PTFA220121M [INFINEON]
High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz; 高功率射频LDMOS场效应晶体管12 W， 700-2200兆赫
| 型号： | PTFA220121M |
| 厂家： | 
Infineon |
| 描述： | High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz |
| 文件： | 总19页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTFA220121M
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect Transistor
12 W, 700 – 2200 MHz
Description
The PTFA220121M is an unmatched 12-watt LDMOS FET intended
for power amplifier applications in the 700 to 2200 MHz. This LDMOS
device offers excellent gain, efficiency and linearity performance in
a small overmolded plastic package.
PTFA220121M
Package PG-SON-10
Features
Two-tone Drive-up
VDD = 28 V, IDQ = 150 mA,
•
•
•
•
Typical two-carrier WCDMA performance at 2140
MHz, 8 dB PAR
ƒ1 = 876.95 MHz, ƒ2 = 877.05 MHz
- P
= 33 dBm Avg
OUT
-10
-15
-20
-25
-30
-35
-40
-45
-50
50
45
40
35
30
25
20
15
10
- ACPR = –45.5 dBc
Typical two-carrier WCDMA performance at 877
MHz, 8 dB PAR
- P
= 33 dBm Avg
OUT
Efficiency
- ACPR = –44.5 dBc
Typical CW performance, 2140 MHz, 28 V
- P
= 41.6 dBm
OUT
- Efficiency = 53.5%
- Gain = 15.5 dB
IMD3
Typical CW performance, 877 MHz, 28 V
- P
= 41.8 dBm
OUT
- Efficiency = 60%
- Gain = 19.9 dB
33 34 35 36 37 38 39 40 41 42
Output Power, PEP (dBm)
•
•
Capable of handling 10:1 VSWR @ 28 V, 12 W
(CW) output power
Integrated ESD protection : Human Body Model,
Class 2 (minimum)
•
•
Excellent thermal stability
Pb-free and RoHS compliant
RF Characteristics
Two-tone Measurements (not subject to production test - verified by design / characterization in Infineon test fixture)
V
DD
= 28 V, I
= 150 mA, P
= 12 W PEP, ƒ = 877 MHz, tone spacing = 1 MHz
DQ
OUT
Characteristic
Gain
Symbol
Min
20
Typ
20.5
42.5
–33
Max
—
Unit
dB
G
ps
Drain Efficiency
ηD
41
—
%
Intermodulation Distortion
IMD
—
–32
dBc
All published data at T
= 25°C unless otherwise indicated
*See Infineon distributor for future availability.
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
RF Characteristics
Two-tone Measurements (not subject to production test - verified by design / characterization in Infineon test fixture)
V
DD
= 28 V, I
= 150 mA, P = 9.3 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
DQ
OUT
Characteristic
Gain
Symbol
Min
—
Typ
16.2
37
Max
—
Unit
dB
G
ps
Drain Efficiency
ηD
—
—
%
Intermodulation Distortion
IMD
—
–29.4
—
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
V
GS
V
DS
V
GS
V
DS
V
GS
= 0 V, I = 10 µA
V
(BR)DSS
DS
= 28 V, V = 0 V
I
—
1.0
—
µA
Ω
GS
DSS
= 10 V, V = 0.1 A
R
—
2.01
2.5
—
DS
DS(on)
Operating Gate Voltage
Gate Leakage Current
= 28 V, I = 150 mA
V
2.0
—
3.0
1.0
V
DQ
GS
= 10 V, V = 0 V
I
µA
DS
GSS
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
V
DSS
V
–0.5 to +12
175
V
GS
T
J
°C
T
STG
–40 to +150
3.4
°C
Thermal Resistance (T
= 70°C, 12 W CW)
R
θJC
°C/W
CASE
Moisture Sensitivity Level
Level
Test Standard
Package Temperature
Unit
3
IPC/JEDEC J-STD-020
260
°C
Ordering Information
Type and Version
Package Outline
Package Description
Shipping
PTFA220121M V4 V4 R250 PG-SON-10
Molded plastic, SMD
Tape & Reel, 500 pcs
*See Infineon distributor for future availability.
Data Sheet
2 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Typical Performance, 877 MHz (data taken in Infineon test fixture)
Two-carrier WCDMA 3GPP Drive-up
VDD = 28 V, IDQ = 150 mA, ƒ = 877 MHz
Two-carrier WCDMA 3GPP
VDD = 28 V, IDQ = 150 mA, ƒ = 877 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
0
-5
60
55
50
45
40
35
30
25
20
15
10
23
22
21
20
19
18
60
50
40
30
20
10
IMD Up
-10
-15
-20
-25
-30
-35
-40
-45
-50
Gain
Efficiency
IMD Low
Efficiency
ACPR
29
31
33
35
37
39
41
32 33 34 35 36 37 38 39 40 41
Output Power (dBm)
Output Power (dBm)
Two-tone Drive-up
CW Performance
VDD = 28 V, IDQ = 150 mA,
Gain & Eff. vs. Output Power & VDD
ƒ1 = 876.95 MHz, ƒ2 = 877.05 MHz
IDQ = 150 mA,
ƒ = 877 MHz
22
21
20
19
18
50
40
30
20
10
22.0
21.5
21.0
20.5
20.0
19.5
19.0
70
60
50
40
30
20
10
VDD = 32 V
V
V
DD = 28 V
Gain
DD = 24 V
Gain
Efficiency
Efficiency
33 34 35 36 37 38 39 40 41 42
Output Power, PEP (dBm)
30
32
34
36
38
40
42
44
Output Power (dBm)
Data Sheet
3 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Typical Performance, 877 MHz (cont.)
Small Signal CW
Gain & Input Return Loss
Intermodulation Distortion
vs. Output Power
VDD = 28 V, IDQ = 150 mA
VDD = 28 V, IDQ = 150 mA,
ƒ1 = 876.95 MHz, ƒ2 = 877.05 MHz
-20
22
20
18
16
14
12
0
3rd Order
Gain
-5
-30
-10
-15
-20
-25
5th
-40
-50
IRL
7th
-60
727
827
927
1027
33 34 35 36 37 38 39 40 41 42
Frequency (MHz)
Output Power, PEP (dBm)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.15 A
0.30 A
0.60 A
0.75 A
0.90 A
1.05 A
1.20 A
-20
0
20
40
60
80
100
Case Temperature (°C)
Data Sheet
4 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Frequency
MHz
720
Z Source Ω
Z Load Ω
R
jX
R
jX
1.1
1.0
1.3
1.2
1.4
1.5
1.4
1.6
2.0
2.0
2.2
2.6
2.5
2.0
1.7
2.2
2.5
2.4
1.9
7.7
12.0
12.4
10.8
9.3
9.1
9.1
8.9
5.0
4.7
4.7
4.2
3.8
3.8
3.6
3.3
3.2
3.0
2.7
2.3
4.8
4.0
5.9
6.7
6.7
6.9
6.3
5.3
3.2
2.9
3.0
1.8
1.8
1.9
1.6
0.5
0.5
1.2
1.4
820
6.4
869
5.0
894
3.6
920
3.5
D
940
3.3
Z Source
Z Load
960
2.8
1675
1805
1880
1930
1990
2110
2170
2300
2400
2500
2600
2700
0.3
0.3
G
0.3
S
–0.9
–2.0
–3.1
–2.6
–1.7
–2.5
–4.5
–4.1
–3.1
Z0 = 50 Ω
Z Source
720 MHz
Z Load
720 MHz
2700 MHz
2700 MHz
Data Sheet
5 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Reference Circuit, 877 MHz
a
2
2
0
1
2
1
m
−
v
4
_
b
d
i
n
_
8
7
7
M
H
z_
0
2
−
2
3
−
2
0
1
0
VDD
28 V
R804
2000Ohm
S5
1
Out
8
4
I
n
NC
NC
C801
1000 pF
5
7
2
3
6
TL108
DCVS
V1
C802
1000 pF
R805
10 Ohm S3
TL110
TL109
TL112
3
3
1
2
4
S2
C803
1000pF
R801
1200Ohm
R803
510 Ohm
L1
22 nH
2
C
S4
4
S
1
B
3
E
R802
1300Ohm
TL113
R102
10 Ohm
C101
68pF
R101
1.3 Ohm
TL114
TL111
TL115
TL116
TL107
2
TL103
TL102
TL105
TL104
2 1
3
1
2
1
2
1
RF_IN
GATE DUT
3
3
3
4
C103
10 pF
TL101
TL106
Er=3.48
H=20 mil
RO/RO4350B1
C104
16pF
C102
20 pF
Reference circuit input schematic for ƒ = 877 MHz
C201
2200000pF
TL209
TL204
TL203
z_ 0 1 − 0 7 − 2 0 1 0
1
TL205
TL202 TL223
3
a
2
2
0
1
2
1
m
−
v
4
_
b
d
o
u
t
_
8
7
7
M
H
2
TL201
TL221
TL222
C202
68 pF
TL226
2
1
3
TL206
TL220
TL219
TL213
3
VDD
2
1
2
1
3
28 V
TL207
R1
0000 Ohm
TL212
TL217
L2
2.7 nH
C204
68 pF
TL225
TL216 TL214
TL218
TL211
TL224
TL215
TL208
TL210
1 2
3
2
1
1
2
DRAIN DUT
RF_OUT
3
3
C203
3.6 pF
C205
8.2 pF
Reference circuit output schematic for ƒ = 877 MHz
Data Sheet
6 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Reference Circuit, 877 MHz (cont.)
R802 C803
C801
C802
C201
C202
R801
S5
S4
R804
R803
S3
S2
L1
R805
R1
DUT
C204
C101
C103
C203
C205
L2
R101 R102
C104 C102
(73)
PTFA220121M
RO4350, .020
a
2
2
0
1
2
1
m
−
v
4
_
C
D
_
8
7
7
M
H
z_
0
1
−
0
7
−
2
0
1
0
Reference circuit assembly diagram (not to scale)*
* Gerber Files for this circuit available on request
Data Sheet
7 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Reference Circuit, 877 MHz (cont.)
Circuit Assembly Information
DUT
PCB
PTFA220121M
LDMOS Transistor
LTN/PTFA220121M–8
0.508 mm [.020"] thick, ε = 3.48
Rogers 4350
1 oz. copper
r
Component
Description
Suggested Manufacturer
P/N
Input
C101
Chip capacitor, 68 pF
Chip capacitor, 20 pF
Chip capacitor, 10 pF
Chip capacitor, 16 pF
Chip capacitor, 1000 pF
Inductor, 22 nH
ATC
ATC100A680JW150X
C102
ATC
ATC100A200JW150X
ATC100A100JW150X
ATC100A160JW150X
PCC1772CT-ND
0805HT-22NX_BG
P1.3ECT-ND
C103
ATC
C104
ATC
C801, C802, C803
Digi-Key
Coilcraft
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Murata
L1
R101
R102, R805
R801
R802
R803
R804
S2
Resistor, 1.3 Ω
Resistor, 10 Ω
P10ECT-ND
Resistor, 1200 Ω
Resistor, 1300 Ω
Resistor, 510 Ω
P1.2KECT-ND
P1.3KECT-ND
P510ECT-ND
Resistor, 2000 Ω
EMI Suppression Capacitor
Potentiometer, 2k Ω
Transistor
P2.0KECT-ND
NFM18PS105R0J3
3224W-202ECT-ND
BCP56
S3
Digi-Key
Infineon Technologies
National Semiconductor
S4
S5
Voltage regulator
LM7805
Output
C201
Chip capacitor, 2.2 µF
Chip capacitor, 68 pF
Chip capacitor, 3.6 pF
Chip capacitor, 8.2 pF
Inductor, 2.7 nH
Digi-Key
ATC
445-1474-2-ND
C202, C204
C203
ATC100A680JW150X
ATC100A3R6CW150X
ATC100A8R2CW150X
0402CS-2N7X_BG
P0.0KECT-ND
ATC
C205
ATC
L2
Coilcraft
Digi-Key
R1
Resistor, 0 Ω
Data Sheet
8 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Reference Circuit, 877 MHz (cont.)
Electrical Characteristics at 877 MHz
Transmission
Line
Electrical
Dimensions: mm
Dimensions: mils
Characteristics
Input
TL101, TL106
TL102
W = 0.000, L = 0.000
W = 1.087, L = 10.262
W1 = 1.087, W2 = 1.087, W3 = 0.813
W = 1.087, L = 0.813
W = 1.524
W = 0, L = 0
0.050 λ, 51.98 Ω
0.004 λ, 51.98 Ω
0.004 λ, 51.98 Ω
W = 43, L = 404
W1 = 43, W2 = 43, W3 = 32
W = 43, L = 32
W = 60
TL103, TL104, TL105
TL107
TL108
TL109
0.007 λ, 54.17 Ω
0.025 λ, 41.75 Ω
0.009 λ, 25.04 Ω
0.002 λ, 41.75 Ω
0.006 λ, 41.75 Ω
W = 1.016, L = 1.524
W = 1.524, L = 5.080
W = 3.048, L = 1.778
W = 1.524, L = 0.508
W = 1.524, L = 1.270
W = 40, L = 60
W = 60, L = 200
W = 120, L = 70
W = 60, L = 20
W = 60, L = 50
TL110
TL111
TL112
TL113
TL114
W1 = 3.048, W2 = 0.762, W3 = 3.048,
W4 = 0.762
W1 = 120, W2 = 30, W3 = 120,
W4 = 30
TL115
TL116
0.016 λ, 51.98 Ω
0.044 λ, 51.98 Ω
W = 1.087, L = 3.264
W = 1.087, L = 9.093
W = 43, L = 129
W = 43, L = 358
Output
TL201
TL202
TL203
TL204
TL205
TL206
TL207
TL208, TL210
TL209
TL211
TL212
TL213
TL214
TL215
TL216
TL217
TL218
TL219
TL220
TL221
TL222
TL223
TL224
TL225
TL226
W1 = 1.270, W2 = 5.283, Offset = –2.007 W1 = 50, W2 = 208, Offset = –79
W1 = 5.283, W2 = 5.283, Offset = 0.000
W1 = 5.283, W2 = 5.283, W3 = 3.023
W = 19.850, L = 1.270
W1 = 208, W2 = 208, Offset = 0
W1 = 208, W2 = 208, W3 = 119
W = 782, L = 50
0.016 λ, 15.92 Ω
0.007 λ, 4.80 Ω
W1 = 19.812, W2 = 19.812, Offset = 7.264 W1 = 780, W2 = 780, Offset = 286
0.066 λ, 47.12 Ω
0.002 λ, 41.75 Ω
0.004 λ, 51.98 Ω
W = 1.270, L = 13.467
W = 50, L = 530
W = 1.524, L = 0.508
W = 60, L = 20
W1 = 1.087, W2 = 1.087, W3 = 0.813
W1 = 43, W2 = 43, W3 = 32
W1 = 1.270, W2 = 1.270, Offset = 10.566 W1 = 50, W2 = 50, Offset = 416
0.089 λ, 51.98 Ω
0.007 λ, 41.75 Ω
0.007 λ, 41.75 Ω
0.004 λ, 25.04 Ω
W = 1.087, L = 18.313
W = 43, L = 721
W = 1.524, L = 1.524
W = 60, L = 60
W1 = 1.524, W2 = 1.524, W3 = 1.524
W1 = 3.048, W2 = 3.048, W3 = 0.762
W1 = 1.087, W2 = 3.048
W = 3.048, L = 1.778
W1 = 60, W2 = 60, W3 = 60
W1 = 120, W2 = 120, W3 = 30
W1 = 43, W2 = 120
W = 120, L = 70
0.009 λ, 25.04 Ω
0.006 λ, 63.89 Ω
0.002 λ, 51.98 Ω
0.040 λ, 41.75 Ω
0.006 λ, 41.75 Ω
0.006 λ, 47.12 Ω
0.035 λ, 47.12 Ω
0.014 λ, 15.92 Ω
0.012 λ, 51.98 Ω
0.016 λ, 51.98 Ω
0.006 λ, 47.12 Ω
W = 0.762, L = 1.270
W = 30, L = 50
W = 1.087, L = 0.356
W = 43, L = 14
W = 1.524, L = 8.204
W = 60, L = 323
W1 = 1.524, W2 = 1.524, W3 = 1.270
W = 1.270, L = 1.191
W1 = 60, W2 = 60, W3 = 50
W = 50, L = 47
W = 1.270, L = 7.290
W = 50, L = 287
W = 5.283, L = 2.667
W = 208, L = 105
W = 43, L = 99
W = 1.087, L = 2.502
W = 1.087, L = 3.264
W = 43, L = 129
W1 = 1.270, W2 = 1.270, W3 = 1.270
W1 = 50, W2 = 50, W3 = 50
Data Sheet
9 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Typical Performance, 2140 MHz (data taken in Infineon test fixture)
Two-carrier WCDMA 3GPP Drive-up
VDD = 28 V, IDQ = 150 mA, ƒ = 2140 MHz
Two-carrier WCDMA 3GPP
VDD = 28 V, IDQ = 150 mA, ƒ = 2140 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
18
17
16
15
14
13
50
40
30
20
10
0
-10
-15
-20
-25
-30
-35
-40
-45
-50
40
35
30
25
20
15
10
5
IMD Up
Efficiency
Gain
IMD Low
37
Efficiency
ACPR
34
0
24
26
28
30
32
34
36
38
32
33
35
36
38
Output Power (dBm)
Output Power (dBm)
Two-tone Drive-up
Two-tone Drive-up
VDD = 28 V, IDQ = 150 mA,
VDD = 28 V, IDQ = 150 mA,
ƒ1 = 2139.05 MHz, ƒ2 = 2140.05 MHz
ƒ1 = 2139.05 MHz, ƒ2 = 2140.05 MHz
-15
-20
-25
-30
-35
-40
60
50
40
30
20
10
18
17
16
15
14
50
40
30
20
10
Gain
Efficiency
Efficiency
IMD3
33 34 35 36 37 38 39 40 41 42 43
Output Power, PEP (dBm)
36
37
38
39
40
41
42
43
Output Power, PEP (dBm)
Data Sheet
10 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Typical Performance, 2140 MHz (cont.)
Small Signal CW
Gain & Input Return Loss
VDD = 28 V, IDQ = 150 mA
Two-tone Broadband
Gain, Efficiency & RL vs. Frequency
VDD = 28V, IDQ = 150 mA, Avg. PEP = 12 W,
tone pacing = 100 kHz
20
18
16
14
12
10
0
70
5
60
-5
-4
Gain
RL
50
-15
-25
-35
-45
-55
Efficiency
-8
40
-12
-16
-20
30
IMD3
Gain
20
IRL
10
1990
2090
2190
2290
2040
2080
2120
2160
2200
2240
Frequency (MHz)
Frequency (MHz)
Intermodulation Distortion
vs. Tone Spacing
Intermodulation Distortion
vs. Output Power
VDD = 28 V, IDQ = 150 mA, ƒ = 2140 MHz,
PEP = 11.22 W
VDD = 28 V, IDQ = 150 mA,
ƒ1 = 2139.05 MHz, ƒ2 = 2140.05 MHz
-25
-30
-35
-40
-45
-50
-55
-10
3rd Order
5th
-20
-30
-40
-50
-60
3rd Order
5th
7th
7th
0
20
40
60
80
100
33 34 35 36 37 38 39 40 41 42 43
Output Power, PEP (dBm)
Tone Spacing (MHz)
Data Sheet
11 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Typical Performance, 2140 MHz (cont.)
CW Performance
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 150 mA, ƒ = 2140 MHz
CW Performance
Gain & Eff. vs. Output Power & VDD
IDQ = 150 mA,
ƒ = 2140 MHz
17.0
16.5
16.0
15.5
15.0
14.5
60
50
40
30
20
10
22
60
50
40
30
20
10
+85°C
+25°C
–30°C
Gain
Efficiency
20
VDD = 32 V
VDD = 28 V
VDD = 24 V
Gain
18
16
14
12
Efficiency
30
32
34
36
38
40
42
30
32
34
36
38
40
42
44
Output Power (dBm)
Output Power (dBm)
Power Sweep, CW
Gain & Efficiency vs. Output Power
Two-tone Gain vs. Output Power
VDD = 28 V, ƒ1 = 2139.05 MHz, ƒ2 = 2140.05 MHz
VDD = 28 V, IDQ = 150 mA, ƒ = 2140 MHz
17.5
17
16
15
14
13
55
45
35
25
15
IDQ = 200 mA
17.0
16.5
16.0
15.5
15.0
Gain
IDQ = 150 mA
IDQ = 100 mA
Efficiency
35
36
37
38
39
40
41
42
43
32 33 34 35 36 37 38 39 40 41 42
Output Power (dBm)
Output Power (dBm)
Data Sheet
12 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Reference Circuit, 2140 MHz
V
28 V
DD
R804
2000Ohm
S5
8
4
1
In
Out
NC
NC
2
5
7
C803
1000 pF
3
6
TL105
C801
1000 pF
DCVS
V1
R805
TL109
TL107
10 Ohm S3
TL106
3
3
1
2
4
S2
C802
1000 pF
R801
1200 Ohm
L1
22 nH
R803
510Ohm
2
C
S4
1
4
S
B
3
E
R802
1300 Ohm
TL110
C106
6.2 pF
C107
6.2 pF
R101
10 Ohm
TL116
TL117
C104
TL112 12 pF
C105
TL113
TL104
2
2
TL102 3. 6 pF TL115
TL108
TL118 TL114
TL111
3
1
3
1
3
2
1
2
1
RF_IN
GATE DUT
3
4
4
C103
3.6 pF
TL101
TL103
Er=3.48
H=20 mil
RO/RO4350B1
C102
6.2 pF
C101
6.2 pF
Reference circuit input schematic for ƒ = 2140 MHz
TL217
TL216 TL215
TL218 TL223
TL219
TL229
TL222
C205
100000pF TL224 TL230
2
1
3
C204
2200000pF
TL228
1
2
3
TL226
C207
12 pF
TL227 TL225
2
1
3
TL214
TL213
TL220
TL221
3
VDD
2
1
2
1
a
2
2
0
1
2
1
m
−
v
4
_
b
d
o
u
t
_
2
1
4
0
_
0
1
−
0
7
−
2
0
1
0
3
28 V
TL206
R201
0000 Ohm
C206
2.7 pF
TL207
TL211
TL231
C208
12 pF
TL210 TL208
TL209
TL212
2
TL204
TL201
TL202
TL205 TL232
TL203
3
3
1
2
1
1
2
1
2
DRAIN DUT
RF_OUT
3
3
4
C203
2.7 pF
C202
2.7 pF
C201
1.7 pF
Reference circuit output schematic for ƒ = 2140 MHz
Data Sheet
13 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Reference Circuit, 2140 MHz (cont.)
C803
C802
R802 C802
C205
R801
S4
S5
C204
R804
C207
R803
S3
R805
S2
R201
L1
C106 C107
R101
C206
DUT
C104
C208
C201
C103
C105
C203
C202
C102 C101
(73)
PTFA220121M
RO4350, .020
Reference circuit assembly diagram (not to scale)*
* Gerber Files for this circuit available on request
Data Sheet
14 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Reference Circuit, 2140 MHz (cont.)
Circuit Assembly Information
DUT
PCB
PTFA220121M
LDMOS Transistor
LTN/PTFA220121M
0.508 mm [.020"] thick, ε = 3.48
Rogers 4350
1 oz. copper
r
Component
Input
Description
Suggested Manufacturer
P/N
C101, C102, C106, Chip capacitor, 6.2 pF
C107
ATC
ATC100A6R2CW150X
C103, C105
Chip capacitor, 3.6 pF
Chip capacitor, 12 pF
Chip capacitor, 1000 pF
Inductor, 22 nH
ATC
ATC100A3R6CW150X
ATC100A120JW150X
PCC1772CT-ND
0805HT-22NX_BG
P10ECT-ND
C104
ATC
C801, C802, C803
Digi-Key
L1
Coilcraft
R101, R805
Resistor, 10 Ω
Digi-Key
R801
Resistor, 1200 Ω
Resistor, 1300 Ω
Resistor, 510 Ω
Digi-Key
P1.2KECT-ND
P1.3KECT-ND
P510ECT-ND
R802
Digi-Key
R803
Digi-Key
R804
Resistor, 2000 Ω
EMI Suppression Capacitor
Potentiometer, 2k Ω
Transistor
Digi-Key
P2.0KECT-ND
NFM18PS105R0J3
3224W-202ECT-ND
BCP56
S2
Murata
S3
Digi-Key
S4
Infineon Technologies
National Semiconductor
S5
Voltage regulator
LM7805
Output
C201
Chip capacitor, 1.7 pF
Chip capacitor, 2.7 pF
Chip capacitor, 2.2 µF
Chip capacitor, 0.1 µF
Chip capacitor, 12 pF
Resistor, 0 Ω
ATC
ATC100A1R7CW150X
ATC100A2R7CW150X
445-1474-2-ND
C202, C203, C206
C204
ATC
Digi-Key
Digi-Key
ATC
C205
PCC104BCT-ND
C207, C208
R201
ATC100A120JW150X
P0.0KECT-ND
Digi-Key
Data Sheet
15 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Reference Circuit, 2140 MHz (cont.)
Electrical Characteristics at 2140 MHz
Transmission
Line
Electrical
Dimensions: mm
Dimensions: mils
Characteristics
Input
TL101, TL103
TL102
0.000 λ, 144.35 Ω
0.019 λ, 51.98 Ω
W = 0.025, L = 0.000
W = 1.087, L = 1.575
W = 1, L = 0
W = 43, L = 62
TL104, TL111
W1 = 1.087, W2 = 0.813, W3 = 1.087,
W4 = 0.813
W1 = 43, W2 = 32, W3 = 43,
W4 = 32
TL105
W = 1.524
W = 60
TL106
TL107
TL108
TL109
TL110
TL112
TL113
TL114
TL115
TL116, TL117
TL118
0.018 λ, 54.17 Ω
0.061 λ, 41.75 Ω
0.022 λ, 25.04 Ω
0.006 λ, 41.75 Ω
0.015 λ, 41.75 Ω
0.039 λ, 51.98 Ω
0.180 λ, 51.98 Ω
0.039 λ, 51.98 Ω
0.009 λ, 25.04 Ω
0.000 λ, 144.35 Ω
0.010 λ, 51.98 Ω
W = 1.016, L = 1.524
W = 1.524, L = 5.080
W = 3.048, L = 1.778
W = 1.524, L = 0.508
W = 1.524, L = 1.270
W = 1.087, L = 3.264
W = 1.087, L = 15.291
W = 1.087, L = 3.302
W1 = 3.048, W2 = 3.048, W3 = 0.762
W = 0.025, L = 0.000
W1 = 1.087, W2 = 1.087, W3 = 0.813
W = 40, L = 60
W = 60, L = 200
W = 120, L = 70
W = 60, L = 20
W = 60, L = 50
W = 43, L = 129
W = 43, L = 602
W = 43, L = 130
W1 = 120, W2 = 120, W3 = 30
W = 1, L = 0
W1 = 43, W2 = 43, W3 = 32
See next page for more Reference Circuit information
Data Sheet
16 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Reference Circuit, 2140 MHz (cont.)
Electrical Characteristics at 2140 MHz
Transmission
Line
Electrical
Dimensions: mm
Dimensions: mils
Characteristics
Output
TL201
TL202
TL203, TL205
TL204
TL206
TL207
TL208
TL209
TL210
TL211
TL212
TL213
TL214
TL215
TL216
TL217
TL218
TL219
TL220
TL221
TL222
TL223
TL224
TL225
TL226
TL227
TL228
TL229
TL230
TL231
TL232
0.161 λ, 51.98 Ω
0.039 λ, 51.98 Ω
0.010 λ, 51.98 Ω
0.075 λ, 51.98 Ω
0.006 λ, 41.75 Ω
0.018 λ, 41.75 Ω
0.009 λ, 25.04 Ω
W = 1.087, L = 13.627
W = 43, L = 537
W = 1.087, L = 3.264
W = 43, L = 129
W1 = 1.087, W2 = 1.087, W3 = 0.813
W = 1.087, L = 6.375
W1 = 43, W2 = 43, W3 = 32
W = 43, L = 251
W = 1.524, L = 0.508
W = 60, L = 20
W = 1.524, L = 1.524
W = 60, L = 60
W1 = 3.048, W2 = 3.048, W3 = 0.762
W1 = 1.087, W2 = 3.048
W1 = 120, W2 = 120, W3 = 30
W1 = 43, W2 = 120
W = 120, L = 70
0.022 λ, 25.04 Ω
0.015 λ, 63.89 Ω
0.012 λ, 51.98 Ω
0.018 λ, 41.75 Ω
0.133 λ, 47.12 Ω
W = 3.048, L = 1.778
W = 0.762, L = 1.270
W = 30, L = 50
W = 1.087, L = 1.041
W = 43, L = 41
W1 = 1.524, W2 = 1.524, W3 = 1.524
W = 1.270, L = 11.186
W1 = 60, W2 = 60, W3 = 60
W = 50, L = 440
W1 = 0.020, W2 = 0.020, Offset = 0.007
W = 19.850, L = 1.270
W1 = 20, W2 = 780, Offset = 286
W = 782, L = 50
0.017 λ, 4.80 Ω
W1 = 0.001, W2 = 0.001, Offset = 0.011
W1 = 0.005, W2 = 0.005, Offset = 0.000
W1 = 1, W2 = 50, Offset = 416
W1 = 5, W2 = 208, Offset = 0
W1 = 0.001, W2 = 0.005, Offset = –0.002 W1 = 1, W2 = 208, Offset = –79
0.098 λ, 41.75 Ω
0.015 λ, 41.75 Ω
0.087 λ, 47.12 Ω
0.071 λ, 15.92 Ω
0.000 λ, 41.75 Ω
0.014 λ, 47.12 Ω
0.009 λ, 47.12 Ω
0.000 λ, 63.89 Ω
0.000 λ, 25.04 Ω
0.017 λ, 47.12 Ω
0.018 λ, 47.12 Ω
0.000 λ, 144.35 Ω
W = 1.524, L = 8.204
W = 60, L = 323
W1 = 1.524, W2 = 1.524, W3 = 1.270
W = 1.270, L = 7.290
W1 = 60, W2 = 60, W3 = 50
W = 50, L = 287
W = 5.283, L = 5.690
W = 208, L = 224
W = 60, L = 0
W = 1.524, L = 0.000
W = 1.270, W2 = 1.270, W3 = 1.191
W = 1.270, W2 = 1.270, W3 = 0.762
W = 0.762, L = 0.000
W = 50, W2 = 50, W3 = 47
W = 50, W2 = 50, W3 = 30
W = 30, L = 0
W = 3.048, L = 0.000
W = 120, L = 0
W = 1.270, L = 1.422
W = 50, L = 56
W1 = 1.270, W2 = 1.270, W3 = 1.524
W = 0.025, L = 0.000
W1 = 50, W2 = 50, W3 = 60
W = 1, L = 0
W1 = 1.087, W2 = 0.813, W3 = 1.087
W4 = 0.813
W1 = 43, W2 = 32, W3 = 43,
W4 = 32
Data Sheet
17 of 19
Rev. 07, 2010-04-15
PTFA220121M
Confidential, Limited Internal Distribution
Package Outline Specifications
Package PG-SON-10
0.54
[.021] 2 PLACES
5X .320
[.0126] 2 PLACES
4.00
[.157]
6
7
8
9
10
.815
[.0321]
S
4.00
[.157]
2.97
[.117]
2.37
[.093]
5X .515
[.0203] 2 PLACES
5
4
3
2
1
INDEX
MARKING
INDEX
MARKING
4X 0.65
[.026] 2 PLACES
TOP VIEW
0.30
[.012]
3.40
[.134]
BOTTOM VIEW
0.38
1.42
[.056]
[.015] BOTH SIDES
PG-SON-10_po_02-19-2010
0.05 [.002]
SIDE VIEW
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances 0.10 [.004] unless specified otherwise.
4. Package dimension: 4.00 mm x 4.00 mm x 1.42 mm.
5. Pins: S = source, 1 – 5 = gate, 6 – 10 = drain.
6. NiPdAu plating (gold top layer): 0.025 – 0.127 micron [1 – 5 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
18 of 19
Rev. 07, 2010-04-15
PTFA220121M V4
Confidential, Limited Internal Distribution
Revision History:
2010-04-15
Data Sheet
2010-02-23, Data Sheet
Previous Version:
Page
Subjects (major changes since last revision)
2
Added moisture sensitivity level table
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
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Edition 2010-04-15
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
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Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
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Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
19 of 19
Rev. 07, 2010-04-15
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