SPD08N05L [INFINEON]
SIPMOS-R POWER TRANSISTOR; SIPMOS -R功率晶体管
| 型号： | SPD08N05L |
| 厂家： | 
Infineon |
| 描述： | SIPMOS-R POWER TRANSISTOR |
| 文件： | 总8页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD 08N05L
SIPMOS PowerTransistor
Product Summary
Features
Drain source voltage
55
0.1
8.4
V
V
DS
• N channel
Drain-Source on-state resistance
Continuous drain current
R
Ω
• Enhancement mode
DS(on)
A
I
D
• Avalanche rated
• Logic Level
• d
v/dt rated
• 175˚C operating temperature
Pin 1 Pin 2 Pin 3
Type
Package
P-TO252
P-TO251
Ordering Code
Packaging
G
D
S
SPD08N05L
SPU08N05L
Q67040-S4134
Tape and Reel
Q67040-S4182-A2 Tube
MaximumRatings , at
T
= 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
Continuous drain current
A
I
D
T
= 25 ˚C
8.4
5.9
C
T
= 100 ˚C
C
Pulsed drain current
= 25 ˚C
34
IDpulse
T
C
Avalanche energy, single pulse
= 8.4 A, = 25 V, = 25 Ω
35
mJ
E
E
AS
I
V
R
GS
D
DD
2.4
6
Avalanche energy, periodic limited by
Reverse diode d /d
= 8.4 A, = 40 V, di/dt = 200 A/µs,
T
jmax
AR
kV/µs
v
t
d
v
/d
t
I
V
S
DS
T
= 175 ˚C
jmax
Gate source voltage
Power dissipation
±20
V
V
P
GS
24
W
tot
T
= 25 ˚C
C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55... +175
55/175/56
˚C
T , T
j stg
Data Sheet
1
06.99
SPD 08N05L
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leded
SMD version, device on PCB:
@ min. footprint
-
-
6.25 K/W
100
R
R
R
thJC
thJA
thJA
-
-
-
-
-
75
50
2
1)
@ 6 cm cooling area
Electrical Characteristics, at T = 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
55
typ. max.
Static Characteristics
Drain- source breakdown voltage
-
-
V
V
V
(BR)DSS
GS(th)
V
= 0 V, I = 0.25 mA
D
GS
1.2
1.6
2
Gate threshold voltage, V = V
GS
DS
I = 10 µA
D
Zero gate voltage drain current
µA
I
DSS
V
V
= 50 V, V = 0 V, T = 25 ˚C
-
-
0.1
-
1
DS
DS
GS
j
= 50 V, V = 0 V, T = 150 ˚C
100
GS
j
Gate-source leakage current
= 20 V, V = 0 V
-
10
100 nA
I
GSS
V
GS
DS
Drain-Source on-state resistance
R
Ω
DS(on)
V
V
= 4.5 V, I = 5.9 A
-
-
0.125 0.15
0.08 0.1
GS
GS
D
= 10 V, I = 5.9 A
D
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet
2
06.99
SPD 08N05L
Electrical Characteristics, at T = 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Values
typ. max.
Unit
min.
Dynamic Characteristics
Transconductance
3
-
6.2
250
80
-
S
g
fs
V
≥2*I *R
, I = 5.9 A
DS(on)max D
DS
D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
315 pF
100
C
C
C
iss
V
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
-
oss
rss
V
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
-
45
56
V
GS
DS
Turn-on delay time
= 30 V, V = 4.5 V, I = 8.4 A,
-
20
30
60
40
30
ns
t
d(on)
V
DD
GS
D
R = 25 Ω
G
Rise time
-
-
-
40
25
20
t
r
V
= 30 V, V = 4.5 V, I = 8.4 A,
GS D
DD
R = 25 Ω
G
Turn-off delay time
= 30 V, V = 4.5 V, I = 8.4 A,
t
d(off)
V
DD
GS
D
R = 25 Ω
G
Fall time
t
f
V
= 30 V, V = 4.5 V, I = 8.4 A,
GS D
DD
R = 25 Ω
G
Data Sheet
3
06.99
SPD 08N05L
Electrical Characteristics, at T = 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Values
typ. max.
Unit
min.
Dynamic Characteristics
Gate to source charge
-
-
-
-
1
3.5
9
1.5 nC
Q
Q
gs
V
= 40 V, I = 8.4 A
D
DD
Gate to drain charge
= 40 V, I = 8.4 A
5.4
14
-
gd
V
DD
D
Gate charge total
= 40 V, I = 8.4 A, V = 0 to 10 V
Q
g
V
DD
D
GS
Gate plateau voltage
= 40 V, I = 8.4 A
4
V
V
(plateau)
V
DD
D
Reverse Diode
Inverse diode continuous forward current
-
-
-
-
-
-
-
8.4
34
A
I
S
T = 25 ˚C
C
Inverse diode direct current,pulsed
I
SM
T = 25 ˚C
C
Inverse diode forward voltage
1.05
50
1.8
75
V
V
SD
V
= 0 V, I = 16.8 A
F
GS
Reverse recovery time
V = 30 V, I =I , di /dt = 100 A/µs
ns
t
rr
R
F
S
F
Reverse recovery charge
0.085 0.13 µC
Q
rr
V = 30 V, I =l , di /dt = 100 A/µs
R
F S
F
Data Sheet
4
06.99
SPD 08N05L
Power Dissipation
Drain current
I = f (T )
P
= f (T )
C
tot
D
C
parameter: V ≥ 10 V
GS
SPD08N05L
SPD08N05L
10
26
W
A
22
20
18
16
14
12
10
8
8
7
6
P
I
5
4
3
2
1
0
6
4
2
0
˚C
˚C
190
0
20 40 60 80 100 120 140 160
190
0
20 40 60 80 100 120 140 160
T
T
C
C
Safe operating area
I = f (V )
Transient thermal impedance
Z
= f (t )
p
D
DS
thJC
parameter : D = 0 , T = 25 ˚C
parameter : D = t /T
C
p
SPD08N05L
SPD08N05L
10 1
10 2
K/W
t
= 2.7µs
p
A
10 0
10 µs
10 1
I
V
I
Z
100 µs
10 -1
R
D = 0.50
0.20
10 0
0.10
1 ms
0.05
10 -2
single pulse
10 ms
0.02
DC
V
0.01
10 -1
10 -3
10 -1
10 0
10 1
10 2
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
V
t
p
DS
Data Sheet
5
06.99
SPD 08N05L
Typ. output characteristics
I = f (V )
Typ. drain-source-on-resistance
= f (I )
D
DS
R
DS(on)
D
parameter: t = 80 µs
p
parameter: V
GS
SPD08N05L
20
SPD08N05L
Ptot = 24W
0.50
A
l
k
j
Ω
b
c
d
e
f
i
g
h
V
[V]
GS
a
16
14
12
10
8
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
8.0
10.0
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
b
c
d
e
f
f
I
R
e
g
h
i
d
b
j
k
l
6
c
a
g
4
h
j
l
i
k
2
V
[V] =
c
GS
b
d
e
f
g
h
i
j
k
l
3.0 3.5 4.0 4.5 5.0
5.5 6.0 6.5 7.0
8.0 10.0
0
V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
5.0
A
0
2
4
6
8
10
12
16
V
DS
I
D
Typ. forward transconductance
Typ. transfer characteristics I = f (V
)
D
GS
g = f(I ); T = 25˚C
parameter: t = 80 µs
fs
D
j
p
parameter: g
V
≥ 2 x I x R
fs
DS
D
DS(on)max
25
8
A
S
15
10
5
I
g
4
2
0
0
V
A
0
1
2
3
4
5
6
8
0
2
4
6
8
10
14
V
GS
I
D
Data Sheet
6
06.99
SPD 08N05L
Gate threshold voltage
= f (T )
Drain-source on-resistance
= f (T )
V
GS(th)
j
R
DS(on)
j
parameter : V = V , I = 10 µA
GS
DS D
parameter : I = 5.9 A, V = 4.5 V
D
GS
SPD08N05L
3.0
V
0.55
Ω
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
V
R
98%
typ
max
typ
min
˚C
-60
-20
20
60
100
140
200
˚C
-60
-20
20
60
100
140
200
T
j
T
j
Typ. capacitances
C = f (V
Forward characteristics of reverse diode
)
I = f (V )
DS
F
SD
parameter: V = 0 V, f = 1 MHz
parameter: T , t = 80 µs
GS
j
p
SPD08N05L
10 3
10 2
A
pF
C
10 1
10 0
10 -1
iss
I
10 2
C
C
oss
rss
Tj = 25 ˚C typ
Tj = 175 ˚C typ
Tj = 25 ˚C (98%)
Tj = 175 ˚C (98%)
10 1
V
0
5
10
15
20
25
30
40
V
0.0
0.4
0.8
1.2
1.6
2.0
2.4
3.0
V
DS
V
SD
Data Sheet
7
06.99
SPD 08N05L
Typ. gate charge
Avalanche Energy E = f (T )
AS
j
V
= f (Q
)
parameter: I = 8.4 A, V = 25 V
GS
Gate
D
DD
parameter: I
= 8.4 A
R
= 25 Ω
D puls
GS
SPD08N05L
40
16
V
mJ
30
25
20
15
10
5
12
10
8
E
V
V
V
DS max
0,2
0,8
DS max
6
4
2
0
0
˚C
20
40
60
80 100 120 140
180
0
2
4
6
8
10
14
nC
T
Q
Gate
j
Drain-source breakdown voltage
V
= f (T )
(BR)DSS
j
SPD08N05L
66
V
64
62
60
58
56
54
52
50
V
˚C
-60
-20
20
60
100
140
200
T
j
Data Sheet
8
06.99
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