IRLU8713PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRLU8713PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总10页 (文件大小：333K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97067
IRLR8713PbF
IRLU8713PbF
HEXFET® Power MOSFET
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
VDSS RDS(on) max
Qg
4.8m:
25V
17.4nC
D
D
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
S
D
S
D
G
G
D-Pak
IRLR8713PbF
I-Pak
IRLU8713PbF
l Lead-Free
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
25
V
V
Gate-to-Source Voltage
± 20
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
100
I
I
I
@ TC = 25°C
D
D
72
@ TC = 100°C
A
410
81
DM
Maximum Power Dissipation
Maximum Power Dissipation
P
P
@TC = 25°C
W
D
D
@TC = 100°C
40
Linear Derating Factor
Operating Junction and
0.54
W/°C
°C
T
T
-55 to + 175
J
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
1.86
50
Units
RθJC
RθJA
RθJA
–––
–––
–––
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
°C/W
110
Notes through are on page 10
www.irf.com
1
12/7/05
IRLR/U8713PbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
25
–––
–––
V
VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ
RDS(on)
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
16
––– mV/°C Reference to 25°C, ID = 1mA
mΩ
3.8
5.0
4.8
6.3
VGS = 10V, ID = 21A
VGS = 4.5V, ID = 17A
VDS = VGS, ID = 50µA
VGS(th)
Gate Threshold Voltage
1.35 1.85 2.35
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
79
-7.0
–––
–––
–––
––– mV/°C
1.0
150
100
µA
V
DS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA VGS = 20V
VGS = -20V
––– -100
gfs
–––
–––
26
S
VDS = 13V, ID = 17A
Qg
––– 17.4
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.0
2.2
5.8
5.4
8.0
8.6
0.9
14
–––
–––
–––
–––
–––
–––
1.6
VDS = 13V
nC VGS = 4.5V
D = 17A
I
See Fig.16
nC VDS = 10V, VGS = 0V
Gate Resistance
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
VDD = 13V, VGS = 4.5V
Rise Time
24
ID = 17A
Turn-Off Delay Time
12
ns Clamped Inductive Load
Fall Time
5.9
Ciss
Coss
Crss
Input Capacitance
––– 2240 –––
VGS = 0V
Output Capacitance
–––
–––
580
270
–––
–––
pF VDS = 13V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
–––
Max.
Units
mJ
EAS
IAR
190
17
Avalanche Current
A
Repetitive Avalanche Energy
EAR
8.1
mJ
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
D
S
100
IS
Continuous Source Current
–––
–––
MOSFET symbol
(Body Diode)
A
showing the
ISM
Pulsed Source Current
–––
–––
410
integral reverse
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
16
1.0
24
23
V
T = 25°C, I = 17A, V = 0V
GS
J
S
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 17A, VDD = 13V
J F
Qrr
ton
2
15
nC di/dt = 300A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRLR/U8713PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.7V
3.5V
3.0V
2.7V
2.5V
5.0V
4.5V
3.7V
3.5V
3.0V
2.7V
2.5V
BOTTOM
BOTTOM
1
2.5V
≤ 60µs PULSE WIDTH
Tj = 25°C
≤ 60µs PULSE WIDTH
Tj = 175°C
2.5V
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
2.0
1.5
1.0
0.5
I
= 42A
D
V
= 10V
GS
100
10
1
T
= 175°C
J
T
= 25°C
= 15V
J
V
DS
≤ 60µs PULSE WIDTH
0.1
1.0
2.0
3.0
4.0
5.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRLR/U8713PbF
10000
12
10
8
V
C
= 0V,
f = 1 MHZ
GS
I
= 17A
D
V
= 21V
= C + C , C SHORTED
iss
gs
gd ds
DS
VDS= 13V
C
= C
rss
gd
C
= C + C
oss
ds
gd
Ciss
6
1000
Coss
Crss
4
2
0
100
0
10
20
30
40
1
10
100
Q , Total Gate Charge (nC)
g
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
10msec
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
1.8
0.1
0.1
0.1
1
10
100
0.2
0.6
1.0
1.4
2.2
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRLR/U8713PbF
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100
80
60
40
20
0
LIMITED BY PACKAGE
I
= 50µA
D
25
50
75
100
125
150
175
-75 -50 -25
0
25 50 75 100 125 150 175
T
, Case Temperature (°C)
C
T , Temperature ( °C )
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Threshold Voltage Vs. Temperature
Case Temperature
10
1
D = 0.50
0.20
0.10
0.05
0.1
R1
R1
R2
R2
R3
R3
Ri (°C/W) τι (sec)
0.382809 0.000148
0.927748 0.0013
0.550944 0.009343
τ
J τJ
τ
τ
Cτ
0.02
0.01
τ
1 τ1
τ
2 τ2
3τ3
Ci= τi/Ri
0.01
0.001
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLR/U8713PbF
800
600
400
200
0
16
I
= 21A
I
D
D
TOP
7.1A
9.2A
17A
12
8
BOTTOM
T
T
= 125°C
= 25°C
J
4
J
0
2.0
4.0
6.0
8.0
10.0
25
50
75
100
125
150
175
V
, Gate-to-Source Voltage (V)
GS
Starting T , Junction Temperature (°C)
J
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
0.01Ω
t
p
I
AS
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
LD
VDS
VDS
90%
+
-
VDD
D.U.T
10%
VGS
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
6
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IRLR/U8713PbF
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 16b. Gate Charge Waveform
Fig 16a. Gate Charge Test Circuit
Driver Gate Drive
P.W.
Period
D =
D.U.T
Period
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
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7
IRLR/U8713PbF
D-Pak (TO-252AA) Package Outline
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WITH ASSEMBLY
LOT CODE 1234
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 9 = 1999
WEEK 16
IRFR120
916A
34
12
LINE A
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
OR
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
IRFR120
P916A
34
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 9 = 1999
12
ASSEMBLY
LOT CODE
WEEK 16
A= ASSEMBLY SITE CODE
8
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IRLR/U8713PbF
I-Pak (TO-251AA) Package Outline
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
INTERNATIONAL
RECTIFIER
LOGO
WIT H AS S E MBLY
LOT CODE 5678
ASSEMBLED ON WW 19, 1999
IN THE ASSEMBLY LINE "A"
DATE CODE
YEAR 9 = 1999
WE E K 19
IRFU120
919A
78
56
LINE A
ASSEMBLY
LOT CODE
Note: "P" in assembly line
pos ition indicates "Lead-Free"
OR
PART NUMBER
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56 78
YEAR 9 = 1999
AS S E MB L Y
LOT CODE
WE E K 19
A = AS S E MB LY S IT E CODE
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9
IRLR/U8713PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Calculated continuous current based on maximum allowable
Repetitive rating; pulse width limited by
max. junction temperature.
junction temperature. Package limitation current is 42A.
Starting TJ = 25°C, L = 0.77mH, RG = 25Ω,
IAS = 17A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ꢀ When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994.
Rθ is measured at TJ approximately at 90°C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/05
10
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