Q67040-S4628 [INFINEON]
LightMOS Power Transistor; LightMOS功率晶体管
| 型号： | Q67040-S4628 |
| 厂家： | 
Infineon |
| 描述： | LightMOS Power Transistor |
| 文件： | 总15页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ILA03N60, ILP03N60
ILB03N60, ILD03N60
LightMOS Power Transistor
C
•
New high voltage technology designed for ZVS-switching in lamp
ballasts
P-TO-220-3-31
G
•
•
•
•
•
•
IGBT with integrated reverse diode
4A current rating for reverse diode
Up to 10 times lower gate capacitance than MOSFET
Avalanche rated
E
(TO-220 FullPak)
150°C operating temperature
FullPak isolates 2.5 kV AC (1 min.)
P-TO-263-3-2 (D2-PAK)
(TO-263AB)
P-TO-252-3-1 (D-PAK)
(TO-252AA)
P-TO-220-3-1
(TO-220AB)
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Package
Ordering Code
ILA03N60
ILP03N60
ILB03N60
ILD03N60
Maximum Ratings
600V
600V
600V
600V
3.0A
3.0A
3.0A
3.0A
2.9V
2.9V
2.9V
2.9V
150°C
150°C
150°C
150°C
P-TO-220-3-31 Q67040-S4626
P-TO-220-3-1
P-TO-263-3-2
P-TO-252-3-1
Q67040-S4628
Q67040-S4627
Q67040-S4625
Value
ILA03N60
Parameter
Symbol
Unit
Others
Collector-emitter voltage
DC collector current
VCE
IC
600
V
A
3
2.2
4.5
3
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax, tp < 10 ms
Pulsed collector current, tp limited by Tjmax
ICpuls
IF
IFpuls
EAS
9
5.5
4
2.2
4
2.5
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax, tp < 10 ms
Diode pulsed current, tp limited by Tjmax
9
5.5
0.32
Avalanche energy, single pulse
mJ
IC=0.4A, VCE=50V
Gate-emitter voltage
Reverse diode dv/dt
VGE
dv/dt
V
V/ns
±30
11
IC ≤ 3A, VCE ≤ 450V, Tjmax ≤ 150°C
Power dissipation (TC = 25°C)
Operating junction and storage temperature
Ptot
Tstg
Ts
16.5
27
W
-55...+150
255
°C
Soldering temperature
D-Pak
Others
for 10 s (according to JEDEC J-STA-020A)
220
1 Reverse diode of transistor is commutated with same device according to figure C. With application
relevant values IC ≤ 1.5A, CSnubber = 1 nF and RG ≥ 50Ω, dv/dt of the reverse diode is within its specification.
1
Rev. 1.2 Apr-04
Power Semiconductors
ILA03N60, ILP03N60
ILB03N60, ILD03N60
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
RthJC
P-TO-220-3-31
Other packages
7.6
4.7
12
10
65
62
K/W
RthJCD
TO-220-3-31
Other packages
P-TO-220-3-31
P-TO-220-3-1
Therm. resistance, junction - ambient RthJA
SMD version, device on PCB:
@ min. footprint
RthJA
P-TO-263-3-2
P-TO-252-3-1
75
50
62
40
@ 6cm2 cooling area1
@ min. footprint
@ 6cm2 cooling area1
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage V(BR)C ES
V
GE=0V, IC=0.5mA
600
-
-
-
-
V
Collector-emitter avalanche
V(BR)C E VGS=0V; IC=0.4A
850
breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
VC E(sa t) GE=10V, IC=3.0A
V
-
-
2.3
2.7
2.9
Tj=25°C
Tj=150°C
V
GE=10V, IC=0.8A
-
-
1.5
1.5
-
-
Tj=25°C
Tj=150°C
VF
VGE=0V, IF=3.0A
-
-
1.5
1.6
1.8
Tj=25°C
Tj=150°C
V
GE=0V, IF=0.8A
V
V
-
-
1.0
1.0
-
-
Tj=25°C
Tj=150°C
IC=30µA,VCE=VGE
Gate-emitter threshold voltage
VGE(th )
2.1
3.0
3.9
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
2
Rev. 1.2 Apr-04
Power Semiconductors
ILA03N60, ILP03N60
ILB03N60, ILD03N60
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
continued
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Zero gate voltage collector current
IC ES
V
C E=600V,VGE=0V
µA
-
-
1
-
20
250
Tj=25°C
Tj=150°C
Gate-emitter leakage current
Transconductance
IGES
gfs
V
V
C E=0V,VGE=20V
C E=20V, IC=3.0A
-
-
-
100
-
nA
S
1.5
Capacities, Gate Charge, at Tj=25 °C
Parameter
Value
typ.
110
6
4
3.7
Symbol
Conditions
Unit
min.
max.
Input capacitance
Ciss
Coss
Crss
V
V
C E=25V,
GE=0V,
f=1MHz
-
-
-
-
-
-
pF
Output capacitance
Reverse transfer capacitance
Effective Output Capacitance
Co(er)
V
V
V
GE=0V,
pF
nC
(Energy related)
C E=0V to 480V
C E=400V,
Gate to emitter charge
Gate to collector charge
Gate total charge
Gate plateau voltage
Gate to emitter charge
Gate to collector charge
Gate total charge
QGE
QGC
QG
-
-
-
-
-
-
-
-
1
-
-
-
-
-
-
-
-
IC=3.0A,
5.5
8.5
6.5
0.5
4.0
8
V
GE=10V
Vm
V
nC
QGE
QGC
QG
V
C E=400V,
IC=0.8A,
V
GE=10V
Gate plateau voltage
Vm
3.5
V
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Turn-off energy
td (on)
tr
td (off)
V
CC=400V,
-
-
-
-
-
-
-
15
35
100
100
12
-
-
-
-
-
-
-
ns
IC=0.8A,
V
GE=0/10V,
RG=60Ω,
CSnubber =0nF
(CSnubber: Snubber
capacitor)
tf
Eon
3
µJ
Eo ff
Eo ff
20
8
CSnubber =1nF
3 Eon includes SDP04S60 diode commutation losses
3
Rev. 1.2 Apr-04
Power Semiconductors
ILA03N60, ILP03N60
ILB03N60, ILD03N60
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Turn-off energy
td (on)
tr
td (off)
V
CC=400V,
IC=0.8A,
GE=0/10V,
RG=60Ω,
-
-
-
-
-
-
-
20
45
120
120
15
-
-
-
-
-
-
-
ns
V
C
Snubber=0nF
tf
Eon
(CSnubber: Snubber
3
µJ
capacitor)
Eo ff
Eo ff
28
12
CSnubber =1nF
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter Symbol Conditions
Value
typ.
Unit
min.
max.
Reverse diode Characteristic (switching in half bridge configuration with same transistor according
to figure C)
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
trr
Qrr
Irrm
dirr/dt
VR=400V,
IF=0.8A,
-
-
-
-
90
0.27
5.5
-
-
-
-
ns
µC
A
V
GE=0/10V,
RG=80Ω
Peak rate of fall of reverse recovery
300
A/µs
current
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
trr
Qrr
Irrm
dirr/dt
VR=400V,
IF=3A,
-
-
-
-
250
0.75
8
-
-
-
-
ns
µC
A
V
GE=0/10V,
RG=80Ω
Peak rate of fall of reverse recovery
300
A/µs
current
4
Rev. 1.2 Apr-04
Power Semiconductors
ILA03N60, ILP03N60
ILB03N60, ILD03N60
10A
1A
10A
tp=4µs
8µs
tp=4µs
8µs
15µs
15µs
1A
50µs
50µs
200µs
1ms
200µs
0,1A
0,01A
0,1A
0,01A
1ms
DC
DC
1V
10V
100V
1000V
1V
10V
100V
1000V
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1:
(FullPak)
Safe operating area
Figure 2:
Safe operating area
(Other Packages)
(D = 0, TC = 25°C, Tj ≤ 150°C)
(D = 0, TC = 25°C, Tj ≤ 150°C)
30W
25W
6A
4A
Other Packages
20W
15W
10W
5W
Other Packages
Fullpak
2A
0A
FullPak
0W
25°C
50°C
75°C
100°C 125°C
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
Figure 4. Collector current as a function of
of case temperature
(Tj ≤ 150°C)
case temperature
(VGE ≤ 10V, Tj ≤ 150°C)
5
Rev. 1.2 Apr-04
Power Semiconductors
ILA03N60, ILP03N60
ILB03N60, ILD03N60
10A
10A
8A
6A
4A
2A
0A
8A
V
GE=15V
10V
9V
V
GE=15V
10V
6A
4A
2A
0A
9V
8V
7V
6V
5V
8V
7V
6V
5V
0V
1V
2V
3V
4V
5V
6V
0V
1V
2V
3V
4V
5V
6V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
Figure 6. Typical output characteristics
(Tj = 25°C)
(Tj = 150°C)
4.5V
8A
6A
4A
2A
0A
Tj= +25°C
Ic=4A
4.0V
+150°C
3.5V
3.0V
2.5V
2.0V
1.5V
1.0V
Ic=3A
Ic=1A
Ic=0.5A
0V
2V
4V
6V
8V
10V
12V
-50°C
0°C
50°C
100°C
150°C
V
GE, GATE-EMITTER VOLTAGE
Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
(VCE = 20V)
temperature
(VGE = 10V)
6
Rev. 1.2 Apr-04
Power Semiconductors
ILA03N60, ILP03N60
ILB03N60, ILD03N60
td(off)
tf
tf
100ns
100ns
td(off)
tr
tr
td(on)
td(on)
10ns
10ns
0.5A
20Ω
40Ω
60Ω
80Ω
100Ω 120Ω
1.0A
1.5A
2.0A
2.5A
3.0A
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
(inductive load, Tj = 150°C, VCE = 400V,
V
GE = 0/+10V, IC = 1A,
V
GE = 0/+10V, RG = 80Ω,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
80µJ
*) Eon includes losses
3.4V
3.2V
3.0V
2.8V
2.6V
2.4V
2.2V
2.0V
due to diode recovery.
70µJ
60µJ
50µJ
40µJ
30µJ
20µJ
10µJ
0µJ
Eoff
Eon*
E
off, CSnubber=1nF
0,5A
1,0A
1,5A
2,0A
2,5A
3,0A
-50°C
0°C
50°C
100°C 150°C
Tj, JUNCTION TEMPERATURE
IC, COLLECTOR CURRENT
Figure 12. Gate-emitter threshold voltage
Figure 13. Typical switching energy losses
as a function of collector current
as a function of junction temperature
(IC = 30µA)
(inductive load, Tj = 150°C, VCE = 400V,
V
GE = 0/+10V, RG = 80Ω, CSnubber=0/1nF
Dynamic test circuit in Figure E)
7
Rev. 1.2 Apr-04
Power Semiconductors
ILA03N60, ILP03N60
ILB03N60, ILD03N60
35µJ
34µJ
32µJ
30µJ
28µJ
26µJ
24µJ
22µJ
20µJ
18µJ
16µJ
14µJ
12µJ
10µJ
*) Eon includes losses
Eoff
due to diode recovery.
30µJ
*) Eon includes losses
due to diode recovery.
25µJ
Eoff
Eon*
20µJ
15µJ
Eon*
E
off, CSnubber=1nF
10µJ
E
off, CSnubber=1nF
5µJ
20Ω
40Ω
60Ω
80Ω
100Ω 120Ω
50°C
100°C
150°C
RG, GATE RESISTOR
Tj, JUNCTION TEMPERATURE
Figure 14. Typical switching energy losses
as a function of gate resistor
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+10V,
(inductive load, Tj = 150°C, VCE = 400V,
V
GE = 0/+10V, IC = 1A, CSnubber=0/1nF
IC = 1A, RG = 80Ω, CSnubber=0/1nF
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
14V
14V
12V
12V
120V
120V
480V
480V
10V
8V
6V
4V
2V
0V
10V
8V
6V
4V
2V
0V
0nC
2nC
4nC
6nC
8nC 10nC 12nC
0nC
2nC
4nC
6nC
8nC 10nC 12nC
Q
GE, GATE CHARGE
Q
GE, GATE CHARGE
Figure 16. Typical gate charge
Figure 17. Typical gate charge
(IC = 3A)
(IC = 0.8A)
8
Rev. 1.2 Apr-04
Power Semiconductors
ILA03N60, ILP03N60
ILB03N60, ILD03N60
101K/W
100K/W
10-1K/W
101K/W
R , ( K / W )
1.76
τ , ( s )
R , ( K / W )
3.46
τ , ( s )
5.30
3.99
2.98
1.59
0.0719
0.00654
0.798
0.368
0.620
0.915
0.662
1.84
0.00973
D=0.5
8.52*10-4
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
100K/W
0.2
0.1
0.05
0.02
0.01
single pulse
R1
R2
R1
R2
C1=τ1/R1 C2=τ2/R2
C1=τ1/R1 C2=τ2/R2
10-1K/W
10µs 100µs 1ms 10ms 100ms 1s
10s 100s
10µs 100µs 1ms 10ms 100ms 1s
tp, PULSE WIDTH
10s 100s
tp, PULSE WIDTH
Figure 18: IGBT transient thermal
Figure 19: Diode transient thermal
impedance as a function of pulse width
(FullPak)
impedance as a function of pulse width
(FullPak)
(D = tp / T)
(D = tp / T)
101K/W
D=0.5
0.2
100K/W
R , ( K / W )
0.907
τ , ( s )
4.532*10-2
5.957*10-3
8.797*10-4
1.667*10-4
R , ( K / W )
1.088
τ , ( s )
0.1
3.762
4.043
1.186
1.856
1.458
0.0466
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
2.220*10-3
3.616*10-4
100K/W
0.05
0.02
0.01
single pulse
R1
R2
R1
R2
10-1K/W
C1=τ1/R1 C2=τ2/R2
C1=τ1/R1 C2=τ2/R2
10-1K/W
10µs
100µs
1ms
10ms
100ms
1s
10µs
100µs
1ms
10ms
100ms
1s
tp, PULSE WIDTH
tp, PULSE WIDTH
Figure 20: IGBT transient thermal
Figure 21: Diode transient thermal
impedance as a function of pulse width
impedance as a function of pulse width
(Other Packages)
(Other Packages)
(D = tp / T)
(D = tp / T)
9
Rev. 1.2 Apr-04
Power Semiconductors
ILA03N60, ILP03N60
ILB03N60, ILD03N60
4A
3A
2A
1A
1.7V
IF=4A
1.6V
1.5V
IF=2A
1.4V
1.3V
150°C
100°C
25°C
-55°C
IF=1A
1.2V
1.1V
IF=0.5A
1.0V
0A
0.9V
0.0V
0.5V
1.0V
1.5V
-40°C
0°C
40°C
80°C
120°C
VF, FORWARD VOLTAGE
Tj, JUNCTION TEMPERATURE
Figure 20. Typical diode forward current as
a function of forward voltage
Figure 21. Typical diode forward voltage as
a function of junction temperature
Ciss
100pF
10pF
Coss
Crss
0V
10V
20V
30V
40V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 19. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
10
Rev. 1.2 Apr-04
Power Semiconductors
ILA03N60, ILP03N60
ILB03N60, ILD03N60
90 % V
GE
10% VGE
t
VC
E
90 % VCE
90% V
C E
10% VCE
10 % VCE
t
td(off)
td(on)
Figure A. Definition of switching times
tf
tr
½ L
σ
I,v
tr r=tS+tF
dI /dt
D.U.T
F
(Diode)
Qrr =QS+QF
C
σ
t
rr
I
tS
tF
F
U
t
10% Irrm
QS
QF
90% I
Irrm
D.U.T
dIrr /dt
rrm
V
R
RG
(IGBT)
½ L
σ
Figure B. Definition of diodes switching characteristics
Figure C. Dynamic test circuit
11
Rev. 1.2 Apr-04
Power Semiconductors
ILA03N60, ILP03N60
ILB03N60, ILD03N60
dimensions
P-TO220-3-31
symbol
[mm]
[inch]
min
10.37
15.86
0.65
max
10.63
16.12
0.78
min
max
A
B
C
D
E
F
0.4084
0.6245
0.0256
0.4184
0.6345
0.0306
2.95 typ.
3.15
0.1160 typ.
3.25
6.56
13.73
3.43
0.63
1.36
0.124
0.128
0.2584
0.5404
0.135
6.05
13.47
3.18
0.45
1.23
0.2384
0.5304
0.125
G
H
K
L
0.0177
0.0484
0.0247
0.0534
M
N
P
T
2.54 typ.
0.100 typ.
4.57
2.57
2.51
4.83
2.83
2.62
0.1800
0.1013
0.0990
0.1900
0.1113
0.1030
Please refer to mounting instructions (application note AN-TO220-3-31-01)
dimensions
[mm]
TO-220AB
symbol
[inch]
min
9.70
14.88
0.65
3.55
2.60
6.00
13.00
4.35
0.38
0.95
max
min
max
A
B
C
D
E
F
10.30
15.95
0.86
3.89
3.00
6.80
14.00
4.75
0.65
1.32
0.3819
0.5858
0.0256
0.1398
0.1024
0.2362
0.5118
0.1713
0.0150
0.0374
0.4055
0.6280
0.0339
0.1531
0.1181
0.2677
0.5512
0.1870
0.0256
0.0520
G
H
K
L
M
N
P
T
2.54 typ.
0.1 typ.
4.30
4.50
1.40
2.72
0.1693
0.0461
0.0906
0.1772
0.0551
0.1071
1.17
2.30
12
Rev. 1.2 Apr-04
Power Semiconductors
ILA03N60, ILP03N60
ILB03N60, ILD03N60
TO-263AB (D2Pak)
dimensions
symbol
[mm]
[inch]
min
9.80
0.70
1.00
1.03
max
10.20
1.30
1.60
1.07
min
max
A
B
C
D
E
F
0.3858
0.0276
0.0394
0.0406
0.4016
0.0512
0.0630
0.0421
2.54 typ.
0.65 0.85
5.08 typ.
0.1 typ.
0.0256
0.0335
G
H
K
L
0.2 typ.
4.30
4.50
1.37
9.45
2.50
0.1693
0.0461
0.3563
0.0906
0.1772
0.0539
0.3720
0.0984
1.17
9.05
2.30
M
N
P
Q
R
S
T
15 typ.
0.5906 typ.
0.00
4.20
0.20
5.20
0.0000
0.1654
0.0079
0.2047
8° max
8° max
2.40
0.40
3.00
0.60
0.0945
0.0157
0.1181
0.0236
U
V
W
X
Y
Z
10.80
1.15
6.23
4.60
9.40
16.15
0.4252
0.0453
0.2453
0.1811
0.3701
0.6358
13
Rev. 1.2 Apr-04
Power Semiconductors
ILA03N60, ILP03N60
ILB03N60, ILD03N60
dimensions
TO-252AA (DPak)
symbol
[mm]
symbol
min
min
6.40
5.25
A
B
C
D
E
F
A
B
C
D
6.40
5.25
A
B
C
D
(0.65)
0.63
(0.65)
0.63
2.28
E
2.19
0.76
0.90
5.97
9.40
0.46
0.87
0.51
5.00
4.17
0.26
-
F
G
H
K
L
2.19
0.76
0.90
5.97
9.40
0.46
0.87
0.51
5.00
4.17
0.26
-
F
G
H
K
L
G
H
K
L
M
N
P
R
S
T
M
N
P
R
S
T
M
N
P
R
S
T
U
U
U
14
Rev. 1.2 Apr-04
Power Semiconductors
ILA03N60, ILP03N60
ILB03N60, ILD03N60
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2003
All Rights Reserved.
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descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
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please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
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15
Rev. 1.2 Apr-04
Power Semiconductors
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