SMBTA56 [INFINEON]
PNP Silicon AF Transistors; PNP硅晶体管自动对焦
| 型号： | SMBTA56 |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon AF Transistors |
| 文件： | 总4页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Silicon AF Transistors
SMBTA 55
SMBTA 56
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary types: SMBTA 05, SMBTA 06 (NPN)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
SMBTA 55
SMBTA 56
s2H
s2G
Q68000-A3386
Q68000-A2882
B
E
C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
SMBTA 55
SMBTA 56
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CE0
CB0
EB0
60
60
80
80
V
4
I
I
I
I
C
500
1
mA
A
Peak collector current
Base current
CM
B
100
200
330
150
mA
Peak base current
BM
Total power dissipation, TS = 79 ˚C
Junction temperature
Storage temperature range
Ptot
mW
˚C
Tj
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 285
≤ 215
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
SMBTA 55
SMBTA 56
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
IC
= 1 mA
SMBTA 55
SMBTA 56
60
80
–
–
–
–
Collector-base breakdown voltage
IC
= 100 µA
SMBTA 55
SMBTA 56
60
80
–
–
–
–
Emitter-base breakdown voltage
= 10 µA
4
–
–
IE
Collector-base cutoff current
ICB0
V
V
V
V
CB = 60 V
CB = 80 V
CB = 60 V, T
CB = 80 V, T
SMBTA 55
SMBTA 56
SMBTA 55
SMBTA 56
–
–
–
–
–
–
–
–
100
100
20
nA
nA
µA
µA
A
A
= 150 ˚C
= 150 ˚C
20
Collector cutoff current
ICE0
–
–
100
nA
VCE = 60 V
DC current gain1)
hFE
–
100
100
–
130
–
170
I
C
= 10 mA, VCE = 1 V
= 100 mA, VCE = 1 V
IC
Collector-emitter saturation voltage1)
= 100 mA, I = 10 mA
V
CEsat
BE
–
–
–
0.25
1.2
V
IC
B
Base-emitter saturation voltage1)
= 100 mA, VCE = 1 V
V
–
IC
AC characteristics
Transition frequency
f
T
–
–
100
12
–
–
MHz
pF
IC
= 20 mA, VCE = 5 V, f = 20 MHz
Output capacitance
C
obo
VCB = 10 V, f = 1 MHz
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
SMBTA 55
SMBTA 56
Total power dissipation Ptot = f (T
A
*; TS
)
Collector current I
C
= f (VBE
)
* Package mounted on epoxy
VCE = 1 V
Permissible pulse load Ptot max/Ptot DC = f (t
p
)
Transition frequency f
T
= f (I )
C
V
CE = 5 V
Semiconductor Group
3
SMBTA 55
SMBTA 56
Base-emitter saturation voltage
Collector-emitter saturation voltage
IC
= f (VBE sat), hFE = 10
IC = f (VCE sat), hFE = 10
Collector cutoff current ICB0 = f (T
A
)
DC current gain hFE = f (I )
C
V
CB = VCE max
VCE = 1 V
Semiconductor Group
4
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