JANTXV2N6758 [INFINEON]
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9A); 功率MOSFET N沟道（ BVDSS = 200V ， RDS（ON） = 0.40ohm ，ID = 9A）
| 型号： | JANTXV2N6758 |
| 厂家： | 
Infineon |
| 描述： | POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9A) |
| 文件： | 总6页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Provisional Data Sheet No. PD-9.334E
JANTX2N6758
JANTXV2N6758
[REF:MIL-PRF-19500/542]
HEXFET® POWER MOSFET
[GENERIC:IRF230]
N-CHANNEL
200 Volt, 0.40Ω HEXFET
Product Summary
Part Number
JANTX2N6758
JANTXV2N6758
BVDSS
RDS(on)
ID
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
200V
9A
0.40Ω
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
Features:
■ Avalanche Energy Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
Absolute Maximum Ratings
Parameter
JANTX2N6758, JANTXV2N6758 Units
I
D
@ V
= 10V, T = 25°C Continuous Drain Current
9
GS
C
A
I
@ V
= 10V, T = 100°C Continuous Drain Current
6
36
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
75
W
W/K ➄
V
D
C
0.60
±20
54
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
GS
E
mJ
AS
AR
I
9
A
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
7.5
mJ
AR
dv/dt
5.0
V/ns
T
-55 to 150
J
oC
g
T
Storage Temperature Range
Lead Temperature
STG
(0.063 in. (1.6mm) from
300
case for 10.5 seconds)
11.5 (typical)
Weight
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JANTX2N6758, JANTXV2N6758 Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min. Typ. Max. Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
200
—
—
—
—
V
V
= 0V, I = 1.0 mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0 mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.29
DSS
J
D
Voltage
➃
= 10V, I = 6.0A
GS D
R
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
ForwardTransconductance
Zero Gate Voltage Drain Current
—
—
2.0
3.0
—
—
—
—
—
—
—
0.40
0.49
4.0
—
25
V
DS(on)
Ω
V
S ( )
V
= 10V, I = 9.0A
GS D
V
g
V
= V , I = 250µA
GS(th)
fs
DS
GS
D
Ω
V
> 15V, I
= 6.0A ➃
DS
DS
I
V
= 0.8 x Max Rating,V = 0V
DSS
DS
GS
µA
—
250
V
= 0.8 x Max Rating
DS
V
= 0V, T = 125°C
GS
J
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
16
3.0
8.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
100
-100
39
5.7
20
35
80
60
40
V
= 20V
GS
GSS
nA
nC
I
V
= -20V
GSS
GS
Q
Q
Q
V
= 10V, I = 9.0A
= Max. Rating x 0.5
see figures 6 and 13
g
gs
gd
GS
D
V
DS
t
V
= 100V, I = 9.0A,
d(on)
DD D
t
R
G
= 7.5Ω, VGS= 10V
r
ns
t
d(off)
t
L
see figure 10
f
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Modified MOSFET
symbol showing the
internal inductances.
—
D
S
nH
pF
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
L
Internal Source Inductance
—
13.0
—
C
C
C
Input Capacitance
Output Capacitance
ReverseTransfer Capacitance
—
—
—
600
250
80
—
—
—
V
= 0V, V
f = 1.0 MHz
see figure 5
= 25V
DS
iss
oss
rss
GS
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
—
—
—
—
9
36
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
S
SM
A
V
t
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.4
500
6.0
V
ns
µC
T = 25°C, I = 9.0A, V
= 0V ➃
j
SD
rr
RR
S
GS
T = 25°C, I = 9.0A, di/dt ≤ 100A/µs
j
F
V
≤ 50V ➃
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min. Typ. Max. Units
Test Conditions
R
R
Junction-to-Case
—
—
1.67
thJC
thJA
Junction-to-Ambient
—
—
30
K/W
Typical socket mount
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JANTX2N6758, JANTXV2N6758 Device
Fig. 1 — Typical Output Characteristics
TC = 25°C
Fig. 2 — Typical Output Characteristics
TC = 150°C
Fig. 3 — Typical Transfer Characteristics
Fig. 4 — Normalized On-Resistance Vs.Temperature
Fig. 5 — Typical Capacitance Vs. Drain-to-Source
Voltage
Fig. 6 — Typical Gate Charge Vs. Gate-to-Source
Voltage
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JANTX2N6758, JANTXV2N6758 Device
Fig. 7 — Typical Source-to-Drain Diode Forward
Voltage
Fig. 8 — Maximum Safe Operating Area
Fig. 9 — Maximum Drain Current Vs. Case Temperature
Fig. 10b — Switching Time Waveforms
Fig. 10a — Switching Time Test Circuit
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JANTX2N6758, JANTXV2N6758 Device
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
Fig. 12b — Unclamped Inductive Waveforms
Fig. 12a — Unclamped Inductive Test Circuit
Fig. 12c — Max. Avalanche Energy vs. Current
Fig. 13a — Gate Charge Test Circuit
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JANTX2N6758, JANTXV2N6758 Device
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
(see figure 11)
➁ @ V
= 50V, Starting T = 25°C,
J
DD
= [0.5
2
E
L
(I ) [BV
/(BV
-V )]
DSS DD
AS
*
*
*
DSS
L
Peak I = 9A, V
= 10V, 25 ≤ R ≤ 200Ω
L
GS
G
➂ I
SD
≤ 9A, di/dt ≤ 120A/µs,
V
≤ BV
, T ≤ 150°C
DSS J
DD
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ K/W = °C/W
W/K = W/°C
Fig. 13b — Basic Gate Charge Waveform
Case Outline and Dimensions — TO-204AA(Modified TO-3)
All dimensions are shown millimeters (inches)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
10/96
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