SMBT3904 [INFINEON]
NPN Silicon Switching Transistor; 硅NPN开关晶体管
| 型号： | SMBT3904 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon Switching Transistor |
| 文件： | 总7页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon Switching Transistor
SMBT 3904
● High DC current gain: 0.1 mA to 100 mA
● Low collector-emitter saturation voltage
● Complementary type: SMBT 3906 (PNP)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
SMBT 3904
s1A
Q68000-A4416
B
E
C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
40
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
CE0
CB0
EB0
V
V
V
60
6
IC
200
330
150
mA
mW
˚C
P
tot
Total power dissipation, T
S
= 69 ˚C
Junction temperature
Tj
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 315
≤ 245
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
SMBT 3904
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V
V
V
(BR)CE0
(BR)CB0
(BR)EB0
40
60
6
–
–
–
–
–
V
I
C
= 1 mA
Collector-base breakdown voltage
= 10 µA
Emitter-base breakdown voltage
= 10 µA
Collector-base cutoff current
–
IC
–
IE
ICB0
–
50
nA
–
VCB = 30 V
DC current gain
h
FE
IC
IC
IC
IC
IC
= 100 µA, VCE = 1 V
1 mA, VCE = 1 V
= 10 mA, VCE = 1 V1)
= 50 mA, VCE = 1 V1)
= 100 mA, VCE = 1 V1)
40
70
100
60
30
–
–
–
–
–
–
–
300
–
–
=
Collector-emitter saturation voltage1)
V
V
CEsat
BEsat
V
I
C
= 10 mA, I
B
= 1 mA
= 5 mA
–
–
–
–
0.2
0.3
IC
= 50 mA, I
B
Base-emitter saturation voltage1)
I
C
= 10 mA, I
B
= 1 mA
= 5 mA
0.65
–
–
–
0.85
0.95
IC
= 50 mA, I
B
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
SMBT 3904
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC characteristics
Transition frequency
f
T
300
–
–
–
–
–
–
–
–
–
–
MHz
pF
IC
= 10 mA, VCE = 20 V, f = 100 MHz
Output capacitance
CB = 5 V, f= 1 MHz
Input capacitance
EB = 0.5 V, f= 1 MHz
Input impedance
= 1 mA, VCE = 10 V, f= 1 kHz
Open-circuit reverse voltage transfer ratio
= 1 mA, VCE = 10 V, f= 1 kHz
Short-circuit forward current transfer ratio
= 1 mA, VCE = 10 V, f= 1 kHz
Open-circuit output admittance
= 1 mA, VCE = 10 V, f= 1 kHz
Noise figure
= 100 µA, VCE = 5 V, R
C
obo
ibo
4
V
C
–
8
V
h
h
h
h
11e
12e
21e
22e
1
10
8
kΩ
10– 4
–
IC
0.5
100
1
IC
400
40
5
IC
µS
dB
IC
F
–
IC
S
= 1 kΩ, f = 1 kHz
V
CC = 3 V, I
C
= 10 mA, IB1 = 1 mA
V
BE(off) = 0.5 V
Delay time
Rise time
t
t
d
r
–
–
–
–
35
35
ns
ns
V
CC = 3 V, I
C
= 10 mA, IB1 = IB2 = 1 mA
Storage time
Fall time
t
t
stg
f
–
–
–
–
200
50
ns
ns
(see diagrams)
Semiconductor Group
3
SMBT 3904
Test circuits
Delay and rise time
Storage and fall time
Semiconductor Group
4
SMBT 3904
Total power dissipation Ptot = f (T
A
*; TS
)
Saturation voltage I = f (VBE sat, VCE sat)
C
* Package mounted on epoxy
Permissible pulse load Ptot max / Ptot DC = f (t
p)
DC current gain hFE = f (I
C
)
VCE = 10 V, normalized
Semiconductor Group
5
SMBT 3904
Short-circuit forward current
transfer ratio h21e = f (I
CE = 10 V, f = 1 MHz
Open-circuit output admittance
C)
h
22e = f (I )
C
V
VCE = 10 V, f = 1 MHz
Delay time t
d
= f (I
C)
Storage time tstg = f (I )
C
Rise time t = f (I )
r
C
Semiconductor Group
6
SMBT 3904
Fall time t
f
= f (I
C
)
Rise time t
r
= f (I )
C
Input impedance
Open-circuit reverse voltage
transfer ratio h12e = f (I
VCE = 10 V, f = 1 kHz
h
11e = f (I
C)
C)
V
CE = 10 V, f = 1 kHz
Semiconductor Group
7
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