PTFA220081M_技术文档

PTFA220081M

Confidential, Limited Internal Distribution

High Power RF LDMOS Field Effect Transistor

8 W, 700 – 2200 MHz

Description

The PTFA220081M an unmatched 8-watt LDMOS FET suitable for

power ampliﬁers applications with frequencies from 700 MHz to 2200

MHz. This LDMOS transistor offers excellent gain, efﬁciency and

linearity performance in a small overmolded plastic package.

PTFA220081M

Package PG-SON-10

Features

Two-tone Drive-up

V_DD= 28 V, I_DQ= 100 mA,

ƒ₁= 939.5 MHz, ƒ₂= 940.5 MHz

•

Typical two-carrier WCDMA performance,

8 dB PAR

- P = 33 dBm Avg

OUT

- ACPR = –40 dBc

-10

-20

-30

-40

-50

-60

50

40

30

20

10

0

Typical CW performance, 940 MHz, 28 V

- P

= 40 dBm

OUT

Efficiency

- Efﬁciency = 59%

- Gain = 20 dB

Typical CW performance, 2140 MHz, 28 V

- P

= 40 dBm

IMD 3rd

IMD 5th

OUT

- Efﬁciency = 50%

- Gain = 15 dB

•

Capable of handling 10:1 VSWR @ 28 V, 8 W

(CW) output power

Integrated ESD protection : Human Body Model,

Class 2 (minimum)

34

35

36

37

38

39

40

41

•

Excellent thermal stability

Output Power, PEP (dBm)

Pb-free and RoHS compliant

RF Characteristics

Two-tone Measurements (not subject to production test – veriﬁed by design / characterization in Inﬁneon test ﬁxture)

V

= 28 V, I

= 100 mA, P

= 8 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz

DD

DQ

OUT

Characteristic

Gain

Symbol

Min

—

Typ

17

Max

—

Unit

dB

G

ps

Drain Efﬁciency

hD

—

38

—

%

Intermodulation Distortion

IMD

—

–31

—

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 17

Rev. 04, 2010-06-09

PTFA220081M

Confidential, Limited Internal Distribution

RF Characteristics (cont.)

Two-tone Measurements (not subject to production test – veriﬁed by design / characterization in Inﬁneon test ﬁxture)

V

= 28 V, I

= 100 mA, P = 8 W PEP, ƒ = 940 MHz, tone spacing = 1 MHz

OUT

DD

DQ

Characteristic

Gain

Symbol

Min

—

Typ

20.7

39

Max

—

Unit

dB

G

ps

Drain Efﬁciency

hD

IMD

IRL

—

%

Intermodulation Distortion

Input Return Loss

—

–30

20

—

dBc

dB

—

DC Characteristics

Characteristic

Conditions

Symbol

Min

65

Typ

—

Max

—

Unit

V

Drain-Source Breakdown Voltage

Drain Leakage Current

On-State Resistance

V

GS

V

DS

V

GS

V

DS

V

GS

= 0 V, I = 10 µA

V

(BR)DSS

DS

= 28 V, V

= 0 V

I

—

1.0

—

µA

W

GS

DSS

= 10 V, V = 0.1 A

R

—

1.10

2.5

—

DS

DS(on)

Operating Gate Voltage

Gate Leakage Current

= 28 V, I

= 100 mA

V

2.0

—

3.0

1.0

V

DQ

GS

= 10 V, V = 0 V

I

µA

DS

GSS

Maximum Ratings

Parameter

Symbol

Value

65

Unit

V

Drain-Source Voltage

Gate-Source Voltage

Junction Temperature

Storage Temperature Range

V

DSS

V

–0.5 to +12

175

V

GS

T

°C

J

T

–65 to +150

4.2

°C

STG

Thermal Resistance (TCASE = 70°C, 8 W DC )

R

°C/W

qJC

Moisture Sensitivity Level

Level

Test Standard

Package Temperature

Unit

3

IPC/JEDEC J-STD-020

260

°C

Ordering Information

Type

Package Outline

Package Description

Shipping

PTFA220081M V4

PG-SON-10

Molded plastic, SMD

Tape & Reel, 500 pcs

Data Sheet

2 of 17

Rev. 04, 2010-06-09

PTFA220081M

Confidential, Limited Internal Distribution

Typical Performance, 940 MHz

Two-carrier WCDMA 3GPP

V_DD= 28 V, I_DQ= 100 mA, ƒ = 940 MHz

3GPP WCDMA, P/AR = 8:1, 10 MHz carrier

spacing, BW 3.84 MHz

Two-carrier WCDMA 3GPP Drive-up

V_DD= 28 V, I_DQ= 100 mA, ƒ = 940 MHz

3GPP WCDMA, P/AR = 8:1, 10 MHz carrier

spacing, BW 3.84 MHz

21.5

60

50

40

30

20

10

0

-10

-20

-30

-40

-50

55

45

35

25

15

5

Efficiency

Gain

21.0

20.5

20.0

19.5

19.0

IMD Up

IMD Low

ACPR

Efficiency

29 30 31 32 33 34 35 36 37 38 39

Output Power (dBm)

30 31 32 33 34 35 36 37 38 39

Output Power (dBm)

Power Sweep, CW

Gain & Efficiency vs. Output Power

V_DD= 28 V, I_DQ= 100 mA

CW

Gain & Efficiency vs. Output Power & VDD

I_DQ= 100 mA, ƒ = 940 MHz

20.8

20.4

20.0

19.6

19.2

18.8

70

60

50

40

30

20

22.0

21.5

21.0

20.5

20.0

19.5

19.0

70

60

50

40

30

20

10

V

DD = 24 V

DD = 28 V

DD = 32 V

Gain

Efficiency

920 MHz

940 MHz

960 MHz

Efficiency

32 33 34 35 36 37 38 39 40 41 42

Output Power (dBm)

34

35

36

37

38

39

40

41

Output Power (dBm)

Data Sheet

3 of 17

Rev. 04, 2010-06-09

PTFA220081M

Confidential, Limited Internal Distribution

Typical Performance, 940 MHz (cont.)

Two-toneDrive-up

V_DD= 28 V, I_DQ= 150 mA,

ƒ₁= 939.5 MHz, ƒ₂= 940.5 MHz

Two-toneGain& Input Return Loss

V_DD= 28 V, IDQ = 100 mA, Spacing = 100 kHz,

PEP = 8 W

22

50

40

30

20

10

21.0

20.5

20.0

19.5

19.0

18.5

18.0

17.5

17.0

-6

-9

Gain

IRL

Gain

21

20

19

18

-12

-15

-18

-21

-24

-27

-30

Efficiency

33

34

35

36

37

38

39

40

41

880

900

920

940

960

980

1000

Output Power, PEP (dBm)

Frequency (MHz)

Broadband Circuit Impedance

Z = 50 W

0

D

Z Source

Z Load

G

S

Frequency

Z Source W

Z Load W

MHz

869

R

jX

R

jX

1.54

1.49

1.59

1.61

1.91

2.11

2.45

2.30

7.20

6.60

5.70

5.10

14.11

14.91

13.83

10.83

13.34

5.59

9.10

8.70

9.10

10.70

9.80

6.20

5.20

5.10

5.60

894

920

940

960

1930

1990

2110

2170

–2.10

–1.70

–1.00

4.21

4.43

4.25

Data Sheet

4 of 17

Rev. 04, 2010-06-09

PTFA220081M

Confidential, Limited Internal Distribution

Reference Circuit, 920 – 960 MHz

PORT

3

R103

2000 Ohm

S5

8

4

1

In

Out

NC

6

NC

2

C103

1000 pF

5

7

3

TL104

C102

1000 pF

V

DD

R104

10 Ohm

TL106

TL105

TL108

S3

3

1

2

4

S2

R102

1200 Ohm

C101

1000 pF

L1

22 nH

R106

510 Ohm

S4

2

3

C

4

1

B

E

TL109

R101

1300 Ohm

R107

10 Ohm

C105

68 pF

R105

1.3 Ohm

TL113

TL110

TL102

2

TL101

TL103

TL107

TL114

TL111

2 1

TL112

3

1

2

1

2

1

GATE_DUT

a080304m_960 MHz_bdin_06-03-2010

RF_IN

3

4

C106

5.6 pF

C107

16 pF

C104

16 pF

Reference circuit input schematic for ƒ = 920 – 960 MHz

TL224

TL218

C205

TL205

TL204

2

1

3

TL206

TL225

TL213

TL216

4710000 pF

2

1

3

TL217

C204

10000000 pF

TL223

2

1

3

C202

68 pF

V

DD

TL202

2

1

3

TL203

TL214

TL201

TL215

3

2

1

2

1

a080304m_960 MHz_bdout_06-03-2010

3

TL207

R201

0 Ohm

TL208

TL212

C203

68 pF

TL220

TL219

TL211 TL209

TL222

TL210

TL221

1 2

3

2

1

DRAIN_DUT

RF_OUT

3

C201

3.6 pF

Reference circuit output schematic for ƒ = 920 – 960 MHz

Data Sheet

5 of 17

Rev. 04, 2010-06-09

PTFA220081M

Confidential, Limited Internal Distribution

Reference Circuit, 920 – 960 MHz (cont.)

Electrical Characteristics at 960 MHz

Transmission

Electrical

Dimensions: mm

Dimensions: mils

Line

Characteristics

Input

TL101

TL102

TL103

TL104

TL105

TL106

TL107

TL108

TL109

TL110

TL111, TL112

TL113

TL114

0.004 λ, 51.98 W

0.024 λ, 51.98 W

0.011 λ, 51.98 W

W1 = 1.087, W2 = 1.087, W3 = 0.813

W = 1.087, L = 4.445

W1 = 43, W2 = 43, W3 = 32

W = 43, L = 175

W = 1.087, L = 2.057

W = 43 L = 81

W = 1.524

W = 60

0.008 λ, 54.17 W

0.027 λ, 41.75 W

0.010 λ, 25.04 W

0.003 λ, 41.75 W

0.007 λ, 41.75 W

W = 1.016, L = 1.524

W = 40, L = 60

W = 1.524, L = 5.080

W = 60, L = 200

W = 3.048, L = 1.778

W = 120, L = 70

W = 1.524, L = 0.508

W = 60, L = 20

W = 1.524, L = 1.270

W = 60, L = 50

W1 = 3.048, W2 = 0.762, W3 = 3.048, W4 = 0.762

W1 = 1.087, W2 = 1.087, W3 = 1.016

W = 1.087, L = 3.264

W1 = 120, W2 = 30, W3 = 120, W4 = 30

W1 = 43, W2 = 43, W3 = 40

W = 43, L = 129

0.005 λ, 51.98 W

0.017 λ, 51.98 W

0.070 λ, 51.98 W

W = 1.087, L = 13.259

W = 43, L = 522

Output

TL201

TL202, TL225

TL203

TL204

TL205

TL206

TL207

TL208

TL209

TL210

TL211

TL212

TL213

TL214

TL215

TL216

TL217

TL218

TL219

TL220

TL221

TL222

TL223

TL224

0.008 λ, 41.75 W

0.007 λ, 47.12 W

0.060 λ, 47.12 W

W1 = 1.524, W2 = 1.524, W3 = 1.524

W1 = 1.270, W2 = 1.270, W3 = 1.270

W = 1.270, L = 11.361

W1 = 60, W2 = 60, W3 = 60

W1 = 50, W2 = 50, W3 = 50

W = 50, L = 447

W1 = 0.020, W2 = 0.020, Offset = 0.007

W = 20.119, L = 1.270

W1 = 20, W2 = 780, Offset = 280

W = 792, L = 50

0.007 λ, 4.74 W

W1 = 0.001, W2 = 0.001, Offset = 0.011

W = 1.524, L = 0.508

W1 = 1, W2 = 50, Offset = 416

W = 60, L = 20

0.003 λ, 41.75 W

0.008 λ, 41.75 W

0.004 λ, 25.04 W

W = 1.524, L = 1.524

W = 60, L = 60

W1 = 3.048, W2 = 3.048, W3 = 0.762

W1 = 1.087, W2 = 3.048

W1 = 120, W2 = 120, W3 = 30

W1 = 43, W2 = 120

0.010 λ, 25.04 W

0.007 λ, 63.89 W

W = 3.048, L = 1.778

W = 120, L = 70

W = 0.762, L = 1.270

W = 30, L = 50

W1 = 0.001, W2 = 0.005, Offset = -0.002

W = 1.524, L = 8.204

W1 = 1, W2 = 208, Offset = -79

W = 60, L = 323

0.044 λ, 41.75 W

0.007 λ, 41.75 W

0.007 λ, 47.12 W

0.032 λ, 47.12 W

0.032 λ, 15.92 W

0.016 λ, 51.98 W

0.017 λ, 51.98 W

0.004 λ, 51.98 W

0.104 λ, 51.98 W

0.011 λ, 47.12 W

0.000 λ, 144.35 W

W1 = 1.524, W2 = 1.524, W3 = 1.270

W = 1.270, L = 1.267

W1 = 60, W2 = 60, W3 = 50

W = 50, L = 50

W = 1.270, L = 5.918

W = 50, L = 233

W = 5.283, L = 5.687

W = 208, L = 224

W = 1.087, L = 2.946

W = 43, L = 116

W = 1.087, L = 3.264

W = 43, L = 129

W1 = 1.087, W2 = 1.087, W3 = 0.813

W = 1.087, L = 19.736

W1 = 43, W2 = 43, W3 = 32

W = 43, L = 777

W1 = 1.270, W2 = 1.270, W3 = 2.032

W1 = 0.025, W2 = 0.025, W3 = 0.025

W1 = 50, W2 = 50, W3 = 80

W1 = 1, W2 = 1, W3 = 1

Data Sheet

6 of 17

Rev. 04, 2010-06-09

PTFA220081M

Confidential, Limited Internal Distribution

Reference Circuit, 920 – 960 MHz (cont.)

R101

C103

C101

VDD

C102

C205

R102

C204

C202

S4

R103

S5

R106

S3

R104

S2

L1

R201

R107

R105

DUT

RF_IN

RF_OUT

C203

C105

C106

C104

C201

C107

PTFA220081M_01_CUS

960 MHz

RO4350, .020

(73)

� � �     � � � � � � � � � � �  � �  � �

� � � � � � �  

Reference circuit assembly diagram (not to scale)*

* Gerber Files for this circuit available on request

Data Sheet

7 of 17

Rev. 04, 2010-06-09

PTFA220081M

Confidential, Limited Internal Distribution

Reference Circuit, 920 – 960 MHz (cont.)

Circuit Assembly Information

DUT

PTFA220081M

LDMOS Transistor

PCB

LTN/PTFA220081M–9

^{0.508 mm [.020"] thick,}er = 3.48

Rogers 4350, 1 oz. copper

Component

Description

Suggested Manufacturer

P/N

Input

C101, C102, C103

Chip capacitor, 1000 pF

Chip capacitor, 16 pF

Chip capacitor, 68 pF

Chip capacitor, 5.6 pF

Inductor, 22 nH

Digi-Key

ATC

PCC1772CT-ND

ATC100A160JW150X

ATC100A680JW150X

ATC100A5R6CW150X

ATC0805WL22JT

P1.3KGCT-ND

P1.2KGCT-ND

P2.0KECT-ND

P10ECT-ND

C104, C107

C105

C106

L1

ATC

R101

R102

R103

R104

R105

R106

R107

S2

Resistor, 1300 W

Resistor, 1200 W

Resistor, 2000 W

Resistor, 10 W

Digi-Key

Murata

Resistor, 1.3 W

P1.3GET-ND

Resistor, 510 W

P510ECT-ND

Resistor, 10 W

P10GCT-ND

EMI ﬁlter, 2 - 4 A, 0.1 - 2.2 μF

Potentiometer, 2k W

Transistor

NFM18PS105R0J3

3224W-202ECT-ND

BCP56

S3

Digi-Key

National Semiconductor

S4

S5

Voltage Regulator

LM7805

Output

C201

Chip capacitor, 3.6 pF

Chip capacitor, 68 pF

Capacitor, 10 μF

ATC

ATC100A3R6CW150X

ATC100A680JW150X

587-1352-1-ND

C202, C203

C204

ATC

Digi-Key

C205

Chip capacitor, 4.71 μF

Resistor, 0 W

PCS3475CT-ND

P0.0ECT-ND

R201

Data Sheet

8 of 17

Rev. 04, 2010-06-09

PTFA220081M

Confidential, Limited Internal Distribution

Typical Performance, 2140 MHz

Two-carrier WCDMA 3GPP Drive-up

Two-carrier WCDMA 3GPP

V_DD= 28 V, I_DQ= 100 mA, ƒ = 2140 MHz,

3GPP WCDMA, P/AR = 8:1,

V_DD= 28 V, I_DQ= 100 mA, ƒ = 2140 MHz

3GPP WCDMA, P/AR = 8:1,

10 MHz carrier spacing, BW 3.84 MHz

0

-10

-20

-30

-40

-50

50

40

30

20

10

0

18.0

50

40

30

20

10

0

Gain

17.5

17.0

16.5

16.0

15.5

Efficiency

IMD Up

IMD Low

Efficiency

ACPR

27 28 29 30 31 32 33 34 35 36

Output Power (dBm)

27 28 29 30 31 32 33 34 35 36

Output Power (dBm)

CW

Gain & Efficiency vs. Output Power

V_DD= 28 V, I_DQ= 100 mA, ƒ = 2140 MHz

Gain & Effciency vs. Output Power & VDD

I_DQ= 100 mA, ƒ = 2140 MHz

Gain +85°C

Gain +20°C

Gain -30°C

Efficiency +85°C

Efficiency +20°C

Efficiency -30°C

22

21

20

19

18

17

16

15

14

13

65

60

55

50

45

40

35

30

25

20

18.0

17.5

17.0

16.5

16.0

15.5

60

50

40

30

20

10

Gain

V

DD = 24 V

DD = 28 V

DD = 32 V

Efficiency

32 33 34 35 36 37 38 39 40 41

Output Power (dBm)

32 33 34 35 36 37 38 39 40 41

Output Power (dBm)

Data Sheet

9 of 17

Rev. 04, 2010-06-09

PTFA220081M

Confidential, Limited Internal Distribution

Typical Performance, 2140 MHz (cont.)

Two-toneDrive-up

V_DD= 28 V, I_DQ= 100 mA,

ƒ₁= 2139.5 MHz, ƒ₂= 2140.5 MHz

Two-toneDrive-up

V_DD= 28 V, I_DQ= 100 mA,

ƒ₁= 2139.5 MHz, ƒ₂= 2140.5 MHz

-10

-20

50

40

30

20

10

18.0

17.5

17.0

16.5

16.0

15.5

15.0

50

45

40

35

30

25

20

Gain

-30

Efficiency

-40

IMD3

Efficiency

-50

33

34

35

36

37

38

39

40

41

35

36

37

38

39

40

41

Output Power, PEP (dBm)

Two-toneBroadband

Efficiency& IMD vs. Frequency

Gain & Return Loss vs. Frequency

V_DD= 28 V, I_DQ= 100 mA, Average PEP = 8 W,

Spacing = 100 kHz

V_DD= 28 V, I_DQ= 100 mA, Average PEP = 8 W,

Spacing = 100 kHz

45

40

35

30

25

20

15

10

-15

18

17

16

15

14

13

12

0

-20

-25

-30

-35

-40

-45

-50

Efficiency

-2

Gain

RL

IMD3

-4

-6

-8

IMD5

2200

-10

-12

2040

2080

2120

2160

2200

2240

2040

2080

2120

2160

2240

Frequency (MHz)

Data Sheet

10 of 17

Rev. 04, 2010-06-09

PTFA220081M

Confidential, Limited Internal Distribution

Typical Performance, 2140 MHz (cont.)

Power Sweep, CW

Two-toneGainvs. Output Power

V_DD= 28 V, ƒ₁= 2139.5 MHz, ƒ₂= 2140.5 MHz

Gain & Efficiency vs. Output Power

V_DD= 28 V, I_DQ= 100 mA

18.0

17.5

17.0

16.5

16.0

15.5

15.0

65

55

45

35

25

15

Gain

I_DQ= 120 mA

17.5

I_DQ= 100 mA

17.0

I_DQ= 80 mA

16.5

Efficiency

2110 MHz

2140 MHz

2170 MHz

16.0

33

34

35

36

37

38

39

40

41

31 32 33 34 35 36 37 38 39 40 41

Output Power (dBm)

IntermodulationDistortionvs.

ToneSpacing

IntermodulationDistortionvs.

Output Power

V_DD= 28 V, I_DQ= 100 mA, ƒ = 2140 MHz,

PEP = 8 W

V_DD= 28 V, I_DQ= 100 mA,

ƒ₁= 2139.5 MHz, ƒ₂= 2140.5 MHz

-20

-30

-40

-50

-60

-25

-30

-35

-40

-45

-50

-55

3rd Order

5th

3rd Order

5th

7th

0

10

20

30

40

50

60

70

80

35

36

37

38

39

40

41

Output Power, PEP (dBm)

Tone Spacing (MHz)

Data Sheet

11 of 17

Rev. 04, 2010-06-09

PTFA220081M

Confidential, Limited Internal Distribution

Reference Circuit, 2110 – 2170 MHz

PORT

3

R104

2000 Ohm

S5

8

4

1

In

Out

NC

6

NC

2

C103

1000 pF

5

7

3

TL104

C101

1000 pF

R102

10 Ohm

VDD

TL105

TL106

TL108

S3

3

1

2

4

S2

R103

1200 Ohm

C102

1000 pF

L1

22 nH

R106

510 Ohm

S4

2

C

1

4

B

3

E

TL109

R101

1300 Ohm

R105

C104

C111

10 Ohm

6.2 pF

C108

C106

12 pF

4.1 pF

TL101

TL102

TL115

2

TL103

TL110

2

TL107

TL111 TL114

TL113

2 1

TL112

1

3

1

3

1

2

1

RF_IN

GATE_DUT

a080304m_2170 MHz_bdin_06-03-2010

3

4

C110

6.2 pF

C105

6.2 pF

C107

3.6 pF

C109

0.6 pF

Reference circuit input schematic for ƒ = 2110 – 2170 MHz

TL205

TL216

TL215

TL223

TL224

TL217

TL219

2

1

3

C205

10000000 pF

TL226

2

1

TL204

3

TL225

VDD

C204

10 pF

TL213

2

1

3

TL214

TL218

TL212

TL220

3

2

1

2

1

3

TL210

R201

0 Ohm

TL211

TL222

C202

0.3 pF

C201

12 pF TL207

TL201

TL202

TL209

TL206

TL221

TL208

TL203

3

2

1

2

1

2

a080304m_2170 MHz_bdout_06-03-2010

DRAIN_DUT

RF_OUT

3

C203

3.6 pF

Reference circuit output schematic for ƒ = 2110 – 2170 MHz

Data Sheet

12 of 17

Rev. 04, 2010-06-09

PTFA220081M

Confidential, Limited Internal Distribution

Reference Circuit, 2110 – 2170 MHz (cont.)

Electrical Characteristics at 2170 MHz

Transmission

Electrical

Dimensions: mm

Dimensions: mils

Line

Characteristics

Input

TL101

TL102

TL103

TL104

TL105

TL106

TL107

TL108

TL109

TL110

TL111, TL113

TL112

TL114

TL115

0.054 λ, 51.98 W

0.150 λ, 51.98 W

0.027 λ, 51.98 W

W = 1.087, L = 4.509

W = 43, L = 178

W = 1.087, L = 12.548

W = 43, L = 494

W = 1.087, L = 2.261

W = 43, L = 89

W = 1.524

W = 60

0.062 λ, 41.75 W

0.018 λ, 54.17 W

0.022 λ, 25.04 W

0.006 λ, 41.75 W

0.015 λ, 41.75 W

W = 1.524, L = 5.080

W = 60, L = 200

W = 1.016, L = 1.524

W = 40, L = 60

W = 3.048, L = 1.778

W = 120, L = 70

W = 1.524, L = 0.508

W = 60, L = 20

W = 1.524, L = 1.270

W = 60, L = 50

W1 = 3.048, W2 = 0.762, W3 = 3.048, W4 = 0.762

W1 = 1.087, W2 = 1.087, W3 = 1.016

W1 = 1.087, W2 = 1.016, W3 = 1.087, W4 = 1.016

W = 1.087, L = 2.311

W1 = 120, W2 = 30, W3 = 120, W4 = 30

W1 = 43, W2 = 43, W3 = 40

W1 = 43, W2 = 40, W3 = 43, W4 = 40

W = 43, L = 91

0.012 λ, 51.98 W

0.028 λ, 51.98 W

W1 = 1.087, W2 = 1.016, W3 = 1.087, W4 = 1.016

W1 = 43, W2 = 40, W3 = 43, W4 = 40

Output

TL201

TL202

TL203

TL204

TL205

TL206

TL207

TL208

TL209

TL210

TL211

TL212

TL213

TL214

TL215

TL216

TL217

TL218

TL219

TL220

TL221

TL222

TL223

0.022 λ, 25.04 W

0.010 λ, 25.04 W

W = 3.048, L = 1.778

W = 120, L = 70

W1 = 3.048, W2 = 3.048, W3 = 0.762

W1 = 1.087, W2 = 3.048

W1 = 120, W2 = 120, W3 = 30

W1 = 43, W2 = 120

0.071 λ, 47.12 W

0.072 λ, 15.92 W

0.230 λ, 51.98 W

0.039 λ, 51.98 W

0.012 λ, 51.98 W

0.032 λ, 51.98 W

0.006 λ, 41.75 W

0.018 λ, 41.75 W

0.015 λ, 47.12 W

0.035 λ, 47.12 W

W = 1.270, L = 5.918

W = 50, L = 233

W = 5.283, L = 5.687

W = 208, L = 224

W = 1.087, L = 19.202

W = 43, L = 756

W = 1.087, L = 3.264

W = 43, L = 129

W1 = 1.087, W2 = 1.087, W3 = 1.016

W = 1.087, L = 2.642

W1 = 43, W2 = 43, W3 = 40

W = 43, L = 104

W = 1.524, L = 0.508

W = 60, L = 20

W = 1.524, L = 1.524

W = 60, L = 60

W1 = 1.524, W2 = 1.524, W3 = 1.524

W1 = 1.270, W2 = 1.270, W3 = 1.270

W = 1.270, L = 2.896

W1 = 60, W2 = 60, W3 = 60

W1 = 50, W2 = 50, W3 = 50

W = 50, L = 114

W1 = 0.020, W2 = 0.020, Offset = 0.007

W = 20.119, L = 1.270

W1 = 20, W2 = 780, Offset = 280

W = 792, L = 50

0.017 λ, 4.74 W

W1 = 0.001, W2 = 0.005, Offset = -0.002

W = 1.524, L = 8.204

W1 = 1, W2 = 208, Offset = -79

W = 60, L = 323

0.099 λ, 41.75 W

0.015 λ, 47.12 W

0.015 λ, 41.75 W

0.008 λ, 51.98 W

0.015 λ, 63.89 W

W = 1.270, L = 1.267

W = 50, L = 50

W1 = 1.524, W2 = 1.524, W3 = 1.270

W1 = 1.087, W2 = 1.087, W3 = 0.635

W = 0.762, L = 1.270

W1 = 60, W2 = 60, W3 = 50

W1 = 43, W2 = 43, W3 = 25

W = 30, L = 50

W1 = 0.001, W2 = 0.001, Offset = 0.011

W1 = 1, W2 = 50, Offset = 416

Table continued next page

Data Sheet

13 of 17

Rev. 04, 2010-06-09

PTFA220081M

Confidential, Limited Internal Distribution

Reference Circuit, 2110 – 2170 MHz (cont.)

Electrical Characteristics at 2170 MHz (cont.)

Transmission

Electrical

Dimensions: mm

Dimensions: mils

Line

TL224

TL225

TL226

Characteristics

0.015 λ, 47.12 W

0.111 λ, 47.12 W

0.015 λ, 47.12 W

W1 = 1.270, W2 = 1.270, W3 = 1.270

W = 1.270, L = 9.225

W1 = 50, W2 = 50, W3 = 50

W = 50, L = 363

W1 = 1.270, W2 = 1.270, W3 = 1.270

W1 = 50, W2 = 50, W3 = 50

Reference Circuit, 2110 – 2170 MHz (cont.)

R101

C103

C101

C102

VDD

R103

S5

S4

C205

R104

R106

S3

C204

R102

S2

1

R201

R105

C202

C104 C111

RF_OUT

DUT

RF_IN

C106

C107

C201

C203

C108

C105

C109 C110

PTFA220081M_01_CUS

2170 MHz

RO4350, .020

(73)

� � �      � � � � � � � � � �   � �  � �

� � � � � � �  

Reference circuit assembly diagram (not to scale)*

* Gerber Files for this circuit available on request

Data Sheet

14 of 17

Rev. 04, 2010-06-09

PTFA220081M

Confidential, Limited Internal Distribution

Reference Circuit, 2110 – 2170 MHz (cont.)

Circuit Assembly Information

DUT

PTFA220081M

LDMOS Transistor

PCB

LTN/PTFA220081M

^{0.508 mm [.020"] thick,}er = 3.48

Rogers 4350, 1 oz. copper

Component

Description

Suggested Manufacturer

P/N

Input

C101, C102, C103

Chip capacitor, 1000 pF

Chip capacitor, 6.2 pF

Chip capacitor, 12 pF

Chip capacitor, 3.6 pF

Chip capacitor, 4.1 pF

Chip capacitor, 0.6 pF

Inductor, 22 nH

ATC

PCC1772CT-ND

ATC100A6R2CW150X

ATC100A120FJW150X

ATC100A3R6CW150X

ATC100A4R1CW150X

ATC100A0R6CW150X

ATC0805WL22JT

P1.3KGCT-ND

C104, C105, C110, C111

ATC

C106

C107

C108

C109

L1

ATC

R101

R102

R103

R104

R105

R106

S2

Resistor, 1300 W

Digi-Key

National Semiconductor

Resistor, 10 W

P10ECT-ND

Resistor, 1200 W

P1.2KGCT-ND

Resistor, 2000 W

P2.0KECT-ND

Resistor, 10 W

P10GCT-ND

Resistor, 510 W

P510ECT-ND

EMI ﬁlter, 2 - 4 A, 0.1 - 2.2 μF

Potentiometer, 2k W

Transistor

NFM18PS105R0J3

3224W-202ECT-ND

BCP56

S3

S4

S5

Voltage Regulator

LM7805

Output

C201

C202

C203

C204

C205

R201

Chip capacitor, 12 pF

Chip capacitor, 0.3 pF

Chip capacitor, 3.6 pF

Chip capacitor, 10 pF

Capacitor, 10 μF

ATC

ATC100A120CW150X

ATC100A0R3CW150X

ATC100A3R6CW150X

ATC100A100CW150X

587-1352-1-ND

ATC

Digi-Key

Resistor, 0 W

P0.0ECT-ND

Data Sheet

15 of 17

Rev. 04, 2010-06-09

PTFA220081M

Confidential, Limited Internal Distribution

Package Outline Speciﬁcations

Package PG-SON-10

0.54

[.021] 2 PLACES

5X .320

[.0126] 2 PLACES

4.00

[.157]

6

7

8

9

10

.815

[.0321]

S

4.00

[.157]

2.97

[.117]

2.37

[.093]

5X .515

[.0203] 2 PLACES

5

4

3

2

1

INDEX

MARKING

INDEX

MARKING

4X 0.65

[.026] 2 PLACES

TOP VIEW

0.30

[.012]

3.40

[.134]

BOTTOM VIEW

0.38

1.42

[.056]

[.015] BOTH SIDES

PG-SON-10_po_02-19-2010

0.05 [.002]

SIDE VIEW

Diagram Notes—unless otherwise speciﬁed:

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Primary dimensions are mm. Alternate dimensions are inches.

3. All tolerances ± 0.1 [.004] unless speciﬁed otherwise.

4. Package dimension: 4.00 mm x 4.00 mm x 1.42 mm.

5. Pins: S = source, 1 – 5 = gate, 6 – 10 = drain.

6. NiPdAu plating (gold top layer): 0.025 – 0.127 micron [1 – 5 microinch].

Find the latest and most complete information about products and packaging at the Inﬁneon Internet page

http://www.inﬁneon.com/rfpower

Data Sheet

16 of 17

Rev. 04, 2010-06-09

PTFA220081M V4

Conﬁdential, Limited Internal Distribution

Revision History:

2010-06-09

Data Sheet

Previous Version:

2010-04-19, Advance Speciﬁcation

Page

All

Subjects (major changes since last revision)

Data Sheet reﬂects released product speciﬁcations

We Listen to Your Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to:

highpowerRF@inﬁneon.com

To request other information, contact us at:

+1 877 465 3667 (1-877-GO-LDMOS) USA

or +1 408 776 0600 International

Edition 2010-06-09

Published by

Inﬁneon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.

With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the

application of the device, Inﬁneon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Inﬁneon Technologies Ofﬁce (www.inﬁneon.com/rfpower).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question,

please contact the nearest Inﬁneon Technologies Ofﬁce.

Inﬁneon Technologies components may be used in life-support devices or systems only with the express written approval of

Inﬁneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support

device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended

to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be endangered.

Data Sheet

17 of 17

Rev. 04, 2010-06-09


型号：	PTFA220081M
厂家：	Infineon
描述：	High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz 高功率射频LDMOS场效应晶体管8 W， 700-2200兆赫晶体晶体管场效应晶体管射频
文件：	总17页 (文件大小：1119K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PTFA220081M [INFINEON]

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