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SIGC04T60GE [INFINEON]

Insulated Gate Bipolar Transistor,;

SIGC04T60GE


元器件型号：	SIGC04T60GE
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Insulated Gate Bipolar Transistor, 栅功率控制晶体管
PDF文件：	总6页 (文件大小：56K)
下载文档：	下载PDF数据表文档文件
型号参数：SIGC04T60GE参数

SIGC04T60GS

IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient

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19 INFINEON

SIGC04T60GSE

Insulated Gate Bipolar Transistor,

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0 INFINEON

SIGC04T65E

Insulated Gate Bipolar Transistor

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0 INFINEON

SIGC05T60SNC

IGBT Chip in NPT-technology

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9 INFINEON

SIGC06T120CS

IGBT Chip in NPT-technology

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7 INFINEON

SIGC06T120CSX1SA2

Insulated Gate Bipolar Transistor, 2A I(C), 1200V V(BR)CES, N-Channel, DIE-2

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0 INFINEON

SIGC06T60

IGBT3 Chip

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10 INFINEON

SIGC06T60E

Insulated Gate Bipolar Transistor,

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0 INFINEON

SIGC06T60G

IGBT3 Chip

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7 INFINEON

SIGC06T60G

IGBT3 Chip

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8 INFINEON

SIGC06T60G_05

IGBT3 Chip

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4 INFINEON

SIGC06T60GE

Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel,

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0 INFINEON

SIGC06T60GS

IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient

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6 INFINEON

SIGC06T60GSE

Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel,

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0 INFINEON

SIGC06T60GSX1SA2

Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 2.44 X 2.42 MM, DIE-2

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0 INFINEON

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