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PTFA212001F [INFINEON]

Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz; 热增强型高功率射频LDMOS FET的200 W， 2110年至2170年兆赫
PTFA212001F
型号： PTFA212001F
厂家： Infineon    Infineon
描述：

Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz
热增强型高功率射频LDMOS FET的200 W， 2110年至2170年兆赫

射频
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PTFA212001E  
PTFA212001F  
Confidential, Limited Internal Distribution  
Thermally-Enhanced High Power RF LDMOS FETs  
200 W, 2110 – 2170 MHz  
Description  
The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs  
designed for single- and two-carrier WCDMA power amplifier  
applications in the 2110 to 2170 MHz band. Features include input  
and output matching, and thermally-enhanced packages with slotted  
or earless flanges. Manufactured with Infineon's advanced LDMOS  
process, these devices provide excellent thermal performance and  
superior reliability.  
PTFA212001E  
Package H-36260-2  
PTFA212001F  
Package H-37260-2  
Features  
2-Carrier WCDMA Drive-up  
VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP  
WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing  
•
Thermally-enhanced packages, Pb-free and  
RoHS compliant  
•
•
Broadband internal matching  
-23  
-28  
-33  
-38  
-43  
-48  
-53  
30  
25  
20  
15  
10  
5
Typical two-carrier WCDMA performance at  
2140 MHz, 30 V  
Efficiency  
- Average output power = 50 W  
- Linear Gain = 15.8 dB  
- Efficiency = 28%  
- Intermodulation distortion = –35.5 dBc  
- Adjacent channel power = –40 dBc  
IM3  
•
Typical single-carrier WCDMA performance at  
2140 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB  
- Average output power = 70 W  
- Linear Gain = 15.5 dB  
ACPR  
46  
- Efficiency = 34%  
- Adjacent channel power = –37 dBc  
0
34  
36  
38  
40  
42  
44  
48  
•
•
Typical CW performance, 2170 MHz, 30 V  
- Output power at P–1dB = 220 W  
- Efficiency = 54%  
Average Output Power (dBm)  
Integrated ESD protection: Human Body Model,  
Class 2 (minimum)  
•
•
Excellent thermal stability, low HCI drift  
Capable of handling 5:1 VSWR @ 30 V,  
200 W (CW) output power  
All published data at T  
= 25°C unless otherwise indicated  
*See Infineon distributor for future availability.  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 11  
Rev. 05.1, 2009-02-24  
PTFA212001E  
PTFA212001F  
Confidential, Limited Internal Distribution  
RF Characteristics  
WCDMA Measurements (tested in Infineon test fixture)  
V
DD  
= 30 V, I  
= 1.6 A, P  
= 50 W average  
DQ  
OUT  
ƒ = 2135 MHz, ƒ = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF  
1
2
Characteristic  
Gain  
Symbol  
Min  
15.3  
26.5  
—
Typ  
15.8  
28  
Max  
—
Unit  
dB  
G
ps  
Drain Efficiency  
hD  
—
%
Intermodulation Distortion  
IMD  
–35.5  
–34  
dBc  
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)  
V
DD  
= 30 V, I  
= 1.6 A, P = 200 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz  
OUT  
DQ  
Characteristic  
Gain  
Symbol  
Min  
—
Typ  
15.8  
38.5  
–28  
Max  
—
Unit  
dB  
G
ps  
Drain Efficiency  
hD  
—
—
%
Intermodulation Distortion  
IMD  
—
—
dBc  
DC Characteristics  
Characteristic  
Conditions  
Symbol  
Min  
65  
—
Typ  
—
Max  
—
Unit  
V
Drain-Source Breakdown Voltage  
Drain Leakage Current  
V
GS  
V
DS  
V
DS  
V
GS  
V
DS  
V
GS  
= 0 V, I = 10 mA  
V
(BR)DSS  
DS  
= 30 V, V  
= 63 V, V  
= 0 V  
= 0 V  
I
I
—
1.0  
10.0  
—
µA  
µA  
W
GS  
GS  
DSS  
DSS  
—
—
On-State Resistance  
Operating Gate Voltage  
Gate Leakage Current  
= 10 V, V = 0.1 V  
R
DS(on)  
—
0.05  
2.5  
—
DS  
= 30 V, I  
= 1.6 A  
V
GS  
2.0  
—
3.0  
1.0  
V
DQ  
= 10 V, V = 0 V  
I
µA  
DS  
GSS  
Data Sheet  
2 of 11  
Rev. 05.1, 2009-02-24  
PTFA212001E  
PTFA212001F  
Confidential, Limited Internal Distribution  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Junction Temperature  
Total Device Dissipation  
Above 25°C derate by  
Storage Temperature Range  
V
65  
V
DSS  
V
–0.5 to +12  
200  
V
°C  
GS  
T
J
P
625  
W
D
3.57  
W/°C  
°C  
T
STG  
–40 to +150  
0.28  
Thermal Resistance (T  
= 70°C, 200 W CW)  
R
°C/W  
CASE  
qJC  
Ordering Information  
Type andVersion  
PTFA212001E V4  
PTFA212001F V4  
PackageType  
H-36260-2  
Package Description  
Marking  
Thermally-enhanced slotted flange, single-ended  
Thermally-enhanced earless flange, single-ended  
PTFA212001E  
PTFA212001F  
H-37260-2  
Typical Performance (data taken in a production test fixture)  
Two-carrier WCDMA at Selected Biases  
VDD = 30 V, ƒ = 2140 MHz, 3GPP WCDMA signal,  
P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ  
Broadband Performance  
VDD = 30 V, IDQ = 1600 mA, POUT = 50.0 dBm  
-30  
-35  
35  
30  
25  
20  
15  
10  
-5  
Return Loss  
-10  
-15  
-20  
-25  
-30  
-35  
1.4 A  
2.0 A  
-40  
-45  
Efficiency  
Gain  
-50  
1.8 A  
1.6 A  
-55  
35  
37  
39  
41  
43  
45  
47  
2050  
2090  
2130  
2170  
2210  
2250  
Frequency (MHz)  
Average Output Power (dBm)  
*See Infineon distributor for future availability.  
Data Sheet  
3 of 11  
Rev. 05.1, 2009-02-24  
PTFA212001E  
PTFA212001F  
Confidential, Limited Internal Distribution  
Typical Performance (cont.)  
Single-carrier WCDMA Drive-up  
Power Sweep, CW Conditions  
VDD = 30 V, IDQ = 1600 mA, ƒ = 2170 MHz  
VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz,  
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,  
P/A R = 8.5 dB, 3.84 MHz BW  
TCASE = 25°C  
18  
60  
50  
40  
30  
20  
10  
-35  
-40  
-45  
-50  
-55  
40  
30  
20  
10  
0
ACPR Up  
ACPR Low  
TCASE = 90°C  
17  
Efficiency  
16  
Gain  
15  
Efficiency  
14  
ACPR  
43  
13  
0
40  
80  
120  
160  
200  
240  
33  
35  
37  
39  
41  
45  
47  
49  
Average Output Power (dBm)  
Output Power (W)  
Voltage Sweep  
IDQ = 1600 mA, ƒ = 2140 MHz,  
2-Tone Drive-up at Optimum IDQ  
VDD = 30 V, IDQ = 1600 mA,  
tone spacing = 1 MHz, POUT (PEP) = 53 dBm  
ƒ = 2140 MHz, tone spacing = 1 MHz  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
50  
45  
40  
35  
30  
25  
20  
15  
10  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
-55  
-60  
-65  
-70  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
Efficiency  
Efficiency  
IM3  
IM3 Up  
IM5  
Gain  
IM7  
0
23  
25  
27  
29  
31  
33  
39  
41  
43  
45  
47  
49  
51  
53  
55  
Supply Voltage (V)  
Output Power, PEP (dBm)  
Data Sheet  
4 of 11  
Rev. 05.1, 2009-02-24  
PTFA212001E  
PTFA212001F  
Confidential, Limited Internal Distribution  
Typical Performance (cont.)  
Power Gain vs. Power Sweep (CW)  
Output Peak-to-average Ratio Compression  
(PARC) at Various Power Levels  
over Temperature  
VDD = 30 V, IDQ = 1500 mA, ƒ = 2170 MHz  
VDD = 30 V, IDQ = 1500 mA, ƒ = 2170 MHz,  
single-carrier WCDMA input PAR = 7.5 dB  
100  
17  
16  
15  
14  
13  
12  
–15°C  
25°C  
10  
48 dBm  
46 dBm  
Input  
1
85°C  
52 dBm  
0.1  
0.01  
50.5 dBm  
50 dBm  
0.001  
1
2
3
4
5
6
7
8
1
10  
100  
1000  
Output Power (W)  
Peak-to-Average (dB)  
Intermodulation Distortion Products  
vs. Tone Spacing  
VDD = 30 V IDQ = 1600 mA, ƒ = 2140 MHz,  
Bias Voltage vs. Temperature  
Voltage normalized to typical gate voltage,  
series show current  
POUT = 53 dBm PEP  
0.44 A  
1.32 A  
2.20 A  
3.30 A  
6.61 A  
9.91 A  
13.22 A  
16.52 A  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
-55  
1.03  
1.02  
1.01  
1.00  
0.99  
0.98  
0.97  
0.96  
0.95  
3rd order  
5th  
7th  
0
10  
20  
30  
40  
-20  
0
20  
40  
60  
80  
100  
Case Temperature (°C)  
Tone Spacing (MHz)  
Data Sheet  
5 of 11  
Rev. 05.1, 2009-02-24  
PTFA212001E  
PTFA212001F  
Confidential, Limited Internal Distribution  
Broadband Circuit Impedance  
Frequency  
MHz  
Z Source W  
Z Load W  
D
R
jX  
4.1  
3.2  
2.3  
1.0  
–0.6  
R
jX  
Z Source  
Z Load  
2080  
18.2  
19.0  
19.8  
20.4  
20.8  
1.1  
1.0  
1.0  
1.0  
1.0  
2.5  
2.8  
3.0  
3.2  
3.5  
2110  
2140  
G
2170  
S
2200  
Z0 = 50 W  
Z Load  
Z Source  
2200 MHz  
2080 MHz  
2080 MHz  
2200 MHz  
See next page for circuit information  
Data Sheet  
6 of 11  
Rev. 05.1, 2009-02-24  
PTFA212001E  
PTFA212001F  
Confidential, Limited Internal Distribution  
Reference Circuit  
C1  
0.001µF  
R2  
1.3K Ω  
R1  
1.2K Ω  
QQ1  
LM7805  
VDD  
Q1  
BCP56  
C2  
0.001µF  
C3  
0.001µF  
R3  
2K Ω  
R6  
5.1K Ω  
L1  
R8  
VDD  
2K Ω  
C4  
4.7µF  
16V  
C5  
0.1µF  
C6  
7.5pF  
C13  
8.2pF  
C14  
2.2µF  
C15  
1µF  
C16  
1µF  
C17  
0.1µF  
C18  
10µF  
50V  
R5  
2K Ω  
l8  
l9  
l10  
l11  
C9  
0.9pF  
C25  
0.4pF  
C27  
0.5pF  
C29  
8.2pF  
DUT  
l1  
l2  
l3  
l4  
l5  
l6  
l7  
l12  
l13  
l14  
l15  
l16  
l17  
RF_OUT  
RF_IN  
C7  
8.2pF  
C8  
0.2pF  
C26  
0.4pF  
C28  
0.5pF  
R7  
5.1K Ω  
L2  
C11  
0.1µF  
C12  
7.5pF  
C21  
1µF  
C22  
1µF  
C23  
0.1µF  
C10  
4.7µF  
16V  
C19  
8.2pF  
C20  
2.2µF  
C24  
10µF  
50V  
Reference circuit schematic for ƒ = 2140 MHz  
Circuit Assembly Information  
DUT  
PCB  
PTFA212001E or PTFA212001F  
0.76 mm [.030"] thick, e = 3.48  
LDMOS Transistor  
Rogers RO4350  
1 oz. copper  
r
1
Microstrip  
Electrical Characteristics at 2140 MHz Dimensions: L xW (mm) Dimensions: L xW (in.)  
l1  
0.042 l , 50.0 W  
3.56 x 1.68  
0.140 x 0.066  
l2  
0.048 l , 50.0 W  
4.11 x 1.68  
0.162 x 0.066  
l3  
0.026 l , 50.0 W  
2.08 x 1.68  
0.082 x 0.066  
l4  
0.059 l , 50.0 W  
5.03 x 1.68  
0.198 x 0.066  
l5 (taper)  
l6  
l7  
l8, l9  
l10, l11  
l12  
l13 (taper)  
l14 (taper)  
l15 (taper)  
l16  
0.062 l , 50.0 W / 6.9 W  
0.015 l , 6.9 W  
5.00 x 1.68 / 20.32  
1.14 x 20.32  
2.16 x 20.32  
11.63 x 1.27  
21.51 x 1.65  
5.49 x 28.83  
1.52 x 28.83 / 20.62  
2.11 x 20.62 / 9.65  
2.06 x 9.65 / 2.34  
2.77 x 2.34  
0.197 x 0.066 / 0.800  
0.045 x 0.800  
0.028 l , 6.9 W  
0.085 x 0.800  
0.136 l , 60.0 W  
0.458 x 0.050  
0.254 l , 51.2 W  
0.847 x 0.065  
0.071 l , 5.0 W  
0.216 x 1.135  
0.019 l , 5.0 W / 6.8 W  
0.026 l , 6.8 W / 13.5 W  
0.026 l , 13.5 W / 40.9 W  
0.029 l , 40.9 W  
0.060 x 1.135 / 0.812  
0.083 x 0.812 / 0.380  
0.081 x 0.380 / 0.092  
0.109 x 0.092  
l17  
0.107 l , 50.0 W  
9.04 x 1.68  
0.356 x 0.066  
1
Electrical characteristics are rounded.  
Data Sheet  
7 of 11  
Rev. 05.1, 2009-02-24  
PTFA212001E  
PTFA212001F  
Confidential, Limited Internal Distribution  
Reference Circuit (cont.)  
RO4350_.030  
VDD  
RO4350_.030  
C13  
C2  
R1  
C1  
C14  
R3  
R8  
QQ1  
Q1  
C15  
C16  
L1  
C3  
C18  
R2  
VDD  
R6  
C5  
C6  
C25  
C4  
C17  
C23  
C27  
R5  
C9  
RF_OUT  
VDD  
RF_IN  
C8  
C10  
C29  
C24  
C7  
C28  
C26  
C11 C12  
L2  
C21  
C22  
C19  
R7  
C20  
A212001IN_01  
A212001out_01  
a212001ef_assy  
Reference circuit assembly diagram* (not to scale)  
Component  
Description  
Suggested Manufacturer  
P/N or Comment  
C1, C2, C3  
C4, C10  
Capacitor, 0.001 µF  
Digi-Key  
PCC1772CT-ND  
PCS3475CT-ND  
PCC104BCT-ND  
100B 7R5  
Capacitor, 4.7 µF, 16 V  
Capacitor, 0.1 µF  
Digi-Key  
C5, C11, C17, C23  
C6, C12  
Digi-Key  
Ceramic capacitor, 7.5 pF  
Ceramic capacitor, 8.2 pF  
Ceramic capacitor, 0.2 pF  
Ceramic capacitor, 0.9 pF  
Capacitor, 2.2 µF  
ATC  
C7, C13, C19, C29  
C8  
ATC  
100B 8R2  
ATC  
600S 0R2 BT  
600A 0R9 BT  
445-1474-2-ND  
445-1411-2-ND  
TPSE106K050R0400  
100B 0R4  
C9  
ATC  
C14, C20  
Digi-Key  
C15, C16, C21, C22 Ceramic capacitor, 1 µF  
Digi-Key  
C18, C24  
C25, C26  
C27, C28  
L1, L2  
Q1  
Tantalum capacitor, 10 µF, 50 V  
Ceramic capacitor, 0.4 pF  
Ceramic capacitor, 0.5 pF  
Ferrite, 8.9 mm  
Garrett Electronics  
ATC  
ATC  
100B 0R5  
Elna Magnetics  
Infineon Technologies  
National Semiconductor  
Digi-Key  
BDS 4.6/3/8.9-4S2  
BCP56  
Transistor  
QQ1  
Voltage regulator  
LM7805  
R1  
Chip resistor 1.2 k-ohms  
Chip resistor 1.3 k-ohms  
Chip resistor 2 k-ohms  
not used  
P1.2KGCT-ND  
P1.3KGCT-ND  
P2KECT-ND  
R2  
Digi-Key  
R3, R5  
R4  
Digi-Key  
R6, R7  
R8  
Chip resistor 5.1 k-ohms  
Potentiometer 2 k-ohms  
Digi-Key  
Digi-Key  
P5.1KECT-ND  
3224W-202ETR-ND  
* Gerber Files for this circuit available on request  
Data Sheet  
8 of 11  
Rev. 05.1, 2009-02-24  
PTFA212001E  
PTFA212001F  
Confidential, Limited Internal Distribution  
Package Outline Specifications  
Package H-36260-2  
45° X 2.03  
[.080]  
2X 12.70  
[.500]  
4X R 1.52  
[R.060]  
C
L
4.83±0.50  
[.190±.020]  
D
S
+0.10  
FLANGE 13.72  
[.540]  
LID 13.21  
–0.15  
+.004  
–.006  
C
L
[.520  
]
23.37±0.51  
[.920±.020]  
2X R1.63  
[R.064]  
G
27.94  
[1.100]  
SPH 1.57  
[.062]  
22.35±0.23  
[.880±.009]  
C
L
4.11±0.38  
[.162±.015]  
0.0381 [.0015]  
-A-  
0 4 - 2 5 - 0 8  
h
-
3
6
+
3
7
2
6
0
-
2
_
3
6
2
6
0
/
34.04  
[1.340]  
1.02  
[.040]  
Diagram Notes—unless otherwise specified:  
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].  
2. All tolerances 0.127 [.005] unless specified otherwise.  
3. Pins: D = drain, S = source, G = gate.  
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.  
5. Primary dimensions are mm. Alternate dimensions are inches.  
6. Gold plating thickness:  
S, D, G - flange & leads: 1.14 0.38 micron [45 15 microinch]  
Find the latest and most complete information about products and packaging at the Infineon Internet page  
http://www.infineon.com/rfpower  
Data Sheet  
9 of 11  
Rev. 05.1, 2009-02-24  
PTFA212001E  
PTFA212001F  
Confidential, Limited Internal Distribution  
Package Outline Specifications (cont.)  
Package H-37260-2  
2X 12.70  
[.500]  
45° X 2.031  
[.080]  
C
L
4.83±0.50  
[.190±.020]  
D
13.72  
[.540]  
C
+0.10  
–0.15  
+.004  
L
LID 13.21  
[.520  
]
23.37±0.51  
[.920±.020]  
–.006  
G
+0.381  
–0.127  
4X R0.508  
+.015  
–.005  
[R.020  
]
LID 22.35±0.23  
[.880±.009]  
4.11±0.38  
[.162±.015]  
0.0381 [.0015] -A-  
- 3 6 + 3 7 2 6 0 - 2 _ 3 7 2 6 0 /0 4 - 2 5 - 0 8  
h
1.02  
[.040]  
SPH 1.57  
[.062]  
FLANGE 23.11  
[.910]  
S
Diagram Notes—unless otherwise specified:  
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].  
2. All tolerances 0.127 [.005] unless specified otherwise.  
3. Pins: D = drain, S = source, G = gate.  
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.  
5. Primary dimensions are mm. Alternate dimensions are inches.  
6. Gold plating thickness:  
S, D, G - flange & leads: 1.14 0.38 micron [45 15 microinch]  
Find the latest and most complete information about products and packaging at the Infineon Internet page  
http://www.infineon.com/rfpower  
Data Sheet  
10 of 11  
Rev. 05.1, 2009-02-24  
PTFA212001E/F  
Confidential, Limited Internal Distribution  
Revision History:  
PreviousVersion:  
2009-02-24  
Data Sheet  
2007-12-05, Data Sheet 2006-06-12, Preliminary Data Sheet)  
(
Page  
1, 2, 9, 10  
1, 2  
Subjects (major changes since last revision)  
Update product to V4, with new package technologies. Update package outline diagrams.  
Update gain specifications.  
Fixed typing error  
8
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GOLDMOS is a registered trademark of Infineon Technologies AG.  
Edition 2009-02-24  
Published by  
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81726 Munich, Germany  
© 2009 InfineonTechnologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or  
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and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of  
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Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in  
question, please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with the express written  
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of  
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices  
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human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.  
Data Sheet  
11 of 11  
Rev. 05.1, 2009-02-24  

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