SPD07N60C2 [INFINEON]
Cool MOS⑩ Power Transistor; 酷MOS ™功率晶体管
| 型号： | SPD07N60C2 |
| 厂家： | 
Infineon |
| 描述： | Cool MOS⑩ Power Transistor |
| 文件： | 总11页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD07N60C2
SPU07N60C2
Final data
Cool MOS™ Power Transistor
Feature
Product Summary
• New revolutionary high voltage technology
• Worldwide best R in TO-251 and TO-252
V
V
600
0.6
7.3
DS
DS(on)
R
Ω
DS(on)
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
A
I
D
P-TO251
P-TO252
• Ultra low effective capacitances
• Improved noise immunity
Type
Package
P-TO252
P-TO251
Ordering Code
Q67040-S4312
Q67040-S4311
Marking
07N60C2
07N60C2
SPD07N60C2
SPU07N60C2
Maximum Ratings, at T = 25°C, unless otherwise specified
C
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T = 25 °C
7.3
4.6
C
T = 100 °C
C
14.6
230
Pulsed drain current, t limited by T
I
D puls
p
jmax
mJ
Avalanche energy, single pulse
E
AS
I =5.5A, V =50V
D
DD
1)
0.5
Avalanche energy, repetitive t limited by T
E
AR
jmax
AR
I =7.3A, V =50V
D
DD
7.3
6
A
Avalanche current, repetitive t limited by T
I
AR
AR
jmax
Reverse diode dv/dt
dv/dt
V/ns
I =7.3A, V
DS
< V , di/dt=100A/µs, T =150°C
DD jmax
S
V
Gate source voltage
Power dissipation, T = 25°C
V
P
±20
83
GS
tot
W
°C
C
Operating and storage temperature
T , T
-55... +150
j
stg
Page 1
2002-10-07
SPD07N60C2
SPU07N60C2
Final data
Thermal Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
-
-
-
-
1.5 K/W
75
Thermal resistance, junction - case
R
thJC
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
R
thJA
R
thJA
-
-
-
-
-
-
-
-
75
50
2
2)
@ 6 cm cooling area
0.66
260 °C
Linear derating factor
W/K
Soldering temperature,
T
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Static Characteristics
Drain-source breakdown voltage
V
V
V
600
-
-
-
-
V
(BR)DSS
(BR)DS
GS(th)
V
=0V, I =0.25mA
D
GS
700
4.5
Drain-source avalanche breakdown voltage
V
=0V, I =7.3A
D
GS
3.5
5.5
Gate threshold voltage, V = V
GS
DS
I =350µA
D
µA
Zero gate voltage drain current
I
DSS
V
= 600 V, V
= 0 V, T = 25 °C
-
-
-
0.1
1
DS
GS
GS
j
V
= 600 V, V
= 0 V, T = 150 °C
-
-
100
DS
j
100 nA
Gate-source leakage current
I
GSS
V
=20V, V =0V
DS
GS
-
-
0.54
0.8
0.6
-
Drain-source on-state resistance
R
Ω
DS(on)
V
=10V, I =4.6A, T =25°C
D j
GS
Gate input resistance
R
G
f = 1 MHz, open drain
1
Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2002-10-07
SPD07N60C2
SPU07N60C2
Final data
Electrical Characteristics , at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
Characteristics
V
≥2*I *R
,
-
4
-
S
Transconductance
g
DS
D
DS(on)max
fs
I =4.6A
D
V
=0V, V =25V,
GS DS
-
-
-
-
970
370
10
-
-
-
-
pF
Input capacitance
Output capacitance
C
iss
f=1MHz
C
oss
rss
Reverse transfer capacitance C
1)
V
V
=0V,
GS
Effective output capacitance,
energy related
C
C
t
30
pF
ns
o(er)
=0V to 480V
DS
2)
Effective output capacitance,
time related
-
55
-
o(tr)
V
=380V, V =0/13V,
-
-
-
-
11
33
47
9
-
-
Turn-on delay time
Rise time
DD
GS
d(on)
I =7.3A, R =12Ω,
t
t
t
D
G
r
T =125°C
70
13.5
Turn-off delay time
Fall time
j
d(off)
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
V
=350V, I =7.3A
-
-
-
7.5
16.5
27
-
-
nC
V
Q
Q
Q
DD
D
gs
gd
g
V
=350V, I =7.3A,
35
Gate charge total
DD
D
V
=0 to 10V
GS
V
=350V, I =7.3A
-
8
-
Gate plateau voltage
V(plateau)
DD
D
1
Co(er) is a fixed capacitance that gives the same stored energy asCoss while VDS is rising from 0 to 80% VDSS
.
2
Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Page 3
2002-10-07
SPD07N60C2
SPU07N60C2
Final data
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
Characteristics
T =25°C
-
-
-
-
7.3
14.6
1.2
A
Inverse diode continuous
forward current
I
C
S
Inverse diode direct current,
pulsed
I
SM
V
=0V, I =I
GS
-
-
-
-
-
1
V
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
V
t
F
S
SD
V =350V, I =I ,
750
4.9
18
1275 ns
R
F S
rr
di /dt=100A/µs
-
-
-
µC
A
Q
F
rr
I
rrm
550
A/µs
di /dt
rr
Typical Transient Thermal Characteristics
Symbol
Value
typ.
Unit
Symbol
Value
typ.
Unit
Thermal resistance
Thermal capacitance
0.024
0.052
0.065
0.172
0.177
0.064
K/W
0.0001354
0.0004561
0.0007717
0.001013
0.00738
R
C
Ws/K
th1
th1
R
C
th2
th2
R
C
th3
th3
R
C
th4
th4
Rth5
C
th5
R
C
0.04
th6
th6
External Heatsink
Tj
Rth1
Rth,n
Tcase
Ptot (t)
Cth1
Cth2
Cth,n
Tamb
Page 4
2002-10-07
SPD07N60C2
SPU07N60C2
Final data
1 Power dissipation
= f (T )
2 Safe operating area
I = f ( V
P
)
DS
tot
C
D
parameter : D = 0 , T =25°C
C
10 2
SPD07N60C2
100
W
A
80
70
60
50
40
30
20
10
0
10 1
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
10 -1
DC
10 -2
0
20
40
60
80 100 120
160
10 0
10 1
10 2
10 3
°C
V
T
V
DS
C
3 Transient thermal impedance
= f (t )
4 Typ. output characteristic
I = f (V ); T =25°C
Z
thJC
p
D
DS
j
parameter: D = t /T
parameter: t = 10 µs, V
p
p
GS
10 1
25
K/W
20V
A
10 0
10 -1
10 -2
10 -3
12V
15
10
5
10V
9V
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
8V
7V
single pulse
0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -1
0
5
10
15
25
s
V
t
V
DS
p
Page 5
2002-10-07
SPD07N60C2
SPU07N60C2
Final data
5 Typ. output characteristic
I = f (V ); T =150°C
6 Typ. drain-source on resistance
=f(I )
R
D
DS
j
DS(on)
D
parameter: t = 10 µs, V
parameter: T =150°C, V
p
GS
j
GS
3
12
20V
12V
10V
A
9V
Ω
8.5V
8V
8
6
4
2
0
2
1.5
1
20V
12V
10V
9V
8.5V
8V
7.5V
7V
6.5V
6V
7.5V
7V
6.5V
6V
0
5
10
15
25
0
2
4
6
8
10
14
V
V
I
D
DS
7 Drain-source on-state resistance
= f (T )
8 Typ. transfer characteristics
R
I = f ( V ); V ≥ 2 x I x R
D GS DS D DS(on)max
DS(on)
j
parameter : I = 4.6 A, V = 10 V
parameter: t = 10 µs
D
GS
p
SPD07N60C2
3.4
24
A
Ω
20
18
2.8
2.4
2
16
25 °C
150 °C
14
12
10
8
1.6
1.2
0.8
0.4
0
6
98%
typ
4
2
0
°C
-60
-20
20
60
100
180
0
4
8
12
20
V
V
T
GS
j
Page 6
2002-10-07
SPD07N60C2
SPU07N60C2
Final data
9 Forward characteristics of body diode
I = f (V )
10 Typ. switching time
t = f (R ), inductive load, T =125°C
F
SD
G
j
parameter: T , tp = 10 µs
par.: V =380V, V =0/+13V, I =7.3 A
DS GS D
j
10 2
10 3
SPD07N60C2
ns
A
td(off)
td(on)
10 1
10 2
tr
tf
10 0
10 1
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -1
10 0
0
0.4
0.8
1.2
1.6
2
2.4
3
0
20
40
60
80
100
140
V
Ω
R
V
G
SD
1)
1)
11 Typ. switching losses
E = f (I ), inductive load, T =125°C
12 Typ. switching losses
E = f(R ), inductive load, T =125°C
D
j
G
j
par.: V =380V, V =0/+13V, R =12Ω
par.: V =380V, V =0/+13V,I =7.3A
DS GS D
DS
GS
G
0.4
0.3
*) Eon includes SDP06S60 diode
*) Eon includes SDP06S60 diode
commutation losses.
commutation losses.
mWs
1This chart helps to estimate
the switching power losses.
The values can be different
under other operating conditions.
1This chart helps to estimate
the switching power losses.
The values can be different
under other operating conditions.
mWs
0.3
0.25
0.2
0.2
0.15
0.1
Eon
*
Eon
*
Eoff
0.15
0.1
Eoff
0.05
0
0.05
0
0
2
4
6
8
10
12
16
0
20
40
60
80
120
A
Ω
I
R
G
D
Page 7
2002-10-07
SPD07N60C2
SPU07N60C2
Final data
13 Avalanche SOA
= f (t )
14 Avalanche energy
E = f (T )
AS
I
AR
AR
j
par.: T ≤ 150 °C
par.: I = 5.5 A, V = 50 V
j
D
DD
260
8
mJ
A
220
200
180
160
140
120
100
80
6
5
4
3
2
1
0
Tj(START)=25°C
Tj(START)=125°C
60
40
20
0
10 -3 10 -2 10 -1 10 0 10 1 10 2
10 4
20
40
60
80
100
120
160
°C
µs
t
T
AR
j
15 Drain-source breakdown voltage
= f (T )
16 Avalanche power losses
P = f (f )
AR
V
(BR)DSS
j
parameter: E =0.5mJ
AR
SPD07N60C2
300
720
V
W
680
660
640
620
600
580
560
540
200
150
100
50
0
10 4
-60
-20
20
60
100
180
10 5
10 6
°C
Hz
T
f
j
Page 8
2002-10-07
SPD07N60C2
SPU07N60C2
Final data
18 Typ. C
17 Typ. capacitances
C = f (V )
stored energy
oss
E
=f(V )
DS
DS
oss
parameter: V =0V, f=1 MHz
GS
10 4
5.5
µJ
pF
Ciss
4.5
4
10 3
3.5
3
10 2
2.5
2
Coss
10 1
1.5
1
Crss
0.5
10 0
0
0
100
200
300
400
600
DS
0
100
200
300
400
600
DS
V
V
V
V
Definition of diodes switching characteristics
Page 9
2002-10-07
SPD07N60C2
SPU07N60C2
Final data
P-TO-252-3-1 (D-PAK)
+0.15
6.5
-0.10
+0.05
-0.10
2.3
A
+0.08
-0.04
B
±0.1
5.4
0.9
0...0.15
0.15 max
per side
3x
+0.08
0.5
±0.1
0.75
-0.04
2.28
±0.1
1
4.57
M
0.25
A B
0.1
GPT09051
All metal surfaces tin plated, except area of cut.
P-TO-251-3-1 (I-PAK)
+0.15
6.5
-0.10
+0.05
2.3
-0.10
A
+0.08
B
±0.1
5.4
0.9
-0.04
C
0.15 max
per side
+0.08
±0.1
0.5
-0.04
3 x 0.75
2.28
1.0
4.56
M
0.25
A B C
GPT09050
All metal surfaces tin plated, except area of cut.
Page 10
2002-10-07
SPD07N60C2
SPU07N60C2
Final data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 11
2002-10-07
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