IRLMS1503TRHR [INFINEON]
Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6;
| 型号： | IRLMS1503TRHR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91508D
IRLMS1503
HEXFET® Power MOSFET
l Generation V Technology
l Micro6 Package Style
l Ultra Low RDS(on)
A
1
2
6
D
D
D
VDSS = 30V
5
D
l N-Channel MOSFET
3
4
G
S
RDS(on) = 0.10Ω
Description
Top View
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET® power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
idealforapplicationswhereprintedcircuitboardspace
isatapremium. It'suniquethermaldesignandRDS(on)
reduction enables a current-handling increase of
nearly 300% compared to the SOT-23.
Micro6
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
3.2
2.6
A
18
PD @TA = 25°C
Power Dissipation
1.7
13
W
mW/°C
V
Linear Derating Factor
VGS
Gate-to-Source Voltage
± 20
dv/dt
TJ,TSTG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
5.0
V/ns
°C
-55 to + 150
Thermal Resistance Ratings
Parameter
Min.
Typ.
Max
Units
RθJA
Maximum Junction-to-Ambient
75
°C/W
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1
3/17/04
IRLMS1503
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.037 V/°C Reference to 25°C, ID = 1mA
0.100
0.20
1.0
1.1
1.0
25
-100
100
6.4 9.6
1.1 1.7
1.9 2.8
4.6
4.4
10
2.0
210
90
32
VGS = 10V, ID = 2.2A
VGS = 4.5V, ID = 1.1A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 1.1A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
ID = 2.2A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC VDS = 24V
VGS = 10V, See Fig. 6 and 9
VDD = 15V
RiseTime
ID = 2.2A
ns
pF
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 6.0Ω
RD = 6.7Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
1.7
18
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
1.2
V
TJ = 25°C, IS = 2.2A, VGS = 0V
TJ = 25°C, IF = 2.2A
36
39
54
58
ns
nC
Qrr
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ISD ≤ 2.2A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS
,
Surface mounted on FR-4 board, t ≤ 5sec.
TJ ≤ 150°C
2
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IRLMS1503
100
10
1
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM3.0V
BOTTOM3.0V
3.0V
3.0V
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
°
°
T = 25 C
J
0.1
0.1
0.1
0.1
1
10
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
0.0
2.2A
=
I
D
°
T = 25 C
J
10
°
T = 150 C
J
1
V
= 10V
DS
20µs PULSE WIDTH
V
= 10V
GS
0.1
3.0
4.0
5.0
6.0 7.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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2
IRLMS1503
20
16
12
8
350
I
D
= 2.2A
V
= 0V,
f = 1MHz
gd , ds
GS
C
= C + C
C
SHORTED
iss
gs
V
V
= 24V
= 15V
C
= C
gd
DS
DS
300
250
200
150
100
50
rss
C
= C + C
ds
oss
gd
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 9
0
0
1
10
100
0
2
4
6
8
10
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
10
°
T = 150 C
J
°
T = 25 C
J
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.4
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRLMS1503
RD
VDS
Q
G
10V
VGS
D.U.T.
Q
Q
GD
GS
RG
+ VDD
-
V
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
V
DS
50KΩ
90%
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
10%
V
GS
V
GS
t
t
r
t
t
f
3mA
d(on)
d(off)
I
I
D
G
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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4
IRLMS1503
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
+
-
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 13. For N-channel HEXFET® power MOSFET s
6
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IRLMS1503
Package Outline
Micro6ä
LEAD ASSIGNMENTS
RECOMMENDED FOOTPRINT
3.00 (.118 )
2.80 (.111 )
-B-
2X 0.95 (.0375 )
D
D
S
1.75 (.068 )
1.50 (.060 )
6
1
5
2
4
3
6X (1.06 (.042 )
3.00 (.118 )
2.60 (.103 )
6
1
5
4
-A-
2.20 (.087 )
2
3
D
D
G
0.95 ( .0375 )
2X
0.50 (.019 )
6X
6X 0.65 (.025 )
0.35 (.014 )
0.15 (.006 ) M C A S B S
0O -10O
0.20 (.007 )
0.09 (.004 )
6X
1.30 (.051 )
0.90 (.036 )
1.45 (.057 )
0.90 (.036 )
-C-
0.10 (.004 )
SURFACES
0.15 (.006 )
MAX.
0.60 (.023 )
0.10 (.004 )
6
NOTES :
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : MILLIMETER.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
Part Marking Information
Micro6ä
Note: A line above the work week
(as shown here) indicates Lead-Free.
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6
IRLMS1503
Tape & Reel Information
Micro6ä
8mm
FEED DIRECTION
4mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
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TAC Fax: (310) 252-7903
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8
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