ISZ019N03L5S [INFINEON]
凭借 OptiMOS™ 和 StrongIRFET™ 功率 MOSFET 系列产品组合，英飞凌可为所有客户提供合适的选择，满足不同需求。;
| 型号： | ISZ019N03L5S |
| 厂家： | 
Infineon |
| 描述： | 凭借 OptiMOS™ 和 StrongIRFET™ 功率 MOSFET 系列产品组合，英飞凌可为所有客户提供合适的选择，满足不同需求。 |
| 文件： | 总11页 (文件大小：1018K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISZ019N03L5S
MOSFET
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
TSDSON-8ꢀFL
(enlarged source interconnection)
Features
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀBuckꢀconverterꢀ(Server,VGA)
•ꢀVeryꢀLowꢀFOMQOSSꢀforꢀHighꢀFrequencyꢀSMPS
•ꢀLowꢀFOMSWꢀforꢀHighꢀFrequencyꢀSMPS
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)ꢀ@ꢀVGS=4.5ꢀV
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
S 1
S 2
S 3
G 4
8 D
7 D
Productꢀvalidation
QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard
6 D
5 D
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max
ID
1.9
40
mΩ
A
QOSS
25
nC
nC
QG(0V..10V)
44
Typeꢀ/ꢀOrderingꢀCode
Package
PG-TSDSON-8 FL
Marking
RelatedꢀLinks
ISZ019N03L5S
19N03L5
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2020-03-16
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
ISZ019N03L5S
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2020-03-16
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
ISZ019N03L5S
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
-
-
-
-
40
40
40
40
22
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=4.5ꢀV,ꢀTC=25ꢀ°C
VGS=4.5ꢀV,ꢀTC=100ꢀ°C
VGS=4.5ꢀV,ꢀTA=25ꢀ°C,ꢀRthJA=60ꢀK/W
Continuous drain current
ID
A
Pulsed drain current1)
ID,pulse
IAS
-
-
-
-
-
160
20
A
TC=25ꢀ°C
Avalanche current, single pulse2)
Avalanche energy, single pulse
Gate source voltage
-
A
TC=25ꢀ°C
EAS
VGS
-
150
20
mJ
V
ID=20ꢀA,ꢀRGS=25ꢀΩ
-20
-
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
1.8
K/W
K/W
-
-
Device on PCB,
-
-
60
6 cm2 cooling area3)
1) See figure 3 for more detailed information
2) See figure 13 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2020-03-16
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
ISZ019N03L5S
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
30
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
1.2
2
VDS=VGS,ꢀID=250ꢀµA
-
-
0.1
10
1
100
VDS=30ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=30ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
2.0
1.6
2.5
1.9
VGS=4.5ꢀV,ꢀID=20ꢀA
VGS=10ꢀV,ꢀID=20ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
-
0.8
-
-
Ω
-
Transconductance
70
140
S
|VDS|>2|ID|RDS(on)max,ꢀID=30ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
2800
960
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
-
-
-
pF
pF
pF
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz
Output capacitance
Reverse transfer capacitance
140
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
5.4
6.8
28
-
-
-
-
ns
ns
ns
ns
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
4.6
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ
Values
Typ.
7.0
4.6
6.5
9.0
22
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ4.5ꢀV
Qg(th)
Qgd
Qsw
Gate charge total
Qg
Gate plateau voltage
Gate charge total
Vplateau
Qg
2.5
44
nC
nC
nC
Gate charge total, sync. FET
Output charge
Qg(sync)
Qoss
18
25
VDD=15ꢀV,ꢀVGS=0ꢀV
1) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2020-03-16
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
ISZ019N03L5S
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
40
160
1
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
Qrr
-
A
TC=25ꢀ°C
Diode forward voltage
0.8
20
V
VGS=0ꢀV,ꢀIF=20ꢀA,ꢀTj=25ꢀ°C
VR=15ꢀV,ꢀIF=IS,ꢀdiF/dt=400ꢀA/µs
Reverse recovery charge
-
nC
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2020-03-16
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
ISZ019N03L5S
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
80
45
10V
40
35
30
25
20
15
10
5
70
60
50
40
30
20
10
0
4.5V
0
0
40
80
120
160
0
40
80
120
160
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀparameter:ꢀVGS
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
10 µs
100 µs
102
100
0.5
1 ms
10 ms
DC
0.2
0.1
101
0.05
10-1
0.02
0.01
100
single pulse
10-1
10-2
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2020-03-16
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
ISZ019N03L5S
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
400
4
5 V
4.5 V
4 V
10 V
350
300
250
200
150
100
50
3
3.2 V
3.5 V
3.5 V
4 V
4.5 V
2
5 V
3.2 V
7 V
8 V
10 V
3 V
1
2.5 V
0
0
0
1
2
3
0
10
20
30
40
50
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
200
300
180
160
140
120
100
80
250
200
150
100
50
60
40
25 °C
150 °C
20
0
0
0
1
2
3
4
5
0
40
80
120
160
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2020-03-16
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
ISZ019N03L5S
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
4
2.5
2.0
1.5
1.0
0.5
0.0
3
2
typ
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=30ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀID=250ꢀµA
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
150 °C
Ciss
Coss
103
102
101
102
101
100
Crss
0
5
10
15
20
25
30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2020-03-16
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
ISZ019N03L5S
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
12
15 V
10
8
6 V
24 V
25 °C
100 °C
101
6
125 °C
4
2
100
0
100
101
102
103
0
10
20
30
40
50
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=30ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
34
32
30
28
26
24
22
20
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2020-03-16
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
ISZ019N03L5S
5ꢀꢀꢀꢀꢀPackageꢀOutlines
m
j
DOCUMENT NO.
Z8B00158553
MILLIMETERS
DIMENSIONS
REVISION
MIN.
0.90
0
MAX.
1.10
0.05
0.44
03
A
A1
b
SCALE
10:1
0.24
c
(0.20)
D
3.20
2.19
1.54
3.20
2.01
0.10
3.40
2.39
1.74
3.40
2.21
0.30
2 mm
0
1
D1
D2
E
EUROPEAN PROJECTION
E1
E2
e
0.65
0.06
L
0.30
0.40
0.50
0.50
0.70
0.70
L1
L2
aaa
ISSUE DATE
04.03.2020
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TSDSON-8ꢀFL,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2020-03-16
OptiMOSTMꢀPower-MOSFET,ꢀ30ꢀV
ISZ019N03L5S
RevisionꢀHistory
ISZ019N03L5S
Revision:ꢀ2020-03-16,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2020-03-16
Trademarks
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Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2020-03-16
相关型号：
ISZ034N06LM5
OptiMOS™ 5 60 V 功率 MOSFETISZ034N06LM5 完全适用于开关电源 (SMPS) 这类高效率与功率密度解决方案中的同步整流、电信砖模块、服务器应用以及便携式充电器。器件占板面积仅为 3.3x3.3 mm，电气性能出色，有助于实现同类最佳的功率密度，可进一步改善终端应用中的产品外形尺寸。
INFINEON
ISZ0602NLS
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. ISZ0602NLS in the PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.
INFINEON
ISZ0702NLS
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.
INFINEON
ISZ0703NLS
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.
INFINEON
ISZ106N12LM6
This is a logic level 120 V MOSFET in PQFN 3.3 x 3.3 packaging with 10.6 mOhm on-resistance. ISZ106N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
INFINEON
ISZ230N10NM6
正常电平 ISZ230N10NM6 OptiMOS™ 6 系列 100 V 器件在分立式功率 MOSFET 领域树立了全新技术标准。相较于替代产品，英飞凌的领先薄晶圆技术显示出卓越性能优势。
INFINEON
ISZ330N12LM6
This is a logic level 120 V MOSFET in PQFN 3.3 x 3.3 packaging with 33 mOhm on-resistance. ISZ330N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
INFINEON
ISZ56DP15LM
OptiMOS™ P-channel MOSFETs 150 V in PQFN 3.3x3.3 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.
INFINEON
ISZ810P06LM
OptiMOS™ P-channel MOSFETs 60 V in PQFN 3.3x3.3 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.
INFINEON
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