KSY14 [INFINEON]

Hall Sensor; 霍尔传感器
KSY14
型号: KSY14
厂家: Infineon    Infineon
描述:

Hall Sensor
霍尔传感器

传感器
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Hall Sensor  
KSY 14  
Features  
• High sensitivity  
• High operating temperature  
• Small linearity error  
• Low offset voltage  
• Low TC of sensitivity and  
internal resistance  
• Ultra-flat plastic miniature  
package  
• Low inductive zero component  
• Package thickness 0.7 mm  
• Connections from one side of  
the package  
Typical applications  
• Current and power  
measurement  
• Magnetic field measurement  
• Control of brushless DC motors  
• Rotation and position sensing  
• Measurement of diaphragm  
• Movement for pressure  
sensing  
Dimensions in mm  
Type  
Marking  
Ordering Code  
KSY 14  
14  
Q62705-K227  
The KSY 14 is an ion-implanted Hall sensor generator in a mono-crystalline GaAs  
material, built into an extremely flat plastic package (SOH). It is outstanding for a high  
magnetic sensitivity and low temperature coefficients. The 0.35 × 0.35 mm2 chip is  
mounted onto a non-magnetic leadframe.  
Semiconductor Group  
1
07.96  
KSY 14  
Maximum ratings  
Parameter  
Symbol  
Value  
Unit  
°C  
Operating temperature  
Storage temperature  
Supply current  
TA  
Tstg  
I1  
– 40+ 175  
– 50+ 180  
7
°C  
mA  
Thermal conductivity  
soldered, in air  
GthA  
GthC  
1.5  
2.2  
mW/K  
mW/K  
Characteristics (TA = 25 °C)  
Nominal supply current  
Open-circuit sensitivity  
I1N  
5
mA  
KB0  
V20  
190260  
95130  
V/AT  
mV  
Open-circuit Hall voltage  
I1 = I1N, B = 0.1 T  
Ohmic offset voltage  
I1 = I1N, B = 0 T  
≤ ± 20  
mV  
VR0  
FL  
Linearity of Hall voltage  
B = 00.5 T  
B = 01 T  
≤ ± 0.2  
≤ ± 0.7  
%
%
Input resistance  
B = 0 T  
B = 0 T  
R10  
9001200  
Output resistance  
R20  
9001200  
Temperature coefficient of the  
open-circuit Hall voltage  
I1 = I1N, B = 0.1 T  
TCV20  
– 0.03– 0.07  
%/K  
Temperature coefficient of the internal TCR10, R20  
0.10.18  
%/K  
resistance  
B = 0 T  
1)  
Change of offset voltage within the  
temperature range  
VR0  
2  
0.16  
10  
mV  
cm2  
dB  
2)  
Inductive zero component  
A2  
I1N = 0  
Noise figure  
F
1) AQL: 0.65  
2) With time varying induction there exists an inductive voltage Vind between the Hall voltage terminals (supply  
current I1 = 0):  
-4  
2
Vind = A2 × dB/dt × 10 with V(V), A2 (cm ), B(T), t(s)  
Semiconductor Group  
2
KSY 14  
Connection of a Hall sensor with a power source  
Since the voltage on the component must not exceed 10 V, the connection to the  
constant current supply should only be done via a short circuit by-pass. The by-pass  
circuit-breaker shall not be opened before turning on the power source, in order to avoid  
damage to the Hall sensor due to power peaks.  
Polarity of Hall voltage  
Semiconductor Group  
3

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