ISC073N12LM6 [INFINEON]
This is a logic level 120 V MOSFET in SuperSO8 packaging with 7.3 mOhm on-resistance. ISC073N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.;
| 型号： | ISC073N12LM6 |
| 厂家： | 
Infineon |
| 描述： | This is a logic level 120 V MOSFET in SuperSO8 packaging with 7.3 mOhm on-resistance. ISC073N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family. |
| 文件： | 总11页 (文件大小：1251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISC073N12LM6
MOSFET
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
SuperSO8
5
8
6
7
7
Features
6
5
8
•ꢀN-channel,ꢀlogicꢀlevel
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)
•ꢀHighꢀavalancheꢀenergyꢀrating
4
3
1
2
2
•ꢀ175°Cꢀoperatingꢀtemperature
3
1
4
•ꢀOptimizedꢀforꢀhighꢀfrequencyꢀswitchingꢀandꢀsynchronousꢀrectification
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
•ꢀMSLꢀ1ꢀclassifiedꢀaccordingꢀtoꢀJ-STD-020
Drain
Pin 5-8
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
*1
Gate
Pin 4
Source
Pin 1-3
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
*1: Internal body diode
Parameter
Value
120
7.3
Unit
VDS
V
RDS(on),max
ID
mΩ
A
86
Qoss
52
nC
nC
nC
QGꢀ(0...4.5V)
Qrrꢀ(1000ꢀA/µs)
14.4
130
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
073N12L6
RelatedꢀLinks
ISC073N12LM6
PG-TDSON-8
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2022-12-13
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISC073N12LM6
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2022-12-13
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISC073N12LM6
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
-
-
86
61
52
13.4
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
Continuous drain current1)
ID
A
VGS=4.5ꢀV,ꢀTC=100ꢀ°C
VGS=10V,ꢀTA=25°C,RthJA=50°C/W2)
Pulsed drain current3)
ID,pulse
IAS
-
-
-
-
-
344
41
A
TA=25ꢀ°C
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
-
A
TC=25ꢀ°C
EAS
VGS
-
277
20
mJ
V
ID=12ꢀA,ꢀRGS=25ꢀΩ
-20
-
-
-
-
-
125
3.0
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRthJA=50ꢀ°C/W2)
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
-
-
-
-
1.2
°C/W -
°C/W -
°C/W -
Thermal resistance, junction - case,
top
-
-
20
50
Thermal resistance, junction - ambient,
6 cm² cooling area2)
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information.
4) See Diagram 13 for more detailed information.
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2022-12-13
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISC073N12LM6
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
120
1.2
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
VDS=VGS,ꢀID=50ꢀµA
1.7
2.2
-
-
0.1
10
1
100
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
IDSS
IGSS
µA
nA
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
-
6.2
8.1
11.7
7.3
9.9
-
VGS=10ꢀV,ꢀID=40ꢀA
mΩ VGS=4.5ꢀV,ꢀID=20ꢀA
VGS=3.3ꢀV,ꢀID=6.6ꢀA
Drain-source on-state resistance
RDS(on)
Gate resistance
RG
gfs
0.5
45
0.95
81
1.5
-
Ω
-
Transconductance
S
|VDS|≥2|ID|RDS(on)max,ꢀID=40ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
2000 2600 pF
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz
470
12
610
21
pF
pF
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
7
-
-
-
-
ns
ns
ns
ns
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=1.6ꢀΩ
3
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
18
5
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
5.6
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
7.3
4.3
7.2
-
Gate to source charge1)
Gate charge at threshold1)
Gate to drain charge1)
Switching charge
Gate charge total1)
Gate plateau voltage
Gate charge total1)
Output charge1)
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=60ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=60ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=60ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=60ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=60ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=60ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=60ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=60ꢀV,ꢀVGS=0ꢀV
Qg(th)
Qgd
3.4
4.8
Qsw
Qg
7
14.4
2.8
18
-
Vplateau
Qg
27
36
65
nC
nC
Qoss
52
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2022-12-13
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISC073N12LM6
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
86
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
344
1.0
44
A
TC=25ꢀ°C
Diode forward voltage
0.86
22
V
VGS=0ꢀV,ꢀIF=40ꢀA,ꢀTj=25ꢀ°C
VR=60ꢀV,ꢀIF=20ꢀA,ꢀdiF/dt=300ꢀA/µs
VR=60ꢀV,ꢀIF=20ꢀA,ꢀdiF/dt=300ꢀA/µs
VR=60ꢀV,ꢀIF=20ꢀA,ꢀdiF/dt=1000ꢀA/µs
VR=60ꢀV,ꢀIF=20ꢀA,ꢀdiF/dt=1000ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
Reverse recovery time1)
Reverse recovery charge1)
ns
nC
ns
nC
Qrr
trr
35
70
20
40
Qrr
130
260
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2022-12-13
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISC073N12LM6
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
140
100
120
100
80
60
40
20
0
80
60
40
20
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
102
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
1 µs
102
101
10 µs
101
100
10-1
10-2
10-3
100 µs
1 ms
10 ms
100
10-1
10-2
DC
100
101
102
103
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2022-12-13
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISC073N12LM6
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
350
20
300
3 V
10 V
16
3.3 V
250
5 V
4 V
12
8
4.5 V
4.5 V
200
150
100
50
5 V
10 V
4 V
4
3.3 V
3 V
2.8 V
0
0
0
1
2
3
4
5
0
25
50
75
100
125
150
175
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
200
20
16
25 °C
150
100
50
175 °C
12
175 °C
100 °C
8
25 °C
4
-55 °C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
2
4
6
8
10
12
14
16
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=40ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2022-12-13
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISC073N12LM6
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.4
2.4
2.0
1.6
1.2
0.8
0.4
0.0
2.0
500 µA
1.6
1.2
0.8
0.4
0.0
50 µA
-75 -50 -25
0
25 50 75 100 125 150 175 200
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=40ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
25 °C, max
175 °C
175 °C, max
103
102
101
100
Ciss
102
101
100
Coss
Crss
0
20
40
60
80
100
120
0.0
0.4
0.8
1.2
1.6
2.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2022-12-13
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISC073N12LM6
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
24 V
60 V
96 V
8
6
4
2
0
25 °C
101
100 °C
150 °C
100
10-1
10-1
100
101
102
103
0
4
8
12
16
20
24
28
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=20ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
132
130
128
126
124
122
120
118
116
114
112
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2022-12-13
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISC073N12LM6
5ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00003332
REVISION
08
MILLIMETERS
DIMENSION
MIN.
0.90
0.15
0.34
4.80
3.90
0.00
5.70
5.90
3.88
MAX.
1.20
0.35
0.54
5.35
4.40
0.22
6.10
6.42
4.31
SCALE 10:1
A
A1
b
3mm
0
1
2
D
D1
D2
E
EUROPEAN PROJECTION
E1
E2
e
1.27
L
0.45
0.45
0.71
0.69
ISSUE DATE
05.11.2019
M
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2022-12-13
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ120ꢀV
ISC073N12LM6
RevisionꢀHistory
ISC073N12LM6
Revision:ꢀ2022-12-13,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2022-12-13
Trademarks
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Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2022-12-13
相关型号：
ISC080N10NM6
正常电平 ISC080N10NM6 OptiMOS™ 6 系列 100 V 器件在分立式功率 MOSFET 领域树立了全新技术标准。相较于替代产品，英飞凌的领先薄晶圆技术显示出卓越性能优势。
INFINEON
ISC1008ER1R0M
General Fixed Inductor, 1 ELEMENT, 1 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD, CHIP, 1414, ROHS COMPLIANT
VISHAY
ISC1008ER220M
General Fixed Inductor, 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD, CHIP, 1414, ROHS COMPLIANT
VISHAY
ISC104N12LM6
This is a logic level 120 V MOSFET in SuperSO8 packaging with 10.4 mOhm on-resistance. ISC104N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
INFINEON
ISC1210100JB25
General Fixed Inductor, 1 ELEMENT, 10 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
VISHAY
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