SPA15N60C3 [INFINEON]
Cool MOS⑩ Power Transistor; 酷MOS ™功率晶体管
| 型号： | SPA15N60C3 |
| 厂家： | 
Infineon |
| 描述： | Cool MOS⑩ Power Transistor |
| 文件： | 总13页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
Cool MOS™ Power Transistor
V
@ T
650
0.28
15
V
Ω
A
DS
jmax
Feature
R
DS(on)
• New revolutionary high voltage technology
• Ultra low gate charge
I
D
P-TO220-3-31
P-TO262-3-1
P-TO220-3-1
• Periodic avalanche rated
• Extreme dv/dt rated
3
• Ultra low effective capacitances
• Improved transconductance
2
1
P-TO220-3-31
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
Package
Ordering Code
Marking
SPP15N60C3
SPI15N60C3
SPA15N60C3
P-TO220-3-1 Q67040-S4600
P-TO262-3-1 Q67040-S4601
P-TO220-3-31 Q67040-S4603
15N60C3
15N60C3
15N60C3
Maximum Ratings
Parameter
Symbol
Value
SPP_I
Unit
SPA
Continuous drain current
I
A
D
1)
T = 25 °C
15
9.4
15
C
1)
T = 100 °C
9.4
C
Pulsed drain current, t limited by T
I
D puls
45
45
A
p
jmax
Avalanche energy, single pulse
E
460
460
mJ
AS
I =7.5A, V =50V
D
DD
2)
E
Avalanche energy, repetitive t limited by T
0.8
0.8
AR
AR
jmax
I =15A, V =50V
D
DD
Avalanche current, repetitive t limited by T
Gate source voltage static
I
15
15
±20
±30
34
A
V
AR
jmax
AR
V
V
P
±20
±30
156
GS
GS
tot
Gate source voltage AC (f >1Hz)
Power dissipation, T = 25°C
W
C
Operating and storage temperature
T , T
-55...+150
°C
Page 1
2003-07-01
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
dv/dt
50
V/ns
V
= 480 V, I = 15 A, T = 125 °C
DS
D j
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
R
-
-
-
-
-
-
-
-
-
-
0.8 K/W
3.7
62
80
Thermal resistance, junction - case
thJC
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
Soldering temperature,
R
thJC_FP
R
thJA
R
thJA_FP
260 °C
T
sold
3)
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at T =25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
600
-
typ. max.
V
V
=0V, I =0.25mA
-
-
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS GS
D
V
=0V, I =15A
700
-
V
GS
D
(BR)DS
I =675µA, V =V
2.1
3
3.9
Gate threshold voltage
Zero gate voltage drain current
V
I
D
GS DS
GS(th)
V
=600V, V =0V,
DS GS
µA
DSS
T =25°C
-
-
-
0.1
-
-
1
100
100 nA
j
T =150°C
j
V
V
=30V, V =0V
Gate-source leakage current
I
GS
GS
DS
GSS
=10V, I =9.4A
Drain-source on-state resistance R
Ω
D
DS(on)
T =25°C
-
-
-
0.25
0.68
1.23
0.28
-
j
T =150°C
j
R
f=1MHz, open drain
-
Gate input resistance
G
Page 2
2003-07-01
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
typ. max.
11.9
Unit
S
min.
Transconductance
g
V
≥2*I *R
DS
,
-
-
fs
D
DS(on)max
I =9.4A
D
Input capacitance
C
V
=0V, V =25V,
GS DS
-
-
-
-
1660
540
40
-
-
-
-
pF
iss
f=1MHz
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
4)
V
V
=0V,
GS
80
Effective output capacitance,
energy related
C
o(er)
=0V to 480V
DS
5)
-
127
-
Effective output capacitance,
time related
C
o(tr)
Turn-on delay time
t
V
=480V, V =0/10V,
-
-
-
-
10
5
50
5
-
-
80
10
ns
d(on)
DD
GS
I =15A,
Rise time
t
D
r
R =4.3Ω
Turn-off delay time
Fall time
t
G
d(off)
t
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
Q
Q
V
=480V, I =15A
-
-
-
7
29
63
-
-
-
nC
V
gs
gd
g
DD
D
V
V
=480V, I =15A,
Gate charge total
DD
D
=0 to 10V
GS
V
=480V, I =15A
-
5
-
Gate plateau voltage
V(plateau)
DD
D
1
2
Limited only by maximum temperature
Repetitve avalanche causes additional power losses that can be calculated as P =E *f.
AR
AV
3
4
Soldering temperature for TO-263: 220°C, reflow
C
is a fixed capacitance that gives the same stored energy as C
while V is rising from 0 to 80% V
.
oss
DS
o(er)
o(tr)
DSS
5
C
is a fixed capacitance that gives the same charging time as C
while V is rising from 0 to 80% V
.
oss
DS
DSS
Page 3
2003-07-01
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ. max.
T =25°C
-
-
15
A
Inverse diode continuous
forward current
I
C
S
Inverse diode direct current,
I
-
-
45
SM
pulsed
V
=0V, I =I
F S
-
-
-
-
-
1
460
27
55
1300
1.2
V
Inverse diode forward voltage
Reverse recovery time
V
GS
SD
t
V =480V, I =I ,
-
-
-
-
ns
µC
A
rr
R
F
S
di /dt=100A/µs
Reverse recovery charge
Peak reverse recovery current
Q
I
F
rr
rrm
T =25°C
A/µs
Peak rate of fall of reverse
recovery current
di /dt
j
rr
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
SPP_B
0.0002495 0.0002495 Ws/K
0.0009406 0.0009406
Unit
SPP_B
0.012
0.023
0.043
0.156
0.178
0.072
SPA
0.012
0.023
0.043
0.176
0.371
2.522
SPA
R
R
R
R
K/W
C
th1
th2
th3
th4
th1
C
th2
C
0.001298
0.00362
0.009046
0.412
0.001298
0.00362
0.008025
0.412
th3
C
th4
Rth5
C
th5
C
th6
R
th6
External Heatsink
Tj
Rth1
Rth,n
Tcase
Ptot (t)
Cth1
Cth2
Cth,n
Tamb
Page 4
2003-07-01
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
1 Power dissipation
= f (T )
2 Power dissipation FullPAK
= f (T )
P
P
tot
tot
C
C
SPP15N60C3
35
170
W
W
140
120
100
80
25
20
15
10
5
60
40
20
0
0
0
20
40
60
80 100 120
160
0
20
40
60
80 100 120
160
°C
T
°C
T
j
C
3 Safe operating area
I = f ( V
4 Safe operating area FullPAK
I = f (V )
)
D
DS
D
DS
parameter : D = 0 , T =25°C
parameter: D = 0, T = 25°C
C
C
10 2
10 2
A
A
10 1
10 1
10 0
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
DC
10 -1
10 -1
tp = 1 ms
tp = 10 ms
DC
10 -2
10 -2
10 0
10 1
10 2
10 3
10 0
10 1
10 2
10 3
DS
V
V
V
V
DS
Page 5
2003-07-01
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
5 Transient thermal impedance
= f (t )
6 Transient thermal impedance FullPAK
Z = f (t )
thJC
Z
thJC
p
p
parameter: D = t /T
parameter: D = t /t
p
p
10 1
10 1
K/W
K/W
10 0
10 -1
10 -2
10 -3
10 -4
10 0
10 -1
10 -2
10 -3
10 -4
D = 0.5
D = 0.5
D = 0.2
D = 0.2
D = 0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -7
10 -6
10 -5
10 -4
10 -3
10 -1
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
10 1
s
s
p
t
t
p
7 Typ. output characteristic
I = f (V ); T =25°C
8 Typ. output characteristic
I = f (V ); T =150°C
D
DS
j
D
DS
j
parameter: t = 10 µs, V
parameter: t = 10 µs, V
p
GS
p
GS
60
30
Vgs = 20V
Vgs = 20V
Vgs = 7V
Vgs = 7V
Vgs = 6.5V
A
Vgs = 6V
A
Vgs = 6V
Vgs = 5.5V
Vgs = 5V
Vgs = 5.5V
Vgs = 5V
Vgs = 4.5V
Vgs = 4.5V
Vgs = 4V
40
20
Vgs = 4V
30
20
10
0
15
10
5
0
0
4
8
12
16
20
28
DS
0
4
8
12
16
20
28
DS
V
V
V
V
Page 6
2003-07-01
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
9 Typ. drain-source on resistance
=f(I )
10 Drain-source on-state resistance
R = f (T )
DS(on)
R
DS(on)
D
j
parameter: T =150°C, V
parameter : I = 9.4 A, V = 10 V
j
GS
D
GS
SPP15N60C3
1.8
1.6
Vgs = 4V
Vgs = 4.5V
Vgs = 5V
Vgs = 5.5V
Vgs = 6V
Vgs = 7V
Vgs = 20V
Ω
Ω
1.2
1
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
98%
typ
°C
0
5
10
15
20
30
-60
-20
20
60
100
180
A
I
T
D
j
11 Typ. transfer characteristics
12 Typ. gate charge
= f (Q
I = f ( V ); V ≥ 2 x I x R
V
)
Gate
D
GS
DS
D
DS(on)max
GS
parameter: t = 10 µs
parameter: I = 15 A pulsed
p
D
SPP15N60C3
60
16
V
A
25°C
12
40
30
20
10
0
0,2 VDS max
10
0,8 VDS max
150°C
8
6
4
2
0
0
2
4
6
10
GS
0
10 20 30 40 50 60 70 80
100
Gate
V
nC
V
Q
Page 7
2003-07-01
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
13 Forward characteristics of body diode
I = f (V )
14 Avalanche SOA
= f (t )
I
F
SD
AR
AR
parameter: T , tp = 10 µs
par.: T ≤ 150 °C
j
10 2
SPP15N60C3
15
A
A
10 1
9
6
T
=25°C
j(START)
10 0
T
=125°C
j(START)
Tj = 25 °C typ
Tj = 150 °C typ
3
0
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -1
0
0.4
0.8
1.2
1.6
2
2.4
3
10 -3 10 -2 10 -1 10 0 10 1 10 2
10 4
V
µs
AR
t
V
SD
15 Avalanche energy
= f (T )
16 Drain-source breakdown voltage
E
V
= f (T )
AS
j
(BR)DSS
j
par.: I = 7.5 A, V = 50 V
D
DD
SPP15N60C3
0.5
720
V
mJ
680
660
640
620
600
580
560
540
0.3
0.2
0.1
0
20
40
60
80
100
120
160
-60
-20
20
60
100
180
°C
°C
T
T
j
j
Page 8
2003-07-01
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
17 Avalanche power losses
= f (f )
18 Typ. capacitances
P
C = f (V )
AR
DS
parameter: E =0.8mJ
parameter: V =0V, f=1 MHz
AR
GS
10 4
900
pF
W
C
iss
700
600
500
400
300
200
100
10 3
10 2
10 1
10 0
C
oss
C
rss
0
10 4
10 5
10 6
0
100
200
300
400
600
DS
Hz
V
V
f
19 Typ. C
stored energy
oss
E
=f(V )
oss
DS
15
µJ
9
6
3
0
0
100
200
300
400
600
DS
V
V
Page 9
2003-07-01
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
Definition of diodes switching characteristics
Page 10
2003-07-01
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
P-TO-220-3-1
B
±0.4
±0.2
4.44
10
A
3.7
±0.13
1.27
0.05
C
±0.1
0.5
3x
0.75
±0.1
±0.2
2.51
±0.22
1.17
2x 2.54
M
0.25
A B C
All metal surfaces tin plated, except area of cut.
Metal surface min. x=7.25, y=12.3
Page 11
2003-07-01
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
2
P-TO-262-3-1 (I -PAK)
±0.2
10
A
B
0...0.3
4.4
8.51)
1.27
0.05
2.4
C
±0.1
0.5
0...0.15
2.4
1.05
±0.1
3 x 0.75
2 x 2.54
M
0.25
A B C
1)
Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.
P-TO-220-3-31 (FullPAK)
Please refer to mounting instructions (application note AN-TO220-3-31-01)
Page 12
2003-07-01
SPP15N60C3, SPI15N60C3
SPA15N60C3
Final data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 13
2003-07-01
相关型号：
SPA15N60C3XKSA1
Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPAK-3
INFINEON
SPA15N65C3XKSA1
Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
INFINEON
SPA16N50C3XKSA1
Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明