JANSR2N7468U2A [INFINEON]
Rad hard, 60V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad TID, QPL;
| 型号： | JANSR2N7468U2A |
| 厂家： | 
Infineon |
| 描述： | Rad hard, 60V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad TID, QPL |
| 文件： | 总8页 (文件大小：1229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97922A
IRHNS57064
JANSR2N7468U2A
60V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SupIR-SMD)
REF: MIL-PRF-19500/673
TECHNOLOGY
R
5
Product Summary
Part Number
IRHNS57064
IRHNS53064
IRHNS55064
Radiation Level RDS(on)
ID
QPL Part Number
JANSR2N7468U2A
JANSF2N7468U2A
JANSG2N7468U2A
100 kRads(Si)
300 kRads(Si)
500 kRads(Si)
75A*
75A*
75A*
5.6m
5.6m
5.6m
SupIR-SMD
Description
Features
IR HiRel R5 technology provides high performance
power MOSFETs for space applications. These devices
have been characterized for both Total Dose and Single
Event Effect (SEE) with useful performance up to LET of
80 (MeV/(mg/cm2). The combination of low RDS(on) and
low gate charge reduces the power losses in switching
applications such as DC-DC converters and motor
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Light Weight
Surface Mount
controllers.
These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
ESD Rating: Class 3B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Symbol
Value
75*
Parameter
Units
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current
A
75*
IDM @TC = 25°C
PD @TC = 25°C
Pulsed Drain Current
300
250
Maximum Power Dissipation
W
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
2.0
± 20
500
75
W/°C
V
VGS
EAS
IAR
mJ
A
EAR
dv/dt
TJ
25
mJ
V/ns
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
4.4
-55 to + 150
TSTG
°C
g
300 (for 5s)
3.3 (Typical)
Weight
* Current is limited by package
For Footnotes, refer to the page 2.
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2020-04-13
International Rectifier HiRel Products, Inc.
IRHNS57064
JANSR2N7468U2A
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BVDSS
Parameter
Min. Typ. Max. Units
Test Conditions
VGS = 0V, ID = 1.0mA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
60
––– –––
V
BVDSS/TJ
RDS(on)
––– 0.065 –––
V/°C Reference to 25°C, ID = 1.0mA
––– –––
5.6
4.0
VGS = 12V, ID2 = 75A
m
V
VGS(th)
2.0
45
–––
VDS = VGS, ID = 1.0mA
VDS = 15V, ID2 = 75A
VDS = 48V, VGS = 0V
VDS = 48V,VGS = 0V,TJ =125°C
VGS = 20V
Gfs
IDSS
Forward Transconductance
––– –––
S
––– –––
––– –––
––– ––– 100
––– ––– -100
––– ––– 165
10
25
Zero Gate Voltage Drain Current
µA
nA
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
VGS = -20V
ID = 45A
QG
QGS
QGD
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– –––
––– –––
––– –––
––– ––– 125
––– –––
––– –––
55
65
35
nC
ns
VDS = 30V
VGS = 12V
VDD = 30V
ID = 45A
td(off)
tf
69
50
RG = 2.35
VGS = 12V
Measured from center of Drain
pad to center of Source pad
Ls +LD
Total Inductance
–––
4.0
–––
nH
pF
Ciss
Coss
Crss
Input Capacitance
––– 6080 –––
––– 2310 –––
–––
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
90
–––
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Min. Typ. Max. Units
Test Conditions
IS
––– ––– 75*
A
ISM
––– ––– 300
VSD
trr
––– –––
1.3
V
TJ=25°C, IS= 75A, VGS=0V
TJ=25°C, IF = 45A,VDD ≤ 25V
di/dt = 100A/µs
Reverse Recovery Time
––– ––– 200
––– ––– 538
ns
nC
Qrr
Reverse Recovery Charge
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ton
Forward Turn-On Time
* Current is limited by package
Thermal Resistance
Symbol
Parameter
Min.
Typ.
Max.
Units
Junction-to-Case
–––
–––
0.5
RJC
°C/W
Junction-to-PC Board (Soldered to 2” sq copper clad board)
–––
1.6
–––
RJ-PCB
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L = 0.18mH, Peak IL = 75A, VGS = 12V
ISD 45A, di/dt 196A/µs, VDD 60V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
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International Rectifier HiRel Products, Inc.
IRHNS57064
JANSR2N7468U2A
Radiation Characteristics
IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Upto500kRads(Si)1
Symbol
Parameter
Units
Test Conditions
Min.
60
Max.
–––
4.0
BVDSS
VGS(th)
IGSS
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
V
VGS = 0V, ID = 1.0mA
VDS = VGS, ID = 1.0mA
VGS = 20V
2.0
V
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
–––
–––
–––
100
-100
10
nA
nA
µA
IGSS
VGS = -20V
IDSS
VDS = 48V, VGS = 0V
Static Drain-to-Source
On-State Resistance (TO-3)
RDS(on)
–––
6.1
VGS = 12V, ID = 45A
m
Static Drain-to-Source
On-State Resistance (SupIR-SMD)
RDS(on)
VSD
–––
–––
5.6
1.3
VGS = 12V, ID = 45A
VGS = 0V, ID = 75A
m
Diode Forward Voltage
V
1. Part numbers IRHNS57064 (JANSR2N7468U2A), IRHNS53064 (JANSF2N7468U2A) and
IRHNS55064 (JANSG2N7468U2A)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
VDS (V)
LET
Energy
(MeV)
Range
(µm)
(MeV/(mg/cm2))
@ VGS = 0V @ VGS=-5V @ VGS=-10V @ VGS =-15V @ VGS=-20V
38 ± 5%
61 ± 5%
84 ± 5%
300 ± 7.5%
330 ± 7.5%
350 ± 10%
38 ± 7.5%
31 ± 10%
28 ± 7.5%
60
46
35
60
46
30
60
35
25
60
25
20
30
15
14
70
60
50
40
30
20
10
0
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
0
-5
-10
Bias VGS (V)
-15
-20
Fig a. Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
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2020-04-13
International Rectifier HiRel Products, Inc.
IRHNS57064
JANSR2N7468U2A
Pre-Irradiation
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
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International Rectifier HiRel Products, Inc.
IRHNS57064
JANSR2N7468U2A
Pre-Irradiation
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
International Rectifier HiRel Products, Inc.
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2020-04-13
IRHNS57064
JANSR2N7468U2A
Pre-Irradiation
V
(BR)DSS
t
p
I
AS
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Wave-
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
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International Rectifier HiRel Products, Inc.
IRHNS57064
JANSR2N7468U2A
Note: For the most updated package outline, please see the website: SupIR-SMD
Case Outline and Dimensions - SupIR-SMD
REV.
E
DESCRIPTION
ECN
DATE
4-3-20
INITIAL RELEASE
1120_ER6904
.003
6.60 [.260]
MAX.
.43 [.017]
.33 [.013]
13.61 [.536]
13.31 [.524]
12.83 [.505]
12.57 [.495]
.51 [.020]
.25 [.010]
.889 [.035]
.635 [.025]
4xR
2.11 [.083]
1.85 [.073]
9.02 [.355]
8.76 [.345]
11.05 [.435]
10.80 [.425]
13.61 [.536]
13.31 [.524]
6.60 [.260]
6.35 [.250]
0.61 [.024]
0.51 [.020]
1
18.03 [.710]
REF.
3.30 [.130]
3.05 [.120]
R 0.5 [0.02]
.38 [.015]
.13 [.005]
3.68 [.145]
3.18 [.125]
4.83 [.190]
4.32 [.170]
1.02 [.040]
MIN.
1.65 [.065]
1.40 [.055]
4° MAX.
2
3
.43 [.017]
.33 [.013]
1.27 [.050]
1.02 [.040]
2.03 [.080]
1.78 [.070]
5.21 [.205]
4.95 [.195]
3.43 [.135]
3.18 [.125]
1.40 [.055]
1.14 [.045]
PAD ASSIGNMENT
1 = DRAIN
2 = GATE
.127 [.005] TYP.
.91 [.036] MIN.
2.16 [.085]
1.91 [.075]
3 = SOURCE
.91 [.036] MIN.
NOTES:
1. FOR REFERENCE ONLY: LEAD LENGTH AFTER TIE-BAR
CUT MUST .300 ±.015 FROM THE FROM PACKAGE BODY.
2. BEND AND TRIM LEADS USING EQUIPMENT ASSET #03493.
.76 [.030] MIN.
IN BETWEEN
METALIZATION
3. STANDARD FINAL FINISH ON ALL TERMINALS IS SOLDER ALLOY 63%Sn 37%Pb.
www.infineon.com/irhirel
Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555
Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
San Jose, California 95134, USA Tel: +1 (408) 434-5000
Data and specifications subject to change without notice.
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2020-04-13
International Rectifier HiRel Products, Inc.
IRHNS57064
JANSR2N7468U2A
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/irhirel)
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
8
2020-04-13
International Rectifier HiRel Products, Inc.
相关型号：
JANSR2N7468U2L
Rad hard, 60V, 75A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL
INFINEON
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