Q67040S4726_技术文档

IGW75N60T

q

TrenchStop Series

Low Loss IGBT in Trench and Fieldstop technology

C

•

Very low V_CE(sat)1.5 V (typ.)

Maximum Junction Temperature 175 °C

Short circuit withstand time – 5µs

Designed for :

G

E

- Frequency Converters

- Uninterrupted Power Supply

•

Trench and Fieldstop technology for 600 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

P-TO-247-3-1

(TO-220AC)

- low V_CE(sat)

•

Positive temperature coefficient in V_CE(sat)

Low EMI

Low Gate Charge

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}

T_j,max

Marking Code Package

Ordering Code

Q67040S4726

IGW75N60T

600V

75A

1.5V

G75T60

TO-247

175°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current, limited by T_jmax

T_C= 25°C

V_CE

I_C

600

V

A

150

75

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

I_Cpuls

-

V_GE

t_SC

225

±20

5

Turn off safe operating area (V_CE≤ 600V, T_j≤ 175°C)

Gate-emitter voltage

V

Short circuit withstand time¹⁾

µs

V

_GE= 15V, V_CC≤ 400V, T_j≤ 150°C

P_tot

T_j

T_stg

-

428

W

Power dissipation T_C= 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

-40...+175

-55...+175

260

°C

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

1

Rev. 2.1 Dec-04

Power Semiconductors

IGW75N60T

q

TrenchStop Series

Thermal Resistance

Parameter

Symbol

Conditions

TO-247

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

Thermal resistance,

junction – ambient

R_thJC

R_thJA

0.35

40

K/W

TO-247 AC

Electrical Characteristic, at T_j= 25 °C, unless otherwise specified

Value

Typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Static Characteristic

Collector-emitter breakdown voltage V_{(BR)C ES}

V

_GE=0V, I_C=0.2mA

600

-

V

Collector-emitter saturation voltage

V_{C E(sa t)}V_GE= 15V, I_C=75A

T_j=25°C

-

1.5

1.9

2.0

-

T_j=175°C

Gate-emitter threshold voltage

Zero gate voltage collector current

V_{GE(th )}

I_{C ES}

I_C=1.2mA,V_CE=V_GE

4.1

4.9

5.7

V

_{C E}=600V,

µA

V

_GE=0V

T_j=25°C

T_j=175°C

-

41

-

40

1000

100

-

Gate-emitter leakage current

Transconductance

I_GES

g_fs

V

_{C E}=0V,V_GE=20V

_{C E}=20V, I_C=75A

nA

S

Integrated gate resistor

R_Gint

Ω

Dynamic Characteristic

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate charge

C_iss

C_oss

C_rss

V

_{C E}=25V,

_GE=0V,

-

pF

4620

288

137

470

f=1MHz

V

Q_{Ga te}

_CC=480V, I_C=75A

_GE=15V

nC

nH

A

Internal emitter inductance

L_E

TO-247-3-1

-

7

-

measured 5mm (0.197 in.) from case

Short circuit collector current¹⁾

I_{C (SC)}

687.5

V

_GE=15V,t_SC≤5µs

V_CC= 400V,

T_j≤ 150°C

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

2

Rev. 2.1 Dec-04

Power Semiconductors

IGW75N60T

q

TrenchStop Series

Switching Characteristic, Inductive Load, at T_j=25 °C

Value

Unit

Parameter

Symbol

Conditions

min.

Typ.

max.

IGBT Characteristic

Turn-on delay time

Rise time

t_{d (on)}

t_r

t_{d (off)}

t_f

E_on

E_{o ff}

E_ts

-

33

36

330

35

2.0

2.5

4.5

-

ns

T_j=25°C,

V

_CC=400V,I_C=75A,

_GE=0/15V,

Turn-off delay time

Fall time

R_G=5Ω,

L_σ²⁾=100nH,

C_σ²⁾=39pF

Turn-on energy¹⁾

Turn-off energy

Total switching energy

mJ

Energy losses include

“tail” and diode

reverse recovery.

Switching Characteristic, Inductive Load, at T_j=175 °C

Value

Typ.

Parameter

Symbol

Conditions

Unit

min.

max.

IGBT Characteristic

Turn-on delay time

Rise time

t_{d (on)}

t_r

t_{d (off)}

t_f

E_on

E_{o ff}

E_ts

-

32

37

363

38

2.9

5.8

-

ns

T_j=175°C,

V

_CC=400V,I_C=75A,

_GE=0/15V,

Turn-off delay time

Fall time

R_G= 5Ω

L_σ²⁾=100nH,

C_σ²⁾=39pF

Turn-on energy¹⁾

Turn-off energy

Total switching energy

mJ

Energy losses include

“tail” and diode

reverse recovery.

¹⁾Includes Reverse Recovery Losses from IKW75N60T due to dynamic test circuit in Figure E.

²⁾Leakage inductance L_σand Stray capacity C_σdue to dynamic test circuit in Figure E.

3

Rev. 2.1 Dec-04

Power Semiconductors

IGW75N60T

q

TrenchStop Series

t_p=1µs

200A

50A

00A

50A

0A

100A

10A

10µs

50µs

T_C=80°C

T_C=110°C

1ms

I_c

10ms

DC

1A

1V

I_c

10V

100V

1000V

10Hz

100Hz

1kHz

10kHz 100kHz

f, SWITCHING FREQUENCY

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

Figure 2. Safe operating area

switching frequency

(D = 0, T_C= 25°C, T_j≤175°C;

(T_j≤ 175°C, D = 0.5, V_CE= 400V,

V_GE=15V)

V

_GE= 0/+15V, R_G= 5Ω)

400W

350W

300W

250W

200W

150W

100W

50W

120A

90A

60A

30A

0A

0W

25°C

75°C

125°C

25°C

50°C

75°C 100°C 125°C 150°C

T_C, CASE TEMPERATURE

Figure 3. Power dissipation as a function of

case temperature

Figure 4. DC Collector current as a function

of case temperature

(T_j≤ 175°C)

(V_GE≥ 15V, T_j≤ 175°C)

4

Rev. 2.1 Dec-04

Power Semiconductors

IGW75N60T

q

TrenchStop Series

120A

90A

60A

30A

0A

120A

V

_GE=20V

15V

V

_GE=20V

15V

90A

60A

30A

0A

13V

11V

9V

13V

11V

9V

7V

0V

1V

2V

3V

0V

1V

2V

3V

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

Figure 6. Typical output characteristic

(T_j= 25°C)

(T_j= 175°C)

2.5V

2.0V

1.5V

1.0V

0.5V

0.0V

I_C=150A

80A

60A

I_C=75A

40A

I_C=37.5A

T_J=175°C

20A

25°C

0A

0°C

50°C

100°C

150°C

0V

2V

4V

6V

8V

V

_GE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic

T_J, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter

(V_CE=20V)

saturation voltage as a function of

junction temperature

(V_GE= 15V)

5

Rev. 2.1 Dec-04

Power Semiconductors

IGW75N60T

q

TrenchStop Series

t_d(off)

100ns

t_f

t_r

t_d(on)

t_r

40A

I_C, COLLECTOR CURRENT

10ns

0A

80A

120A

5Ω

10Ω

15Ω

R_G, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, T_J=175°C,

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, T_J= 175°C,

V

_CE= 400V, V_GE= 0/15V, R_G= 5ꢀ,

V_CE= 400V, V_GE= 0/15V, I_C= 75A,

Dynamic test circuit in Figure E)

7V

6V

5V

4V

3V

2V

1V

0V

t_d(off)

max.

typ.

min.

100ns

t_f

t_r

t_d(on)

25°C

50°C

75°C 100°C 125°C 150°C

-50°C

0°C

50°C

100°C

150°C

T_J, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, V_CE= 400V,

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(I_C= 1.2mA)

V

_GE= 0/15V, I_C= 75A, R_G=5ꢀ,

Dynamic test circuit in Figure E)

6

Rev. 2.1 Dec-04

Power Semiconductors

IGW75N60T

q

TrenchStop Series

*) E_onand E_tsinclude losses

due to diode recovery

*) E_onand E_tsinclude losses

E_ts*

due to diode recovery

E_ts*

8.0mJ

6.0mJ

4.0mJ

2.0mJ

0.0mJ

12.0mJ

8.0mJ

4.0mJ

0.0mJ

E_on*

E_on

*

E_off

0A 20A 40A 60A 80A 100A 120A 140A

0Ω

5Ω

10Ω

15Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, T_J= 175°C,

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, T_J= 175°C,

V

_CE= 400V, V_GE= 0/15V, R_G= 5ꢀ,

V_CE= 400V, V_GE= 0/15V, I_C= 75A,

Dynamic test circuit in Figure E)

*) E_onand E_tsinclude losses

due to diode recovery

*) E_onand E_tsinclude losses

E_ts*

due to diode recovery

5.0mJ

4.0mJ

3.0mJ

2.0mJ

1.0mJ

0.0mJ

8mJ

6mJ

4mJ

2mJ

0mJ

E_on

*

E_ts*

E_off

E_on*

25°C 50°C

75°C 100°C 125°C 150°C

300V 350V 400V 450V 500V 550V

T_J, JUNCTION TEMPERATURE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses

as a function of junction

temperature

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, V_CE= 400V,

(inductive load, T_J= 175°C,

V

_GE= 0/15V, I_C= 75A, R_G= 5ꢀ,

V_GE= 0/15V, I_C= 75A, R_G= 5ꢀ,

Dynamic test circuit in Figure E)

7

Rev. 2.1 Dec-04

Power Semiconductors

IGW75N60T

q

TrenchStop Series

C_iss

15V

10V

5V

1nF

120V

480V

C_oss

C_rss

100pF

0V

10V

20V

0nC

100nC 200nC 300nC 400nC

_GE, GATE CHARGE

Q

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

Figure 18. Typical capacitance as a function

(I_C=75 A)

of collector-emitter voltage

(V_GE=0V, f = 1 MHz)

12µs

10µs

8µs

1000A

750A

500A

250A

0A

6µs

4µs

2µs

0µs

10V

11V

12V

13V

14V

12V

14V

16V

18V

V

_GE, GATE-EMITTETR VOLTAGE

V_GE, GATE-EMITETR VOLTAGE

Figure 19. Typical short circuit collector

current as a function of gate-

emitter voltage

Figure 20. Short circuit withstand time as a

function of gate-emitter voltage

(V_CE=600V, start at T_J=25°C,

T

_Jmax<150°C)

(V_CE≤ 400V, T_j≤ 150°C)

8

Rev. 2.1 Dec-04

Power Semiconductors

IGW75N60T

q

TrenchStop Series

D=0.5

10^-1K/W

10^-2K/W

10^-3K/W

0.2

0.1

R , ( K / W )

0.1968

τ , ( s )

0.115504

0.009340

0.000823

0.000119

R₂

0.05

0.0733

0.0509

0.02

0.01

0.0290

R₁

C₁=τ₁/R₁C₂=τ₂/R₂

single pulse

1µs 10µs 100µs 1ms 10ms 100ms

t_P, PULSE WIDTH

Figure 21. IGBT transient thermal resistance

(D = t_p/ T)

9

Rev. 2.1 Dec-04

Power Semiconductors

IGW75N60T

q

TrenchStop Series

dimensions

TO-247AC

symbol

[mm]

[inch]

min

4.78

2.29

1.78

1.09

1.73

2.67

max

5.28

2.51

2.29

1.32

2.06

3.18

min

max

A

B

C

D

E

F

0.1882 0.2079

0.0902 0.0988

0.0701 0.0902

0.0429 0.0520

0.0681 0.0811

0.1051 0.1252

0.0299 max

G

H

K

L

0.76 max

20.80

21.16

16.15

5.72

0.8189 0.8331

0.6161 0.6358

0.2051 0.2252

0.7799 0.8142

0.1402 0.1941

0.1421

15.65

5.21

M

N

19.81

3.560

20.68

4.930

3.61

P

Q

6.12

6.22

0.2409 0.2449

10

Rev. 2.1 Dec-04

Power Semiconductors

IGW75N60T

q

TrenchStop Series

i,v

t_{r r}=t_S+t_F

di_F/dt

Q_{r r}=Q_S+Q_F

t_{r r}

I_F

t_S

t_F

t

Q_S

10% I_{r r m}

Q_F

I_{r r m}

di_{r r}/dt

V_R

90% I_{r r m}

Figure C. Definition of diodes

switching characteristics

τ₁

τ₂

r ₂

τ_n

r₁

r _n

T (t)

j

p(t)

r ₂

r₁

r_n

Figure A. Definition of switching times

T

C

Figure D. Thermal equivalent

circuit

Figure E. Dynamic test circuit

Figure B. Definition of switching losses

11

Rev. 2.1 Dec-04

Power Semiconductors

IGW75N60T

q

TrenchStop Series

Published by

Infineon Technologies AG,

Bereich Kommunikation

St.-Martin-Strasse 53,

D-81541 München

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,

descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon

Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of

that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or

systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect

human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

12

Rev. 2.1 Dec-04

Power Semiconductors


型号：	Q67040S4726
厂家：	Infineon
描述：	Low Loss IGBT in Trench and Fieldstop technology 低损耗IGBT的沟槽场终止和技术双极性晶体管
文件：	总12页 (文件大小：371K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Q67040S4726 [INFINEON]

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