SP000928942 [INFINEON]
Small Signal Field-Effect Transistor,;
| 型号： | SP000928942 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总9页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS308PE
OptiMOS™ P3 Small-Signal-Transistor
Features
Product Summary
V DS
30
80
V
• P-channel
R DS(on),max
V GS=-10 V
mΩ
• Enhancement mode
• Logic level (4.5V rated)
V GS=-4.5 V
130
-2.0
I D
A
• ESD protected
PG-SOT-23
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
3
1
2
Type
Package
Tape and Reel Information
Marking
Lead Free
Packing
BSS308PE PG-SOT23 H6327: 3000 pcs/ reel
YFs
Yes
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T A=25 °C
T A=70 °C
T A=25 °C
Continuous drain current
-2.0
-1.6
-8.0
A
I D,pulse
Pulsed drain current
E AS
I D=-2 A, R GS=25 Ω
I D=-2 A,
Avalanche energy, single pulse
-10.7
6
mJ
V
DS=-16V,
di /dt =-200A/µs,
j,max=150 °C
Reverse diode dv /dt
dv /dt
kV/µs
T
V GS
Gate source voltage
±20
0.5
V
Power dissipation1)
P tot
T A=25 °C
W
°C
T j, T stg
Operating and storage temperature
ESD Class
-55 ... 150
2 (2kV to 4kV)
260 °C
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
°C
°C
55/150/56
Rev 2.03
page 1
2011-07-08
BSS308PE
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Thermal characteristics
Thermal resistance,
junction - ambient
minimal footprint1)
R thJA
-
-
250 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS= 0V, I D=-250µA
Drain-source breakdown voltage
Gate threshold voltage
-30
-2.0
-
-
-1.5
-
-
V
V GS(th)
V DS=VGS, I D=-11µA
-1.0
-1
V DS=-30V, V GS=0 V,
T j=25 °C
I DSS
Drain-source leakage current
μA
V
DS=-30V, V GS=0V,
-
-
-100
T j=150 °C
I GSS
V GS=-20V, V DS=0V
Gate-source leakage current
-
-
-
-5
μA
V GS=-4.5 V,
I D=-1.7 A
R DS(on)
Drain-source on-state resistance
88
130
mΩ
V
GS=-10 V, I D=-2 A
-
62
80
-
|V DS|>2|I D|R DS(on)max
I D=-1.6 A
,
g fs
Transconductance
4.6
S
1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides
of the PCB.
Rev 2.03
page 2
2011-07-08
BSS308PE
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
376
196
12
500 pF
261
V GS=0 V, V DS=-15 V,
C oss
Crss
t d(on)
t r
f =1 MHz
18
5.6
7.7
15.3
2.8
-
-
-
-
ns
V DD=-15V,
V
GS=-10 V,
t d(off)
t f
Turn-off delay time
Fall time
I D=-2 A, R G=6 Ω
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
-1.2
-0.6
-5.0
-3.1
-
-
-
-
nC
Q gd
V
V
DD=-15 V, I D=-2 A,
GS=0 to -10 V
Q g
V plateau
Gate plateau voltage
V
A
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
-0.4
-8.4
T A=25 °C
I S,pulse
V GS=0 V, I F=-2 A,
T j=25 °C
V SD
Diode forward voltage
-
-0.8
-1.1
V
t rr
Reverse recovery time
-
-
14
-
-
ns
V R=10 V, I F=-2 A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
-5.9
nC
Rev 2.03
page 3
2011-07-08
BSS308PE
1 Power dissipation
2 Drain current
P
tot=f(T A)
I D=f(T A); V GS≥10 V
2.2
2
0.5
0.375
0.25
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.125
0
0
40
80
120
160
0
20
40
60
80
100 120 140 160
T A [°C]
T A [°C]
3 Safe operating area
I D=f(V DS); T A=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJA=f(t p)
parameter: D =t p/T
101
103
1 µs
10 µs
100 µs
100
1 ms
0.5
102
0.2
10 ms
10-1
10-2
10-3
10-4
0.1
0.05
101
0.02
0.01
DC
single pulse
100
10-1
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
101
102
V DS [V]
t p [s]
Rev 2.03
page 4
2011-07-08
BSS308PE
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
400
6
4.5 V
2.8 V
350
10 V
4 V
3 V
5
4
3
2
1
0
3.5 V
300
250
200
150
100
50
3.3 V
3.3 V
3.5 V
4 V
3 V
4.5 V
10 V
2.8 V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V DS [V]
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
4
3
2
1
8
6
4
2
0
25 °C
150 °C
0
0.0 0.5
1.0 1.5
2.0 2.5 3.0
V GS [V]
3.5 4.0
0
1
2
3
4
5
6
I D [A]
Rev 2.03
page 5
2011-07-08
BSS308PE
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=VGS; I D=11 µA
parameter: I D
R
DS(on)=f(T j); I D=-2 A; V GS=-10 V
140
120
100
2.4
2
98 %
1.6
98 %
typ
80
1.2
typ
2 %
60
0.8
0.4
0
40
20
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
)
parameter: T j
103
101
Ciss
150 °C
25 °C
Coss
100
10-1
10-2
102
150 °C, 98%
Crss
25 °C, 98%
101
100
10-3
0
5
10
15
20
0
0.4
0.8
V SD [V]
1.2
1.6
V DS [V]
Rev 2.03
page 6
2011-07-08
BSS308PE
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=-2 A pulsed
V
I
parameter: T j(start)
parameter: V DD
101
10
8
6
4
2
15 V
25 °C
6 V
100
100 °C
24 V
125 °C
10-1
100
0
0
101
102
103
1
2
3
4
5
6
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=250 µA
33
32
31
30
29
28
27
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
T j [°C]
Rev 2.03
page 7
2011-07-08
BSS308PE
SOT-23
Package Outline:
Footprint:
Packaging:
Rev 2.03
page 8
2011-07-08
BSS308PE
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 2.03
page 9
2011-07-08
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