SP000221220 [INFINEON]

Smart High-Side Power Switch for Industrial Applications; 智能高侧电源开关的工业应用
SP000221220
型号: SP000221220
厂家: Infineon    Infineon
描述:

Smart High-Side Power Switch for Industrial Applications
智能高侧电源开关的工业应用

开关 电源开关
文件: 总13页 (文件大小:238K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
®
PROFET ITS428L2  
Smart High-Side Power Switch  
for Industrial Applications  
One Channel: 60mΩ  
Status Feedback  
Product Summary  
Package  
PG-TO252-5-11  
On-state Resistance  
Operating Voltage  
Nominal load current  
Current limitation  
RON  
60mΩ  
4.75...41V  
7.0A  
17A  
-30 …+85°C  
Vbb(on)  
IL(NOM)  
IL(SCr)  
Ta  
Operating temperature  
General Description  
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and  
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.  
Providing embedded protective functions  
Applications  
µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads in  
industrial applications  
All types of resistive, inductive and capacitve loads  
Most suitable for loads with high inrush currents, so as lamps  
Replaces electromechanical relays, fuses and discrete circuits  
Basic Functions  
Very low standby current  
CMOS compatible input  
Improved electromagnetic compatibility (EMC)  
Fast demagnetization of inductive loads  
Stable behaviour at undervoltage  
Wide operating voltage range  
Logic ground independent from load ground  
Block Diagram  
Protection Functions  
Vbb  
Short circuit protection  
Overload protection  
Current limitation  
Thermal shutdown  
Overvoltage protection (including load dump) with external  
resistor  
Reverse battery protection with external resistor  
Loss of ground and loss of Vbb protection  
Electrostatic discharge protection (ESD)  
IN  
Logic  
with  
protection  
functions  
ST  
OUT  
Load  
Diagnostic Function  
PROFET  
GND  
Diagnostic feedback with open drain output  
Open load detection in ON-state  
Feedback of thermal shutdown in ON-state  
Infineon Technologies AG  
Page 1 of 13  
2006-Mar-16  
®
PROFET ITS428L2  
Functional diagram  
current limit  
overvoltage  
gate  
control  
+
VBB  
protection  
charge  
pump  
internal  
clamp for  
logic  
voltage supply  
inductive load  
OUT  
temperature  
sensor  
IN  
ESD  
LOAD  
Open load  
detection  
ST  
GND  
PROFET  
Pin configuration  
Pin Definitions and Functions  
(top view)  
Symbol  
Function  
Logic ground  
Pin  
Tab = VBB  
GND  
IN  
1
2
Input, activates the power switch in  
case of logical high signal  
Positive power supply voltage  
3
V
bb  
The tab is shorted to pin 3  
1
2
(3)  
4
5
4
ST  
Diagnostic feedback, low on failure  
Output to the load  
GND IN  
ST OUT  
5
OUT  
Positive power supply voltage  
Tab  
V
bb  
The tab is shorted to pin 3  
Infineon Technologies AG  
Page 2  
2006-Mar-16  
®
PROFET ITS428L2  
Maximum Ratings at Tj = 25 °C unless otherwise specified  
Parameter  
Symbol  
Values  
Unit  
V
Supply voltage (overvoltage protection see page 4)  
Supply voltage for full short circuit protection  
Vbb  
Vbb  
43  
24  
V
Tj Start=-40 ...+150°C  
1
3)  
)
Load dump protection VLoadDump = VA + Vs, VA = 13.5 V VLoad dump  
60  
V
RI2)= 2 , RL= 4.0 , td= 200 ms, IN= low or high  
Load current (Current limit, see page 5)  
Junction temperature  
IL  
Tj  
self-limited  
150  
A
°C  
-30 ...+85  
Operating temperature range  
Storage temperature range  
Ta  
Tstg  
Ptot  
-40 ...+105  
Power dissipation (DC), TC 25 °C  
Maximal switchable inductance, single pulse  
75  
W
V
= 12V, T = 150°C, T = 150°C const.  
j,start C  
bb  
4
)
(See diagram on page 9)  
I
= 7 A, R = 0 Ω; E AS=0.19J: ZL  
5.6  
1.0  
4.0  
8.0  
mH  
kV  
L(ISO)  
L
Electrostatic discharge capability (ESD)  
IN:  
VESD  
(Human Body Model)  
ST:  
out to all other pins shorted:  
acc. MIL-STD883D, method 3015.7 and  
ESD assn. std. S5.1-1993; R=1.5k; C=100pF  
Input voltage (DC)  
VIN  
IIN  
IST  
-10 ... +16  
±2.0  
V
mA  
Current through input pin (DC)  
Current through status pin (DC)  
see internal circuit diagrams page 8  
±5.0  
Thermal Characteristics  
Parameter and Conditions  
Symbol  
chip - case: RthJC  
Values  
typ  
Unit  
min  
max  
K/W  
Thermal resistance  
--  
--  
--  
-- 1.67  
--  
75  
--  
R
thJA  
junction - ambient (free ai5r):  
42  
)
device on pcb :  
1
)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω  
resistor for the GND connection is recommended).  
2
3
4
5
)
)
)
)
R = internal resistance of the load dump test pulse generator  
I
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839  
EAS is the maximum inductive switch-off energy  
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V  
connection. PCB is vertical without blown air.  
bb  
Infineon Technologies AG  
Page 3  
2006-Mar-16  
®
PROFET ITS428L2  
Electrical Characteristics  
Parameter and Conditions  
Symbol  
Values  
Unit  
at Tj =-40...+150°C, V = 12 V unless otherwise specified  
bb  
min  
--  
typ  
max  
Load Switching Capabilities and Characteristics  
On-state resistance (pin 3 to 5)  
I = 2 A; VBB 7V  
L
RON  
T=25 °C:  
j
50  
60  
mΩ  
T=150 °C:  
j
100  
120  
see diagram, page 10  
Nominal load current, (pin 3 to 5)  
IL(ISO)  
5.8  
--  
7.0  
--  
--  
2
A
ISO 10483-1, 6.7:VON=0.5V, T =85°C  
C
Output current (pin 5) while GND disconnected or  
IL(GNDhigh)  
mA  
6
)
GND pulled up , V =30 V, V = 0,  
bb  
IN  
see diagram page 8  
Turn-on time  
Turn-off time  
RL = 12 ,  
IN  
IN  
to 90% VOUT: ton  
to 10% VOUT: toff  
30  
30  
100  
100  
200  
200  
µs  
Slew rate on  
dV /dton  
-dV/dtoff  
0.1  
0.1  
--  
--  
1 V/µs  
1 V/µs  
10 to 30% VOUT, RL = 12 ,  
Slew rate off  
70 to 40% VOUT, RL = 12 ,  
Operating Parameters  
Operating voltage  
T =-40 Vbb(on)  
4.75  
--  
--  
41  
V
V
j
T =+25...+150°C:  
43  
j
Overvoltage protection7  
T =-40°C: Vbb(AZ)  
41  
43  
--  
--  
)
j
Ibb=40 mA  
T =25...+150°C:  
47  
52  
j
Standby current (pin 3) 8)  
Tj=-40...+25°C: Ibb(off)  
--  
5
9
µA  
µA  
VIN=0; see diagram on page 10  
Tj= 150°C:  
--  
--  
25  
IL(off)  
IGND  
--  
--  
1
10  
Off-State output current (included in Ibb(off)  
)
VIN=0  
9
)
Operating current , VIN=5 V  
0.8  
1.5  
mA  
6
)
not subject to production test, specified by design  
7
)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω  
resistor for the GND connection is recommended. See also V  
circuit diagram page 8.  
in table of protection functions and  
ON(CL)  
8
9
)
)
Measured with load  
Add I , if I > 0, add I , if V >5.5 V  
ST  
ST  
IN  
IN  
Infineon Technologies AG  
Page 4  
2006-Mar-16  
®
PROFET ITS428L2  
Parameter and Conditions  
Symbol  
Values  
typ max  
Unit  
at Tj =-40...+150°C, V = 12 V unless otherwise specified  
bb  
min  
Protection Functions10  
)
Current limit (pin 3 to 5)  
IL(lim)  
(see timing diagrams on page 12)  
Tj =-40°C:  
Tj =25°C:  
21  
17  
12  
28  
22  
16  
36  
31  
24  
A
Tj =+150°C:  
Repetitive short circuit shutdown current limit  
IL(SCr)  
Tj = Tjt (see timing diagrams, page 12)  
--  
--  
17  
7.5  
--  
--  
A
ms  
Thermal shutdown time11  
T
j,start = 25°C: toff(SC)  
(see timing diagrams on page 12)  
Output clamp (inductive load switch off)  
41  
43  
150  
--  
at VOUT = Vbb - VON(CL)  
IL= 40 mA: VON(CL)  
47  
--  
10  
--  
52  
--  
--  
V
°C  
K
Thermal overload trip temperature  
Thermal hysteresis  
Tjt  
Tjt  
-Vbb  
Reverse battery (pin 3 to 1) 12  
)
--  
32  
V
13  
)
Reverse battery voltage drop (V > V  
)
out  
bb  
IL = -2 A  
T=150 °C: -VON(rev)  
j
--  
600  
-- mV  
Diagnostic Characteristics  
Open load detection current  
IL (OL)  
10  
--  
500 mA  
(on-condition)  
10  
)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the  
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are  
not designed for continuous repetitive operation.  
11  
12  
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V  
)
bb  
connection. PCB is vertical without blown air.  
)
Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source  
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal  
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature  
protection is not active during reverse current operation! Input and Status currents have to be limited (see  
max. ratings page 3 and circuit page 8).  
13  
)
not subject to production test, specified by design  
Infineon Technologies AG  
Page 5  
2006-Mar-16  
®
PROFET ITS428L2  
Parameter and Conditions  
Symbol  
Values  
Unit  
at Tj =-40...+150°C, V = 12 V unless otherwise specified  
bb  
min  
2.5  
typ  
max  
Input and Status Feedback14  
)
Input resistance  
RI  
3.5  
6
kΩ  
see circuit page 8  
Input turn-on threshold voltage  
Input turn-off threshold voltage  
Input threshold hysteresis  
Off state input current (pin 2), VIN = 0.4 V  
On state input current (pin 2), VIN = 5 V  
VIN(T+)  
VIN(T-)  
VIN(T)  
IIN(off)  
1.7  
1.5  
--  
1
20  
100  
--  
--  
0.5  
--  
50  
520  
3.2  
--  
--  
50 µA  
90 µA  
900 µs  
V
V
V
IIN(on)  
Delay time for status with open load after switch off  
td(ST OL4)  
(see timing diagrams on page 12)  
Status output (open drain)  
Zener limit voltage  
ST low voltage  
IST = +1.6 mA: VST(high)  
IST = +1.6 mA: VST(low)  
5.4  
--  
6.1  
--  
--  
V
0.4  
14  
)
If a ground resistor R  
is used, add the voltage drop across this resistor.  
GND  
Infineon Technologies AG  
Page 6  
2006-Mar-16  
®
PROFET ITS428L2  
Truth Table  
Input Output  
Status  
level  
level  
BTS 428L2  
Normal  
L
H
L
L
H
Z
H
L
L
H
H
H
L
H
L
operation  
Open load  
H
L
Overtem-  
perature  
H
L = "Low" Level  
H = "High" Level  
X = don't care  
Z = high impedance, potential depends on external circuit  
Status signal after the time delay shown in the diagrams (see fig 5. page 12)  
Infineon Technologies AG  
Page 7  
2006-Mar-16  
®
PROFET ITS428L2  
Terms  
Overvolt. and reverse batt. protection  
+ 5V  
+ V  
bb  
I
bb  
3
R
ST  
I
V
IN  
Z2  
V
R
bb  
I
IN  
IN  
2
I
L
V
ON  
OUT  
Logic  
PROFET  
I
5
ST  
ST  
ST  
OUT  
R
4
ST  
V
GND  
V
ST  
IN  
V
Z1  
V
1
I
PRO FET  
bb  
V
GND  
OUT  
R
GND  
GND  
R
Load  
R
GND  
Signal GND  
Load GND  
Input circuit (ESD protection)  
V
= 6.1 V typ., V = 47 V typ., R  
= 150 ,  
GND  
Z1  
ST  
Z2  
R
= 15 k, R = 3.5 ktyp.  
I
R
In case of reverse battery the load current has to be  
limited by the load. Temperature protection is not  
active  
I
IN  
ESD-ZDI  
I
I
Open-load detection in on-state  
GND  
Open load, if V < R ·I  
; IN high  
ON L(OL)  
ON  
+ V  
bb  
The use of ESD zener diodes as voltage clamp at DC  
conditions is not recommended  
Status output  
V
ON  
ON  
+5V  
OUT  
RST(ON)  
Open load  
detection  
Logic  
unit  
ST  
ESD-  
ZD  
GND  
ESD-Zener diode: 6.1 V typ., max 5.0 mA; R  
< 375 Ω  
GND disconnect  
ST(ON)  
at 1.6 mA. The use of ESD zener diodes as voltage clamp at  
DC conditions is not recommended.  
3
V
Inductive and overvoltage output clamp  
bb  
IN  
2
+ V  
bb  
OUT  
PROFET  
V
Z
5
ST  
4
GND  
1
VON  
V
V
V
V
bb  
IN  
ST  
GND  
OUT  
PROFET  
GND  
Any kind of load. In case of Input=high is VOUT VIN - VIN(T+)  
Due to VGND >0, no VST = low signal available.  
.
V
ON  
clamped to 47 V typ.  
Infineon Technologies AG  
Page 8  
2006-Mar-16  
®
PROFET ITS428L2  
Inductive Load switch-off energy  
GND disconnect with GND pull up  
dissipation  
E
3
bb  
V
bb  
IN  
E
AS  
2
E
E
Load  
L
OUT  
PROFET  
V
5
bb  
IN  
ST  
4
GND  
1
OUT  
PROFET  
=
ST  
V
V
GND  
L
V
V
IN ST  
GND  
bb  
Z
{
R
L
L
E
R
Any kind of load. If VGND > VIN - VIN(T+) device stays off  
Due to VGND >0, no VST = low signal available.  
V
disconnect with energized inductive  
bb  
Energy stored in load inductance:  
load  
2
1
E = / ·L·I  
L
2
L
3
While demagnetizing load inductance, the energy  
dissipated in PROFET is  
V
high  
bb  
IN  
2
E
AS= Ebb + EL - ER= VON(CL)·iL(t) dt,  
OUT  
PROFET  
5
with an approximate solution for RL > 0:  
ST  
4
IL·L  
IL·RL  
GND  
1
E =  
AS  
·(Vbb +|VOUT(CL)|)· ln (1+  
)
2·RL  
|VOUT(CL)|  
Maximum allowable load inductance for  
V
bb  
a single switch off  
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,  
For inductive load currents up to the limits defined by Z  
(max. ratings and diagram on page 9) each switch is  
L
Vbb = 12 V, RL = 0 Ω  
ZL [mH]  
protected against loss of V  
.
bb  
1000  
Consider at your PCB layout that in the case of Vbb dis-  
connection with energized inductive load all the load current  
flows through the GND connection.  
100  
10  
1
0.1  
2
7
12  
17  
I
[A]  
L
Infineon Technologies AG  
Page 9  
2006-Mar-16  
®
PROFET ITS428L2  
Typ. on-state resistance  
R
ON  
= f (V ,T ); I = 2 A, IN = high  
L
bb j  
RON [m]  
175  
150  
125  
100  
75  
Tj=150°C  
25°C  
50  
-40°C  
25  
0
3
5
7
9
30  
40  
V
bb  
[V]  
Typ. standby current  
I
= f (T ); V = 9...34 V, IN1,2 = low  
bb  
bb(off)  
j
Ibb(off) [µA]  
45  
40  
35  
30  
25  
20  
15  
10  
5
0
-50  
0
50  
100  
150  
200  
T [°C]  
j
Infineon Technologies AG  
Page 10  
2006-Mar-16  
®
PROFET ITS428L2  
Timing diagrams  
Figure 2b: Switching a lamp,  
Figure 1a: V turn on:  
bb  
IN  
IN  
V
bb  
ST  
V
V
OUT  
OUT  
ST open drain  
I
L
t
t
proper turn on under all conditions  
The initial peak current should be limited by the lamp and not by the  
current limit of the device.  
Figure 2a: Switching a resistive load,  
Figure 2c: Switching an inductive load  
turn-on/off time and slew rate definition:  
IN  
IN  
VOUT  
ST  
90%  
t
dV/dtoff  
on  
V
OUT  
t
dV/dton  
off  
10%  
IL  
I
L
I
L(OL)  
t
t
*) if the time constant of load is too large, open-load-status may  
occur  
Infineon Technologies AG  
Page 11  
2006-Mar-16  
®
PROFET ITS428L2  
Figure 3a: Short circuit  
Figure 5a: Open load: detection in ON-state, open  
shut down by overtemperature, reset by cooling  
load occurs in on-state  
IN  
other channel: normal operation  
IN  
t
t
d(ST OL)  
d(ST OL)  
ST  
V
I
L
I
L(lim)  
I
OUT  
L(SCr)  
t
off(SC)  
normal  
normal  
ST  
open  
I
L
t
t
Heating up of the chip may require several milliseconds, depending  
on external conditions  
td(ST OL) = 10 µs typ.  
Figure 4a: Overtemperature:  
Figure 5b: Open load: turn on/off to open load  
Reset if T <T  
j
jt  
IN  
IN  
t
d(STOL4)  
ST  
ST  
I
L
V
OUT  
t
T
J
t
Infineon Technologies AG  
Page 12  
2006-Mar-16  
®
PROFET ITS428L2  
Published by  
Package and Ordering Code  
Infineon Technologies AG,  
St.-Martin-Strasse 53,  
All dimensions in mm  
D-81669 München  
DPAK-5 Pin: PG-TO252-5-11  
© Infineon Technologies AG 2006  
All Rights Reserved.  
Sales code  
ITS428L2  
Ordering code  
SP000221220  
Attention please!  
The information herein is given to describe certain  
components and shall not be considered as a guarantee of  
characteristics.  
+0.15  
6.5  
-0.05  
A
+0.05  
5.7 MAX.1)  
(5)  
2.3  
-0.10  
Terms of delivery and rights to technical change reserved.  
+0.08  
B
0.5  
-0.04  
We hereby disclaim any and all warranties, including but not  
limited to warranties of non-infringement, regarding circuits,  
descriptions and charts stated herein.  
+0.20  
-0.01  
0.9  
0...0.15  
Infineon Technologies is an approved CECC manufacturer.  
Information  
0.15 MAX.  
per side  
+0.08  
±0.1  
5 x 0.6  
1.14  
0.5  
-0.04  
For further information on technology, delivery terms and  
conditions and prices please contact your nearest Infineon  
Technologies Office in Germany or our Infineon  
0.1 B  
4.56  
M
Technologies Representatives worldwide (see address list).  
0.25  
A B  
Warnings  
1) Includes mold flashes on each side.  
All metal surfaces tin plated, except area of cut.  
Due to technical requirements components may contain  
dangerous substances. For information on the types in  
question please contact your nearest Infineon Technologies  
Office.  
Infineon Technologies Components may only be used in life-  
support devices or systems with the express written  
approval of Infineon Technologies, if a failure of such  
components can reasonably be expected to cause the  
failure of that life-support device or system, or to affect the  
safety or effectiveness of that device or system. Life support  
devices or systems are intended to be implanted in the  
human body, or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to  
assume that the health of the user or other persons may be  
endangered.  
Infineon Technologies AG  
Page 13  
2006-Mar-16  

相关型号:

SP000221224

Smart Two Channel Highside Power Switch for Industrial Applications
INFINEON

SP000221225

Smart Sense High-Side Power Switch For Industrial Applications
INFINEON

SP000221227

Smart Highside Power Switch for Industrial Applications
INFINEON

SP000221228

Smart Power High-Side-Switch for Industrial Applications
INFINEON

SP000221229

Smart Power High-Side-Switch for Industrial Applications
INFINEON

SP000221231

Smart High-Side Power Switch for Industrial Applications
INFINEON

SP000221232

Smart High-Side Power Switch for Industrial Applications
INFINEON

SP000221233

Smart Two Channel Highside Power Switch For Industrial Applications
INFINEON

SP000221234

Smart Two Channel Highside Power Switch For Industrial Applications
INFINEON

SP000223256

CoolMOS Power Transistor
INFINEON

SP000240073

Smart High-Side Power Switch for Industrial Applications One channel: 1 x 1 з
INFINEON

SP000245771

Microcontroller,
INFINEON