SMBTA06UPNE6327HT [INFINEON]

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SC-74, 6 PIN;
SMBTA06UPNE6327HT
型号: SMBTA06UPNE6327HT
厂家: Infineon    Infineon
描述:

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SC-74, 6 PIN

文件: 总7页 (文件大小:77K)
中文:  中文翻译
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SMBTA06UPN  
NPN / PNP Silicon AF Transistor Array  
High breakdown voltage  
4
3
Low collector-emitter saturation voltage  
Two (galvanic) internal isolated NPN/PNP  
Transistor in one package  
5
2
1
6
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
C1  
6
B2  
E2  
4
5
Tape loading orientation  
TR2  
Marking on SC74 package  
TR1  
Top View  
(for example W1s)  
corresponds to pin 1 of device  
6
5 4  
1
2
3
W1s  
E1  
B1  
C2  
EHA07177  
Position in tape: pin 1  
opposite of feed hole side  
1
2
3
Direction of Unreeling  
SC74_Tape  
Type  
SMBTA06UPN  
Marking  
Pin Configuration  
Package  
s2P  
1=E 2=B 3=C 4=E 5=B 6=C SC74  
Maximum Ratings  
Parameter  
Symbol  
Value  
80  
Unit  
V
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
CEO  
CBO  
EBO  
80  
4
500  
1
mA  
A
I
C
Peak collector current  
Base current  
I
CM  
100  
200  
330  
mA  
I
B
Peak base current  
Total power dissipation-  
I
BM  
mW  
°C  
P
tot  
T 115 °C  
S
150  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
1Pb-containing package may be available upon special request  
1
2007-04-27  
SMBTA06UPN  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
1)  
K/W  
Junction - soldering point  
R
105  
thJS  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC Characteristics  
80  
-
-
-
-
-
-
V
Collector-emitter breakdown voltage  
V
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
CBO  
I = 1 mA, I = 0  
C
B
Collector-base breakdown voltage  
I = 100 µA, I = 0  
80  
4
C
E
Emitter-base breakdown voltage  
I = 10 µA, I = 0  
E
C
Collector-base cutoff current  
I
I
µA  
V
V
= 80 V, I = 0  
-
-
-
-
0.1  
20  
CB  
CB  
E
= 80 V, I = 0 , T = 150 °C  
E
A
Collector-emitter cutoff current  
-
-
100 nA  
CEO  
V
= 60 V, I = 0  
CE  
B
2)  
-
DC current gain  
h
FE  
I = 10 mA, V = 1 V  
100  
100  
-
-
-
-
C
CE  
I = 100 mA, V = 1 V  
C
CE  
2)  
Collector-emitter saturation voltage  
I = 100 mA, I = 10 mA  
V
V
-
-
0.25 V  
CEsat  
C
B
2)  
Base-emitter voltage  
I = 100 mA, V = 1 V  
-
-
1.2  
BE(ON)  
C
CE  
AC Characteristics  
-
-
100  
7
-
-
MHz  
Transition frequency  
f
T
I = 20 mA, V = 5 V, f = 20 MHz  
C
CE  
pF  
Collector-base capacitance  
= 10 V, f = 1 MHz  
C
cb  
V
CB  
1For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
2Pulse test: t < 300µs; D < 2%  
2
2007-04-27  
SMBTA06UPN  
DC current gain h = ƒ(I )  
Collector-emitter saturation voltage  
FE  
C
V
= 1 V  
I = ƒ(V  
), h = 10  
CE  
C
CEsat  
FE  
EHP00821  
EHP00819  
103  
103  
h FE  
Ι C mA  
100 C  
25 C  
-50 C  
100 C  
25 C  
102  
5
102  
101  
100  
-50 C  
101  
5
100  
10 -1  
10 0  
10 1  
10 2  
Ι C  
10 3  
mA  
0.0 0.1 0.2 0.3 0.4 0.5 0.6  
V
0.8  
VCEsat  
Base-emitter saturation voltage  
Collector current I = ƒ(V )  
C BE  
I = ƒ(V  
), h = 10  
V = 1V  
CE  
C
BEsat  
FE  
EHP00818  
103  
mA  
EHP00815  
103  
mA  
100 ˚C  
25 ˚C  
-50 ˚C  
ΙC  
100 C  
25 C  
-50 C  
Ι C  
102  
5
102  
5
101  
5
101  
5
100  
5
100  
5
10-1  
10-1  
0
0.5  
1.0  
V
1.5  
0
0.5  
1.0  
V
1.5  
VBE  
VBEsat  
3
2007-04-27  
SMBTA06UPN  
Collector cutoff current I  
= ƒ(T )  
Transition frequency f = ƒ(I )  
T C  
CBO  
A
V
= 80 V  
V
= parameter in V, f = 2 GHz  
CE  
CBO  
EHP00817  
103  
MHz  
EHP00820  
104  
nA  
fT  
Ι CBO  
5
max  
103  
5
102  
5
102  
typ  
101  
5
5
100  
5
101  
10-1  
100  
5 101  
5 102  
mA 103  
0
50  
100  
C 150  
TA  
Ι C  
Collector-base capacitance C = ƒ(V )  
Total power dissipation P = ƒ(T )  
tot S  
cb  
CB  
Emitter-base capacitance C = ƒ(V )  
eb  
EB  
65  
pF  
400  
mW  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
300  
250  
200  
150  
100  
50  
CEB  
CCB  
22  
0
0
V
°C  
0
4
8
12  
16  
0
20  
40  
60  
80  
100 120  
150  
V
(V  
)
T
S
CB EB  
4
2007-04-27  
SMBTA06UPN  
Permissible Pulse Load R  
= ƒ(t )  
Permissible Pulse Load  
thJS  
p
P
/P  
= ƒ(t )  
totmax totDC  
p
10 3  
K/W  
10 3  
10 2  
10 1  
10 0  
D=0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
0.2  
0.5  
10 1  
D=0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.005  
0
10 0  
10 -1  
10 -6  
10 -5  
10 -4  
10
-2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
5
2007-04-27  
Package SC74  
SMBTA06UPN  
Package Outline  
±0.2  
2.9  
B
1.1 MAX.  
(2.25)  
+0.1  
-0.06  
0.15  
(0.35)  
6
1
5
2
4
3
+0.1  
-0.05  
A
0.35  
0.95  
M
0.2  
B 6x  
Pin 1  
marking  
0.1 MAX.  
M
0.2  
A
1.9  
Foot Print  
0.5  
0.95  
Marking Layout (Example)  
Small variations in positioning of  
Date code, Type code and Manufacture are possible.  
Manufacturer  
2005, June  
Date code (Year/Month)  
Pin 1 marking  
Laser marking  
BCW66H  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
For symmetric types no defined Pin 1 orientation in reel.  
4
0.2  
3.15  
1.15  
Pin 1  
marking  
6
2007-04-27  
SMBTA06UPN  
Edition 2006-02-01  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© Infineon Technologies AG 2007.  
All Rights Reserved.  
Attention please!  
The information given in this dokument shall in no event be regarded as a guarantee  
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any  
examples or hints given herein, any typical values stated herein and/or any information  
regarding the application of the device, Infineon Technologies hereby disclaims any  
and all warranties and liabilities of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices  
please contact your nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances.  
For information on the types in question please contact your nearest  
Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or  
systems with the express written approval of Infineon Technologies, if a failure of  
such components can reasonably be expected to cause the failure of that  
life-support device or system, or to affect the safety or effectiveness of that  
device or system.  
Life support devices or systems are intended to be implanted in the human body,  
or to support and/or maintain and sustain and/or protect human life. If they fail,  
it is reasonable to assume that the health of the user or other persons  
may be endangered.  
7
2007-04-27  

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