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SIGC10T60 [INFINEON]

IGBT3 Chip; IGBT3芯片
SIGC10T60
型号: SIGC10T60
厂家: Infineon    Infineon
描述:

IGBT3 Chip
IGBT3芯片

双极性晶体管
文件: 总4页 (文件大小:76K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

SIGC10T60E

暂无描述

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INFINEON

SIGC10T60S

IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient

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SIGC10T60SE

Insulated Gate Bipolar Transistor,

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SIGC10T60SX1SA2

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, 3.19 X 3.21 MM, DIE-2

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SIGC10T60X1SA1

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, 3.19 X 3.21 MM, DIE-2

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SIGC11T60NC

IGBT Chip in NPT-technology

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SIGC11T60SNC

IGBT Chip in NPT-technology

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SIGC121T120R2C

IGBT Chip in NPT-technology

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SIGC121T120R2CL

IGBT Chip in NPT-technology

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SIGC121T120R2CS

IGBT Chip in NPT-technology

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SIGC121T120R2CSX1SA6

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, DIE

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SIGC121T120R2CX1SA3

Insulated Gate Bipolar Transistor, 103A I(C), 1200V V(BR)CES, N-Channel, 11.08 X 11.08 MM, DIE-10

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SIGC121T120R2CX1SA5

Insulated Gate Bipolar Transistor, 103A I(C), 1200V V(BR)CES, N-Channel, 11.08 X 11.08 MM, DIE-10

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IGBT Chip in NPT-technology

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SIGC128T170R3

IGBT3 Chip

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Insulated Gate Bipolar Transistor

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Insulated Gate Bipolar Transistor,

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IGBT Chip

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SIGC12T120E

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SIGC12T120L

IGBT3 Chip

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