Q68000-A6478 [INFINEON]
NPN Silicon Transistors for High Voltages; NPN硅晶体管高电压
| 型号： | Q68000-A6478 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon Transistors for High Voltages |
| 文件： | 总4页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon Transistors for High Voltages
SMBTA 42
SMBTA 43
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary types: SMBTA 92, SMBTA 93 (PNP)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
SMBTA 42
SMBTA 43
s1D
s1E
Q68000-A6478
Q68000-A6482
B
E
C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
SMBTA 42 SMBTA 43
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
CE0
CB0
EB0
300
300
200
200
V
V
V
6
IC
500
100
mA
Base current
IB
Total power dissipation, T
S
= 74 ˚C
P
tot
360
mW
˚C
Junction temperature
Tj
150
Storage temperature range
T
stg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 280
≤ 210
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
SMBTA 42
SMBTA 43
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
IC
= 1 mA
SMBTA 42
SMBTA 43
300
200
–
–
–
–
Collector-base breakdown voltage
IC
= 100 µA
SMBTA 42
SMBTA 43
300
200
–
–
–
–
Emitter-base breakdown voltage
= 100 µA
6
–
–
IE
Collector-base cutoff current
ICB0
V
V
V
V
CB = 200 V
CB = 160 V
CB = 200 V, T
CB = 160 V, T
SMBTA 42
SMBTA 43
SMBTA 42
SMBTA 43
–
–
–
–
–
–
–
–
100
100
20
nA
nA
µA
µA
A
A
= 150 ˚C
= 150 ˚C
20
Emitter-base cutoff current
IEB0
–
–
100
nA
VEB = 3 V
DC current gain
hFE
–
IC
IC
IC
= 1 mA, VCE = 10 V
= 10 mA, VCE = 10 V1)
= 30 mA, VCE = 10 V1)
25
40
40
40
–
–
–
–
–
–
–
–
SMBTA 42
SMBTA 43
Collector-emitter saturation voltage1)
V
V
CEsat
BEsat
V
–
–
–
–
0.5
0.4
IC
= 20 mA, I
B
= 2 mA
SMBTA 42
SMBTA 43
Base-emitter saturation voltage1)
= 20 mA, I = 2 mA
–
–
0.9
IC
B
AC characteristics
Transition frequency
f
T
50
–
–
MHz
pF
IC
= 10 mA, VCE = 20 V, f = 100 MHz
Output capacitance
C
obo
VCB = 20 V, f = 1 MHz
SMBTA 42
SMBTA 43
–
–
–
–
3
4
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
SMBTA 42
SMBTA 43
Total power dissipation Ptot = f (T
A
*; TS
)
Transition frequency f
T
= f (I )
C
* Package mounted on epoxy
V
CE = 10 V, f = 100 MHz
Permissible pulse load Ptot max/Ptot DC = f (t
p
)
Operating range I = f (VCE0)
C
TA = 25 ˚C, D = 0
Semiconductor Group
3
SMBTA 42
SMBTA 43
Collector cutoff current ICB0 = f (T
A
)
Collector current I = f (VBE)
C
V
CB = 160 V
VCE = 10 V
DC current gain hFE = f (I )
C
V
CE = 10 V
Semiconductor Group
4
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