IRLMS1503TRPBF [INFINEON]
Generation V Technology; ?????第五代技术型号: | IRLMS1503TRPBF |
厂家: | Infineon |
描述: | Generation V Technology |
文件: | 总8页 (文件大小:156K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 95762
IRLMS1503PbF
HEXFET® Power MOSFET
l Generation V Technology
l Micro6 Package Style
l Ultra Low RDS(on)
l N-Channel MOSFET
l Lead-Free
A
1
2
6
D
D
D
VDSS = 30V
5
D
3
4
G
S
R
DS(on) = 0.10Ω
Description
Top View
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET® power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6™ package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
idealforapplicationswhereprintedcircuitboardspace
isatapremium. It'suniquethermaldesignandRDS(on)
reduction enables a current-handling increase of
nearly 300% compared to the SOT-23.
Micro6™
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
3.2
2.6
A
18
PD @TA = 25°C
Power Dissipation
1.7
13
W
mW/°C
V
Linear Derating Factor
VGS
Gate-to-Source Voltage
± 20
dv/dt
TJ,TSTG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
5.0
V/ns
°C
-55 to + 150
Thermal Resistance Ratings
Parameter
Min.
Typ.
Max
Units
RθJA
Maximum Junction-to-Ambient
75
°C/W
www.irf.com
1
1/14/05
IRLMS1503PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.037 V/°C Reference to 25°C, ID = 1mA
0.100
0.20
1.0
1.1
1.0
25
-100
100
6.4 9.6
1.1 1.7
1.9 2.8
4.6
4.4
10
2.0
210
90
32
VGS = 10V, ID = 2.2A
VGS = 4.5V, ID = 1.1A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 1.1A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
ID = 2.2A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
RiseTime
nC VDS = 24V
VGS = 10V, See Fig. 6 and 9
VDD = 15V
ID = 2.2A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 6.7Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = 25V
Reverse
Transfer
Capacitance
=
1.0MHz,
See
Fig.
5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
1.7
18
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode
Reverse Recovery Time
Reverse RecoveryCharge
Forward
Voltage
1.2V J = T25°C, IS = 2.2A, VGS = 0V
36
39
54
58
ns
TJ = 25°C, IF = 2.2A
Qrr
nC
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ISD ≤ 2.2A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS
,
Surface mounted on FR-4 board, t ≤ 5sec.
TJ ≤ 150°C
2
www.irf.com
IRLMS1503PbF
100
10
1
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM3.0V
BOTTOM3.0V
3.0V
3.0V
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
°
°
T = 25 C
J
0.1
0.1
0.1
0.1
1
10
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
0.0
2.2A
=
I
D
°
T = 25 C
J
10
°
T = 150 C
J
1
V
= 10V
DS
20µs PULSE WIDTH
V
=10V
GS
0.1
3.0
4.0
5.0
6.0 7.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
www.irf.com
3
IRLMS1503PbF
20
16
12
8
350
I
D
= 2.2A
V
= 0V,
f = 1MHz
gd , ds
GS
C
= C + C
C
SHORTED
iss
gs
V
V
= 24V
= 15V
DS
DS
C
= C
gd
300
250
200
150
100
50
rss
C
= C + C
ds
oss
gd
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE9
0
0
0
2
4
6
8
10
1
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
10
°
T = 150 C
J
°
T = 25 C
J
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
V
= 0 V
J
GS
0.1
0.4
0.1
0.6
V
0.8
1.0
1.2
1.4
1.6
1
10
100
,Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
www.irf.com
IRLMS1503PbF
RD
VDS
Q
G
10V
VGS
D.U.T.
Q
Q
GD
GS
RG
+ VDD
-
V
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
V
DS
50KΩ
90%
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
10%
V
GS
V
GS
t
t
r
t
t
f
3mA
d(on)
d(off)
I
I
D
G
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
P
2
DM
1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRLMS1503PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 13. For N-channel HEXFET® power MOSFET s
6
www.irf.com
IRLMS1503PbF
Micro6 (SOT23 6L) Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS
RECOMMENDED FOOTPRINT
3.00 (.118 )
-B-
2.80 (.111 )
2X 0.95 (.0375 )
D
D
S
1.75 (.068 )
1.50 (.060 )
6
1
5
2
4
3
6X (1.06 (.042 )
3.00 (.118 )
2.60 (.103 )
6
1
5
4
-A-
2.20 (.087 )
2
3
D
D
G
0.95 ( .0375 )
2X
0.50 (.019 )
6X
6X 0.65 (.025 )
0.35 (.014 )
0.15 (.006 ) M C A S B S
O
0O -10
0.20 (.007 )
6X
1.30 (.051 )
0.90 (.036 )
0.09 (.004 )
1.45 (.057 )
0.90 (.036 )
-C-
0.10 (.004 )
SURFACES
0.15 (.006 )
MAX.
0.60 (.023 )
0.10 (.004 )
6
NOTES :
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : MILLIMETER.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
Micro6 (SOT23 6L) Part Marking Information
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
WEEK
YEAR
Y
W
Y = YEAR
W = WEEK
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
PART NUMBER
LOT
CODE
TOP
24
25
26
X
Y
Z
PART NUMBER CODE REFERENCE:
A = IRLMS1902
B = IRLMS 1503
C = IRL MS 6702
D = IRLMS5703
E = IRLMS 6802
F = IRLMS4502
G = IRLMS2002
H = IRLMS6803
W = (27-52) IF PRECEDED BY A LETTER
WORK
YEAR
Y
WEEK
W
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
27
28
29
30
A
B
C
D
Note: A li ne above the wor k week
(as shown here) indicates Lead-Free.
K
50
51
52
X
Y
Z
www.irf.com
7
IRLMS1503PbF
Micro6 Tape & Reel Information
Dimensions are shown in milimeters (inches)
8mm
FEED DIRECTION
4mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/05
8
www.irf.com
相关型号:
IRLMS1902TR
Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6
INFINEON
IRLMS1902TRPBF
Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6
INFINEON
IRLMS2002TR
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6
INFINEON
IRLMS4502TR
Power Field-Effect Transistor, 5.5A I(D), 12V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6
INFINEON
©2020 ICPDF网 联系我们和版权申明