PVD13 [INFINEON]

Photovoltaic Relay Microelectronic Power IC Relay Single-Pole, 500mA, 0-100V DC; 光伏继电器微电子功率IC继电器单刀， 500毫安， 0-100V直流


型号：	PVD13
厂家：	Infineon
描述：	Photovoltaic Relay Microelectronic Power IC Relay Single-Pole, 500mA, 0-100V DC 光伏继电器微电子功率IC继电器单刀， 500毫安， 0-100V直流继电器电子
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中文：	中文翻译
下载：	下载PDF数据表文档文件

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PD 1.024D

Series PVD13

Microelectronic

Power IC Relay

BOSFET^®Photovoltaic Relay

Single-Pole, 500mA, 0-100V DC

General Description

PVD13 Features

The Photovoltaic DC Relay (PVD) is a single-pole, nor-

mally open solid state replacement for electro-me-

chanical relays used for general purpose switching of

analog signals. It utilizes as an output switch a unique

bidirectional (AC or DC) MOSFET power IC termed a

BOSFET. The BOSFET is controlled by a photovoltaic

generator of novel construction, which is energized by

radiation from a dielectrically isolated light emitting di-

ode (LED).

The PVD overcomes the limitations of both conven-

tional and reed electromechanical relays by offering

the solid state advantages of long life, high operating

speed, low pick-up power, bounce-free operation, low

thermal voltages and miniaturization. These advan-

tages allow product improvement and design innova-

tions in many applications such as process control,

multiplexing, telecommunications, automatic test

equipment and data acquisition.

BOSFET Power IC

10¹⁰Operations

300µsec Operating Time

3 milliwatts Pick-Up Power

1000V/µsec dv/dt

Bounce-Free

■

8-pin DIP Package

-40°C to 85°C

UL recognized

The PVD can switch analog signals from thermocouple

level to 100 volts peak DC. Signal frequencies into the

RF range are easily controlled and switching rates up

to 2kHz are achievable.The extremely small thermally

generated offset voltages allow increased measure-

ment accuracies.

Unique silicon technology developed by International

Rectifier forms the heart of the PVD.The monolithic

BOSFET contains a bidirectional N-channel power

MOSFET output structure. In addition, this power IC

chip has input circuitry for fast turn-off and gate protec-

tion functions. This section of the BOSFET chip utilizes

both bipolar and MOS technology to form NPN transis-

tors, P-channel MOSFETs, resistors, diodes and ca-

pacitors.

The photovoltaic generator similarly utilizes a unique

International Rectifier alloyed multijunction structure.

The excellent current conversion efficiency of this tech-

nique results in the very fast response of the PVD mi-

croelectronic power IC relay.

Part Identification

This advanced semiconductor technology has created

a radically new control device. Designers can now de-

velop switching systems to new standards of electrical

performance and mechanical compactness.

Part Number

Operating

Sensitivity

Off-State

Resistance

10⁸Ohms

Voltage (DC)

PVD1352

PVD1354

0 – 100V

5 mA

10¹⁰Ohms

(BOSFET is a trademark of International Rectifier)

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Series PVD13 BOSFET^®Photovoltaic Relay

Electrical Specifications (-40°C ≤ T_A≤ +85°C unless otherwise specified)

INPUT CHARACTERISTICS

PVD1352

PVD1354

Units

Minimum Control Current (see figures 1 and 2)

For 300mA Continuous Load Current

For 400mA Continuous Load Current

For 150mA Continuous Load Current

2.0

5.0

mA@25°C

mA@40°C

mA@85°C

Maximum Control Current for Off-State Resistance at 25°C

Control Current Range (Caution: current limit input LED. See figure 6)

Maximum Reverse Voltage

µA(DC)

mA(DC)

V(DC)

2.0 to 25

7.0

OUTPUT CHARACTERISTICS

PVD1352

PVD1354

Units

Operating Voltage Range

0 to + 100

500

V_(PEAK)

Maxiumum Load Current 40°C (see figures 1and 2)

Response Time @25°C (see figures 7 and 8)

mA(DC)

Max. T

@ 12mA Control, 50 mA Load, 100 VDC

300

µs

(on)

(off)

µs

Max. On-state Resistance 25°C (Pulsed) (fig. 4) 200 mA Load, 5mA Control

Min. Off-state Resistance 25°C @ 80 VDC (see figure 5)

Max. Thermal Offset Voltage @ 5.0mA Control

Min. Off-State dv/dt

1.5

Ω

10⁸

10¹⁰

0.2

1000

µvolts

V/µs

Output Capacitance

pF @ 50VDC

GENERAL CHARACTERISTICS (PVD1352 and PVD1354)

Dielectric Strength: Input-Output

Units

V_RMS

Ω

2500

Insulation Resistance: Input-Output @ 90V_DC

Maximum Capacitance: Input-Output

10¹²@ 25°C - 50% RH

1.0

Max. Pin Soldering Temperature (1.6mm below seating plane, 10 seconds max.)

+260

Ambient Temperature Range:

Operating

Storage

-40 to +85

-40 to +100

°C

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Series PVD13 BOSFET^®Photovoltaic Relay

(mA)

Ambient Temperature (°C)

LED

Figure 1. Current Derating Curves

Figure 2. Typical Control Current

Requirements

Ambient Temperature (°C)

(Volts)

Figure 3.Typical On Characteristics

Figure 4.Typical Normalized On-Resistance

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Series PVD13 BOSFET^®Photovoltaic Relay

LED Forward Voltage Drop (Volts DC)

Ambient Temperature (°C)

Figure 5. Normalized Off-State Leakage

Figure 6. Input Characteristics

(Current Controlled)

Delay Time (microseconds)

Figure 7.Typical Delay Times

Figure 8. DelayTime Definitions

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Series PVD13 BOSFET^®Photovoltaic Relay

Ambient Temperature °C

Drain to Source Voltage

Figure 9.Typical ControlThreshold and

Transfer Ratio

Figure 10.Typical Output Capacitance

Wiring Diagram

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Series PVD13 BOSFET^®Photovoltaic Relay

Case Outline

(Dimensions in millimeters (inches))

Mechanical Specifications:

Package: 8-pin DIP

Tolerances: .015 (.38) unless otherwise specified

Case Material: molded epoxy

Weight: .07 oz. (2 gr.)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 713215

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: ++ 81 3 3983 0641

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: ++ 65 221 8371

http://www/irf.com/

Data and specifications subject to change without notice. 9/96

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PVD13 [INFINEON]

相关型号：

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