PTFA212001FV4 [INFINEON]
RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;型号: | PTFA212001FV4 |
厂家: | Infineon |
描述: | RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
文件: | 总11页 (文件大小:389K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
200 W, 2110 – 2170 MHz
Description
The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs
designed for single- and two-carrier WCDMA power amplifier
applications in the 2110 to 2170 MHz band. Features include input
and output matching, and thermally-enhanced packages with slotted
or earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFA212001E
Package H-36260-2
PTFA212001F
Package H-37260-2
Features
2-Carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP
WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
•
Thermally-enhanced packages, Pb-free and
RoHS compliant
•
•
Broadband internal matching
-23
-28
-33
-38
-43
-48
-53
30
25
20
15
10
5
Typical two-carrier WCDMA performance at
2140 MHz, 30 V
Efficiency
- Average output power = 50 W
- Linear Gain = 15.8 dB
- Efficiency = 28%
- Intermodulation distortion = –35.5 dBc
- Adjacent channel power = –40 dBc
IM3
•
Typical single-carrier WCDMA performance at
2140 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB
- Average output power = 70 W
- Linear Gain = 15.5 dB
ACPR
46
- Efficiency = 34%
- Adjacent channel power = –37 dBc
0
34
36
38
40
42
44
48
•
•
Typical CW performance, 2170 MHz, 30 V
- Output power at P–1dB = 220 W
- Efficiency = 54%
Average Output Power (dBm)
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•
•
Excellent thermal stability, low HCI drift
Capable of handling 5:1 VSWR @ 30 V,
200 W (CW) output power
All published data at T
= 25°C unless otherwise indicated
*See Infineon distributor for future availability.
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 11
Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
V
DD
= 30 V, I
= 1.6 A, P
= 50 W average
DQ
OUT
ƒ = 2135 MHz, ƒ = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
1
2
Characteristic
Gain
Symbol
Min
15.3
26.5
—
Typ
15.8
28
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
—
%
Intermodulation Distortion
IMD
–35.5
–34
dBc
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 30 V, I
= 1.6 A, P = 200 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
OUT
DQ
Characteristic
Gain
Symbol
Min
—
Typ
15.8
38.5
–28
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
—
—
%
Intermodulation Distortion
IMD
—
—
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
V
GS
V
DS
V
DS
V
GS
V
DS
V
GS
= 0 V, I = 10 mA
V
(BR)DSS
DS
= 30 V, V
= 63 V, V
= 0 V
= 0 V
I
I
—
1.0
10.0
—
µA
µA
W
GS
GS
DSS
DSS
—
—
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
= 10 V, V = 0.1 V
R
DS(on)
—
0.05
2.5
—
DS
= 30 V, I
= 1.6 A
V
GS
2.0
—
3.0
1.0
V
DQ
= 10 V, V = 0 V
I
µA
DS
GSS
Data Sheet
2 of 11
Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
V
65
V
DSS
V
–0.5 to +12
200
V
°C
GS
T
J
P
625
W
D
3.57
W/°C
°C
T
STG
–40 to +150
0.28
Thermal Resistance (T
= 70°C, 200 W CW)
R
°C/W
CASE
qJC
Ordering Information
Type andVersion
PTFA212001E V4
PTFA212001F V4
PackageType
H-36260-2
Package Description
Marking
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
PTFA212001E
PTFA212001F
H-37260-2
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA at Selected Biases
VDD = 30 V, ƒ = 2140 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ
Broadband Performance
VDD = 30 V, IDQ = 1600 mA, POUT = 50.0 dBm
-30
-35
35
30
25
20
15
10
-5
Return Loss
-10
-15
-20
-25
-30
-35
1.4 A
2.0 A
-40
-45
Efficiency
Gain
-50
1.8 A
1.6 A
-55
35
37
39
41
43
45
47
2050
2090
2130
2170
2210
2250
Frequency (MHz)
Average Output Power (dBm)
*See Infineon distributor for future availability.
Data Sheet
3 of 11
Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Single-carrier WCDMA Drive-up
Power Sweep, CW Conditions
VDD = 30 V, IDQ = 1600 mA, ƒ = 2170 MHz
VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
P/A R = 8.5 dB, 3.84 MHz BW
TCASE = 25°C
18
60
50
40
30
20
10
-35
-40
-45
-50
-55
40
30
20
10
0
ACPR Up
ACPR Low
TCASE = 90°C
17
Efficiency
16
Gain
15
Efficiency
14
ACPR
43
13
0
40
80
120
160
200
240
33
35
37
39
41
45
47
49
Average Output Power (dBm)
Output Power (W)
Voltage Sweep
IDQ = 1600 mA, ƒ = 2140 MHz,
2-Tone Drive-up at Optimum IDQ
VDD = 30 V, IDQ = 1600 mA,
tone spacing = 1 MHz, POUT (PEP) = 53 dBm
ƒ = 2140 MHz, tone spacing = 1 MHz
-10
-15
-20
-25
-30
-35
-40
-45
50
45
40
35
30
25
20
15
10
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
50
45
40
35
30
25
20
15
10
5
Efficiency
Efficiency
IM3
IM3 Up
IM5
Gain
IM7
0
23
25
27
29
31
33
39
41
43
45
47
49
51
53
55
Supply Voltage (V)
Output Power, PEP (dBm)
Data Sheet
4 of 11
Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Gain vs. Power Sweep (CW)
Output Peak-to-average Ratio Compression
(PARC) at Various Power Levels
over Temperature
VDD = 30 V, IDQ = 1500 mA, ƒ = 2170 MHz
VDD = 30 V, IDQ = 1500 mA, ƒ = 2170 MHz,
single-carrier WCDMA input PAR = 7.5 dB
100
17
16
15
14
13
12
–15°C
25°C
10
48 dBm
46 dBm
Input
1
85°C
52 dBm
0.1
0.01
50.5 dBm
50 dBm
0.001
1
2
3
4
5
6
7
8
1
10
100
1000
Output Power (W)
Peak-to-Average (dB)
Intermodulation Distortion Products
vs. Tone Spacing
VDD = 30 V IDQ = 1600 mA, ƒ = 2140 MHz,
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
POUT = 53 dBm PEP
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
13.22 A
16.52 A
-15
-20
-25
-30
-35
-40
-45
-50
-55
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
3rd order
5th
7th
0
10
20
30
40
-20
0
20
40
60
80
100
Case Temperature (°C)
Tone Spacing (MHz)
Data Sheet
5 of 11
Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Frequency
MHz
Z Source W
Z Load W
D
R
jX
4.1
3.2
2.3
1.0
–0.6
R
jX
Z Source
Z Load
2080
18.2
19.0
19.8
20.4
20.8
1.1
1.0
1.0
1.0
1.0
2.5
2.8
3.0
3.2
3.5
2110
2140
G
2170
S
2200
Z0 = 50 W
Z Load
Z Source
2200 MHz
2080 MHz
2080 MHz
2200 MHz
See next page for circuit information
Data Sheet
6 of 11
Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Reference Circuit
C1
0.001µF
R2
1.3K Ω
R1
1.2K Ω
QQ1
LM7805
VDD
Q1
BCP56
C2
0.001µF
C3
0.001µF
R3
2K Ω
R6
5.1K Ω
L1
R8
VDD
2K Ω
C4
4.7µF
16V
C5
0.1µF
C6
7.5pF
C13
8.2pF
C14
2.2µF
C15
1µF
C16
1µF
C17
0.1µF
C18
10µF
50V
R5
2K Ω
l8
l9
l10
l11
C9
0.9pF
C25
0.4pF
C27
0.5pF
C29
8.2pF
DUT
l1
l2
l3
l4
l5
l6
l7
l12
l13
l14
l15
l16
l17
RF_OUT
RF_IN
C7
8.2pF
C8
0.2pF
C26
0.4pF
C28
0.5pF
R7
5.1K Ω
L2
C11
0.1µF
C12
7.5pF
C21
1µF
C22
1µF
C23
0.1µF
C10
4.7µF
16V
C19
8.2pF
C20
2.2µF
C24
10µF
50V
Reference circuit schematic for ƒ = 2140 MHz
Circuit Assembly Information
DUT
PCB
PTFA212001E or PTFA212001F
0.76 mm [.030"] thick, e = 3.48
LDMOS Transistor
Rogers RO4350
1 oz. copper
r
1
Microstrip
Electrical Characteristics at 2140 MHz Dimensions: L xW (mm) Dimensions: L xW (in.)
l1
0.042 l , 50.0 W
3.56 x 1.68
0.140 x 0.066
l2
0.048 l , 50.0 W
4.11 x 1.68
0.162 x 0.066
l3
0.026 l , 50.0 W
2.08 x 1.68
0.082 x 0.066
l4
0.059 l , 50.0 W
5.03 x 1.68
0.198 x 0.066
l5 (taper)
l6
l7
l8, l9
l10, l11
l12
l13 (taper)
l14 (taper)
l15 (taper)
l16
0.062 l , 50.0 W / 6.9 W
0.015 l , 6.9 W
5.00 x 1.68 / 20.32
1.14 x 20.32
2.16 x 20.32
11.63 x 1.27
21.51 x 1.65
5.49 x 28.83
1.52 x 28.83 / 20.62
2.11 x 20.62 / 9.65
2.06 x 9.65 / 2.34
2.77 x 2.34
0.197 x 0.066 / 0.800
0.045 x 0.800
0.028 l , 6.9 W
0.085 x 0.800
0.136 l , 60.0 W
0.458 x 0.050
0.254 l , 51.2 W
0.847 x 0.065
0.071 l , 5.0 W
0.216 x 1.135
0.019 l , 5.0 W / 6.8 W
0.026 l , 6.8 W / 13.5 W
0.026 l , 13.5 W / 40.9 W
0.029 l , 40.9 W
0.060 x 1.135 / 0.812
0.083 x 0.812 / 0.380
0.081 x 0.380 / 0.092
0.109 x 0.092
l17
0.107 l , 50.0 W
9.04 x 1.68
0.356 x 0.066
1
Electrical characteristics are rounded.
Data Sheet
7 of 11
Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
RO4350_.030
VDD
RO4350_.030
C13
C2
R1
C1
C14
R3
R8
QQ1
Q1
C15
C16
L1
C3
C18
R2
VDD
R6
C5
C6
C25
C4
C17
C23
C27
R5
C9
RF_OUT
VDD
RF_IN
C8
C10
C29
C24
C7
C28
C26
C11 C12
L2
C21
C22
C19
R7
C20
A212001IN_01
A212001out_01
a212001ef_assy
Reference circuit assembly diagram* (not to scale)
Component
Description
Suggested Manufacturer
P/N or Comment
C1, C2, C3
C4, C10
Capacitor, 0.001 µF
Digi-Key
PCC1772CT-ND
PCS3475CT-ND
PCC104BCT-ND
100B 7R5
Capacitor, 4.7 µF, 16 V
Capacitor, 0.1 µF
Digi-Key
C5, C11, C17, C23
C6, C12
Digi-Key
Ceramic capacitor, 7.5 pF
Ceramic capacitor, 8.2 pF
Ceramic capacitor, 0.2 pF
Ceramic capacitor, 0.9 pF
Capacitor, 2.2 µF
ATC
C7, C13, C19, C29
C8
ATC
100B 8R2
ATC
600S 0R2 BT
600A 0R9 BT
445-1474-2-ND
445-1411-2-ND
TPSE106K050R0400
100B 0R4
C9
ATC
C14, C20
Digi-Key
C15, C16, C21, C22 Ceramic capacitor, 1 µF
Digi-Key
C18, C24
C25, C26
C27, C28
L1, L2
Q1
Tantalum capacitor, 10 µF, 50 V
Ceramic capacitor, 0.4 pF
Ceramic capacitor, 0.5 pF
Ferrite, 8.9 mm
Garrett Electronics
ATC
ATC
100B 0R5
Elna Magnetics
Infineon Technologies
National Semiconductor
Digi-Key
BDS 4.6/3/8.9-4S2
BCP56
Transistor
QQ1
Voltage regulator
LM7805
R1
Chip resistor 1.2 k-ohms
Chip resistor 1.3 k-ohms
Chip resistor 2 k-ohms
not used
P1.2KGCT-ND
P1.3KGCT-ND
P2KECT-ND
R2
Digi-Key
R3, R5
R4
Digi-Key
R6, R7
R8
Chip resistor 5.1 k-ohms
Potentiometer 2 k-ohms
Digi-Key
Digi-Key
P5.1KECT-ND
3224W-202ETR-ND
* Gerber Files for this circuit available on request
Data Sheet
8 of 11
Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-36260-2
45° X 2.03
[.080]
2X 12.70
[.500]
4X R 1.52
[R.060]
C
L
4.83±0.50
[.190±.020]
D
S
+0.10
FLANGE 13.72
[.540]
LID 13.21
–0.15
+.004
–.006
C
L
[.520
]
23.37±0.51
[.920±.020]
2X R1.63
[R.064]
G
27.94
[1.100]
SPH 1.57
[.062]
22.35±0.23
[.880±.009]
C
L
4.11±0.38
[.162±.015]
0.0381 [.0015]
-A-
0 4 - 2 5 - 0 8
h
-
3
6
+
3
7
2
6
0
-
2
_
3
6
2
6
0
/
34.04
[1.340]
1.02
[.040]
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S, D, G - flange & leads: 1.14 0.38 micron [45 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
9 of 11
Rev. 05.1, 2009-02-24
PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-37260-2
2X 12.70
[.500]
45° X 2.031
[.080]
C
L
4.83±0.50
[.190±.020]
D
13.72
[.540]
C
+0.10
–0.15
+.004
L
LID 13.21
[.520
]
23.37±0.51
[.920±.020]
–.006
G
+0.381
–0.127
4X R0.508
+.015
–.005
[R.020
]
LID 22.35±0.23
[.880±.009]
4.11±0.38
[.162±.015]
0.0381 [.0015] -A-
- 3 6 + 3 7 2 6 0 - 2 _ 3 7 2 6 0 /0 4 - 2 5 - 0 8
h
1.02
[.040]
SPH 1.57
[.062]
FLANGE 23.11
[.910]
S
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S, D, G - flange & leads: 1.14 0.38 micron [45 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
10 of 11
Rev. 05.1, 2009-02-24
PTFA212001E/F
Confidential, Limited Internal Distribution
Revision History:
PreviousVersion:
2009-02-24
Data Sheet
2007-12-05, Data Sheet 2006-06-12, Preliminary Data Sheet)
(
Page
1, 2, 9, 10
1, 2
Subjects (major changes since last revision)
Update product to V4, with new package technologies. Update package outline diagrams.
Update gain specifications.
Fixed typing error
8
We Listen toYour Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
®
GOLDMOS is a registered trademark of Infineon Technologies AG.
Edition 2009-02-24
Published by
InfineonTechnologies AG
81726 Munich, Germany
© 2009 InfineonTechnologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 05.1, 2009-02-24
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