IRSF3031S 概述
Register Based Peripheral Driver, PDSO4
IRSF3031S 数据手册
通过下载IRSF3031S数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Data Sheet No. PD 60069-H
IRSF3031 (NOTE: For new designs, we
recommend IR’s new products IPS021 and IPS021L)
FULLY PROTECTED POWER MOSFET SWITCH
Features
· Controlled slew rate reduces EMI
· Over temperature protection
· Over current protection
Product Summary
V
50 V
ds(clamp)
· Active drain-to-source clamp
· ESD protection
· Lead compatible with standard Power MOSFET
· Low operating input current
· Monolithic construction
R
200 mW
4 A
165oC
ds(on)
I
ds(sd)
T
j(sd)
· Dual set/reset threshold input
E
200 mJ
AS
Description
The IRSF3031 is a three-terminal monolithic Smart Power
MOSFET with built-in short circuit, over-temperature, ESD and
over-voltage protections and dual set/reset input threshold .
Applications
· Solenoid Driver
· DC Motor Driver
The on-chip protection circuit latches off the Power MOSFET
in case the drain current exceeds 4A (typical) or the junction
temperature exceeds 165oC (typical) and keeps it off until the
input is driven below the Reset Threshold voltage.
· Programmable Logic Controller
AvailablePackages
The drain to source voltage is actively clamped at 55V prior to
the avalanche of the Power MOSFET, thus improving its perfor-
mance during turn-off with inductive loads.
The input requirements are very low (100µA typical) which
makes the IRSF3031 compatible with most existing designs
based on standard power MOSFETs.
3 Lead
SOT-223
3 Lead
TO220AB
BlockDiagram
Drain
DRAIN
Bias & Ref
+
-
Input
INPUT
3.5V
+
-
S
R
Q
Q
1V
+
-
Vref
-
+
Tj
Ground
Isolation
Source
SOURCE
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1
IRSF3031
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc =
25oC unless otherwise specified.)
Symbol Parameter
Min. Max. Units Test Conditions
V
V
I
Continuous drain to source voltage
Continuous input voltage
Continuous drain current
Power dissipation
—
-0.3
—
50
10
ds, max
in, max
V
self limited
30
A
W
ds
P
—
T £ 25oC, TO220
c
d
—
3.0
W
T £ 25oC, SOT223
c
E
V
V
T
T
T
Unclamped single pulse inductive energy➁
Electrostatic discharge voltage (Human Body Model)
Electrostatic discharge voltage (Machine Model)
Operating junction temperature range
Storage temperature range
—
200
mJ
AS
—
4000
1000
150
100pF. 1.5kW
200pF, 0W
esd1
esd2
V
—
-55
-55
—
Jop
Stg
L
150
oC
Lead temperature (soldering, 10 seconds)
300
Static Electrical Characteristics
(Tc = 25oC unless otherwise specified.)
Symbol Parameter
Min. Typ. Max. Units Test Conditions
V
Drain to source clamp voltage
Drain to source on resistance
Drain to source leakage current
Input threshold voltage
50
—
—
2.5
0.5
—
—
9
56
155
—
65
200
250
4.0
1.5
300
400
—
V
I
= 2A
ds,clamp
ds(on)
ds
R
mW
m
A
V
V
V
V
V
V
= 5V, I = 2A
ds
in
I
= 40V, V = 0V
in
dss
ds
ds
ds
in
V
V
3.2
1.0
100
120
10
V
= 5V, I > 10mA
ds
set
reset
i,on
i,off
m
Input protection reset threshold voltage
Input supply current (normal operation)
Input supply current (protection mode)
Input clamp voltage
V
= 5V, I < 10 A
= 5V
= 5V
ds
m
I
I
A
m
A
in
V
V
V
V
I = 1mA
in
in, clamp
sd
Body-drain diode forward drop➂
—
1.5
—
I
= -2A, R = 1kW
ds in
Thermal Characteristics
Symbol Parameter
Min. Typ. Max. Units Test Conditions
oC/W TO-220AB
R
R
R
R
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
Thermal resistance, junction-to-case
Thermal resistance, junction-to-PCB ➀
—
—
—
—
—
—
—
—
4
thjc
thja
thjc
thja
60
40
60
oC/W SOT-223
NOTES:
① When mounted on a 1" square PCB (FR-4 or G10 material). For recommended footprint and soldering techniques, refer
to International Rectifier Application Note AN-994.
o
② EAS is tested with a constant current source of 6A applied for 700µS with Vin = 0V and starting Tj = 25 C.
③Input current must be limited to less than 5mA with a 1kW resistor in series with the input when the Body-Drain Diode is
forward biased.
2
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IRSF3031
Switching ElectricalCharacteristics
(VCC = 14V, resistive load (RL) = 10W , Rin= 100W . Specifications measured at TC= 25oC unless otherwise
specified.)
Symbol Parameter
Min. Typ. Max. Units Test Conditions
t
t
t
t
Turn-on delay time
Rise time
—
—
—
—
-6
-6
—
—
—
—
—
—
30
30
30
30
6
V = 2V to 5V, 50% to 90%
in
don
r
doff
V = 2V to 5V, 90% to 10%
in
m
s
Turn-off delay time
Fall time
Output positive slew rate
Output negative slew rate
V = 5V to 2V, 50% to 10%
in
V = 5V to 2V, 10% to 90%
in
r
SR
SR
V
V
= 2V to 5V, +dVds/dt
= 5V to 2V, -dVds/dt
in
in
m
V/ s
6
Protection Characteristics
(TC= 25oC unless otherwise specified.
Symbol Parameter
Min. Typ. Max. Units Test Conditions
I
T
Current limit
1.8
155
—
4
165
3
6
A
oC
V
m
s
A
Vin = 5V
Vin = 5V, Ids = 2A
ds(sd)
Over temperature shutdown threshold
Min. input voltage for over-temp function
Over current response time
Peak short circuit current
Protection reset time
—
—
—
—
—
—
j(sd)
protect
Iresp
peak
reset
Tresp
V
t
I
t
t
—
—
TBD
TBD
TBD
TBD
—
ms
Over-temperature response time
—
Lead Assignments
2(D)
(2)D
1
2
3
In
D
S
1 2 3
In D S
3 Lead - SOT223
3 Lead - TO220
IRSF3031L
IRSF3031
Part Number
3
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IRSF3031
Case Outline 3 Lead - SOT-223
IRGB X01-3032 00
4
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IRSF3031
Tape & Reel - SOT223
01-0028 05/01-0008 02
Case Outline 3 Lead - TO220
2
NOTES:
2X
IRGB01-302601
5
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IRSF3031
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2 Tel: (905) 453-2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 65 838 4630
IR TAIWAN: 16 Fl. Suite D..207, Sec.2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
9/98
6
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