SKB02N60ATMA1 [INFINEON]
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3;型号: | SKB02N60ATMA1 |
厂家: | Infineon |
描述: | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 栅 瞄准线 功率控制 晶体管 |
文件: | 总13页 (文件大小:601K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SKB02N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
C
75% lower Eoff compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10 s
Designed for frequency inverters for washing machines,
G
E
fans, pumps and vacuum cleaners
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
PG-TO-263-3-2
Very soft, fast recovery anti-parallel Emitter Controlled
Diode
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
VCE(sat)
Tj
Marking
Package
SKB02N60
600V
2A
2.2V
K06N60 PG-TO-263-3-2
150C
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
TC = 25C
VC E
IC
600
V
A
6.0
2.9
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150C
ICp ul s
-
12
12
Diode forward current
IF
6.0
2.9
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
IFp ul s
VG E
tSC
12
20
10
Gate-emitter voltage
V
Short circuit withstand time2
VGE = 15V, VCC 600V, Tj 150C
Power dissipation
s
Pt ot
30
W
TC = 25C
Operating junction and storage temperature
Soldering temperature (reflow soldering, MSL1)
Tj , Tstg
-55...+150
260
C
Ts
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3 12.06.2013
SKB02N60
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Rt hJC
Rt hJC D
Rt hJA
4.2
7
K/W
Diode thermal resistance,
junction – case
SMD version, device on PCB1)
40
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static Characteristic
Collector-emitter breakdown voltage V( BR )C ES
600
-
-
V
VG E =0V, IC =500A
Collector-emitter saturation voltage
VC E( sat ) VG E = 15V, IC =2A
Tj =25C
1.7
-
1.9
2.2
2.4
2.7
Tj =150C
Diode forward voltage
VF
VG E =0V, IF =2.9A
Tj =25C
1.2
-
1.4
1.8
1.25
1.65
Tj =150C
Gate-emitter threshold voltage
VG E( t h)
ICE S
3
4
5
IC =150A,VC E =VGE
VC E =600V,VGE =0V
Tj =25C
Zero gate voltage collector current
A
-
-
-
-
20
250
Tj =150C
Gate-emitter leakage current
Transconductance
IGE S
gfs
VC E =0V,VG E =20V
VC E =20V, IC =2A
-
-
-
100
-
nA
S
1.6
Dynamic Characteristic
Input capacitance
Ci ss
VC E =25V,
VG E =0V,
f=1MHz
-
-
-
-
142
18
170
22
pF
Output capacitance
Cos s
Crs s
Reverse transfer capacitance
Gate charge
10
12
QGat e
VC C =480V, IC =2A
VG E =15V
14
18
nC
nH
A
Internal emitter inductance
LE
-
-
7
-
-
measured 5mm (0.197 in.) from case
Short circuit collector current2)
IC( SC )
20
VG E =15V,tSC10s
VC C 600V,
Tj 150C
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.3 12.06.2013
SKB02N60
Switching Characteristic, Inductive Load, at Tj=25 C
Value
Unit
Parameter
Symbol
Conditions
min.
typ.
max.
IGBT Characteristic
Turn-on delay time
Rise time
td( o n)
tr
td( of f)
tf
-
-
-
-
-
-
-
20
13
24
16
ns
Tj =25C,
VC C =400V,IC =2A,
VG E =0/15V,
Turn-off delay time
Fall time
259
311
62
RG =118,
1 )
L =180nH,
52
1)
C =180pF
Turn-on energy
Eo n
Eo ff
Et s
0.036
0.028
0.064
0.041 mJ
0.036
Energy losses include
“tail” and diode
reverse recovery.
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
0.078
trr
tS
-
-
-
-
-
-
130
12
-
-
-
-
-
-
ns
Tj =25C,
VR =200V, IF =2.9A,
diF/dt=200A/s
tF
118
65
Diode reverse recovery charge
Qrr
nC
A
Diode peak reverse recovery current Irr m
1.9
180
Diode peak rate of fall of reverse
recovery current during tb
dirr /dt
A/s
Switching Characteristic, Inductive Load, at Tj=150 C
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
IGBT Characteristic
Turn-on delay time
Rise time
Tj =150C
VC C =400V,
IC =2A,
td( o n)
tr
td( of f)
tf
-
-
-
-
-
-
-
20
14
24
17
ns
Turn-off delay time
Fall time
287
344
80
VG E =0/15V,
RG =118,
67
1 )
L =180nH,
Turn-on energy
Turn-off energy
Total switching energy
Eo n
Eo ff
Et s
0.054
0.043
0.097
0.062 mJ
0.056
1)
C =180pF
Energy losses include
“tail” and diode
reverse recovery.
0.118
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
tS
-
-
-
-
-
-
150
19
-
-
-
-
-
-
ns
Tj =150C
VR =200V, IF =2.9A,
diF/dt=200A/s
tF
131
150
3.8
200
Diode reverse recovery charge
Qrr
nC
A
Diode peak reverse recovery current Irr m
Diode peak rate of fall of reverse
recovery current during tb
dirr /dt
A/s
1) Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E.
Rev. 2.3 12.06.2013
3
SKB02N60
16A
14A
12A
10A
8A
Ic
tp=2s
10A
1A
15s
50s
200s
TC=80°C
6A
0.1A
0.01A
TC=110°C
1ms
DC
4A
Ic
2A
0A
10Hz
1V
10V
100V
1000V
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 150C)
(Tj 150C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 118)
35W
30W
25W
20W
15W
10W
5W
7A
6A
5A
4A
3A
2A
1A
0A
0W
25°C
25°C
50°C
75°C 100°C 125°C
50°C
75°C 100°C 125°C
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation (IGBT) as a
function of case temperature
(Tj 150C)
Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 150C)
4
Rev. 2.3 12.06.2013
SKB02N60
7A
6A
5A
4A
3A
2A
1A
0A
7A
6A
5A
4A
3A
2A
1A
0A
VGE=20V
15V
13V
11V
9V
VGE=20V
15V
13V
11V
9V
7V
7V
5V
5V
0V
1V
2V
3V
4V
5V
0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
Figure 6. Typical output characteristics
(Tj = 25C)
(Tj = 150C)
8A
4.0V
Tj=+25°C
7A
6A
5A
4A
3A
2A
1A
0A
3.5V
-55°C
+150°C
IC = 4A
3.0V
2.5V
IC = 2A
2.0V
1.5V
1.0V
0V
2V
4V
6V
8V
10V
-50°C
0°C
50°C 100°C 150°C
VGE, GATE-EMITTER VOLTAGE
Tj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
Figure 8. Typical collector-emitter
(VCE = 10V)
saturation voltage as a function of junction
temperature
(VGE = 15V)
5
Rev. 2.3 12.06.2013
SKB02N60
td(off)
td(off)
tf
tf
100ns
100ns
td(on)
td(on)
tr
tr
10ns
0A
10ns
0
100
200
300
400
1A
2A
3A
4A
5A
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150C, VCE = 400V,
VGE = 0/+15V, RG = 118,
Dynamic test circuit in Figure E)
(inductive load, Tj = 150C, VCE = 400V,
VGE = 0/+15V, IC = 2A,
Dynamic test circuit in Figure E)
5.5V
5.0V
4.5V
4.0V
td(off)
100ns
max.
tf
3.5V
3.0V
2.5V
2.0V
td(on)
typ.
min.
tr
10ns
0°C
50°C
100°C
150°C
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 2A, RG = 118,
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.15mA)
Dynamic test circuit in Figure E)
6
Rev. 2.3 12.06.2013
SKB02N60
0.2mJ
*) Eon and Ets include losses
*) Eon and Ets include losses
due to diode recovery.
due to diode recovery.
0.2mJ
0.1mJ
0.0mJ
Ets*
Ets*
0.1mJ
Eon
*
Eon
*
Eoff
Eoff
0.0mJ
0
100
200
300
400
0A
1A
2A
3A
4A
5A
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150C, VCE = 400V,
VGE = 0/+15V, RG = 118,
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150C, VCE = 400V,
VGE = 0/+15V, IC = 2A,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
0.2mJ
*) Eon and Ets include losses
due to diode recovery.
D=0.5
0.2
100K/W
Ets*
0.1
0.05
Eon
*
0.1mJ
0.02
R , ( K / W )
1.026
1.3
1.69
0.183
, ( s )
10-1K/W
0.035
3.62*10-3
4.02*10-4
4.21*10-5
0.01
Eoff
R1
R2
10-2K/W
single pulse
C1=1/R1 C2=2/R2
0.0mJ
0°C
50°C
100°C
150°C
1µs
10µs 100µs 1ms 10ms 100ms 1s
tp, PULSE WIDTH
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 2A, RG = 118,
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
Dynamic test circuit in Figure E)
7
Rev. 2.3 12.06.2013
SKB02N60
25V
20V
15V
10V
5V
Ciss
100pF
120V
480V
Coss
10pF
Crss
0V
0nC
5nC
10nC
15nC
0V
10V
20V
30V
QGE, GATE CHARGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC = 2A)
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
25s
40A
30A
20A
10A
0A
20s
15s
10s
5s
0s
10V
11V
12V
13V
14V
15V
10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 600V, start at Tj = 25C)
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(VCE 600V,Tj = 150C)
8
Rev. 2.3 12.06.2013
SKB02N60
500ns
400ns
300ns
200ns
100ns
0ns
280nC
240nC
200nC
160nC
120nC
80nC
IF = 4A
IF = 4A
IF = 2A
IF = 1A
IF = 2A
IF = 1A
40nC
0nC
20A/s 60A/s 100A/s 140A/s 180A/s
20A/s 60A/s 100A/s 140A/s 180A/s
diF/dt, DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(VR = 200V, Tj = 125C,
diF/dt, DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(VR = 200V, Tj = 125C,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
250A/s
200A/s
150A/s
100A/s
50A/s
0A/s
5A
4A
IF = 4A
3A
IF = 2A
IF = 1A
2A
1A
0A
20A/s
60A/s
100A/s 140A/s 180A/s
20A/s
60A/s
100A/s
140A/s
180A/s
diF/dt, DIODE CURRENT SLOPE
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(VR = 200V, Tj = 125C,
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR = 200V, Tj = 125C,
Dynamic test circuit in Figure E)
Dynamic test circuit in Figure E)
9
Rev. 2.3 12.06.2013
SKB02N60
4A
3A
2A
1A
2.5V
2.0V
1.5V
1.0V
IF = 4A
IF = 2A
150°C
100°C
25°C
-55°C
0A
0.0V
0.5V
1.0V
1.5V
2.0V
-40°C 0°C
40°C 80°C 120°C
VF, FORWARD VOLTAGE
Tj, JUNCTION TEMPERATURE
Figure 25. Typical diode forward current as
a function of forward voltage
Figure 26. Typical diode forward voltage as
a function of junction temperature
101K/W
D=0.5
0.2
100K/W
0.1
0.05
R , ( K / W )
0.830
2.240
, ( s )
6.40*10-3
8.79*10-4
1.19*10-4
0.02
0.01
3.930
10-1K/W
R1
R2
single pulse
C1=1/R1 C2=2/R2
10-2K/W
1µs
10µs 100µs 1ms 10ms 100ms
1s
tp, PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = tp / T)
10
Rev. 2.3 12.06.2013
SKB02N60
PG-TO263-3-2
11
Rev. 2.3 12.06.2013
SKB02N60
i,v
t
=t +t
S F
di /dt
r r
F
Q
=Q +Q
r r
S
F
t
r r
I
t
t
F
S
F
t
Q
10% I
r r m
Q
S
F
I
r r m
di /dt
V
r r
r r m
R
90% I
Figure C. Definition of diodes
switching characteristics
1
2
n
r1
r 2
r n
T (t)
j
p(t)
r 2
r1
rn
Figure A. Definition of switching times
T
C
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L =180nH
and Stray capacity C =180pF.
Figure B. Definition of switching losses
12
Rev. 2.3 12.06.2013
SKB02N60
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.
13
Rev. 2.3 12.06.2013
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