ISP12DP06NM [INFINEON]
OptiMOS™ P-channel 60V MOSFETs in SOT-223 package is ideally suited for load switch, battery management as well as reverse polarity protection applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The products improve efficiency at low loads due to low Qg.and are available in normal and logic level featuring a wide RDS(on) range.;型号: | ISP12DP06NM |
厂家: | Infineon |
描述: | OptiMOS™ P-channel 60V MOSFETs in SOT-223 package is ideally suited for load switch, battery management as well as reverse polarity protection applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The products improve efficiency at low loads due to low Qg.and are available in normal and logic level featuring a wide RDS(on) range. 微控制器 |
文件: | 总11页 (文件大小:1203K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ISP12DP06NM
MOSFET
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
SOT-223-4
Features
4
•ꢀP-Channel
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀ100%ꢀavalancheꢀtested
•ꢀNormalꢀLevel
1
•ꢀEnhancementꢀmode
2
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
3
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Drain
Pin 2, 4
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Gate
Pin 1
Parameter
Value
Unit
Source
Pin 3
VDS
-60
V
RDS(on),max
ID
125
mΩ
A
-2.8
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
ISP12DP06NM
PG-SOT223
12DP06NM
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2019-03-26
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP12DP06NM
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2019-03-26
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP12DP06NM
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
VGS=-10ꢀV,ꢀTA=25ꢀ°C,
RTHJA=70ꢀ°C/W
Continuous drain current1)
Continuous drain current1)
ID
ID
-
-
-
-2.8
A
VGS=-10ꢀV,ꢀTA=100ꢀ°C,
RTHJA=70ꢀ°C/W
-
-1.7
A
Pulsed drain current2)
Avalanche energy, single pulse3)
ID,pulse
EAS
-
-
-
-
-11.2
652
20
A
TA=25ꢀ°C
-
mJ
V
ID=-2.8ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
-
-
-
-
-
4.2
1.8
TS=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRTHJA=70ꢀ°C/W1)
IEC climatic category; DIN IEC 68-1:
55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - soldering
point
RthJS
RthJA
-
-
-
25
°C/W -
°C/W -
Device on PCB,
-
70
6 cm² cooling area1)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2019-03-26
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP12DP06NM
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
-60
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
-
V
V
VGS=0ꢀV,ꢀID=-250ꢀµA
VDS=VGS,ꢀID=-520ꢀµA
-2.1
-3
-4
-
-
-0.1
-10
-1
-100
VDS=-60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=-60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
IDSS
µA
nA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IGSS
RDS(on)
RG
-
-
-
-
-10
100
5
-100
VGS=-20ꢀV,ꢀVDS=0ꢀV
125
mΩ VGS=-10ꢀV,ꢀID=-2.8ꢀA
-
-
Ω
-
Transconductance
gfs
5.2
S
|VDS|≥2|ID|RDS(on)max,ꢀID=-2.8ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
790
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
pF
pF
pF
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=-30ꢀV,ꢀf=1ꢀMHz
Output capacitance
120
Reverse transfer capacitance
30
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-2.8ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
8
-
-
-
-
ns
ns
ns
ns
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-2.8ꢀA,
RG,ext=1.6ꢀΩ
9
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-2.8ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
23
7
VDD=-30ꢀV,ꢀVGS=-10ꢀV,ꢀID=-2.8ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ
Values
Typ.
-3.5
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=-30ꢀV,ꢀID=-2.8ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-2.8ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-2.8ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-2.8ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-2.8ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀID=-2.8ꢀA,ꢀVGS=0ꢀtoꢀ-10ꢀV
VDD=-30ꢀV,ꢀVGS=0ꢀV
Qg(th)
Qgd
-2.4
-6.9
Qsw
-8.0
Gate charge total
Qg
-20.2
-4.4
Gate plateau voltage
Output charge
Vplateau
Qoss
-8.7
nC
1) See diagram ,Gate charge waveforms, for gate charge parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2019-03-26
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP12DP06NM
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
-1.5
-6
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
-
-
A
TA=25ꢀ°C
IS,pulse
VSD
trr
A
TA=25ꢀ°C
Diode forward voltage
-0.78 -1.2
V
VGS=0ꢀV,ꢀIF=-1.5ꢀA,ꢀTj=25ꢀ°C
VR=-30ꢀV,ꢀIF=-1.5ꢀA,ꢀdiF/dt=-100ꢀA/µs
VR=-30ꢀV,ꢀIF=-1.5ꢀA,ꢀdiF/dt=-100ꢀA/µs
Reverse recovery time
Reverse recovery charge
33
-
-
ns
nC
Qrr
-63
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2019-03-26
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP12DP06NM
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
2.0
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
1.5
1.0
0.5
0.0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
TA[°C]
TA[°C]
Ptot=f(TA)
ID=f(TA);ꢀ|VGS|≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
102
102
0.5
101
100
1 µs
0.2
101
1 ms
0.1
10 ms
0.05
0.02
100 ms
10-1
10-2
10-3
10-4
100
DC
0.01
10-1
single pulse
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
101
-VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTA=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJA=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2019-03-26
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP12DP06NM
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
24
200
-4.5 V
-7 V
-10 V -8 V
-5 V
-6 V
20
16
12
8
150
100
50
-6 V
-7 V
-8 V
-10 V
-5 V
4
-4.5 V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
-VDSꢀ[V]
-IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
12
300
10
8
250
200
150 °C
6
150
25 °C
4
100
150 °C
2
50
0
25 °C
0
0
1
2
3
4
5
6
7
5
6
7
8
9
10
-VGSꢀ[V]
-VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=-2.8ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2019-03-26
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP12DP06NM
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.0
3.6
1.6
1.2
0.8
0.4
0.0
3.2
2.8
2.4
2.0
-5200 µA
-520 µA
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=-2.8ꢀA,ꢀVGS=-10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
101
25 °C
25 °C, max
150 °C
150 °C, max
103
100
10-1
10-2
Ciss
Coss
102
Crss
101
0
10
20
30
40
50
60
0.00
0.25
0.50
0.75
1.00
1.25
1.50
-VDSꢀ[V]
-VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2019-03-26
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP12DP06NM
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
101
10
-12 V
-30 V
-48 V
8
6
4
2
0
25 °C
100
100 °C
125 °C
10-1
101
102
103
104
0
4
8
12
16
20
24
tAVꢀ[µs]
-Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=-2.8ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
68
66
64
62
60
58
56
-80
-40
0
40
80
120
160
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=-250ꢀµA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2019-03-26
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP12DP06NM
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-SOT223,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2019-03-26
OptiMOSTMꢀSmallꢀSignalꢀTransistor,ꢀ-60ꢀV
ISP12DP06NM
RevisionꢀHistory
ISP12DP06NM
Revision:ꢀ2019-03-26,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2019-03-26
Trademarks
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pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2019-03-26
相关型号:
ISP1301BS,115
IC LINE TRANSCEIVER, PQCC24, 4 X 4 MM, 0.85 MM HEIGHT, LEAD FREE AND HALOGEN FREE, PLASTIC, MO-220, SOT-616-1, HVQFN-24, Line Driver or Receiver
NXP
ISP1301BS,151
IC LINE TRANSCEIVER, PQCC24, 4 X 4 MM, 0.85 MM HEIGHT, LEAD FREE AND HALOGEN FREE, PLASTIC, MO-220, SOT-616-1, HVQFN-24, Line Driver or Receiver
NXP
ISP1301BS,157
IC LINE TRANSCEIVER, PQCC24, 4 X 4 MM, 0.85 MM HEIGHT, LEAD FREE AND HALOGEN FREE, PLASTIC, MO-220, SOT-616-1, HVQFN-24, Line Driver or Receiver
NXP
ISP1302HN,518
IC LINE TRANSCEIVER, PQCC24, 4 X 4 MM, 0.85 MM HEIGHT, PLASTIC, MO-220, SOT-616-3, VQFN-24, Line Driver or Receiver
NXP
ISP1302HN,551
IC LINE TRANSCEIVER, PQCC24, 4 X 4 MM, 0.85 MM HEIGHT, PLASTIC, MO-220, SOT-616-3, VQFN-24, Line Driver or Receiver
NXP
ISP1302HN,557
IC LINE TRANSCEIVER, PQCC24, 4 X 4 MM, 0.85 MM HEIGHT, PLASTIC, MO-220, SOT-616-3, VQFN-24, Line Driver or Receiver
NXP
ISP1302UK,023
IC LINE TRANSCEIVER, PBGA25, 2.50 X 2.50 MM, 0.60 MM HEIGHT, WLCSP-25, Line Driver or Receiver
NXP
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