SMBT5086 [INFINEON]
PNP Silicon Transistors; PNP硅晶体管
| 型号： | SMBT5086 |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon Transistors |
| 文件： | 总6页 (文件大小：256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Silicon Transistors
SMBT 5086
SMBT 5087
● For AF input stages and driver applications
● High current gain
● Low collector-emitter saturation voltage
● Low noise between 30 Hz and 15 kHz
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
SMBT 5086
SMBT 5087
s2P
s2Q
Q62702-M0002
Q68000-A8319
B
E
C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
50
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
VCE0
V
VCB0
50
VEB0
3
IC
50
mA
mW
˚C
Total power dissipation, T
S
= 71 ˚C
P
tot
330
150
Junction temperature
Tj
Storage temperature range
T
stg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 310
≤ 240
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
SMBT 5086
SMBT 5087
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V(BR)CB0
V(BR)EB0
50
50
3
–
–
–
–
–
–
V
I
C
= 1 mA
Collector-base breakdown voltage
= 100 µA
IC
Emitter-base breakdown voltage, I
E
= 10 µA
Collector-base cutoff current
ICB0
V
V
V
CB = 10 V, I
CB = 35 V, I
CB = 35 V, I
E
E
E
= 0
= 0
–
–
–
–
–
–
10
50
20
nA
nA
µA
= 0, T = 150 ˚C
A
DC current gain
h
FE
–
IC
IC
IC
= 100 µA, VCE = 5 V
= 1 mA, VCE = 5 V
= 10 mA, VCE = 5 V
SMBT 5086
SMBT 5087
SMBT 5086
SMBT 5087
SMBT 5086
SMBT 5087
150
250
150
250
150
250
–
–
–
–
–
–
500
800
–
–
–
–
Collector-emitter saturation voltage1)
= 10 mA, I = 1 mA
V
V
CEsat
BEsat
–
–
0.3
V
IC
B
Base-emitter saturation voltage1)
= 10 mA, I = 1 mA
–
–
0.85
IC
B
AC characteristics
Transition frequency
IC = 0.5 mA, VCE = 5 V, f = 100 MHz
f
T
40
–
–
–
–
4
MHz
Output capacitance, VCB = 5 V, f = 1 MHz
C
obo
pF
–
Small-signal current gain
h
fe
I
C
= 1 mA, VCE = 5 V, f = 1 kHz
= 1 mA, VCE = 5 V, f = 1 kHz
SMBT 5086
SMBT 5087
150
250
–
–
600
900
IC
Noise figure
NF
I
R
C
= 100 µA, VCE = 5 V, f = 1 kHz,
= 3 kΩ
S
SMBT 5086
SMBT 5087
–
–
–
–
3
2
dB
dB
I
R
C
= 2 mA, VCE = 5 V, f = 10 Hz to 15 kHz,
= 10 kΩ SMBT 5086
SMBT 5087
S
–
–
–
–
3
2
dB
dB
1)
Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
SMBT 5086
SMBT 5087
Total power dissipation Ptot = f (T
* Package mounted on epoxy
A
*; TS
)
Collector-base capacitance CCB0 = f (VCB0
Emitter-base capacitance CEB0 = f (VEB0
)
)
Permissible pulse load Ptot max/Ptot DC = f (t
p
)
Transition frequency f
T
= f (I )
C
V
CE = 5 V
Semiconductor Group
3
SMBT 5086
SMBT 5087
Base-emitter saturation voltage
Collector-emitter saturation voltage
IC
= f (VBE sat), hFE = 40
IC = f (VCE sat), hFE = 40
Collector current I
C
= f (VBE
)
DC current gain hFE = f (I )
C
V
CE = 1 V
VCE = 1 V
Semiconductor Group
4
SMBT 5086
SMBT 5087
Collector cutoff current ICB0 = f (T
A
)
Noise figure NF = f (VCE
)
IC
= 0.2 mA, R = 2 kΩ, f = 1 kHz
S
Noise figure NF = f (I
C)
Noise figure NF = f (I
C)
IC
= 0.2 mA, R = 2 kΩ,VCE = 5 V
S
V
CE = 5 V, f = 120 kHz
Semiconductor Group
5
SMBT 5086
SMBT 5087
Noise figure NF = f (I
C)
Noise figure NF = f (I
C)
V
CE = 5 V, f = 1 kHz
VCE = 5 V, f = 10 kHz
Semiconductor Group
6
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INFINEON
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