Q62702-F1086 [INFINEON]
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA); NPN硅RF晶体管(对于低噪声,高增益宽带放大器集电极电流从2mA至30mA),口径![Q62702-F1086](http://pdffile.icpdf.com/pdf1/p00089/img/icpdf/Q62702_467402_icpdf.jpg)
型号: | Q62702-F1086 |
厂家: | ![]() |
描述: | NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA) |
文件: | 总7页 (文件大小:61K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BFR 93A
NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector current from 2mA to 30mA
• CECC.type available: CECC 50 002/256
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFR 93A
R2s
Q62702-F1086
1 = B
2 = E
3 = C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
V
12
20
20
2
V
CEO
CES
CBO
EBO
I
I
50
6
mA
mW
°C
C
Base current
B
Total power dissipation
P
tot
≤
T
63 °C
300
S
Junction temperature
Ambient temperature
Storage temperature
T
T
T
150
j
- 65 ... + 150
- 65 ... + 150
A
stg
Thermal Resistance
1)
≤
Junction - soldering point
R
thJS
290
K/W
1) T is measured on the collector lead at the soldering point to the pcb.
S
Semiconductor Group
1
Dec-12-1996
BFR 93A
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V
(BR)CEO
I = 1 mA, I = 0
12
-
-
C
B
Collector-emitter cutoff current
= 20 V, V = 0
I
I
I
µA
nA
µA
-
CES
V
CE
-
-
100
100
10
BE
Collector-base cutoff current
= 10 V, I = 0
CBO
V
CB
-
-
E
Emitter-base cutoff current
= 2 V, I = 0
EBO
V
EB
-
-
C
DC current gain
I = 30 mA, V = 8 V
h
FE
50
100
200
C
CE
Semiconductor Group
2
Dec-12-1996
BFR 93A
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
f
GHz
pF
T
I = 30 mA, V = 8 V, f = 500 MHz
4.5
6
-
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
C
C
F
cb
ce
eb
V
CB
-
-
-
0.58
0.23
1.7
0.9
Collector-emitter capacitance
= 10 V, f = 1 MHz
V
CE
-
-
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
Noise figure
dB
I = 5 mA, V = 8 V, Z = Z
C
CE
S
Sopt
f = 900 MHz
-
-
2
-
-
f = 1.8 GHz
Power gain
3.3
2)
G
ma
I = 30 mA, V = 8 V, Z = Z
Sopt
C
CE
S
Z = Z
L
Lopt
f = 900 MHz
f = 1.8 GHz
-
-
13.5
8.5
-
-
2
Transducer gain
|S
|
21e
Ω
I = 30 mA, V = 8 V, Z =Z = 50
C
CE
S
L
f = 900 MHz
-
-
12
-
-
f = 1.8 GHz
6.5
2
1/2
2) G = |S /S | (k-(k -1) )
ma
21 12
Semiconductor Group
3
Dec-12-1996
BFR 93A
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
8.6752
20.011
1.5466
26.834
1.95
fA
V
BF =
137.63
0.33395
59
-
NF =
0.93633
2619.3
-
VAF =
NE =
IKF =
BR =
IKR =
RB =
A
-
ISE =
NR =
ISC =
IRB =
RC =
fA
-
-
0.88761
0.70823
VAR =
NC =
RBM =
CJE =
TF =
V
0.015129 A
fA
Ω
Ω
V
-
-
7.2326
1.0075
0.70393
0.28319
0
0.043806 mA
Ω
fF
ps
mA
V
Ω
-
3.4649
3.1538
33.388
2.5184
0.72744
1.1061
0
RE =
0.13193
0.5071
0.17765
1039.5
0.21422
0.75
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
V
fF
-
ITF =
VJC =
TR =
deg
-
0.34565
0
ns
-
fF
-
V
eV
K
MJS =
XTI =
0
1.11
3
-
0.75935
-
300
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitenfunktechnik (IMST)
© 1996 SIEMENS AG
Package Equivalent Circuit:
LBI =
0.85
0.51
0.69
0.61
0
nH
nH
nH
nH
nH
nH
fF
LBO =
LEI =
LEO =
LCI =
LCO =
CBE =
CCB =
CCE =
0.49
73
84
fF
165
fF
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Dec-12-1996
BFR 93A
Total power dissipation P = f (T *, T )
tot
A
S
* Package mounted on epoxy
400
mW
Ptot
300
TS
250
200
150
100
TA
50
0
0
20
40
60
80
100 120 °C 150
TA,TS
Permissible Pulse Load R
= f (t )
Permissible Pulse Load P
/P
= f (t )
thJS
p
totmax totDC p
10 2
10 3
K/W
RthJS
Ptotmax/PtotDC
-
D = 0
10 2
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
10 1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
tp
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
tp
Semiconductor Group
5
Dec-12-1996
BFR 93A
Collector-base capacitance C = f (V )
Transition frequency f = f (I )
cb
CB
T
C
V
BE
= v = 0, f = 1MHz
be
V
= Parameter
CE
6.0
GHz
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.5
pF
10V
2V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Ccb
fT
1V
0.7V
0.5
0.0
0.1
0.0
0
4
8
12
16
V
VR
22
0
10
20
30
40
mA
IC
60
Power Gain G , G = f(I )
Power Gain G , G = f(I )
ma ms C
ma
ms
C
f = 0.9GHz
= Parameter
f = 1.8GHz
V = Parameter
CE
V
CE
14
dB
10
8
9
dB
7
10V
10V
5V
3V
2V
5V
3V
G
G
2V
6
5
1V
4
1V
3
6
4
2
1
0.7V
0.7V
mA
IC
0
10
20
30
40
mA
IC
60
0
10
20
30
40
60
Semiconductor Group
6
Dec-12-1996
BFR 93A
Power Gain G , G = f(V ):_____
Intermodulation Intercept Point IP =f(I )
ma
ms
CE
3
C
2
|S | = f(V ):---------
(3rd order, Output, Z =Z =50 )
Ω
S L
21
CE
f = Parameter
V
= Parameter, f = 900MHz
CE
16
32
dBm
28
IC=30mA
8V
5V
dB
12
10
8
0.9GHz
0.9GHz
G
IP3
26
3V
2V
24
22
1.8GHz
1.8GHz
20
18
6
16
1V
14
4
2
12
10
0
2
4
6
8
V
12
0
10
20
30
40
mA
IC
60
VCE
2
Power Gain G , G = f(f)
Power Gain |S | = f(f)
21
ma
ms
V
= Parameter
V
= Parameter
CE
CE
32
30
IC=30mA
IC=30mA
dB
24
20
16
12
8
dB
22
18
14
10
6
G
S21
10V
10V
4
0
2
1V
0.7V
1V
0.7V
-2
0.0
0.5
1.0
1.5
2.0
2.5
GHz 3.5
f
0.0
0.5
1.0
1.5
2.0
2.5
GHz 3.5
f
Semiconductor Group
7
Dec-12-1996
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