PTFB092707FHV1R0XTMA1 [INFINEON]
Thermally-Enhanced High Power RF LDMOS FET;
| 型号： | PTFB092707FHV1R0XTMA1 |
| 厂家： | 
Infineon |
| 描述： | Thermally-Enhanced High Power RF LDMOS FET |
| 文件： | 总10页 (文件大小：1228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTFB092707FH
Thermally-Enhanced High Power RF LDMOS FET
270 W, 28 V, 925 – 960 MHz
Description
The PTFB092707FH is a 270-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 925 to
960 MHz frequency band. Features include input and output match-
ing, high gain and thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTFB092707FH
Package H-37288L-4/2
Features
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 2150 mA, ƒ = 925 MHz,
3GPP WCDMA signal, 8 dB PAR,
•ꢀ Broadband internal input and output matching
•ꢀ Typical pulsed CW performance (10 µs pulse
10 MHz carrier spacing, 3.84 MHz BW
width10%, duty cycle, class AB), 960 MHz, 28 V
- Output power at P
- Efficiency = 52%
- Gain = 18.5 dB
= 250 W
1dB
21
20
19
18
17
16
50
40
30
20
10
0
•ꢀ Typical single-carrier WCDMA performance,
960 MHz, 28 V, 7.5 dB PAR @ 0.01% CCDF,
- Output power = 63 W
Gain
- Efficiency = 33%
- Gain = 19.5 dB
- ACPR = –35 dBc @ 3.84 MHz
•ꢀ Capable of handling 10:1 VSWR @28 V, 220 W
(CW) output power
Efficiency
33
•ꢀ Integrated ESD protection
•ꢀ Low thermal resistance
b092707fh-gr1a
29
37
41
45
49
53
•ꢀ Pb-free and RoHS compliant
Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon test fixture)
= 28 V, I = 2150 mA, P = 60 W avg, ƒ = 960 MHz, 3GPP signal, 3.84 MHz channel bandwidth, 8 dB peak/average
V
DD
DQ
OUT
@ 0.01% CCDF, 10 MHz spacing
Characteristic
Symbol
Min
18
Typ
19
Max
—
Unit
dB
Gain
G
ps
Drain Efficiency
Intermodulation Distortion
hD
28
29
—
%
IMD
—
–34
–33
dBc
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 10
Rev. 03.1, 2016-06-10
PTFB092707FH
DC Characteristics
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
V
GS
= 0 V, I = 10 mA
V(
BR)DSS
DS
V
V
= 28 V, V = 0 V
I
I
—
1
µA
µA
µA
W
DS
DS
GS
DSS
DSS
= 63 V, V = 0 V
—
—
10
1
GS
Gate Leakage Current
On-State Resistance
Operating Gate Voltage
V
GS
= 10 V, V = 0 V
I
—
—
DS
GSS
V
GS
= 10 V, V = 0.1 V
R
—
0.05
3.9
—
DS
DS(on)
V
= 28 V, I
= 2150 mA
V
GS
2.5
4.5
V
DS
DQ
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
V
DSS
V
GS
–6 to +10
200
V
T
°C
J
T
STG
–40 to +150
0.214
°C
Thermal Resistance (T
= 70°C, 220 W CW)
R
qJC
°C/W
CASE
Ordering Information
Type and Version
Order Code
Package and Description
H-37288L-4/2, earless flange
H-37288L-4/2, earless flange
Shipping
PTFB092707FH V1 R0
PTFB092707FHV1R0XTMA1
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
PTFB092707FH V1 R250 PTFB092707FHV1R250XTMA1
Data Sheet
2 of 10
Rev. 03.1, 2016-06-10
PTFB092707FH
Typical Performance (data taken in an Infineon test fixture)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 2150 mA, ƒ = 940 MHz,
3GPP WCDMA signal, 8 dB PAR,
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 2150 mA, ƒ = 960 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
10 MHz carrier spacing, 3.84 MHz BW
21
20
19
18
17
16
50
40
30
20
10
0
21
20
19
18
17
16
50
40
30
20
10
0
Gain
Gain
Efficiency
Efficiency
33
b092707fh-gr1b
b092707fh-gr1c
29
33
37
41
45
49
53
29
37
41
45
49
53
Output Power (dBm)
Output Power (dBm)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 2150 mA, ƒ = 940 MHz
3GPP WCDMA signal, 8 dB PAR,
VDD = 28 V, IDQ = 2150 mA, ƒ = 925 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
10 MHz carrier spacing, 3.84 MHz BW
-10
-20
-30
-40
-50
-60
50
40
30
20
10
0
-10
-20
-30
-40
-50
-60
50
40
30
20
10
0
IMD Low
IMD Up
ACPR
IMD Low
IMD Up
ACPR
Efficiency
Efficiency
b092707fh-gr2a
b092707fh-gr2b
29
33
37
41
45
49
53
29
33
37
41
45
49
53
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 10
Rev. 03.1, 2016-06-10
PTFB092707FH
Typical Performance (cont.)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 2150 mA, ƒ = 960 MHz
3GPP WCDMA signal, 8 dB PAR,
VDD = 28 V, IDQ = 2150 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
10 MHz carrier spacing, 3.84 MHz BW
-10
-20
-30
-40
-50
-60
50
40
30
20
10
0
-15
-25
-35
-45
-55
IMD Low
IMD Up
ACPR
925 MHz
940 MHz
960 MHz
Efficiency
IMD Up
IMD Low
b092707fh-gr2c
b092707fh-gr3
29
33
37
41
45
49
53
29
33
37
41
45
49
53
Output Power (dBm)
Output Power (dBm)
CW Performance
VDD = 28 V, IDQ = 2150 mA
CW Performance
at selected VDD
IDQ = 2150 mA, ƒ = 925 MHz
21
20
19
18
17
16
15
60
50
40
30
20
10
0
21
20
19
18
17
16
15
60
50
40
30
20
10
0
Gain
Gain
VDD = 24 V
925 MHz
940 MHz
960 MHz
V
V
DD = 28 V
DD = 32 V
Efficiency
Efficiency
b092707fh-gr4
b092707fh-gr5a
29
33
37
41
45
49
53
57
29
33
37
41
45
49
53
57
Output Power (dBm)
Output Power (dBm)
Data Sheet
4 of 10
Rev. 03.1, 2016-06-10
PTFB092707FH
Typical Performance (cont.)
CW Performance
at selected VDD
IDQ = 2150 mA, ƒ = 960 MHz
CW Performance
at selected VDD
IDQ = 2150 mA, ƒ = 940 MHz
21
60
50
40
30
20
10
0
21
20
19
18
17
16
15
60
50
40
30
20
10
0
20
Gain
Gain
VDD = 24 V
19
VDD = 24 V
V
V
DD = 28 V
DD = 32 V
18
17
16
15
V
V
DD = 28 V
DD = 32 V
Efficiency
Efficiency
33
b092707fh-gr5b
b092707fh-gr5c
29
33
37
41
45
49
53
57
29
37
41
45
49
53
57
Output Power (dBm)
Output Power (dBm)
Small Signal CW Performance
VDD = 28 V, IDQ = 2150 mA
21
20
19
18
17
-5
IRL
-10
-15
-20
-25
Gain
b092707fh-gr6
850
900
950
1000
1050
1100
Frequency (MHz)
Data Sheet
5 of 10
Rev. 03.1, 2016-06-10
PTFB092707FH
Broadband Circuit Impedance
Frequency
MHz
900
Z Source W
Z Load W
D
R
jX
R
jX
Z Source
Z Load
1.52
1.55
1.59
1.63
1.65
–1.80
–1.69
–1.60
–1.53
–1.48
0.98
0.89
0.82
0.74
0.67
–1.65
–1.54
–1.42
–1.29
–1.16
920
G
940
960
S
980
Load Pull Performance
Pulsed CW signal: 10 µsec, 10% duty cycle, 28 V, 2.0 A
P
1dB
Class AB
Max Output Power
Max PAE
Freq
[MHz]
Zs
[W]
Zl
[W]
Gain
[dB]
P
P
PAE
[%]
Zl
[W]
Gain
[dB]
P
P
OUT
PAE
[%]
OUT
OUT
OUT
[dBm]
54.26
54.38
54.38
[W]
267
274
274
[dBm]
52.02
51.87
52.02
[W]
159
154
159
920
940
960
1.62 – j2.25
1.80 – j2.54
1.73 – j2.59
0.88 – j1.37
0.76 – j1.49
0.73 – j1.46
17.3
17.0
17.4
42.9
41.4
41.4
2.16 – j0.22
2.38 – j0.50
2.09 – j0.64
20.8
20.9
20.8
62.1
61.8
60.3
Reference Circuit, tuned for 925 – 960 MHz
DUT
Reference Circuit Part No. LTN/PTFB092707FH V1
PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, ε = 3.66
Find Gerber files for this reference fixture on the Infineon Web site (www.infineon.com/rfpower)
PTFB092707FH V1
r
Data Sheet
6 of 10
Rev. 03.1, 2016-06-10
PTFB092707FH
Reference Circuit (cont.)
(62)
RO4350, .020 (62)
RO4350, .020
C803
C802
R804
C805
R801
C209
C203
C204
C218
C105
R103
VDD
C801
S3
R803
C102 R102
C104
C201
R805
C205
C804
R802
S2
R101
C211
C202
C207
RF_IN
RF_OUT
C106
C101
C110
C109
C103
C108
C208
C210
C206
C107
C215
C214
C212
VDD
C217
C216
C213
PTFB092707FH/1_OUT_01
PTFB092707FH/1_IN_01
b
0 9 2 7 0 7 f h _ c d _ 2 0 1 4 - 0 3 - 2 7
Reference circuit assembly diagram (not to scale)
Assembly Information
Component
Input
Description
Suggested Manufacturer
P/N
C101
Chip capacitor, 1 pF
Chip capacitor, 0.002 µF
Chip capacitor, 4.7 pF
Chip capacitor, 33 pF
Capacitor 4.7 µF
ATC
ATC100B1R0CW500XB
ATC200B203MW50X
ATC100B4R7CW500XB
ATC100B330JW
C102
ATC
C103
ATC
C104
ATC
C105
Nichicon
F931C475MAA
C106, C108
C107
Chip capacitor, 56 pF
Chip capacitor, 12 pF
Chip capacitor, 4.7 pF
Chip capacitor, 0.01 µF
Chip capacitor, 0.1 µF
Chip capacitor, 0.001 µF
Resistor, 10 W
ATC
ATC100B560JT
ATC
ATC100B120JW
C109
ATC
ATC100B4R7CT
C110
ATC
ATC200B103MW50X
ECJ-3VB1H104K
ECJ-1VB1H102K
ERJ-8GEYJ100V
ERJ-8GEYJ200V
ERJ-8GEYJ102V
ERJ-3GEYJ132V
ERJ-3GEYJ122V
C801, C804
C802, C803, C805
R101, R801, R803
R102, R103
R802
Panasonic Electronic Components
Panasonic
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Resistor, 20 W
Resistor, 1k W
R804
1.3k ohms
R805
1.2k ohms
(table cont. next page)
Data Sheet
7 of 10
Rev. 03.1, 2016-06-10
PTFB092707FH
Reference Circuit (cont.)
Assembly Information (cont.)
Component
Description
Transistor
Suggested Manufacturer
Fairchild Semiconductor
Bourns Inc.
P/N
S1
S2
S3
BCP56-10
3224W-1-202E
LM7805
Potentiometer, 2k W
Voltage regulator
Fairchild Semiconductor
Output
C201, C212
C202
Chip capacitor, 10 µF
Chip capacitor, 2.2 pF
Ceramic capacitor, 1 µF, 250 V
Capacitor, 10 µF
Matsuo
281M5002106K
ATC
ATC100B2R2CW
2225PC105KAT1A
UMK325C7106MM-T
ATC100B4R2CT
C203, C213
C204, C205, C214, C215
C206
AVX Corporation
Taiyo Yuden
Chip capacitor, 4.2 pF
Chip capacitor, 56 pF
Chip capacitor, 3.3 pF
Ceramic capacitor, 4.7 µF, 50 V
Capacitor, 10k pF
ATC
C207
ATC
ATC100B560JT
C208
ATC
ATC100B3R3CW
GRM32ER71H475KA88L
ATC200B103MW50X
C209, C216, C217, C218
C210, C211
Murata Electronics North America
ATC
Pinout Diagram (top view)
V
D
G
V
Pin
D
G
S (flange)
V
Description
Drain
Gate
Source
Supply voltage, V
DD
h - 3 7 2 8 8 L - 4 / 2 _ p d _ 3 - 2 7 - 2 0 1 4
S
Lead connections for PTFB092707FH
Data Sheet
8 of 10
Rev. 03.1, 2016-06-10
PTFB092707FH
Package Outline Specifications
Package H-37288L-4/2
25.81
[1.016]
D 45° x 1.96
4.03
[.158]
[.077]
22.86
[.900]
2X 1.02
[.040]
C
L
4X 4.83±0.51
[.190±.020]
V
V
D
2X 5.46
[.215]
2X 4.06
[.160]
(19.43
[.765])
9.40
[.370]
C
C
L
9.78
[.385]
L
2X 2.16
[.085]
G
+0.38
4X R0.51
-0.13
+.015
R.020
[
]
-.005
C
L
2X 17.75
[.699]
+0.25
4.04
-0.13
+.010
.159
[
]
-.005
22.35±0.20
[.880±.008]
C
L
1.57
[.062] SPH
1.02
[.040]
H-37288L-4/2_po_01_08-08-2013
S
23.11
[.910]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances 0.127 [.005].
4. Pins: D – drain, G – gate, S (flange) – source, V – V
.
DD
5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].
Find the latest and most complete information tabout products and packaging at the Infineon Internet page
(www.infineon.com/rfpower)
Data Sheet
9 of 10
Rev. 03.1, 2016-06-10
PTFB092707FH V1
Revision History
Revision
Date
Data Sheet Type
Advance
Page
All
Subjects (major changes since last revision)
New product, proposed only
01
02
2011-03-25
2014-02-25
Advance
All
Package changed, revised all data
Data Sheet now represents production-released product specificaitons, including reference
circuit and performance information
03
2014-04-01
2016-06-10
Production
Production
All
2
03.1
Updated ordering code to R0
We Listen toYour Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
(highpowerRF@infineon.com)
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
Edition 2016-06-10
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
10 of 10
Rev. 03.1, 2016-06-10
相关型号：
©2020 ICPDF网 联系我们和版权申明