IRLMS4502TR [INFINEON]
Power Field-Effect Transistor, 5.5A I(D), 12V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6;
| 型号： | IRLMS4502TR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 5.5A I(D), 12V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 93759A
IRLMS4502
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
A
1
2
6
D
D
D
VDSS = -12V
5
D
l Available in Tape & Reel
3
4
G
S
RDS(on) = 0.042Ω
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications..
The Micro6 package with its customized leadframe
produces a HEXFET power MOSFET with Rds(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It'suniquethermaldesignandRDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
Micro6
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-12
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-5.5
-4.4
A
-44
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
1.7
W
Power Dissipation
1.1
Linear Derating Factor
0.013
28
W/°C
mJ
V
EAS
Single Pulse Avalanche Energy
Gate-to-Source Voltage
VGS
± 12
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
75
Units
°C/W
RθJA
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1
01/18/01
IRLMS4502
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-12 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.003 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.042
––– ––– 0.075
-0.60 ––– –––
8.8 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -4.5V, ID = -5.5A
GS = -2.5V, ID = -4.7A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
V
VGS(th)
gfs
Gate Threshold Voltage
V
S
VDS = VGS, ID = -250µA
VDS = -10V, ID = -5.5A
VDS = -12V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 125°C
VGS = -12V
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 12V
Qg
––– 22
––– 3.9 5.8
––– 11 16
33
ID = -5.5A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -10V
VGS = -5.0V
VDD = -6.0V
––– 18 –––
––– 460 –––
––– 130 –––
––– 250 –––
––– 1820 –––
––– 1110 –––
––– 1070 –––
ID = -1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 4.5Ω
RD = 6.0Ω
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
pF
VDS = -10V
Reverse Transfer Capacitance
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
–––
–––
-1.7
-44
–––
–––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
TJ = 25°C, IS = -1.7A, VGS = 0V
TJ = 25°C, IF = -5.5A
––– 31
––– 21
46
32
ns
Qrr
nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 1.8mH
RG = 25Ω, IAS = -5.5A. (See Figure 12)
2
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IRLMS4502
1000
100
10
100
10
1
VGS
VGS
TOP
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
TOP
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
BOTTOM-2.25V
-2.25V
-2.25V
20µs PULSE WIDTH
°
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
J
°
1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
-5.5A
=
I
D
1.5
1.0
0.5
0.0
100
°
T = 25 C
J
°
T = 150 C
J
V
= -15V
DS
20µs PULSE WIDTH
V
=-4.5V
GS
10
2.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
3.0
4.0
5.0 6.0
7.0
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLMS4502
2600
15
12
9
V
= 0V,
f = 1 MHZ
I
D
= -5.5A
GS
C
= C + C
,
C
ds
SHORTED
V
=-10V
iss
gs gd
DS
C
= C
rss
gd
C
= C + C
oss
ds gd
2200
1800
1400
1000
Ciss
6
Coss
Crss
3
0
1
10
100
0
10
20
30
40
Q
, Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
°
T = 150 C
J
°
T = 25 C
J
°
T = 25 C
C
J
°
T = 150 C
Single Pulse
10ms
V
= 0 V
GS
1.6
0.1
0.4
0.1
1
10
100
0.6
0.8
1.0
1.2
1.4
1.8
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRLMS4502
6.0
5.0
4.0
3.0
2.0
1.0
0.0
80
60
40
20
0
I
D
TOP
-2.5A
-4.4A
BOTTOM -5.5A
25
50
T
75
100
125
°
150
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
, Case Temperature ( C)
C
Fig 9. Maximum Drain Current Vs.
Fig 10. Maximum Avalanche Energy
Case Temperature
Vs. Drain Current
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
P
DM
1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLMS4502
Package Outline
Micro6
LEAD ASSIG NMEN TS
RECO MMENDED FO O TPR IN T
3.00 (.118 )
2.80 (.111 )
-B-
2X 0.95 (.0375
)
D
D
S
1.75 (.068
1.50 (.060
)
)
6
1
5
2
4
6X (1.06 (.042 )
3.00 (.118 )
2.60 (.103 )
6
1
5
4
-A -
2.20 (.087
)
3
2
3
D
G
D
0.95 ( .0375
2X
)
0.50 (.019
0.35 (.014
)
)
6X
6X 0.65 (.025 )
0.15 (.006 ) M
C
A
S
B S
0O -10O
0.20 (.007 )
0.09 (.004 )
6X
1.30 (.051
0.90 (.036
)
)
1.45 (.057
0.90 (.036
)
)
-C -
0.10 (.004 )
SUR F AC ES
0.15 (.006 )
M A X.
0.60 (.023
0.10 (.004
)
)
6
NO TES
1. D IM ENS IO NING
2. C O NTR OLLING D IM E NS IO N
:
&
TO LER ANC ING PER A NS I Y14.5M -1982.
M ILLIM ETER .
:
3. D IM ENS IO NS AR E S HO W N IN M ILLIM ETER S (INC HES).
Part Marking Information
Micro6
THIS IS AN IRLMS6702
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
YEAR
Y
WE EK
W
PART NUMBER
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
DATE
CODE
2C YW
TOP
24
25
26
X
Y
Z
WAF E R LOT
NUMBER CODE
XXXX
BOTTOM
PART NUMBER CODE REFERENCE:
2A = IRLMS 1902
2B = IRLMS 1503
2C = IRLMS 6702
2D = IRLMS 5703
2E = IRLMS 6802
2F = IRLMS 4502
2G = IRLMS 2002
2H = IRLMS 6803
WW = (27-52) IF PRECEDED BY A LETT ER
WORK
YEAR
Y
WE EK
W
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
27
28
29
30
A
B
C
D
DATE CODE EXAMPLES:
YWW = 9603 = 6C
YWW = 9632 = FF
K
50
51
52
X
Y
Z
6
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IRLMS4502
Tape & Reel Information
Micro6
8 m m
FEED DIRECT ION
4 m m
N O TE S
:
1 . O U TL IN E C O N FO R M S TO E IA -4 81
& E IA -54 1.
178.00
( 7.008 )
M AX.
9.90 ( .390 )
8.40 ( .331 )
NO TES:
1. C ON TRO LLIN G D IMENSIO N : M ILLIM ETER.
2. O UTLINE CO N FO RMS TO EIA-481 & EIA-541.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/01
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7
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