Q62702-P1167 [INFINEON]
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage); PNP硅达林顿晶体管（高集电极电流低集电极 - 发射极饱和电压）
| 型号： | Q62702-P1167 |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) |
| 文件： | 总5页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Silicon Darlington Transistors
BSP 60
… BSP 62
● High collector current
● Low collector-emitter saturation voltage
● Complementary types: BSP 50 … BSP 52 (NPN)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
4
BSP 60
BSP 61
BSP 62
BSP 60
BSP 61
BSP 62
Q62702-P1166
Q62702-P1167
Q62702-P1168
B
C
E
C
SOT-223
Maximum Ratings
Parameter
Symbol
Values
BSP 60 BSP 61 BSP 62
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
CER
CB0
EB0
45
60
60
80
80
90
V
V
V
5
1
I
I
I
C
A
Peak collector current
Base current
CM
2
B
0.1
1.5
150
Total power dissipation, T
S
= 124 ˚C
P
tot
W
Junction temperature
Tj
˚C
Storage temperature range
T
stg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 72
≤ 17
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
BSP 60
… BSP 62
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage1)
V
V
V
(BR)CER
(BR)CB0
(BR)EB0
V
45
60
80
–
–
–
–
–
–
IC
= 10 mA, RBE = 150 Ω
BSP 60
BSP 61
BSP 62
Collector-base breakdown voltage
IC
= 100 µA, I
B
= 0
BSP 60
BSP 61
BSP 62
60
80
90
–
–
–
–
–
–
Emitter-base breakdown voltage
= 100 µA, I = 0
5
–
–
–
–
–
–
IE
B
Collector-emitter cutoff current
I
CES
EB0
10
10
µA
VCE = VCERmax, VBE = 0
Emitter-base cutoff current
= 0
I
V
EB = 4 V, I
C
DC current gain2)
hFE
–
1000
2000
–
–
–
–
I
C
= 150 mA, VCE = 10 V
= 500 mA, VCE = 10 V
IC
Collector-emitter saturation voltage2)
V
CEsat
BEsat
V
–
–
–
–
1.3
1.8
IC
= 500 mA, I
B
= 0.5 mA
IC
= 1 A, I = 1 mA
B
Base-emitter saturation voltage2)
V
–
–
–
–
1.9
2.2
I
C
= 500 mA, I
B
= 0.5 mA
IC
= 1 A, I = 1 mA
B
AC characteristics
Transition frequency
fT
–
200
–
MHz
IC
= 100 mA, VCE = 5 V, f = 100 MHz
Switching times
I
C
= 500 mA, IB1 = IB2 = 0.5 mA
t
t
on
off
–
–
400
1500
–
–
ns
ns
(see diagrams)
1)
Compare RBE for thermal stability.
Pulse test conditions: t ≤ 300 µs, D = 2 %.
2)
Semiconductor Group
2
BSP 60
… BSP 62
Switching time test circuit
Switching time waveform
Semiconductor Group
3
BSP 60
… BSP 62
Total power dissipation Ptot = f (T
A
*; TS
)
External resistance RBE = f (T )**
A
* Package mounted on epoxy
VCB = VCE max
** RBE max for thermal stability
Permissible pulse load Ptot max / Ptot DC = f (t
p)
DC current gain hFE = f (I )
C
VCE = 10 V
Semiconductor Group
4
BSP 60
… BSP 62
Collector-emitter saturation voltage
-parameter
Base-emitter saturation voltage
-parameter
IC
= f (VCE sat), I
B
IC
= f (VBE sat), I
B
Transition frequency f
T
= f (I )
C
V
CE = 10 V, f = 100 MHz
Semiconductor Group
5
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