PTF080601A [INFINEON]
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz; LDMOS射频功率场效应晶体管60 W， 860-960兆赫
| 型号： | PTF080601A |
| 厂家： | 
INFINEON TECHNOLOGIES AG |
| 描述： | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz |
| 文件： | 总6页 (文件大小：293K) |
| 下载： | 下载PDF数据表文档文件 |
PTF080601E
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHzWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
15
INFINEON
PTF080601EF-DS1
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHzWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
21
INFINEON
PTF080601F
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHzWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
10
INFINEON
PTF080901
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHzWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
34
INFINEON
PTF080901
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHzWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
29
INFINEON
PTF080901E
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHzWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
76
INFINEON
PTF080901E
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 30248, 2 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
1
INFINEON
PTF080901EF_DS2A
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHzWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
29
INFINEON
PTF080901F
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHzWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
27
INFINEON
PTF080901F
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 31248, 2 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
PTF081301E
Thermally-Enhanced High Power RF LDMOS FETs 130W,869-960MHzWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
28
INFINEON
PTF081301E
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHzWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
25
INFINEON
PTF081301E
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 30248, 2 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
PTF081301EF-03
Thermally-Enhanced High Power RF LDMOS FETs 130W,869-960MHzWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
11
INFINEON
PTF081301F
Thermally-Enhanced High Power RF LDMOS FETs 130W,869-960MHzWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
10
INFINEON
©2020 ICPDF网 联系我们和版权申明