SMBTA14E6327 [INFINEON]
Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon;
| 型号： | SMBTA14E6327 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMBTA14/MMBTA14
NPN Silicon Darlington Transistor
• High collector current
2
3
• Low collector-emitter saturation voltage
1
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
Pin Configuration
Package
SMBTA14/MMBTA14
s1N
SOT23
1=B
2=E
3=C
Maximum Ratings
Parameter
Symbol
Value
30
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CES
CBO
EBO
30
10
300
500
100
200
330
mA
I
C
Peak collector current
Base current
I
CM
I
B
Peak base current
Total power dissipation-
I
BM
mW
°C
P
tot
T ≤ 81 °C
S
150
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
Thermal Resistance
Parameter
Symbol
Value
Unit
2)
K/W
Junction - soldering point
R
≤ 210
thJS
1Pb-containing package may be available upon special request
2For calculation of R
please refer to Application Note Thermal Resistance
thJA
2007-04-19
1
SMBTA14/MMBTA14
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-base breakdown voltage
I = 10 µA, I = 0
V
V
V
30
-
-
-
-
-
-
V
(BR)CBO
(BR)CES
(BR)EBO
CBO
C
E
Collector-emitter breakdown voltage
I = 10 µA, V = 0
30
10
C
BE
Emitter-base breakdown voltage
I = 10 µA, I = 0
E
C
Collector-base cutoff current
I
I
µA
V
V
= 30 V, I = 0
-
-
-
-
-
-
0.1
10
CB
CB
E
= 30 V, I = 0 , T = 150 °C
E
A
100 nA
Emitter-base cutoff current
EBO
V
= 10 V, I = 0
EB
C
1)
-
DC current gain
h
FE
I = 10 mA, V = 5 V
10000
20000
-
-
-
-
C
CE
I = 100 mA, V = 5 V
C
CE
1)
Collector-emitter saturation voltage
I = 100 mA, I = 0.1 mA
V
V
-
-
1.5
V
CEsat
BEsat
C
B
1)
Base emitter saturation voltage
I = 100 mA, I = 0.1 mA
-
-
2
C
B
AC Characteristics
125
-
-
-
-
MHz
pF
Transition frequency
f
T
I = 50 mA, V = 5 V, f = 20 MHz
C
CE
3
Collector-base capacitance
= 10 V, f = 100 MHz
C
cb
V
CB
1Pulse test: t < 300µs; D < 2%
2007-04-19
2
SMBTA14/MMBTA14
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
FE
C
V
= 5 V
I = ƒ(V
), h = 1000
CE
C
CEsat FE
SMBTA 13/14
EHP00829
SMBTA 13/14
EHP00826
106
103
mA
5
Ι C
hFE
150 ˚C
25 ˚C
-50 ˚C
125 ˚C
25 ˚C
102
5
105
5
-55 ˚C
104
5
101
5
103
100
10-1
100
101
102 mA 103
0
0.5
1.0
1.5
V
VCEsat
Ι C
Base-emitter saturation voltage
I = ƒ(V ), h = 1000
Collector cutoff current I
= ƒ(T )
CBO A
V
= 30 V
CBO
C
BEsat
FE
SMBTA 13/14
EHP00828
SMBTA 13/14
EHP00827
103
mA
104
nA
Ι C
Ι CB0
max
150 ˚C
25 ˚C
-50 ˚C
103
5
102
5
typ
102
5
101
5
101
5
100
100
0
1.0
2.0
3.0
0
50
100
150
˚C
V
VBEsat
TA
2007-04-19
3
SMBTA14/MMBTA14
Transition frequency f = ƒ(I )
Collector-base capacitance C = ƒ(V )
cb CB
T
C
V
= 5 V, f = 200 MHz
Emitter-base capacitance C = ƒ(V )
eb EB
CE
SMBTA 13/14
EHP00825
103
MHz
19
pF
fT
5
15
13
11
9
102
CEB
5
7
5
CCB
3
101
1
100
5 101
5 102
mA 103
V
0
4
8
12
16
22
V
/V
CB EB
Ι C
Total power dissipation P = ƒ(T )
Permissible Pulse Load
tot
S
P
/P
= ƒ(t )
totmax totDC p
SMBTA 13/14
EHP00824
103
5
360
mW
Ptotmax
PtotDC
t p
t p
T
D
=
300
270
240
210
180
150
120
90
T
102
5
D
0
=
0.005
0.01
0.02
0.05
0.1
0.2
0.5
101
5
60
30
100
0
10-6 10-5 10-4 10-3 10-2
s
100
0
15 30 45 60 75 90 105 120
150
°C
T
S
t p
2007-04-19
4
Package SOT23
SMBTA14/MMBTA14
Package Outline
±0.1
1
0.1 MAX.
±0.1
2.9
B
3
1
2
1)
+0.1
-0.05
0.4
A
0.08...0.15
C
0.95
0...8˚
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2007-04-19
5
SMBTA14/MMBTA14
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-04-19
6
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