF  
+
V
DS  
D.U.T.  
-
10%  
V
GS  
V
GS  
t
t
r
t
t
f
3mA  
d(on)  
d(off)  
I
I
D
G
Current Sampling Resistors  
Fig 9b. Gate Charge Test Circuit  
Fig 10b. Switching Time Waveforms  
100  
10  
1
D = 0.50  
0.20  
0.10  
0.05  
0.02  
0.01  
P
2
DM  
t
1
SINGLE PULSE  
(THERMAL RESPONSE)  
t
2
Notes:  
1. Duty factor D =  
t / t  
1
2. Peak T =P  
J
x Z  
+ T  
thJA A  
DM  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  
www.irf.com  
4
IRLMS1503  
Peak Diode Recovery dv/dt Test Circuit  
+
Circuit Layout Considerations  
Low Stray Inductance  
Ground Plane  
Low Leakage Inductance  
Current Transformer  
D.U.T  
ƒ
-
+
‚
„
-
+
-

RG  
dv/dt controlled by RG  
+
-
Driver same type as D.U.T.  
ISD controlled by Duty Factor "D"  
D.U.T. - Device Under Test  
VDD  
Driver Gate Drive  
P.W.  
P.W.  
Period  
Period  
D =  
V
=10V  
*
GS  
D.U.T. I Waveform  
SD  
Reverse  
Recovery  
Current  
Body Diode Forward  
Current  
di/dt  
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  
V
DD  
Re-Applied  
Voltage  
Body Diode  
Forward Drop  
Inductor Curent  
I
SD  
Ripple 5%  
* VGS = 5V for Logic Level Devices  
Fig 13. For N-channel HEXFET® power MOSFET s  
6
www.irf.com  
IRLMS1503  
Package Outline  
Micro6ä  
LEAD ASSIGNMENTS  
RECOMMENDED FOOTPRINT  
3.00 (.118 )  
2.80 (.111 )  
-B-  
2X 0.95 (.0375 )  
D
D
S
1.75 (.068 )  
1.50 (.060 )  
6
1
5
2
4
3
6X (1.06 (.042 )  
3.00 (.118 )  
2.60 (.103 )  
6
1
5
4
-A-  
2.20 (.087 )  
2
3
D
D
G
0.95 ( .0375 )  
2X  
0.50 (.019 )  
6X  
6X 0.65 (.025 )  
0.35 (.014 )  
0.15 (.006 ) M C A S B S  
0O -10O  
0.20 (.007 )  
0.09 (.004 )  
6X  
1.30 (.051 )  
0.90 (.036 )  
1.45 (.057 )  
0.90 (.036 )  
-C-  
0.10 (.004 )  
SURFACES  
0.15 (.006 )  
MAX.  
0.60 (.023 )  
0.10 (.004 )  
6
NOTES :  
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.  
2. CONTROLLING DIMENSION : MILLIMETER.  
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).  
Part Marking Information  
Micro6ä  
Note: A line above the work week  
(as shown here) indicates Lead-Free.  
www.irf.com  
6
IRLMS1503  
Tape & Reel Information  
Micro6ä  
8mm  
FEED DIRECTION  
4mm  
NOTES :  
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
178.00  
( 7.008 )  
MAX.  
9.90 ( .390 )  
8.40 ( .331 )  
NOTES:  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
Data and specifications subject to change without notice.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information. 03/04  
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