SMBTA20 [INFINEON]
NPN Silicon AF Transistor; NPN硅晶体管自动对焦
| 型号： | SMBTA20 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon AF Transistor |
| 文件： | 总4页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon AF Transistor
SMBTA 20
● High DC current gain
● Low collector-emitter saturation voltage
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
SMBTA 20
s1C
Q6800-A6477
B
E
C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
40
Unit
Collector-emitter voltage
Emitter-base voltage
Collector current
V
CE0
V
V
EB0
4
I
I
I
C
100
200
200
330
150
mA
Peak collector current
Peak base current
Total power dissipation, T
Junction temperature
CM
BM
P
tot
mW
˚C
S
= 71 ˚C
Tj
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 310
≤ 240
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
SMBTA 20
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V
(BR)CE0
(BR)EB0
40
4
–
–
–
–
V
IC
= 1 mA
Emitter-base breakdown voltage
= 100 µA
Collector-base cutoff current
V
IE
I
CB0
EB0
VCB = 30 V
–
–
–
–
100
20
nA
µA
V
CB = 30 V, T
A
= 150 ˚C
Emitter-base cutoff current
I
–
–
–
–
20
nA
–
VEB = 4 V
DC current gain
= 5 mA, VCE = 10 V
hFE
40
–
400
0.25
IC
Collector-emitter saturation voltage1)
= 10 mA, I = 1 mA
V
CEsat
V
IC
B
AC characteristics
Transition frequency
f
T
125
–
–
–
–
4
MHz
pF
IC
= 20 mA, VCE = 5 V, f = 100 MHz
Output capacitance
C
obo
VCB = 10 V, f= 1 MHz
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
SMBTA 20
Total power dissipation Ptot = f (T
A
*; TS
)
Collector-base capacitance CCB0 = f (VCB0)
* Package mounted on epoxy
Emitter-base capacitance CEB0 = f (VEB0
)
f= 1 MHz
Permissible pulse load Ptot max/Ptot DC = f (t
p
)
Transition frequency f
T
= f (I )
C
V
CE = 5 V, f = 100 MHz
Semiconductor Group
3
SMBTA 20
Base-emitter saturation voltage
Collector-emitter saturation voltage
IC
= f (VBE sat), hFE = 20
IC = f (VCE sat), hFE = 20
Collector cutoff current ICB0 = f (T
A
)
DC current gain hFE = f (I )
C
V
CB = 30 V
VCE = 1 V
Semiconductor Group
4
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