PXAC261002FCV1R0 [INFINEON]

Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 â 2690 MHz;


型号：	PXAC261002FCV1R0
厂家：	Infineon
描述：	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 â 2690 MHz
文件：	总8页 (文件大小：162K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PXAC261002FC

Thermally-Enhanced High Power RF LDMOS FET

100 W, 28 V, 2490 – 2690 MHz

Description

The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric

design intended for use in multi-standard cellular power ampliﬁer

applications in the 2496 to 2690 MHz frequency band. Features

include dual-path design, high gain and a thermally-enhanced pack-

age with earless ﬂanges. Manufactured with Inﬁneon's advanced

PXAC261002FC

Package H-37248-4

LDMOS process, this device provides excellent thermal performance

and superior reliability.

Features

Two-carrier WCDMA Drive-up

V_DD= 26 V, I_DQ= 210 mA, V_GS1= 2.62 V,

ƒ = 2590 MHz, 3GPP WCDMA signal,

PAR = 8 dB, 10 MHz carrier spacing,

BW 3.84 MHz, Doherty Fixture

•

Broadband internal input and output matching

Asymmetric design

- Main: P1dB = 40 W Typ

- Peak: P1dB = 70 W Typ

•

Typical Pulsed CW performance, 2590 MHz, 26 V,

160 µs, 10% duty cycle, Doherty Conﬁguration

- Output power at P

= 46.5 dBm

= 50.1 dBm

Gain

1dB

3dB

•

Capable of handling 10:1 VSWR @28 V, 100 W

(CW) output power

Integrated ESD protection : Human Body Model,

Class 1C (per JESD22-A114)

•

Low thermal resistance

Efficiency

Pb-free and RoHS compliant

c261002fc_g1

Output Power (dBm)

RF Characteristics

Two-carrier WCDMA Speciﬁcations (tested in Inﬁneon production Doherty test ﬁxture)

= 26 V, I

= 210 mA, P

= 18 W avg, V

= 1.4 V, ƒ = 2550 MHz, ƒ = 2590 MHz, 3GPP signal, 3.84 MHz channel

OUT

GS2

bandwidth, 8 dB peak/average @ 0.01% CCDF

Characteristic

Gain

Symbol

Min

14.1

Typ

15.1

Max

—

Unit

Drain Efﬁciency

η_D

—

Intermodulation Distortion

IMD

—

–22

—

–21

—

dBc

Output PAR at 0.01% probability on CCDF

OPAR

7.5

(one-carrier WCDMA, 2585 MHz, 10 dB PAR)

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 8

Rev. 03.3, 2016-06-15

PXAC261002FC

DC Characteristics (each side)

Characteristic

Conditions

Symbol

Min

—

Typ

—

Max

—

Unit

Drain-Source Breakdown Voltage

Drain Leakage Current

= 0 V, I = 10 mA

BR)DSS

= 28 V, V = 0 V

—

µA

DSS

= 63 V, V = 0 V

—

Gate Leakage Current

= 10 V, V = 0 V

—

GSS

On-State Resistance

(main)

(peak)

= 10 V, V = 0.1 V

DS(on)

—

0.3

0.16

2.6

1.4

—

= 10 V, V = 0.1 V

—

Operating Gate Voltage (main)

(peak)

= 26 V, I

= 210 mA

= 0 mA

2.1

0.9

3.1

1.9

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Operating Voltage

DSS

–6 to +10

0 to +32

225

Junction Temperature

Storage Temperature Range

Thermal Resistance (Doherty, T

°C

STG

–65 to +150

0.6

°C

= 70°C, 100 W CW)

°C/W

CASE

Ordering Information

Type and Version

Order Code

Package and Description

Shipping

PXAC261002FC V1 R0

PXAC261002FCV1R0XTMA1

H-37248-4, open-cavity,

push-pull, earless ﬂange

Tape & Reel, 50 pcs

PXAC261002FC V1 R250

PXAC261002FC V1R250XTMA1

H-37248-4, earless ﬂange

push-pull, earless ﬂange

Tape & Reel, 250 pcs

Data Sheet

2 of 8

Rev. 03.3, 2016-06-15

PXAC261002FC

Typical Performance (data taken in a production Doherty test ﬁxture)

Two-carrier WCDMA Drive-up

V_DD= 26 V, I_DQ= 210 mA, V_GS1= 2.62 V,

ƒ = 2590 MHz, 3GPP WCDMA signal,

PAR = 8 dB, 10 MHz carrier spacing,

BW 3.84 MHz

Two-carrier WCDMA Drive-up

V_DD= 26 V, I_DQ= 210 mA, V_GS1= 2.62 V,

3GPP WCDMA signal, PAR = 8 dB,

10 MHz carrier spacing, BW 3.84 MHz

-10

-20

-30

-40

-50

-60

-18

-22

-26

-30

-34

-38

-42

2550MHz IMDL

2550MHz IMDU

2585MHz IMDL

2585MHz IMDU

2590MHz IMDL

2590MHz IMDU

c261002fc_g3

IMD Low

IMD Up

ACPR

Efficiency

c261002fc_g2

Output Power (dBm)

CW Performance

at various V_DD

I_DQ= 210 mA, ƒ = 2590 MHz

Power Sweep, CW

V_DD= 26 V, I_DQ= 210 mA, V_GS1= 2.62 V

16.5

15.5

14.5

13.5

12.5

11.5

10.5

15.5

14.5

13.5

12.5

11.5

10.5

Gain

Efficiency

2550 MHz

V_DD= 24 V

2585 MHz

2590 MHz

_DD= 28 V

_DD= 32 V

c261002fc_g4

c261002fc_g5

Output Power (dBm)

Data Sheet

3 of 8

Rev. 03.3, 2016-06-15

PXAC261002FC

Typical Performance (cont.)

Small Signal CW Performance

Gain & Input Return Loss

V_DD= 28 V, I_DQ= 210 mA

Gain

-5

-10

-15

-20

IRL

c261002fc_g6

2500

2550

2600

2650

2700

2750

Frequency (MHz)

Load Pull Performance

Main Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, V

= 28 V, I

= 240 mA

1dB

Max Output Power

Max PAE

[Ω]

Freq

[MHz]

[Ω]

Gain

[dB]

PAE

[%]

[Ω]

Gain

[dB]

PAE

[%]

[W]

OUT

[dBm]

46.58

46.44

46.35

[dBm]

[W]

2540 13.3 – j23.8 5.7 – j10.9

2590 16.5 – j22.0 5.9 – j11.5

16.8

16.7

16.8

50.3

50.0

10.9 – j7.1

9.7 – j7.6

10 – j6.2

19.1

18.7

19.1

45.1

59.5

58.5

58.0

45.3

2640

21 – j24.7

6.4 – j11.5

44.9

Peak Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, 28 V, V

= 1.4 V

GS1

1dB

Max Output Power

Max PAE

[Ω]

Freq

[MHz]

[Ω]

Gain

[dB]

PAE

[%]

[Ω]

Gain

[dB]

PAE

[%]

OUT

[dBm]

[W]

100

[dBm]

[W]

2540

2590

2640

3.8-j12.1

5.2-j12.8

5.8-j13.3

11.8-j7.3

13-j5.4

14-j3.9

13.0

12.8

53.5

53.4

52.9

5.2-j5.3

5.7-j5.6

6.6-j6

14.4

14.2

48.4

63.4

62.2

61.0

48.5

49.9

48.4

Data Sheet

4 of 8

Rev. 03.3, 2016-06-15

PXAC261002FC

Reference Circuit, 2545 – 2595 MHz

RO4350, .020

(194)

RO4350, .020

(60)

VGS

VDD

C106

C210 C208

C209

C107

R103

C211

C105

C104

C213

R102

C212

RF_OUT

RF_IN

C207

C206

C202

C103

R101

C201

C102

VGSPK

C203

C205

VDD

C101

C204

02_D

PXAC261002FC_OUT

PXAC261002FC_IN_02_D

x a c 2 6 1 0 0 2 f c _ C D _ 0 1 - 2 8 - 2 0 1 4

Reference circuit assembly diagram (not to scale)

Data Sheet

5 of 8

Rev. 03.3, 2016-06-15

PXAC261002FC

Reference Circuit (cont.)

Reference Circuit Assembly

DUT

PXAC261002FC V1

Test Fixture Part No.

PCB

LTA/PXAC261002FC V1

Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, _r= 3.66, ƒ = 2545 – 2595 MHz

Find Gerber ﬁles for this test ﬁxture on the Inﬁneon Web site at http://www.infineon.com/rfpower

Components Information

Component

Input

Description

Suggested Manufacturer

P/N

C101, C106

C102

Capacitor, 10 µF

Capacitor, 18 pF

Capacitor, 1.6 pF

Capacitor, 0.6 pF

Capacitor, 12 pF

Resistor, 10 ohm

Resistor, 50 ohm

Hybrid coupler

Taiyo Yuden

UMK325C7106MM-T

ATC800A180JT250T

ATC800A1R6CT250T

ATC800A0R6CT250T

ATC800A120JT250T

ERJ-3GEYJ100V

C16A50Z4

ATC

C103

ATC

C104

ATC

C105, C107

R101, R103

R102

ATC

Panasonic Electronic Components

Anaren

X3C26P1-03S

Output

C201, C202

Capacitor, 12 pF

Capacitor, 10 µF

ATC

ATC800A120KT250T

UMK325C7106MM-T

C203, C205, C208,

C210

Taiyo Yuden

C204, C209

C206

Capacitor, 220 µF

Capacitor, 0.5 pF

Capacitor, 0.6 pF

Capacitor, 12 pF

Capacitor, 0.4 pF

Capacitor, 3.9 pF

Panasonic Electronic Components

EEE-FP1V221A

ATC

ATC800A0R5CT250T

ATC800A0R6CT250T

ATC800A120JT250T

ATC800A0R4CT250T

ATC800A3R9CT250T

C207

C211

C212

C213

Pinout Diagram (top view)

Main

Peak

Description

Drain device 1 (Main)

Drain device 2 (Peak)

Gate device 1 (Main)

Gate device 2 (Peak)

Source (ﬂange)

H-37248-4_pd_10-10-2012

Lead connections for PXAC261002FC

Data Sheet

6 of 8

Rev. 03.3, 2016-06-15

PXAC261002FC

Package Outline Speciﬁcations

Package H-37248-4

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Diagram Notes—unless otherwise speciﬁed:

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Primary dimensions are mm. Alternate dimensions are inches.

3. All tolerances ꢀ.12ꢁ ꢂ.ꢀꢀ5ꢃ unless speciﬁed otherwise.

4. Pins: D1, D2 – drains; G1, G2 – gates; S – source.

5. Lead thickness: ꢀ.1ꢀ + ꢀ.ꢀꢁ6/–ꢀ.ꢀ25 mm ꢂꢀ.ꢀꢀ4+ꢀ.ꢀꢀ3/–ꢀ.ꢀꢀ1 inchꢃ.

6. Gold plating thickness: 1.14 ꢀ.3ꢄ micron ꢂ45 15 microinchꢃ.

Find the latest and most complete information about products and packaging at the Inﬁneon Internet page

http://www.infineon.com/rfpower

Data Sheet

7 of 8

Rev. 03.3, 2016-06-15

PXAC261002FC V1

Revision History

Revision

Date

Data Sheet Type

Page

Subjects (major changes since last revision)

2013-11-01

Advance

All

Data Sheet reﬂects advance speciﬁcation for product development

All

Data Sheet reﬂects released product speciﬁcation

Revised all data and includes ﬁnal specs, typical performance graphs, loadpull, reference circuit

2014-01-28

Production

2014-03-26

2014-04-04

2016-06-07

2016-06-15

Production

Corrected frequency range. Removed "doherty" from second feature. Updated feature 2.

Removed bullet point 4 (extra lines) from Features section.

Added OPAR to RF table.

03.1

03.2

03.3

Adjust OPAR information.

We Listen toYour Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to:

highpowerRF@infineon.com

To request other information, contact us at:

+1 877 465 3667 (1-877-GO-LDMOS) USA

or +1 408 776 0600 International

Edition 2016-06-15

Published by

Inﬁneon Technologies AG

85579 Neubiberg, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.

With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the

application of the device, Inﬁneon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Inﬁneon Technologies Ofﬁce (www.infineon.com/rfpower).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question,

please contact the nearest Inﬁneon Technologies Ofﬁce.

Inﬁneon Technologies components may be used in life-support devices or systems only with the express written approval of In-

ﬁneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device

or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be

implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be endangered.

Data Sheet

8 of 8

Rev. 03.3, 2016-06-15

PXAC261002FCV1R0 [INFINEON]

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