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元器件品牌
SIGC101T170R3
[INFINEON]
IGBT3 Chip; IGBT3芯片
元器件型号:
SIGC101T170R3
生产厂家:
INFINEON TECHNOLOGIES AG
描述和应用:
IGBT3 Chip
IGBT3芯片
双极性晶体管
PDF文件:
总4页 (文件大小:72K)
下载文档:
下载PDF数据表文档文件
型号参数:SIGC101T170R3参数
查看货源
SIGC101T170R3E
Insulated Gate Bipolar Transistor
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156
-
0
INFINEON
SIGC104T170R2C
IGBT Chip in NPT-technology
Warning
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156
-
14
INFINEON
SIGC109T120R3
IGBT3 Chip
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on line
156
-
7
INFINEON
SIGC109T120R3E
Insulated Gate Bipolar Transistor
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: Undefined variable $rtag in
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156
-
0
INFINEON
SIGC109T120R3EX1SA6
Insulated Gate Bipolar Transistor,
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: Undefined variable $rtag in
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156
-
0
INFINEON
SIGC109T120R3L
IGBT3 Chip
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156
-
9
INFINEON
SIGC109T120R3LE
Insulated Gate Bipolar Transistor
Warning
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156
-
0
INFINEON
SIGC109T120R3LEX1SA2
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
Warning
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156
-
0
INFINEON
SIGC109T120R3LEX1SA5
Insulated Gate Bipolar Transistor,
Warning
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156
-
0
INFINEON
SIGC10T60
IGBT3 Chip
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156
-
15
INFINEON
SIGC10T60E
暂无描述
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156
-
0
INFINEON
SIGC10T60S
IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient
Warning
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on line
156
-
8
INFINEON
SIGC10T60SE
Insulated Gate Bipolar Transistor,
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156
-
0
INFINEON
SIGC10T60SX1SA2
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, 3.19 X 3.21 MM, DIE-2
Warning
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156
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0
INFINEON
SIGC10T60X1SA1
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, 3.19 X 3.21 MM, DIE-2
Warning
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156
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0
INFINEON
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