IRLR3705ZTRRPBF [INFINEON]
Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3;
| 型号： | IRLR3705ZTRRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：340K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95956A
IRLR3705ZPbF
IRLU3705ZPbF
HEXFET® Power MOSFET
Features
Logic Level
Advanced Process Technology
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
D
VDSS = 55V
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
RDS(on) = 8.0mΩ
G
Description
ID = 42A
ThisHEXFET® PowerMOSFETutilizesthelatest
processing techniques to achieve extremely low
on-resistancepersiliconarea.Additionalfeatures
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitiveavalancherating.Thesefeaturescombine
to make this design an extremely efficient and
reliabledeviceforuseinawidevarietyofapplications.
S
I-Pak
D-Pak
IRLU3705ZPbF
IRLR3705ZPbF
Absolute Maximum Ratings
Parameter
Max.
89
Units
(Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ T = 25°C
C
D
D
D
@ T = 100°C
C
63
A
(Package Limited)
@ T = 25°C
C
42
360
130
DM
P
@T = 25°C
Power Dissipation
C
W
D
Linear Derating Factor
Gate-to-Source Voltage
0.88
± 16
W/°C
V
V
GS
Single Pulse Avalanche Energy
EAS (Thermally limited)
110
190
mJ
Single Pulse Avalanche Energy Tested Value
Avalanche Current
E
AS (Tested )
IAR
See Fig.12a, 12b, 15, 16
A
Repetitive Avalanche Energy
Operating Junction and
EAR
mJ
T
J
-55 to + 175
T
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
Max.
1.14
40
Units
Junction-to-Case
RθJC
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Rθ
–––
°C/W
JA
RθJA
–––
110
HEXFET® isaregisteredtrademarkofInternationalRectifier.
www.irf.com
1
10/01/10
IRLR/U3705ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.053 ––– V/°C Reference to 25°C, ID = 1mA
Ω
m
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
–––
1.0
6.5
–––
–––
–––
–––
–––
–––
–––
8.0
11
VGS = 10V, ID = 42A
VGS = 5.0V, ID = 34A
VGS = 4.5V, ID = 21A
VDS = VGS, ID = 250µA
12
VGS(th)
gfs
Gate Threshold Voltage
3.0
–––
20
V
Forward Transconductance
Drain-to-Source Leakage Current
89
S
V
V
V
DS = 25V, ID = 42A
IDSS
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA
DS = 55V, VGS = 0V
250
200
DS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA VGS = 16V
GS = -16V
––– -200
V
Qg
Qgs
Qgd
td(on)
tr
44
13
66
ID = 42A
nC VDS = 44V
VGS = 5.0V
VDD = 28V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
–––
–––
–––
–––
–––
–––
–––
22
17
Rise Time
150
33
ID = 42A
Ω
RG = 4.2
td(off)
tf
Turn-Off Delay Time
ns
Fall Time
70
VGS = 5.0V
D
S
LD
Internal Drain Inductance
4.5
Between lead,
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
Ciss
Input Capacitance
––– 2900 –––
VGS = 0V
VDS = 25V
Coss
Output Capacitance
–––
–––
420
230
–––
–––
Crss
Reverse Transfer Capacitance
Output Capacitance
pF ƒ = 1.0MHz
Coss
––– 1550 –––
V
V
GS = 0V, VDS = 1.0V, ƒ = 1.0MHz
GS = 0V, VDS = 44V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
–––
320
500
–––
–––
Coss eff.
Effective Output Capacitance
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
Continuous Source Current
–––
–––
42
MOSFET symbol
S
(Body Diode)
A
showing the
I
Pulsed Source Current
–––
–––
360
integral reverse
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
21
1.3
42
28
V
T = 25°C, I = 42A, V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 42A, VDD = 28V
J F
rr
di/dt = 100A/µs
Q
14
nC
rr
t
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
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IRLR/U3705ZPbF
1000
100
10
1000
100
10
VGS
12V
VGS
12V
10V
8.0V
5.0V
4.5V
3.5V
3.0V
2.8V
TOP
TOP
10V
8.0V
5.0V
4.5V
3.5V
3.0V
2.8V
BOTTOM
BOTTOM
2.8V
2.8V
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 175°C
≤
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
100.0
10.0
100
T
= 25°C
T
= 25°C
J
J
80
60
40
20
0
T
= 175°C
J
T
= 175°C
J
V
= 15V
DS
≤ 60µs PULSE WIDTH
V
= 8.0V
DS
380µs PULSE WIDTH
1.0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
, Gate-to-Source Voltage (V)
0
10 20 30 40 50 60 70 80
Drain-to-Source Current (A)
V
GS
I
D,
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
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3
IRLR/U3705ZPbF
5000
12
10
8
V
C
= 0V,
f = 1 MHZ
GS
I
= 42A
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 44V
C
= C
DS
rss
gd
4000
3000
2000
1000
0
VDS= 28V
VDS= 11V
C
= C + C
oss
ds
gd
Ciss
6
4
2
Coss
Crss
0
0
20
40
60
80
100
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
10000
1000.0
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1000
100
10
100.0
10.0
1.0
T
= 175°C
J
100µsec
1msec
10msec
T
= 25°C
J
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, Source-to-Drain Voltage (V)
DC
0.1
0.1
1
10
, Drain-toSource Voltage (V)
DS
100
V
V
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRLR/U3705ZPbF
2.5
2.0
1.5
1.0
0.5
100
80
60
40
20
0
I
= 42A
D
LIMITED BY PACKAGE
V
= 10V
GS
25
50
75
100
125
150
175
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
T
, Junction Temperature (°C)
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs.Temperature
CaseTemperature
10
1
0.1
D = 0.50
0.20
0.10
R1
R1
R2
R2
Ri (°C/W) τi (sec)
0.6984 0.000465
τ
J τJ
τ
τ
Cτ
0.05
1 τ1
Ci= τi/Ri
τ
2τ2
0.4415 0.004358
0.02
0.01
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLR/U3705ZPbF
500
400
300
200
100
0
15V
I
D
TOP
5.3A
7.0A
42A
DRIVER
L
V
DS
BOTTOM
D.U.T
AS
R
+
-
G
V
DD
I
A
2
V0GVS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
2.5
2.0
1.5
1.0
0.5
0.0
GS
GD
I
I
I
= 250µA
= 150µA
= 50µA
D
D
D
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
0
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
1K
T
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
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IRLR/U3705ZPbF
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
0.05
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
120
100
80
60
40
20
0
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 1% Duty Cycle
= 42A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
vs.Temperature
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7
IRLR/U3705ZPbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
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IRLR/U3705ZPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WIT H AS S E MBLY
LOT CODE 1234
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 1 = 2001
WE E K 16
IRFR120
116A
ASSEMBLED ON WW 16, 2001
IN THE ASSEMBLY LINE "A"
12
34
LINE A
Note: "P" in assembly lineposition
AS S EMBL Y
LOT CODE
indicates "L ead-F ree"
"P" in assembly lineposition indicates
"L ead-F ree" qualification to the cons umer-level
PART NUMBER
DAT E CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
OR
IRFR120
12 34
P = DESIGNATES LEAD-FREE
PRODUCT QUALIFIED TOTHE
CONSUMER LEVEL (OPTIONAL)
AS S EMBL Y
LOT CODE
YEAR 1 = 2001
WE E K 16
A = AS S E MB L Y S I T E CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRLR/U3705ZPbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
WIT H AS S E MB LY
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 1 = 2001
WE E K 19
IRFU120
119A
78
LOT CODE 5678
ASSEMBLED ON WW19, 2001
IN THE ASSEMBLY LINE "A"
56
LINE A
AS S EMBL Y
LOT CODE
Note: "P" in assemblylineposition
indicates L ead-Free"
OR
PART NUMBER
DAT E CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56
78
YEAR 1 = 2001
AS S EMBLY
LOT CODE
WE E K 19
A= ASSEMBLY SITE CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
IRLR/U3705ZPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters
TR
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Coss eff. is a fixed capacitance that gives the same charging time
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.12mH
RG = 25Ω, IAS = 42A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
as Coss while VDS is rising from 0 to 80% VDSS
.
ꢀ
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994
Rθ is measured at TJ approximately 90°C
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/2010
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11
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