PTF080601EF-DS1 [INFINEON]
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz; LDMOS射频功率场效应晶体管90 W， 869-960兆赫
| 型号： | PTF080601EF-DS1 |
| 厂家： | 
Infineon |
| 描述： | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| 文件： | 总10页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTF080601E
PTF080601F
Thermally-Enhanced High Power RF LDMOS FETs
60 W, 860 – 960 MHz
Description
PTF080601E
Package 30265
The PTF080601E and PTF080601F are 60-watt, internally-matched
GOLDMOS FETs intended for EDGE and CDMA applications in the 860 to
960 MHz band. Thermally-enhanced packaging provides the coolest op-
eration possible. Full gold metallization ensures excellent device lifetime
and reliability.
PTF080601F*
Package 31265
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 550 mA, f = 959.8 MHz
Features
•
•
•
Thermally-enhanced packaging
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
55
50
45
40
35
30
25
20
15
10
5
Broadband internal matching
Efficiency
TCASE = 25°C
TCASE = 90°C
Typical EDGE performance
- Average output power = 30 W
- Gain = 18 dB
- Efficiency = 40%
•
•
Typical CW performance
- Output power at P–1dB = 90 W
- Gain = 17 dB
400 kHz
- Efficiency = 60%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
600 kHz
46
•
•
•
Excellent thermal stability
Low HCI drift
32
34
36
38
40
42
44
48
Output Power (dBm)
Capable of handling 10:1 VSWR @ 28 V,
60 W (CW) output power
ESD: Electrostatic discharge sensitive device—observe handling
precautions!
RF Characteristics at T
= 25°C unless otherwise indicated
CASE
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
= 28 V, I = 550 mA, P = 30 W, f = 959.8 MHz
V
DD
DQ
OUT
Characteristic
Error Vector Magnitude
Symbol
EVM (RMS)
ACPR
Min
—
Typ
2.0
–61
–74
18
Max
—
Units
%
Modulation Spectrum @ 400 KHz
Modulation Spectrum @ 600 KHz
Gain
—
—
dBc
dBc
dB
ACPR
—
—
G
ps
—
—
Drain Efficiency
η
D
—
40
—
%
*See Infineon distributor for future availability.
Data Sheet
1 of 10
2004-08-03
PTF080601E
PTF080601F
RF Characteristics (cont.)
Two-Tone Measurements (tested in Infineon test fixture)
V
DD
= 28 V, I
= 550 mA, P = 60 W PEP, f = 960 MHz, tone spacing = 1 MHz
OUT C
DQ
Characteristic
Gain
Symbol
Min
17
Typ
18
Max
—
Units
dB
G
ps
Drain Efficiency
η
D
38
40
—
%
Intermodulation Distortion
IMD
—
–32
–30
dBc
DC Characteristics at T
= 25°C unless otherwise indicated
CASE
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Units
V
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
V
GS
V
DS
V
GS
V
DS
V
GS
= 0 V, I = 10 µA
V
(BR)DSS
DS
= 28 V, V
= 0 V
I
—
1.0
—
µA
Ω
GS
DSS
= 10 V, I = 1 A
R
DS(on)
—
0.1
3.0
—
DS
Operating Gate Voltage
Gate Leakage Current
= 28 V, I
= 550 mA
V
GS
—
—
V
DQ
= 10 V, V = 0 V
DS
I
—
1.0
µA
GSS
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
V
DSS
V
GS
–0.5 to +12
200
V
T
J
°C
Total Device Dissipation
Above 25°C derate by
P
D
227
1.3
W
W/°C
Storage Temperature Range
T
–40 to +150
0.77
°C
STG
Thermal Resistance (T
= 70°C)
R
°C/W
CASE
θJC
Ordering Information
Type
Package Outline
Package Description
Marking
PTF080601E
PTF080601F*
30265
31265
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
PTF080601E
PTF080601F
*See Infineon distributor for future availability.
Data Sheet
2 of 10
2004-08-03
PTF080601E
PTF080601F
Typical Performance (measurements taken in production test fixture)
Modulation Spectrum
POUT = 30 W, f = 959.8 MHz
EDGE EVM Performance
VDD = 28 V, IDQ = 550 mA, f = 959.8 MHz
8
7
6
5
4
3
2
1
0
50
45
40
35
30
25
20
15
10
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-20
-30
-40
-50
-60
-70
-80
-90
-100
TCASE = 25°C
TCASE = 90°C
EVM
Efficiency
400 KHz
600 KHz
EVM
32
34
36
38
40
42
44
46
48
0.40
0.45
0.50
0.55
0.60
0.65
Quiescent Current (A)
Output Power (dBm)
(at P-1dB)
Intermodulation Distortion vs. Output Power
Typical POUT, Gain & Efficiency
(as measured in a broadband circuit)
vs. Frequency
VDD = 28 V, IDQ = 550 mA
VDD = 28 V, IDQ = 550 mA, f1 = 959 MHz, f2 = 960 MHz
-25
19
80
70
-30
3rd Order
18
17
16
15
14
13
Gain
-35
-40
-45
Efficiency
60
50
40
-50
5th
Output Power
-55
7th
-60
-65
36
38
40
42
44
46
48
50
860
880
900
920
940
960
Frequency (MHz)
Output Power (dBm), PEP
All published data at T
= 25°C unless otherwise indicated.
CASE
Data Sheet
3 of 10
2004-08-03
PTF080601E
PTF080601F
Typical Performance (cont.)
Broadband Performance
IM3 vs. Output Power at Selected Biases
VDD = 28 V, IDQ = 550 mA, POUT = 15 W
VDD = 28 V, f1 = 959, f2 = 960 MHz
-28
-32
-36
30
26
22
18
14
10
-1
Efficiency
Gain
-4
-7
480 mA
-40
-10
-13
-16
550 mA
-44
-48
Return Loss
620 mA
-52
36
38
40
42
44
46
48
50
820
850
880
910
940
970
1000
Frequency (MHz)
Output Power (dBm), PEP
Power Sweep
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 550 mA, f = 960 MHz
VDD = 28 V, IDQ = 550 mA, f = 960 MHz
20.0
19.5
19.0
18.5
18.0
17.5
17.0
16.5
16.0
15.5
15.0
20
19
18
17
16
15
14
70
IDQ = 620 mA
60
50
40
30
20
10
Gain
IDQ = 550 mA
IDQ = 480 mA
Efficiency
37
39
41
43
45
47
49
51
37
39
41
43
45
47
49
51
Output Power (dBm)
Output Power (dBm)
Data Sheet
4 of 10
2004-08-03
PTF080601E
PTF080601F
Typical Performance (cont.)
(at 1 dB Compression)
Output Power
IS-95 CDMA Performance
vs. Supply Voltage
VDD = 28 V, IDQ = 550 mA, f = 880 MHz
IDQ = 550 mA, f = 960 MHz
TCASE = 25°C
TCASE = 90°C
40
35
-40
-45
-50
-55
-60
-65
-70
-75
-80
51.0
50.5
50.0
49.5
49.0
48.5
48.0
47.5
47.0
30 ACPR fC – 0.75 MHz
25
20
Efficiency
15
10
5
ALT fC + 1.98 MHz
0
24
26
28
30
32
30
32
34
36
38
40
42
44
Supply Voltage (V)
Output Power (dBm), Avg.
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current.
Three-Carrier CDMA 2000 Performance
VDD = 28 V, IDQ = 550 mA, f = 880 MHz
ACPR Low
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
0.40 A
50
45
40
35
30
25
20
15
-44
-47
-50
-53
-56
-59
-62
-65
ACPR Up
1.50 A
2.60 A
3.80 A
4.95 A
6.00 A
ACPR
ALT Up
Efficiency
39
40
41
42
43
44
-20
0
20
40
60
80
100
Output Power (dBm), Avg.
Case Temperature (ºC)
Data Sheet
5 of 10
2004-08-03
PTF080601E
PTF080601F
Broadband Circuit Impedance
Z0 = 50 Ω
D
Z Source
Z Load
Z Load
G
980 MHz
S
Z Source
980 MHz
Frequency
MHz
Z Source Ω
Z Load Ω
860 MHz
R
jX
R
jX
860
7.45
7.76
7.95
8.15
8.42
–3.79
–2.65
–2.31
–1.95
–1.62
2.74
2.55
2.50
2.48
2.48
–0.42
0.78
1.00
1.28
1.46
860 MHz
920
940
960
980
See next page for Reference Circuit information
Data Sheet
6 of 10
2004-08-03
PTF080601E
PTF080601F
Reference Circuit
VDD
QQ1
LM7805
R1
10 Ω
L1
C21
R5
10KΩ
0.001µF
VDD
R3
+
+
+
C10
R7
5.1kΩ
C1
C2
R2
5.1k Ω
C3
33pF
C6
33pF
C7
1µF
C8
C9
0.1µF
50V
C19
0.001µF
1.2kΩ
C20
0.001µF
10µF
0.1µF
50V
10µF
10µF
35V
35V
35V
Q1
BCP56
R6
24kΩ
R4
1.3kΩ
l
l7
DUT
RF_IN
l1
l2
l3
l5
l6
l9
l10
l11
RF_OUT
C4
33pF
C13
33pF
C5
4.8pF
C11
5.6pF
C12
0.5pF
l8
L2
+
+
C14
33pF
C15
1µF
C17
0.1µF
50V
C16
10µF
35V
C18
10µF
35V
080601_sch
Reference Circuit Schematic for 960 MHz
Circuit Assembly Information
DUT
PCB
PTF080601E or PTF080601F
LDMOS Transistor
2 oz. copper
0.76 mm [.030”] thick, εr = 4.5
Rogers TMM4
Microstrip
Electrical Characteristics at 960 MHz Dimensions: L x W (mm)
Dimensions: L xW (in.)
l1
0.083 λ, 50 Ω
0.098 λ, 50 Ω
0.058 λ, 50 Ω
0.288 λ, 73.0 Ω
0.061 λ, 7.5 Ω
0.058 λ, 9.2 Ω
0.198 λ, 50 Ω
0.144 λ, 9.2 Ω
0.134 λ, 38.0 Ω
0.029 λ, 50 Ω
14.27 x 1.35
16.76 x 1.35
9.98 x 1.35
0.562 x 0.053
0.660 x 0.053
0.393 x 0.053
2.000 x 0.025
0.365 x 0.640
0.350 x 0.508
0.890 x 0.050
0.870 x 0.508
0.880 x 0.085
0.195 x 0.054
l2
l3
l4
50.80 x 0.64
9.27 x 16.26
8.89 x 12.90
22.61 x 1.27
22.10 x 12.90
22.35 x 2.16
14.27 x 1.35
l5
l6
l7, l8
l9
l10
l11
Data Sheet
7 of 10
2004-08-03
PTF080601E
PTF080601F
Reference Circuit (cont.)
VDD
R5
VDD
VDD
C10
R7
C1
C21
C19
R5
C21
QQ1
C20
R7
3 5 V
C19
LM
+
C1
QQ1
C20
1 0
LM
3 5 V
1
+
R6
R4
L1
C2
R6
C2
C6
R4
R3
C7
R3
Q1
Q1
C9
R1 R2 C3
C8
R1 R2 C3
C12 C13
080601_assy_dtl
RF_IN
RF_OUT
C4
C5
C11
C16
C17
080601out_01
VDD
C14
C15
080601in_01
L2
C18
080601_assy
1
Reference Circuit (not to scale)
Component
Description
Manufacturer
P/N or Comment
C1, C8, C10, C16,
C18
Capacitor, 10 µF, 35 V,
Digi-Key
PCS6106TR-ND
Tant TE Series SMD
C2, C9, C17
Capacitor, 0.1 µF, 50 V, 1206
Capacitor, 33 pF
Digi-Key
ATC
P4525-ND
100B 330
C3, C4, C6, C13,
C14
C5
Capacitor, 4.8 pF
ATC
100B 4R8
C7, C15
Capacitor, 1 µF, 50 V
Capacitor, 5.6 pF
Digi-Key
ATC
19528-ND
C11
100B 5R6
C12
Capacitor, 0.5 pF
ATC
100B 0R5
C19, C20, C21
Capacitor, 0.001 µF, 50 V, 0603
Ferrite, 6 mm
Digi-Key
Ferroxcube
Infineon
Infineon
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
PCC1772CT-ND
53/3/4.6-452
BCP56
L1, L2
Q1
Transistor
QQ1
R1
Voltage Regulator
LM7805
Resistor, 1 0 ohms, 1/4 W, 1206
Resistor, 5.1 k-ohms, 1/4 W, 1206
P10ACT-ND
P5.1KACT-ND
P1.2KGCT-ND
P1.3KGCT-ND
3224W-103ETR-ND
P24KGCT-ND
P5.1KACT-ND
R2
R3
Resistor, 1.2 k-ohms, 1/10 W, 0603
Resistor, 1.3 k-ohms, 1/10 W, 0603
Variable Resistor, 10 k-ohms, 0.25 W
Resistor, 24 k-ohms, 1/10 W, 0603
Resistor, 5.1 k-ohms, 1/4 W, 1206
R4
R5
R6
R7
1
Gerber files for this circuit are available on request.
Data Sheet
8 of 10
2004-08-03
PTF080601E
PTF080601F
Package Outline Specifications*
Package 30265
7.11
[.280]
(45° X 2.03
[.080])
C
L
D
2X 2.59± 0.38
[.107 ± .015]
S
LID 10.16± 0.25
[.400± .010]
C
FLANGE 9.78
[.385]
L
15.60± 0.51
[.614± .020]
G
4x 1.52
[.060]
2X R1.60
[.063]
2x 7.11
[.280]
15.23
[.600]
SPH 1.57
[.062]
10.16± 0.25
[.400± .010]
0.51
[.020]
3.48± 0.38
[.137± .015]
0.0381 [.0015] -A-
20.31
[.800]
1.02
[.040]
H-30265-2-1-2303
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
*Information not yet available for Package 31265. See your Infineon distributor for future availability.
Data Sheet
9 of 10
2004-08-03
PTF080601E/F
Confidential – Internal Only
Revision History:
2004-08-03
Data Sheet
2003-12-05, Preliminary
Previous Version:
Page
Delete PTF080601A, change package, add circuit and other information.
We Listen toYour Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GOLDMOS) USA
or +1 408 776 0600 International
Edition 2004-08-03
Published by InfineonTechnologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© InfineonTechnologies AG 2003.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
10 of 10
2004-08-03
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