PXAC201602FCV1R250XTMA1 [INFINEON]

Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 â 1920 MHz, 2010 â 2025 MHz;


型号：	PXAC201602FCV1R250XTMA1
厂家：	Infineon
描述：	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 â 1920 MHz, 2010 â 2025 MHz
文件：	总9页 (文件大小：402K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PXAC201602FC

Thermally-Enhanced High Power RF LDMOS FET

140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz

Description

The PXAC201602FC is a 140-watt LDMOS FET for use in multi-

standard cellular power ampliﬁer applications in the 1880 to 1920

MHz and 2010 to 2025 MHz frequency bands. It features input and

output matching, and a thermally-enhanced package with earless

ﬂange. Manufactured with Inﬁneon's advanced LDMOS process, this

device provides excellent thermal performance and superior reliability.

PXAC201602FC

Package H-37248-4

Single-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 360 mA, ƒ = 1880 MHz

Features

•

Asymmetric Doherty design

3GPP WCDMA signal:

10 dB PAR, 3.84 MHz BW

- Main: 55 W Typ (P

- Peak: 85 W Typ (P

)

1dB

•

Broadband internal matching

Efficiency

Pulsed CW performance, 1960 MHz, 28 V

- Output power at P

- Gain = 18 dB

= 100 W

1dB

Gain

- Efﬁciency = 55%

•

Capable of handling 10:1 VSWR @ 28 V, 140 W

(CW) output power

PAR @ 0.01% CCDF

-20

-40

-60

•

Integrated ESD protection

Human Body Model Class 1C (per JESD22-A114)

Low thermal resistance

c201602fc-gr1a

Pb-free and RoHS compliant

Can be operated with I

of up to 700 mA

Average Output Power (dBm)

(not to exceed maximum ratings limits)

RF Specifications

Single-carrier WCDMA Characteristics (tested in Inﬁneon Doherty test ﬁxture)

= 28 V, V = 1.4 V, I = 360 mA, P = 22.5 W average, ƒ = 2025 MHz, 3GPP WCDMA signal, channel band-

GS(PEAK)

OUT

width = 3.84 MHz, 10 dB PAR @0.01% CCDF.

Characteristic

Symbol

Min

16.5

Typ

17.7

Max

—

Unit

Gain

Drain Efficiency

h_D

—

Adjacent Channel Power Ratio

ACPR

OPAR

—

–28

—

–26

—

dBc

Output PAR @ 0.01% CCDF 1880 MHz

Output PAR @ 0.01% CCDF 2025 MHz

7.0

7.8

—

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 9

Rev. 04.1, 2016-07-19

PXAC201602FC

DC Characteristics

Characteristic

Conditions

Symbol

Min

—

Typ

—

Max

—

Unit

Drain-source Breakdown Voltage

Drain Leakage Current

= 0 V, I = 10 mA

(BR)DSS

= 28 V, V = 0 V

—

1.0

10.0

1.0

—

µA

DSS

GSS

= 63 V, V = 0 V

—

Gate Leakage Current

= 10 V, V = 0 V

—

On-state Resistance

(main)

(peak)

= 10 V, V = 0.1 V

—

0.175

2.71

1.2

DS(on)

= 10 V, V = 0.1 V

—

Operating Gate Voltage (main)

(peak)

= 28 V, I

= 360 mA

= 0 A

2.5

0.9

2.8

1.5

= 1.2 V, I

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-source Voltage

Gate-source Voltage

Operating Voltage

DSS

–6 to +10

0 to +32

225

Junction Temperature

Storage Temperature Range

°C

STG

–65 to +150

0.48

°C

Thermal Resistance (Doherty, T

= 70°C, 100 W CW)

°C/W

CASE

Ordering Information

Type and Version

Order Code

Package Description

Shipping

PXAC201602FC V1 R0

PXAC201602FCV1R0XTMA1

H-37248-4, ceramic open-cavity, earless Tape & Reel, 50 pcs

PXAC201602FC V1 R250 PXAC201602FCV1R250XTMA1 H-37248-4, ceramic open-cavity, earless Tape & Reel, 250 pcs

Data Sheet

2 of 9

Rev. 04.1, 2016-07-19

PXAC201602FC

Typical Performance (data taken in a reference test fixture)

Single-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 360 mA, ƒ = 2025 MHz

Single-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 360 mA, ƒ = 1880 MHz and

2025 MHz. 3GPP WCDMA signal,

10 dB PAR, 3.84 MHz BW

3GPP WCDMA signal:

10 dB PAR, 3.84 MHz BW

-10

-20

-30

-40

-50

-60

-70

Efficiency

ACP Up

ACP Low

Gain

PAR @ 0.01% CCDF

-20

-40

1880 MHz

2025 MHz

Efficiency

c201602fc-gr1b -60

c201602fc-gr2

Average Output Power (dBm)

Single-carrier WCDMA Broadband

Performance

V_DD= 28 V, I_DQ= 360 mA, P_OUT= 43.5 dBm,

3GPP WCDMA signal, 10 dB PAR

Single-carrier WCDMA Broadband

Performance

V_DD= 28 V, I_DQ= 360 mA, P_OUT= 43.5 dBm,

3GPP WCDMA signal, 10 dB PAR

-15

-20

-25

-30

-5

-10

-15

-20

-25

-30

-35

Return Loss

ACP Up

Gain

Efficiency

c201602fc-gr3

c201602fc-gr4

1650

1750

1850

1950

2050

2150

1650

1750

1850

1950

2050

2150

Frequency (MHz)

Data Sheet

3 of 9

Rev. 04.1, 2016-07-19

PXAC201602FC

Typical Performance (cont.)

CW Performance

V_DD= 28 V, I_DQ= 360 mA

CW Performance at selected V_DD

I_DQ= 360 mA, ƒ = 1880 MHz

Efficiency

Gain

24 V

28 V

32 V

1880 MHz

2025 MHz

c201602fc-gr5

c201602fc-gr6a

Output Power (dBm)

CW Performance at selected V_DD

Small Signal CW Performance

I_DQ= 360 mA, ƒ = 2025 MHz

V_DD= 28 V, I_DQ= 360 mA

IRL

Efficiency

-5

-10

-15

-20

-25

-30

Gain

24 V

28 V

32 V

c201602fc-gr6b

c201602fc-gr7

1750

1850

1950

2050

2150

Frequency (MHz)

Output Power (dBm)

Data Sheet

4 of 9

Rev. 04.1, 2016-07-19

PXAC201602FC

Load Pull Performance

Z Source

Z Load

Main side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 360 mA

1dB

Class AB

Max Output Power

Max PAE

Freq

[MHz]

[W]

Gain

[dB]

[W]

PAE

[%]

[W]

Gain

OUT

[W]

PAE

[%]

OUT

[dBm]

48.39

48.1

[dB]

22.43

22.38

22.6

[dBm]

46.72

46.36

46.41

46.22

46.17

1880

1900

1920

3.88 – j12.84

5.30 – j12.89

5.84 – j14.94

3.96 – j4.18

4.14 – j4.36

4.13 – j4.48

3.84 – j4.53

3.99 – j4.73

20.01

20.21

20.33

20.31

20.4

69.02

64.57

67.92

68.55

65.16

54.18

53.31

55.15

55.74

54.0.3

7.54 – j1.33

7.70 – j1.56

7.03 – j0.76

5.79 – j0.62

5.26 – j0.81

46.99

43.25

43.75

41.88

41.40

65.35

61.53

63.54

64.2

48.32

48.36

48.14

2010

2025

11.80 – j17.15

12.09 – j16.26

22.76

22.7

62.49

Peak side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 540 mA

1dB

Class AB

Max Output Power

Max PAE

Freq

[MHz]

[W]

Gain

[dB]

[dBm]

[W]

PAE

[%]

[W]

Gain

[dB]

[dBm]

OUT

[W]

PAE

[%]

OUT

1880

1900

1920

2010

2025

4.62 – j9.02

5.10 – j8.97

6.65 – j8.28

10.61 – j5.85

12.35 – j5.04

2.53 – j4.95

2.65 – j4.91

2.587 – j5.03

2.48 – j5.17

2.48 – j5.64

19.44

19.87

19.82

20.19

20.34

50.31

49.97

50.07

50.19

50.09

107.40

99.31

54.66

53.40

53.76

53.45

52.31

5.39 – j2.83

4.50 – j3.28

4.31 – j3.12

3.80 – j3.47

3.83 – j3.38

22.15

21.90

21.93

22.46

22.70

48.15

48.47

48.54

48.61

48.26

65.31

70.31

71.45

72.61

66.99

64.38

61.18

62.86

63.49

61.23

101.62

104.47

102.09

Reference Circuit, tuned for 1800 – 2200 MHz

DUT

Reference Circuit Part No. LTA/PXAC201602FC V1

PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, ε = 3.66

Find Gerber ﬁles for this reference ﬁxture on the Inﬁneon Web site at (www.infineon.com/rfpower)

PXAC201602FC V1

Data Sheet

5 of 9

Rev. 04.1, 2016-07-19

PXAC201602FC

Reference Circuit (cont.)

RO4350, .020 (60)

RO4350, .020

(61)

C218

C110

VGG

C104

VDD

C214 C219

C215

C108

C101

C216

C213

R101

C102

C103

C207

C217

C211

C206

C205

C105

RF_IN

RF_OUT

C210

C208

C209

R102

C107

R103

VDD

C106

VGG

C109

C204

C201

C212

C202

C203

PXAC201602FC_OUT_01

PXAC201602FC_IN_01

2 0 1 6 0 2 f c _ c d _ 2 0 1 4 - 0 3 - 1 1

Reference circuit assembly diagram (not to scale)

Assembly Information

Component

Description

Suggested Manufacturer

P/N

Input

C101, C104, C106, C107

Chip capacitor, 18 pF

Chip capacitor, 0.4 pF

Chip capacitor, 1.6 pF

Chip capacitor, 2.4 pF

Chip capacitor, 0.3 pF

Capacitor, 10 µF

ATC

ATC800A180JT250T

ATC600F0R4BT

ATC600F1R6BT

ATC800A2R4BT250T

ATC600F0R3BT

UMK325C7106MM-T

ERJ-3GEYJ100V

C16A50Z4

C102

ATC

C103

ATC

C105

ATC

C108

ATC

C109, C110

R101, R102

R103

Taiyo Yuden

Resistor, 10 Ohm

Panasonic Electronic Components

Resistor, 50 Ohm

Anaren

Directional coupler

X3C21P1-04S

Data Sheet

6 of 9

Rev. 04.1, 2016-07-19

PXAC201602FC

Reference Circuit (cont.)

Assembly Information (cont.)

Component

Output

Description

Suggested Manufacturer

P/N

C201, C202, C204, C206,

C208, C214, C216, C219

Capacitor, 10 µF

Taiyo Yuden

UMK325C7106MM-T

C203, C218

Capacitor, 220 µF, 50 V

Chip capacitor, 18 pF

Cornell Dubilier Electronics (CDE)

ATC

SK221M050ST

C205, C210, C211, C212,

C215

ATC800A180JT250T

C207

C209

C213

C217

Chip capacitor, 1.5 pF

Chip capacitor, 2.4 pF

Chip capacitor, 1.2 pF

Chip capacitor, 2.2 pF

ATC

ATC600F1R5BT

ATC800A2R4BT250T

ATC600F1R2BT

ATC800A2R2BT250T

Pinout Diagram (top view)

Main

Peak

Description

Drain device 1 (main)

Drain device 2 (peak)

Gate device 1 (main)

Gate device 2 (peak)

Source (ﬂange)

H-37248-4_pd_10-10-2012

Data Sheet

7 of 9

Rev. 04.1, 2016-07-19

PXAC201602FC

Package Outline Specifications

Package H-37248-4

(8.89

[.350])

(5.08

[.200])

2X 45° X 2.72

[45° X .107]

+0.13

-0.38

4X R0.76

2X 4.83±0.51

[.190±0.020]

+0.005

-0.015

R.030

[

]

FLANGE 9.78

[.385]

LID 9.40

[.370]

19.43±0.51

[.765±0.020]

4X 3.81

[.150]

2X 12.70

[.500]

SPH 1.57

[.062]

19.81±0.20

[.780±0.008]

1.02

[.040]

H-37248-4_po_02_01-09-2013

0.0381 [.0015]

-A-

3.76±0.25

[.148±0.010]

20.57

[.810]

Diagram Notes—unless otherwise speciﬁed:

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Primary dimensions are mm. Alternate dimensions are inches.

3. All tolerances 0.127 [.005].

4. Pins: D1, D2 – drain, S (ﬂange) – source, G1, G2 – gate.

5. Lead thickness: 0.10 +0.076/–0.025 [.004 +.003/–.001].

6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].

Find the latest and most complete information tabout products and packaging at the Inﬁneon Internet page

(www.infineon.com/rfpower)

Data Sheet

8 of 9

Rev. 04.1, 2016-07-19

PXAC201602FC V1

Revision History

Revision Date

Data Sheet

Page

All

Subjects (major changes since last revision)

New product, proposed only

2014-02-21 Advance

2014-02-25 Advance

01.1

Added thermal resistance information

Data Sheet now represents production-released product speciﬁcaitons,

including reference circuit and performance information

2014-03-14 Production

All

2015-05-13 Porduction

2015-05-31 Production

2016-07-19 Production

Change to RF Test Specﬁcations

1, 2

Revised condition for RF test specﬁcations, updated ordering code

Added features information

04.1

We Listen toYour Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to:

(highpowerRF@infineon.com)

To request other information, contact us at:

+1 877 465 3667 (1-877-GO-LDMOS) USA

or +1 408 776 0600 International

Edition 2016-07-19

Published by

Infineon Technologies AG

85579 Neubiberg, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.

With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the

application of the device, Inﬁneon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Inﬁneon Technologies Ofﬁce (www.infineon.com/rfpower).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question,

please contact the nearest Inﬁneon Technologies Ofﬁce.

Inﬁneon Technologies components may be used in life-support devices or systems only with the express written approval of In-

ﬁneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device

or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be

implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be endangered.

Data Sheet

9 of 9

Rev. 04.1, 2016-07-19

PXAC201602FCV1R250XTMA1 [INFINEON]

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