Q68000-A8440 [INFINEON]
Silicon Switching Diode Array; 硅开关二极管阵列型号: | Q68000-A8440 |
厂家: | Infineon |
描述: | Silicon Switching Diode Array |
文件: | 总4页 (文件大小:103K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Silicon Switching Diode Array
SMBD 7000
● For high-speed switching applications
● Connected in series
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
SMBD 7000
s5C
Q68000-A8440
SOT-23
Maximum Ratings
Parameter
Symbol
Values
100
Unit
Reverse voltage
V
R
V
Peak reverse voltage
Forward current
V
RM
100
IF
200
mA
A
Surge forward current, t = 1 µs
IFS
4.5
Total power dissipation, T
S
= 31 ˚C
P
tot
330
mW
˚C
Junction temperature
T
j
150
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 500
≤ 360
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
SMBD 7000
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Breakdown voltage
Forward voltage
V
(BR)
F
100
–
–
V
V
mV
IF
IF
IF
= 1 mA
= 10 mA
= 100 mA
550
670
750
–
–
–
700
820
1100
Reverse current
IR
VR
VR
VR
= 50 V
= 100 V
= 50 V, T
–
–
–
–
–
–
300
500
100
nA
nA
µA
A
= 125 ˚C
AC characteristics
Diode capacitance
C
D
–
–
–
–
2
pF
ns
V
R
= 0, f = 1 MHz
Reverse recovery time
= 10 mA, I = 10 mA, R = 100 Ω
t
rr
15
IF
R
L
Test circuit for reverse recovery time
Pulse generator: t
p
r
= 100 ns, D = 0.05
= 0.6 ns, R = 50 Ω
Oscillograph: R = 50 Ω
= 0.35 ns
C ≤ 1 pF
t
j
t
r
Semiconductor Group
2
SMBD 7000
Forward current I
F
= f (T
A
*; TS
)
Reverse current I
R
= f (T )
A
* Package mounted on epoxy
Forward current I
= 25 ˚C
F
= f (V
F
)
Peak forward current IFM = f (t)
= 25 ˚C
T
A
TA
Semiconductor Group
3
SMBD 7000
Forward voltage V
F
= f (T )
A
Semiconductor Group
4
相关型号:
Q68000-A8615
GaAs MMIC (Two stages monolithic microwave IC MMICAmplifier All gold metallisation)
INFINEON
©2020 ICPDF网 联系我们和版权申明