Q67050-A4338-A101 [INFINEON]
IGBT Chip in NPT-technology; IGBT芯片在NPT技术
| 型号： | Q67050-A4338-A101 |
| 厂家： | 
Infineon |
| 描述： | IGBT Chip in NPT-technology |
| 文件： | 总4页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SIGC42T120CS2
IGBT Chip in NPT-technology
FEATURES:
·
·
·
·
·
1200V NPT technology 175µm chip
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
This chip is used for:
IGBT Modules
C
·
Applications:
drives, SMPS, resonant
applications
G
·
Chip Type
VCE
ICn
Die Size
Package
Ordering Code
Q67050-
A4338-A101
SIGC42T120CS2 1200V 25A
6.59 x 6.49 mm2
sawn on foil
MECHANICAL PARAMETER:
mm2
Raster size
6.59 x 6.49
Emitter pad size
Gate pad size
2 x (2.18 x 1.58)
1.06 x 0.65
42.8 / 33.5
180
Area total / active
Thickness
µm
mm
grd
Wafer size
150
Flat position
90
Max.possible chips per wafer
Passivation frontside
Emitter metallization
334 pcs
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Collector metallization
Die bond
electrically conductive glue or solder
Wire bond
Al, <500µm
Reject Ink Dot Size
Æ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Recommended Storage Environment
Edited by INFINEON Technologies AI PS DD HV3, L 7151-T, Edition 2, 03.09.2003
SIGC42T120CS2
MAXIMUM RATINGS:
Parameter
Symbol
VCE
Value
Unit
Collector-emitter voltage, T =25 °C
1200
V
A
j
1 )
DC collector current, limited by T
IC
jmax
Pulsed collector current, tp limited by T
Gate emitter voltage
Icpuls
VGE
75
±20
A
jmax
V
Operating junction and storage temperature
1 ) depending on thermal properties of assembly
Tj, Ts t g
-55 ... +150
°C
STATIC CHARACTERISTICS (tested on chip), T =25 °C, unless otherwise specified:
j
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V(BR)CES
VCE(sat)
VGE=0V , IC= 1.5mA
VGE=15V, IC=25A
1200
2.7
3.2
5.5
3.7
6.5
3
V
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
VGE(th)
ICES
IC=1mA , VGE=VCE
VCE=1200V , VGE=0V
VCE=0V , VGE=20V
4.5
µA
nA
IGES
120
ELECTRICAL CHARACTERISTICS (tested at component):
Value
Parameter
Symbol
Unit
Conditions
VC E=25V,
min. typ.
max.
Input capacitance
Ciss
Coss
Crss
-
-
-
1.65
nF
VGE=0V,
f=1MHz
Output capacitance
0.25
0.11
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (tested at component), Inductive Load
Value
Conditions 1)
Parameter
Symbol
Unit
min. typ.
max.
ns
Turn-on delay time
Rise time
td(on)
tr
td(of f )
tf
-
-
-
-
60
50
Tj=125° C
VC C =600V,
IC =25A,
Turn-off delay time
Fall time
400
60
VGE=-15/15V,
RG= 27W
1) values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L 7151-T, Edition 2, 03.09.2003
SIGC42T120CS2
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L 7151-T, Edition 2, 03.09.2003
SIGC42T120CS2
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
Eupec
FP25R12KS4C
DESCRIPTION:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
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Edited by INFINEON Technologies AI PS DD HV3, L 7151-T, Edition 2, 03.09.2003
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